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    DIODE C 120 926 Search Results

    DIODE C 120 926 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE C 120 926 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    msc diode

    Abstract: msc stud diode msc stud diode f1 UM2308 UM2302
    Text: 580 Pleasant St. Watertown, MA 02472 PH: 617 926-0404 FAX: (617) 924-1235 UM2300 SERIES Features • • • • • PIN DIODE SWITCH LF band (100 KHz) PIN Long Lifetime (80 µs typ.) High Power (1 KW CW) •High Isolation (35 dB) Low Loss (0.2 dB) •Very Low Distortion (IP3 = > 60 dBm)


    Original     		PDF UM2300 UM2301S MSC0985 msc diode msc stud diode msc stud diode f1 UM2308 UM2302

    MMBD7000

    Abstract: rl 205 diode
    Text: 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 MMBD7000 Features • • • Low Current Leakage Low Cost Small Outline Surface Mount Package 300mW 100Volt Dual Switching Diode C/A Pin Configuration Top View 5C A SOT-23


    Original     		PDF MMBD7000 300mW 100Volt OT-23 MMBD7000 rl 205 diode

    BAW56

    Abstract: No abstract text available
    Text: 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 BAW56 Features • • • Low Current Leakage Low Cost Small Outline Surface Mount Package 300mW 70Volt Dual Switching Diode A Pin Configuration Top View A1 C SOT-23 A C D


    Original     		PDF BAW56 300mW 70Volt OT-23 BAW56

    BAV70

    Abstract: No abstract text available
    Text: 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 BAV70 Features • • • Low Current Leakage Low Cost Small Outline Surface Mount Package 300mW 70Volt Dual Switching Diode C Pin Configuration Top View A4 A SOT-23 A A D


    Original     		PDF BAV70 300mW 70Volt OT-23 BAV70

    A6 sot-23

    Abstract: BAS16
    Text: 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 BAS16 Features • • • Low Current Leakage Low Cost Small Outline Surface Mount Package 300mW 75Volt Switching Diode C Pin Configuration Top View A6 SOT-23 A A D Maximum Ratings


    Original     		PDF BAS16 300mW 75Volt OT-23 A6 sot-23 BAS16

    BAV99

    Abstract: No abstract text available
    Text: 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 BAV99 Features • • • 300mW 70Volt Dual Series Switching Diode Low Current Leakage Low Cost Small Outline Surface Mount Package C/A Pin Configuration Top View A7 A SOT-23


    Original     		PDF BAV99 300mW 70Volt OT-23 BAV99

    UM2300

    Abstract: UM2301 UM2302 UM2304 UM2306 UM2308 UM2310
    Text: 580 Pleasant St. Watertown, MA 02472 PH: 617 926-0404 FAX: (617) 924-1235 UM2300 SERIES Features • • • • • PIN DIODE SWITCH LF band (100 KHz) PIN Long Lifetime (80 µs typ.) High Power (1 KW CW) •High Isolation (35 dB) Low Loss (0.2 dB) •Very Low Distortion (IP3 = > 60 dBm)


    Original     		PDF UM2300 UM2300 500KHz 250KHz 150KHz UM2301 UM2302 UM2304 UM2306 UM2308 UM2310

    S1TP

    Abstract: No abstract text available
    Text: SKiM 350 GD 063 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 600 600 350 / 280 700 / 560 ± 20 926 – 40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SKiM 350 GD 063 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 600 600 350 / 280 700 / 560 ± 20 926 –40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SKiM 350 GD 063 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 600 600 350 / 280 700 / 560 ± 20 926 –40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms


    Original     		PDF

    THS4060

    Abstract: IC 351 SKIM
    Text: SKiM 351 GD 063 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 600 600 350 / 280 700 / 560 ± 20 926 – 40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms


    Original     		PDF

    phototransistor peak 550 nm

    Abstract: Fototransistor phototransistor 550 nm phototransistor 650 nm IC 9260 GEO06840 OHM02257 OHF00601
    Text: Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector SFH 9260 Wesentliche Merkmale • Roter Emitter 660 nm • Silizium Fototransistor • Geringe Sättigungsspannung


    Original     		PDF GEO06840 phototransistor peak 550 nm Fototransistor phototransistor 550 nm phototransistor 650 nm IC 9260 GEO06840 OHM02257 OHF00601

    9260 transistor

    Abstract: No abstract text available
    Text: SFH 9260 Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector 6.2 5.8 3.4 3.0 4.2 3.8 2.1 1.7 0.0.1 0.15 0.13 Vorläufige Daten/Preliminary Data 0.5 0.3 6 5 4 1


