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    DIODE C142 Search Results

    DIODE C142 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE C142 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    THOMSON-CSF Power Laser diode

    Abstract: cogema 4210X
    Text: TH-C1420-R n ACTIVELY COOLED 20W CW LINEAR BAR ARRAY DESCRIPTION The TH-C1420-R(n) product is based upon a highly performing 20W CW Laser Diode Bar Array. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm "bar".The bar is mounted with the active zone


    Original     		PDF TH-C1420-R THOMSON-CSF Power Laser diode cogema 4210X

    TH-C1417-PO

    Abstract: THOMSON-CSF Power Laser diode
    Text: TH-C1420-P / TH-C1417-PO ACTIVELY COOLED 20W CW LINEAR BAR ARRAY 17W CW COLLIMATED DESCRIPTION The TH-C1420-P product is a highly performing 20W CW Laser Diode Bar Array assembled on a water cooled package. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm "bar".The


    Original     		PDF TH-C1420-P TH-C1417-PO TH-C1417-PO, TH-C1417-PO THOMSON-CSF Power Laser diode

    BC647

    Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
    Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23


    Original     		PDF MMBD4148 200MA OT-23 MBR0540 OD-123 1000MA DO-214AC B340A 5245B 225MW BC647 bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645

    77C7

    Abstract: 887c 1r12r
    Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23


    Original     		PDF

    R222 smd

    Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
    Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP


    Original     		PDF CA-001175 BA41-00418A BA62-00194A BA62-00306A BA68-40005L 120OHM 143OHM/132MHZ 213OHM/390MHZ, R222 smd RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548

    samsung r540

    Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
    Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP


    Original     		PDF ZD500 QF500 RHU002N06 200MA OT-323 F820P 33x33mm 500MHz K4J52324QC 512Mbit samsung r540 Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535

    quantum well

    Abstract: 20 watt laser diode
    Text: TH-C1420-S 20W CW LINEAR BAR ARRAY DESCRIPTION The TH-C1420-S is a high optical power laser diode source operating at 20 Watt in CW mode. This linear bar array is ideal for applications which request high output power like pumping solid state lasers , illuminators , beacons ,.


    Original     		PDF TH-C1420-S TH-C1420-S 795nm 860nm quantum well 20 watt laser diode

    new bright R288-2

    Abstract: 24c08an new bright R288 ac14g ICS950405 CADIN14 K8T800 y532 quanta PHD108NQ03LT
    Text: 5 4 3 2 1 ZI5 SYSTEM BLOCK DIAGRAM H/W MONITOR D THERMAL DIODE IN 200/266/333MHZ AMD Althon 64 P3 DDR DIMM P3, 4 DC/DC SMDDR_VTERM BOM mark ＊:no stuff P@:with PR stuff ＊@:with PR no stuff 19V IN P27,28 D DDR DIMM HyperTransport Link Y2-14.318MHz Y1-27MHz


    Original     		PDF 200/266/333MHZ Y1-27MHz Y2-14 318MHz ICS950405 M10/M11 K8T800 Y5-32 768MHz 266/533MB/s new bright R288-2 24c08an new bright R288 ac14g ICS950405 CADIN14 K8T800 y532 quanta PHD108NQ03LT

    SWITCHING TRANSISTOR C144

    Abstract: C143 T transistor C143 E S S transistor SWITCHING TRANSISTOR C145 C143 E S e transistor transistor c143 ge c147 C143 E S j transistor C143 E S X transistor c143 transistor
    Text: PD - 5.026 CPV362MF Fast IGBT IGBT SIP MODULE 1 Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for medium operating frequency 1 to 10kHz


    Original     		PDF CPV362MF 10kHz) 360Vdc, 13-pin) C-148 SWITCHING TRANSISTOR C144 C143 T transistor C143 E S S transistor SWITCHING TRANSISTOR C145 C143 E S e transistor transistor c143 ge c147 C143 E S j transistor C143 E S X transistor c143 transistor

