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Abstract: No abstract text available
Text: SK75GD126T =' U BT VIA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT QI:9 =W U BT VI <I =W U @TY VI <I¥; SEMITOP 4 IGBT Module .5'( @BYY Q SS J =' U ZY VI [Z J @OY J ] BY Q =W U @BT VI @Y a' =' U BT VI b@ J =' U ZY VI [S J @TY
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SK75GD126T
c9-00&
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Abstract: No abstract text available
Text: SK 50 DGDL 126 T CONVERTER, INVERTER, BRAKE =' T BR XIA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions Values Units IGBT - Inverter. For IGBT chopper maximum ratings, please refer to SK35DGDL126T PI:9 <I <I^; PG:9 =' T BR [¥Y] XI <I^;T B F <I%,+A .5 T @ +'
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SK35DGDL126T
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Abstract: No abstract text available
Text: FDB2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining
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FDB2614
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DIODE marking S4 59A
Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3
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REJ16G0002-2200
DIODE marking S4 59A
DIODE 1N4148 LL-34
Zener Diode SOD-323 marking code a2
marking v6 zener diode
fairchild marking codes sot-23
RKZ18B2KG
TWPEC 1w402
MTZJ SERIES ZENER DIODES
702 SOT-23 marking KJ
marking 513 SOD-323
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Fairchild Semiconductor DS-513
Abstract: No abstract text available
Text: FDP2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining
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FDP2614
O-220
Fairchild Semiconductor DS-513
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Abstract: No abstract text available
Text: FQB9P25 P-Channel QFET MOSFET -250 V, -9.4 A, 620 mΩ Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state
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FQB9P25
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Abstract: No abstract text available
Text: FDB2710 N-Channel PowerTrench MOSFET 250 V, 50 A, 42.5 mΩ Features General Description • RDS on = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored
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FDB2710
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Abstract: No abstract text available
Text: FDPF2710T N-Channel PowerTrench MOSFET 250 V, 25 A, 42.5 mΩ Features Description • RDS on = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
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FDPF2710T
O-220F
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Abstract: No abstract text available
Text: FQP11P06 P-Channel QFET MOSFET -60 V, -11.4 A, 175 mΩ Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,
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FQP11P06
FQP11P06
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Abstract: No abstract text available
Text: FDP2710 N-Channel PowerTrench MOSFET 250 V, 50 A, 42.5 mΩ Features General Description • RDS on = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has
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FDP2710
O-220
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Abstract: No abstract text available
Text: FQD4P40 P-Channel QFET MOSFET -400 V, -2.7 A, 3.1 Ω Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,
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FQD4P40
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Abstract: No abstract text available
Text: FQP12P10 P-Channel QFET MOSFET -100 V, -11.5 A, 290 mΩ Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,
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FQP12P10
FQP12P10
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rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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Untitled
Abstract: No abstract text available
Text: Data eet Datasheet Co ontroller typ pe switching g regulator with w high fre equency, hig gh accuracy y external FE ET Autom A matica ally Contr C rolled d BuckB -Boos st Sw witching Re egula ator BD9035AE B FV-C Ge eneral Descrip ption The BD9035 5AEFV-C is a buck-boost sw
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BD9035AEFV-C
BD9035
9035AEFV-C
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ZTX653 equivalent
Abstract: ZDT6790 ZXGD3003E6 transistor equivalent ztx1053a ZTX753 equivalent ZDT1049 fmmt417 SOT23-6 NMOS 150V ZTX415 equivalent FZT651
Text: Version 5.0 Discrete and standard IC product guide Discrete and standard IC product guide Zetex Semiconductors is a specialist in analog technology. We design and manufacture semiconductor solutions for the management of power and analog signals in high performance products.
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2002/95/EC)
ISO/TS16949
ZTX653 equivalent
ZDT6790
ZXGD3003E6
transistor equivalent ztx1053a
ZTX753 equivalent
ZDT1049
fmmt417
SOT23-6 NMOS 150V
ZTX415
equivalent FZT651
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86C928
Abstract: BT485 IMSG176 RS-343A TVP3020 TVP3025 D114B 1n148
Text: TVP3025 Data Manual Video Interface Palette SLAS090 June 1994 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before
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TVP3025
SLAS090
86C928
BT485
IMSG176
RS-343A
TVP3020
TVP3025
D114B
1n148
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Untitled
Abstract: No abstract text available
Text: TVP3025 Data Manual Video Interface Palette SLAS090 June 1994 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before
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TVP3025
SLAS090
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nas1580
Abstract: 86C928 cx 23102 BT485 Vision964 IMSG176 RS-343A TVP3020 TVP3025
Text: TVP3025 Data Manual Video Interface Palette SLAS090 June 1994 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before
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TVP3025
SLAS090
nas1580
86C928
cx 23102
BT485
Vision964
IMSG176
RS-343A
TVP3020
TVP3025
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86C928
Abstract: IMSG176 RS-343A TVP3020 TVP3025 BT485 nas1580
Text: TVP3025 Data Manual Video Interface Palette SLAS090 June 1994 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before
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TVP3025
SLAS090
86C928
IMSG176
RS-343A
TVP3020
TVP3025
BT485
nas1580
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EE-19
Abstract: P104 P105 P106 P107 P108 RS-343A TVP3026 TVP3030
Text: TVP3030 Data Manual Video Interface Palette SLAS111 October 1995 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its
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TVP3030
SLAS111
EE-19
P104
P105
P106
P107
P108
RS-343A
TVP3026
TVP3030
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ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
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F-92223
D-7800
ZPD 5.1 ITT
ZPD ITT
diode zener ZD 88
germanium
BYY32
germanium transistor
CJ 4148 ZENER
BAW21
ITT ZPD 11
itt germanium diode
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TRANSISTOR 132-gd
Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Text: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n
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06o3H
TRANSISTOR 132-gd
TRANSISTORS 132 GD
equivalent io transistor 131-G
bbc ds diodes DS 1,8
transistor vergleichsliste
aeg diode Si 61 L
AF124
Transistor Vergleichsliste DDR
OC1044
bbc ds diodes
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AC125K
Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T
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76665N
76889N
MA748PC
MA709PC
jA710PC
A711PC
iA712PC
A723PC
HA741PC
A747PC
AC125K
6AN7
tungsram 3S035T-1
ecc83 application notes
ECL86
DG 7-123
tungsram
AC125UZ
PENTODE pl 508
ot-400 tungsram
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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