    Original     		PDF GEO06840 sfh9260 OHF00499 OHO02260 9260 transistor

    fototransistor

    Abstract: phototransistor peak 550 nm phototransistor 600 nm GEOY6840 OHM02257 OHF00601 lichtschranken-anwendungen 9260 transistor phototransistor 650 nm TP 9260
    Text: Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector SFH 9260 Wesentliche Merkmale • Roter Emitter 660 nm • Silizium Fototransistor • Geringe Sättigungsspannung


    Original     		PDF GEOY6840 fototransistor phototransistor peak 550 nm phototransistor 600 nm GEOY6840 OHM02257 OHF00601 lichtschranken-anwendungen 9260 transistor phototransistor 650 nm TP 9260

    MMBD4148

    Abstract: 5h sot-23
    Text: 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 MMBD4148 Features • • • Low Current Leakage Low Cost Small Outline Surface Mount Package 500mW 100 Volt Silicon Epitaxial Diode C Pin Configuration Top View 5H SOT-23


    Original     		PDF MMBD4148 500mW OT-23 MMBD4148 5h sot-23

    MMDB914

    Abstract: MMBD914
    Text: 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 MMBD914 Features • • • Low Current Leakage Low Cost Small Outline Surface Mount Package 500mW 100 Volt Silicon Epitaxial Diode C Pin Configuration Top View 5D SOT-23


    Original     		PDF MMBD914 500mW OT-23 MMDB914 MMBD914

    MMBT4401

    Abstract: 303 SOT23
    Text: 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 MMBT4401 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Purpose Amplifier C Pin Configuration Top View 2X B E SOT-23 A


    Original     		PDF MMBT4401 OT-23 350mWatts OT-23 10mAdc, 35Vdc, MMBT4401 303 SOT23

    BAT54S

    Abstract: schottky diode bat54 l44 BAT54 BAT54A BAT54C Power Diode 818
    Text: BAT54 thru BAT54S 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • Low Forward Voltage Surface Mount SOT-23 Package Capable of 230mWatts of Power Dissipation Microsemi Catalog Number BAT54 BAT54A BAT54C


    Original     		PDF BAT54 BAT54S OT-23 230mWatts BAT54A BAT54C 230mWatt, 30Volt BAT54S schottky diode bat54 l44 BAT54 BAT54A BAT54C Power Diode 818

    Untitled

    Abstract: No abstract text available
    Text: M Chataworth,CA m Micnosemi Prog ress P o w ered b y T echnology 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features 300mW 70VoIt Dual Series Switching Diode Low Current Leakage Low Cost Small Outline Surface Mount Package


    OCR Scan     		PDF 300mW 70VoIt OT-23 BAV99

    Untitled

    Abstract: No abstract text available
    Text: Micnosemi mt Chatsworth, CA m P ro g fc s s P o w c rp d Dy I c c hn otoq y 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • • Low Current Leakage Low Cost Small Outline Surface Mount Package 300mW 70Volt


    OCR Scan     		PDF 300mW 70Volt OT-23 70Volts BAW56

    Untitled

    Abstract: No abstract text available
    Text: • ■■ Micnosemi Chatsworth, CA M Progress P ow ered b y Technology 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • • Low Forward Voltage Surface Mount SOT-23 Package Capable of 230mW atts of Power Dissipation


    OCR Scan     		PDF OT-23 230mW BAT54 BAT54A BAT54C BAT54S 230mWatt, 30Volt OT-23 240mV

    Untitled

    Abstract: No abstract text available
    Text: • m m Chatsworth, CA m Micmsemi P r o g r e s s P o s te re d D v T e c h n o lo g y 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features Low Current Leakage Metalurgically Bonded Construction Low Cost 500mW 100 Volt


    OCR Scan     		PDF 500mW DO-35 1N914

    DIODE db101

    Abstract: No abstract text available
    Text: Micmsemi h Châtowortti, C A m 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 1 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts Features Through Hole Package Glass Passivated Diode Construction Moisture Resistant Eipoxy Case


    OCR Scan     		PDF DB101 DB102 DB103 DB104 DB105 DB106 DB107 DIODE db101

    Untitled

    Abstract: No abstract text available
    Text: •I Microsemi m m Chattworth, CA m 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 DL914(A)(B) Features Low Current Leakage Metalurgically Bonded Construction Low Cost 500mW 100 Volt Silicon Epitaxial Diode Maximum Ratings


    OCR Scan     		PDF DL914 500mW 01lierwlse DL914