    SWITCHING TRANSISTOR C144

    Abstract: C143 Transistor Ic C 141 C143 E S e transistor transistor c143 C143 T transistor C-145 CPV362MF ge c147 C143 E S j transistor
    Text: Previous Datasheet Index Next Data Sheet PD - 5.026 CPV362MF Fast IGBT IGBT SIP MODULE 1 Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for medium operating frequency 1 to 10kHz


    Original     		PDF CPV362MF 10kHz) 360Vdc, 13-pin) C-148 SWITCHING TRANSISTOR C144 C143 Transistor Ic C 141 C143 E S e transistor transistor c143 C143 T transistor C-145 CPV362MF ge c147 C143 E S j transistor

    Diode KD 521 a

    Abstract: U106B U106A operational amplifier discrete schematic POWER AMPLIFIER CIRCUIT DIAGRAM 10000 schematics for a PA amplifier CX77301 LMV722 PL19 CLASS diode rf DETECTOR
    Text: APPLICATION NOTE Power Amplifier Control For ETSI 11.10-Compliant Cellular Handsets 1 Simplifying: Introduction Vo KaKs = DSP 1 + K a K s K d K c Controlling the power amplifier in a Global System for Mobile Communications (GSM ) compatible radio is one of the more


    Original     		PDF 10-Compliant Diode KD 521 a U106B U106A operational amplifier discrete schematic POWER AMPLIFIER CIRCUIT DIAGRAM 10000 schematics for a PA amplifier CX77301 LMV722 PL19 CLASS diode rf DETECTOR

    EMC142X

    Abstract: 2N7002 EMC1422
    Text: AN 17.0 EMC142X Pullup Resistor Circuit Considerations 1 Preface This application note provides information on the pullup resistors used for selecting temperature limits on EMC142X devices. 2 Audience This application note assumes that the reader is familiar with hardware design and the functionality of


    Original     		PDF EMC142X EMC1422, EMC1423, EMC1424. 2N7002 EMC1422

    diode zener c72

    Abstract: u34 diode C137 philips smt r100 resistor C143 led 10w PAL26V12 Philips zener diode ct2 diode U 34 C83 diode zener c55 C82 diode zener cr9
    Text: Am186CC ISDN Router Reference Design Revised: Friday, April 09, 1999 Revision: 2.1 C Advanced Micro Devices, Inc. (800) 222-9323 5204 E. Ben White Blvd. Austin, TX 78741 AMD Proprietary/All Rights Reserved Bill Of Materials May 24,1999 Item Part 4700pF 0.022uF


    Original     		PDF Am186CC 4700pF 022uF 047uF OT-23 001uF 330uF 3300pF 220pF C17vations diode zener c72 u34 diode C137 philips smt r100 resistor C143 led 10w PAL26V12 Philips zener diode ct2 diode U 34 C83 diode zener c55 C82 diode zener cr9

    C135-C138

    Abstract: GRM32ER61C106K c86 msop-8 R62-R67 transistor c114 chip cap smt 2.2uf 0603 npo 50v 06035A470JAT1A schottky diode 180A R46 MSOP diode zener c72
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 561A 6-PHASE 90A / 12-PHASE 180A HIGH EFFIICENCY POWER SUPPLY LTC3731 DESCRIPTION Demonstration circuit 561 is a high current stepTM down PolyPhase converter featuring the LTC 3731 three-phase synchronous buck controller. To minimize the supply footprint size and improve the thermal performance, the 5mm x 5mm QFN package


    Original     		PDF 12-PHASE LTC3731 LTC3731CUH LTC3731 250kHz 600kHz DC561A-A DC561A-B C135-C138 GRM32ER61C106K c86 msop-8 R62-R67 transistor c114 chip cap smt 2.2uf 0603 npo 50v 06035A470JAT1A schottky diode 180A R46 MSOP diode zener c72

    TPA2020

    Abstract: ISS355 fairchild diode aa14 diode BUG C332 max1987 FBM-11-160808-301A20T D46 diode Maxim MAX1987 r5c551 fairchild aa11
    Text: 5 3 2 1 First International Computer,Inc Protable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : MB02 2. PCI & IRQ & DMA Description : D 3. Block Diagram : Version : 0.4A C 4. Net name Description :


