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    DIODE C12 Search Results

    DIODE C12 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE C12 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PDM5001

    Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
    Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH


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    C3557 PH1503 PH150 PDM5001 PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16 PDF

    R22A

    Abstract: transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E
    Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS60-3 Ver: V1.1 Date: 22/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener


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    110VAC ZPS60-3 R22A transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E PDF

    transistor R1d

    Abstract: transistor R1A diode FR 105 TRANSISTOR 106 d1 R22A MTBF-ZPS40 04112 78540 R18A 217F
    Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS40-3 Ver: V1.1 Date: 21/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener


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    110VAC ZPS40-3 transistor R1d transistor R1A diode FR 105 TRANSISTOR 106 d1 R22A MTBF-ZPS40 04112 78540 R18A 217F PDF

    Scans-0017402

    Abstract: general electric bulb thermometer pf 9sg
    Text: — PRODUCT INFORMATION — Page 1 Diode TUBES FOR TV DAMPING DIODE APPLICATIONS LOW TUBE DROP COLOR TV TYPE 6,500 VOLTS DC AND PEAK 400 MILLIAMPERES DC The 34DK3 is a heater-cathode type diode intended for service as the damping diode in the horizontal—deflection


    OCR Scan
    34DK3 K-55611-TD378-1 Scans-0017402 general electric bulb thermometer pf 9sg PDF

    zd1 1014

    Abstract: 217F C10A C12A capacitor ceramic optocupler transistor MTBF
    Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25℃ Load : 110VAC input , Full load Unit : ZPD40-512 Ver: V1.0 Date: 11/29/2004 CAT TYPE Q'ty 5.1 Microcircuits,MOS 1 6.1 Diode,General 1 6.1 Diode,General 1 6.1 Diode, Schottky 1 6.1 Diode, Schottky


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    110VAC ZPD40-512 zd1 1014 217F C10A C12A capacitor ceramic optocupler transistor MTBF PDF

    217F

    Abstract: resistor film transistor MTBF L2 diode 725
    Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-5 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General


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    ZPSA40-5 217F resistor film transistor MTBF L2 diode 725 PDF

    ZPSA60-15

    Abstract: FR 306 Diode 217F
    Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-15 Ver: V11 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General


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    ZPSA60-15 ZPSA60-15 FR 306 Diode 217F PDF

    DIODE 4008

    Abstract: "DIODE" 4008 217F capacitor Electrolytic zener3 optocupler 105 capacitor
    Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-12 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General


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    ZPSA40-12 DIODE 4008 "DIODE" 4008 217F capacitor Electrolytic zener3 optocupler 105 capacitor PDF

    217F

    Abstract: ZPSA60-12 capacitor variable ceramic zd1 1014 105 capacitor
    Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-12 Ver: V11 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General


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    ZPSA60-12 217F ZPSA60-12 capacitor variable ceramic zd1 1014 105 capacitor PDF

    731 zener diode

    Abstract: FR 309 diode 217F diode zener c5 R27A
    Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-5 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General


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    ZPSA60-5 731 zener diode FR 309 diode 217F diode zener c5 R27A PDF

    CON at36a

    Abstract: AT36A DIODE d2 DIODE A4 STEVAL-ISV004V2 DIODE d3 D1 diode 026l2 STEVAL-IS DSASW003737
    Text: 5 4 TP1 3 2 VIN V_OUT C13 4.7uF D3 DIODE VIN 1 V_OUT C12 4.7uF C6 4.7uF TEST POINT VCC D2 C5 D4 1uF TRISIL TEST POINT V_OUT D1 DIODE 1 1 TP2 C11 1uF D5 TRISIL DIODE TP3 1 D CB1 C1 22nF VIN CB3 L1 C3 22nF L3 47uH VIN 47uH L3 2 2 VIN V_OUT L1 D TEST POINT J35


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    220pF AT36A 100kHz, STEVAL-ISV004V2 CON at36a AT36A DIODE d2 DIODE A4 STEVAL-ISV004V2 DIODE d3 D1 diode 026l2 STEVAL-IS DSASW003737 PDF

    diode A157

    Abstract: BAT86
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE BAT86 DO-34 Glass Package Hermetically Sealed, Glass Silicon Diode Ultra High Speed Switching Diode ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    BAT86 DO-34 C-120 BAT86Rev100506E diode A157 BAT86 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE BAT86 DO-34 Glass Package Hermetically Sealed, Glass Silicon Diode Ultra High Speed Switching Diode ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    BAT86 DO-34 C-120 BAT86Rev100506E PDF

    ECONO2-6PACK IGBT module

    Abstract: IC 7425 datasheet IR E78996 IR E78996 105 IRF E78996 E78996 IR ic 4075 datasheet or gate GB35XF120K
    Text: PD - 94570 GB35XF120K IGBT 6PACK MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics


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    GB35XF120K ECONO2-6PACK IGBT module IC 7425 datasheet IR E78996 IR E78996 105 IRF E78996 E78996 IR ic 4075 datasheet or gate GB35XF120K PDF

    GB25RF120K

    Abstract: No abstract text available
    Text: PD - 94552 GB25RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics


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    GB25RF120K indicated360V GB25RF120K PDF

    Untitled

    Abstract: No abstract text available
    Text: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    IRGPS40B120UDP Super-247 Super-247â IRFPS37N50A PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94385A IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    4385A IRGB5B120KD O-220 O-220AB IRF1010 PDF

    420 Diode

    Abstract: 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A
    Text: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    IRGPS40B120UDP Super-247 Super-247TM PS37N50A IRFPS37N50A 420 Diode 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A PDF

    IGBT 60A 1200V

    Abstract: IGBT 1200V 60A IRGB5B120KDPBF TO-220aB rr
    Text: PD - 95617 IRGB5B120KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    IRGB5B120KDPbF O-220 O-220AB O-220AB. O-220AB IGBT 60A 1200V IGBT 1200V 60A IRGB5B120KDPBF TO-220aB rr PDF

    IRGB5B120KDPBF

    Abstract: No abstract text available
    Text: PD - 95617 IRGB5B120KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    IRGB5B120KDPbF O-220 O-220AB O-220AB IRGB5B120KDPBF PDF

    IGBT 900v 60a

    Abstract: No abstract text available
    Text: PD - 95617 IRGB5B120KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    IRGB5B120KDPbF O-220 O-220AB O-220AB IGBT 900v 60a PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95617 IRGB5B120KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    IRGB5B120KDPbF O-220 O-220AB O-220AB PDF

    800v irf

    Abstract: IGBT 900V 80A ir igbt 1200V 40A IRF 725 IRGP8B120KD-E 40A vp
    Text: PD - 94386A IRGP8B120KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    4386A IRGP8B120KD-E O-247AD O-247AD O-247 800v irf IGBT 900V 80A ir igbt 1200V 40A IRF 725 IRGP8B120KD-E 40A vp PDF

    melf diode code

    Abstract: glass mini melf diode mini melf diode Schottky melf BAS85
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE BAS85 SOD - 80C Mini MELF LL- 34 Polarity: Cathode is indicated by a grey band Hermetically Sealed, Glass Silicon Diode Ultra High Speed Switching Diode


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    BAS85 C-120 BAS85Rev121105E melf diode code glass mini melf diode mini melf diode Schottky melf BAS85 PDF