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    DIODE BYX 65 400 Search Results

    DIODE BYX 65 400 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE BYX 65 400 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BYX82

    Abstract: BYX83 BYX84 BYX85 BYX86 BYX 98
    Text: BYX82.BYX86 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Applications 94 9539 Rectifier, general purpose Absolute Maximum Ratings Tj = 25_C


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    BYX82. BYX86 BYX82 BYX83 BYX84 BYX85 D-74025 24-Jun-98 BYX82 BYX83 BYX84 BYX85 BYX86 BYX 98 PDF

    Untitled

    Abstract: No abstract text available
    Text: BYX82, BYX83, BYX84, BYX85, BYX86 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Material categorization:


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    BYX82, BYX83, BYX84, BYX85, BYX86 OD-57 MIL-STD-750, 2011/65/EU 2002/95/EC. 2002/95/EC PDF

    Untitled

    Abstract: No abstract text available
    Text: BYX82, BYX83, BYX84, BYX85, BYX86 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Material categorization:


    Original
    BYX82, BYX83, BYX84, BYX85, BYX86 OD-57 MIL-STD-750, 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Untitled

    Abstract: No abstract text available
    Text: BYX82.BYX86 Vishay Semiconductors Silicon Mesa Rectifiers Features D D D D Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Applications 94 9539 Rectifier, general purpose Absolute Maximum Ratings Tj = 25_C


    Original
    BYX82. BYX86 BYX82 BYX83 BYX84 BYX85 BYX86 D-74025 27-Sep-00 PDF

    BYX82

    Abstract: BYX83 BYX84 BYX85 BYX86
    Text: BYX82.BYX86 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Applications 94 9539 Rectifier, general purpose Absolute Maximum Ratings Tj = 25_C


    Original
    BYX82. BYX86 BYX82 BYX83 BYX84 BYX85 D-74025 27-Sep-00 BYX82 BYX83 BYX84 BYX85 BYX86 PDF

    BYX82

    Abstract: BYX83 BYX84 BYX85 BYX86
    Text: BYX82.BYX86 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package D Low reverse current D High surge current loading Applications 94 9539 Rectifier, general purpose Absolute Maximum Ratings Tj = 25_C


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    BYX82. BYX86 BYX83 BYX84 BYX85 BYX82 D-74025 BYX82 BYX83 BYX84 BYX85 BYX86 PDF

    diode byx 65 400

    Abstract: BYX84
    Text: BYX82, BYX83, BYX84, BYX85, BYX86 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Compliant to RoHS directive 2002/95/EC and in


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    BYX82, BYX83, BYX84, BYX85, BYX86 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, BYX82 diode byx 65 400 BYX84 PDF

    BYX85

    Abstract: BYX82 BYX83 BYX84 BYX86
    Text: BYX82.BYX86 Silicon Mesa Rectifiers Features D D D D Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Applications Rectifier, general purpose 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage,


    Original
    BYX82. BYX86 BYX82 BYX83 BYX84 BYX85 D-74025 12-Dec-94 BYX85 BYX82 BYX83 BYX84 BYX86 PDF

    diode byx 65 400

    Abstract: No abstract text available
    Text: BYX82, BYX83, BYX84, BYX85, BYX86 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Material categorization:


    Original
    BYX82, BYX83, BYX84, BYX85, BYX86 OD-57 MIL-STD-750, BYX86 BYX86TR diode byx 65 400 PDF

    SiA483DJ

    Abstract: D 2394 SIA483DJ-T1-GE3
    Text: New Product SiA483DJ Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () (Max.) ID (A) 0.021at VGS = - 10 V - 12a 0.030 at VGS = - 4.5 V - 12a Qg (Typ.) 21 nC PowerPAK SC-70-6L-Single 1 APPLICATIONS D • Smart Phones, Tablet PCs, Mobile Computing:


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    SiA483DJ 021at SC-70 SC-70-6L-Single SiA483DJ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A D 2394 PDF

    mc 51002

    Abstract: 61400 DIODE REDRESSEMENT diode byx diode byx 65 400 byx 35 150 diode LF 306-S MU Thomson-CSF diode BYX 13 400 R Thomson-CSF diodes de redressement
    Text: G SÌC D 1• 7=1^23? 00G2271 4 S-THOMSON Q T H O M BYX 61-50, R BYX 61-400, (R) S O N - C S F DIVISION SEMICONDUCTEURS DISCRETS SUPEBSWITCH FA ST R E C O V E R Y R E C T IF IE R DIODES D IO D E S D E R E D R E S S E M E N T R A P ID E S 59C 02271 d T - o S V / '


