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    DIODE BY205 Search Results

    DIODE BY205 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE BY205 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    TIP162

    Abstract: diode by205 by205 diode BY205-600 IRF140 TIP160 TIP161
    Text: TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE sat of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO SOT-93 PACKAGE (TOP VIEW)


    Original     		PDF TIP160, TIP161, TIP162 OT-93 TIP161 TIP160 TIP162 diode by205 by205 diode BY205-600 IRF140 TIP160 TIP161

    Untitled

    Abstract: No abstract text available
    Text: TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE sat of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO SOT-93 PACKAGE (TOP VIEW)


    Original     		PDF TIP160, TIP161, TIP162 OT-93 TIP160 TIP161 curr30

    TIP162

    Abstract: diode by205 tip160 US Global Sat tip162 to-3p
    Text: TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE sat of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO SOT-93 PACKAGE (TOP VIEW)


    Original     		PDF TIP160, TIP161, TIP162 global/pdfs/TSP1203 OT-93 TIP160 TIP161 diode by205 US Global Sat tip162 to-3p

    BY205-600

    Abstract: TIP162 by205 diode BY205/600 diode by205 TIP160 by205 IRF140 TIP161 TIP161 transistor
    Text: TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE sat of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO SOT-93 PACKAGE (TOP VIEW)


    Original     		PDF TIP160, TIP161, TIP162 OT-93 TIP161 TIP160 BY205-600 TIP162 by205 diode BY205/600 diode by205 TIP160 by205 IRF140 TIP161 TIP161 transistor

    diode by205

    Abstract: TIP162 by205 by205 diode BY205/600 BY205-600 IRF140 TIP160 TIP161
    Text: TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE sat of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO


    Original     		PDF TIP160, TIP161, TIP162 OT-93 TIP160 TIP161 TIP16ot diode by205 TIP162 by205 by205 diode BY205/600 BY205-600 IRF140 TIP160 TIP161

    Untitled

    Abstract: No abstract text available
    Text: TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS ● 80 W at 25°C Case Temperature ● 7 A Continuous Collector Current ● 10 A Peak Collector Current ● Maximum VCE sat of 2 V at I C = 5 A B 1 ● ICEX(sus) 7 A at rated V(BR)CEO C 2 E 3 TO-220 PACKAGE


    Original     		PDF TIP150, TIP151, TIP152 O-220 TIP151 TIP150

    tip150

    Abstract: No abstract text available
    Text: TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS ● 80 W at 25°C Case Temperature ● 7 A Continuous Collector Current ● 10 A Peak Collector Current ● Maximum VCE sat of 2 V at I C = 5 A B 1 ● ICEX(sus) 7 A at rated V(BR)CEO C 2 E 3 TO-220 PACKAGE


    Original     		PDF TIP150, TIP151, TIP152 O-220 TIP151 TIP150 tip150

    TIP152

    Abstract: by205 diode tip150 BY205-600 IRF140 TIP151 diode by205
    Text: TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS ● 80 W at 25°C Case Temperature ● 7 A Continuous Collector Current ● 10 A Peak Collector Current ● Maximum VCE sat of 2 V at I C = 5 A B 1 ● ICEX(sus) 7 A at rated V(BR)CEO C 2 E 3 TO-220 PACKAGE


    Original     		PDF TIP150, TIP151, TIP152 O-220 TIP151 TIP150 TIP152 by205 diode tip150 BY205-600 IRF140 TIP151 diode by205

    by205 diode

    Abstract: diode by205 400 diode by205
    Text: TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS ● Rugged Epitaxial Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● txo typically 320 ns, IC = 10 A This series is currently available, but


    Original     		PDF TIPL790, TIPL790A O-220 TIPL790 by205 diode diode by205 400 diode by205

    diode by205

    Abstract: by205 diode diode by205 400 by205 BY205-400 TRANSISTOR D 1978 TIPL790 TRANSISTOR 2n2904 2N2222 2N2904
    Text: TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS ● Rugged Epitaxial Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● txo typically 320 ns, IC = 10 A TO-220 PACKAGE TOP VIEW B 1 C 2 E


    Original     		PDF TIPL790, TIPL790A O-220 TIPL790 diode by205 by205 diode diode by205 400 by205 BY205-400 TRANSISTOR D 1978 TIPL790 TRANSISTOR 2n2904 2N2222 2N2904

    diode by205

    Abstract: by205 diode TIP150 TIP152 BY205-600 BY205/600 IRF140 TIP151 TIP150 TO220 diode by205 400
    Text: TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS ● 80 W at 25°C Case Temperature ● 7 A Continuous Collector Current ● 10 A Peak Collector Current ● Maximum VCE sat of 2 V at I C = 5 A B 1 ● ICEX(sus) 7 A at rated V(BR)CEO C 2 E 3 TO-220 PACKAGE


    Original     		PDF TIP150, TIP151, TIP152 O-220 TIP151 TIP150 diode by205 by205 diode TIP150 TIP152 BY205-600 BY205/600 IRF140 TIP151 TIP150 TO220 diode by205 400

    by205 diode

    Abstract: diode by205
    Text: TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS ● Rugged Epitaxial Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● txo typically 320 ns, IC = 10 A This series is obsolete and not recommended for new designs.


    Original     		PDF TIPL790, TIPL790A O-220 TIPL790 by205 diode diode by205

    by205 diode

    Abstract: diode by205 diode by205 400 TIPL790A 2N2222 2N2904 BY205-400 D44H11 D45H11 TIPL790
    Text: TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 ● Rugged Epitaxial Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed


    Original     		PDF TIPL790, TIPL790A O-220 TIPL790 by205 diode diode by205 diode by205 400 TIPL790A 2N2222 2N2904 BY205-400 D44H11 D45H11 TIPL790

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


    OCR Scan     		PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


    OCR Scan     		PDF thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p