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    00G2271 B10la 220cm CB-33) mc 51002 61400 DIODE REDRESSEMENT diode byx diode byx 65 400 byx 35 150 diode LF 306-S MU Thomson-CSF diode BYX 13 400 R Thomson-CSF diodes de redressement PDF

    diode byx

    Abstract: diode byx 65 400 byx 200 BYX 13 400 R 74137 76136 byx85
    Text: IB» BYX 82 O £s BYX 86 O 'W Silizium-Mesa-Dioden Silicon Mesa diodes Anwendung : Leistungsgleichrichter Applications: Pow er rectifier Features: Besondere Merkmale: • Herm etische Glasspassivierung • Hermetically sealed glass passivation • Gute Wärmeableitung über die


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    Untitled

    Abstract: No abstract text available
    Text: G SÌC D 1• 7=1^23? 00G2271 4 S-TH O M SO N Q BYX 61-50, R BYX 61-400, (R) T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPEBSWITCH FA ST R EC O V ERY R E C T IF IE R DIODES D IO D E S D E R E D R E S S E M E N T R A P ID E S 59C 02271 d T - o S V / '


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    00G2271 CB-262 CB-262) CB-19) CB-428) CB-244 PDF

    65400

    Abstract: DIODE REDRESSEMENT diode byx 65 400 equivalente 65400 m jonction 100J B101 b101 diode 319sg
    Text: S^C D I 7 ^ 2 3 7 -THOMSON 59C 0 22 80 Q T H O M S O N aC S F 0 7"^ W 7 B Y B Y J C DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH Q0Ü22ÖG X 6 5 - 5 0 , 6 5 “ 4 0 0 R ( R ) FA S T R E C O V E R Y R E C T IF IE R D IO DES DIODES DE REDRESSEMENT RAPIDES


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    QGG220fl 10-1a B101S CB-34) 65400 DIODE REDRESSEMENT diode byx 65 400 equivalente 65400 m jonction 100J B101 b101 diode 319sg PDF

    BYX 13 400 R

    Abstract: DIODE REDRESSEMENT 100-10L WD BYX62-600 1N3889 1N3893 IN3893 HT-77 vJ26 byx62
    Text: SÌC D I 7 ^ 2 3 7 -THOMSON _ 59C 02065 O THOMSON-CSF DGDEGbS 1 _ D*T' e 3 ' / 7 ~ 1 N 3 8 8 9 ^ 1 N 3 8 9 3 , R B Y X 6 2 6 0 0 (R) DIVISION SEMICONDUCTEURS DISCRETS , SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES FAST RECOVERY


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    3889-1N BYX62 CB-33) BYX 13 400 R DIODE REDRESSEMENT 100-10L WD BYX62-600 1N3889 1N3893 IN3893 HT-77 vJ26 PDF

    Untitled

    Abstract: No abstract text available
    Text: SÌC D I 7 ^ 2 3 7 -THOMSON _ 59C 02065 O THOMSON-CSF DGDEGbS 1 _ D*T' e 3 ' / 7 ~ 1 N 3 8 8 9 ^ 1 N 3 8 9 3 , R B Y X 6 2 6 0 0 (R) DIVISION SEMICONDUCTEURS DISCRETS , SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES FAST RECOVERY


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    100OC) CB-262 CB-262) CB-19) CB-428) CB-244 PDF

    DIODE REDRESSEMENT

    Abstract: diode byx 32 BYX 13 400 R diode byx diode byx 65 400 1N3899 1N3903 25ET thomson diodes BYX 13
    Text: S ÌC S G S-THGMSON D | 7^2^37 D0Ü2Q7M T :.ù X '/ ? 59C O 02074 D 1 N 3 8 9 9 — 1 N 3 9 0 3 , R T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS B Y X 6 3 -6 0 0 , (R ) SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES


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    -28UNF 260cm CB-34) DIODE REDRESSEMENT diode byx 32 BYX 13 400 R diode byx diode byx 65 400 1N3899 1N3903 25ET thomson diodes BYX 13 PDF

    axial zener diodes marking code c3v6

    Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
    Text: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.


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    BR805A BR81A BR82A BR84A BR86A BR88A BR91A BR92A BR94A BR96A axial zener diodes marking code c3v6 H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode PDF

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


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    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


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    tj1k

    Abstract: No abstract text available
    Text: Tem ic BYX82.BYX86 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading Applications 94 9539 Rectifier, general purpose Absolute Maximum Ratings


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    BYX82. BYX86 BYX83 BYX85 tj1k PDF

    Untitled

    Abstract: No abstract text available
    Text: SÌC S G S-THGMSON D | 7^2^37 D0Ü2Q7M T:.ù X '/ ? 5 9C 02074 D 1 N 3 8 9 9 —1 N 3 9 0 3 , R O THOMSON-CSF DIVISION SEMICONDUCTEURS DISCRETS BYX 6 3 -6 0 0 , (R) SUPERSWITCH FA ST R ECO V ERY R E C T IF IE R DIODES DIODES DE RED R ESSEM EN T RAPID ES


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    Tcaje100OCÂ CB-428) 55depth CB-19) CB-244 PDF

    Diode KD 514

    Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
    Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381


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    AC125K

    Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
    Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T


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    76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram PDF