    Original     		PDF September/20 NO266 1/16W 1000pF HCB2012K-601T20 TPA2020 ISS355 fairchild diode aa14 diode BUG C332 max1987 FBM-11-160808-301A20T D46 diode Maxim MAX1987 r5c551 fairchild aa11

    TH-C1417-PO

    Abstract: No abstract text available
    Text: TH-C1420-PI TH-C1417-PO ACTIVELY COOLED 20W CW LINEAR BAR ARRAY _ 17W CW COLLIMATED _ DESCRIPTION The TH-C1420-P product is a highly performing 20W CW Laser Diode Bar Array soldered on a water cooled package. The Laser Diode structure is multiple emitters spaced on a


    OCR Scan     		PDF TH-C1420-PI TH-C1417-PO TH-C1420-P TH-C1417-PO, 8002-ed2 TH-C1417-PO

    Untitled

    Abstract: No abstract text available
    Text: TH-C1420-R,n ACTIVELY COOLED 20W CW LINEAR BAR ARRAY DESCRIPTION The TH-C1420-R n) product is based upon a highly performing 20W CW Laser Diode Bar Array. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm "bar". The bar is mounted with the active zone towards an actively cooled


    OCR Scan     		PDF TH-C1420-R 8003-ed2

    Untitled

    Abstract: No abstract text available
    Text: TH-C1420-S 20W CW LINEAR BAR ARRAY d e s c r i p t i o n _ The TH-C1420-S is a high optical power laser diode source operating at 20 Watt in C W mode. This linear bar array is ideal for applications which request high output power like


    OCR Scan     		PDF TH-C1420-S TH-C1420-S K8004-ed2

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


    OCR Scan     		PDF

    BTS555P

    Abstract: TO218AB package SIEMENS 3 TB 40 12 - 0A TO-218AB Package TO-218AB siemens 12V small relays SIEMENS 3 TB 40 10 - 0A Smart Highside High Current Power Switch
    Text: flEBSbDS SIEM ENS □ D ‘ì 2 c142 GET PROFET Target Data Sheet BTS 555 P Smart Highside High Current Power Switch Features • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Overtemperature protection


    OCR Scan     		PDF O-218AB/5 BTS555P Q67060-tbd-tbd E3146 E3146 Q67060-tbd-tbd 023SbOS TO218AB package SIEMENS 3 TB 40 12 - 0A TO-218AB Package TO-218AB siemens 12V small relays SIEMENS 3 TB 40 10 - 0A Smart Highside High Current Power Switch

    SIEMENS 3 TB 40 12 - 0A

    Abstract: BTS555P BTS555 siemens profet siemens 12V small relays BTS current sense siemens SIEMENS 3 TB 40 10 - 0A
    Text: flEBSbDS SIEM ENS □ D ‘ì 2 c142 GET PROFET Target Data Sheet BTS 555 P Smart Highside High Current Power Switch Features • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Overtemperature protection


    OCR Scan     		PDF O-218AB/5 BTS555P Q67060-tbd-tbd O-218AB/5 E3146 BTS555P E3146 023SbOS SIEMENS 3 TB 40 12 - 0A BTS555 siemens profet siemens 12V small relays BTS current sense siemens SIEMENS 3 TB 40 10 - 0A

    4X4 ANALOG crosspoint switch

    Abstract: CD22100 MC145100 ot 409 MC142100
    Text: L b3b?E53 DGÖTEBfi MG'! • M O T S bbE J> MOTOROLA SEMICONDUCTOR MOTOROLA SC TELECOM TECHNICAL DATA M C142100 M C145100 4 x 4 C ro sspo in t S w itch w ith Control M em ory The MC142100 and MC145100 consist of 16 crosspoint switches (analog transmission gates) organized in 4 rows and 4 columns. Both devices have 16


    OCR Scan     		PDF MC142100 MC145100 MC145100, MC145100 mc14xxxx 4X4 ANALOG crosspoint switch CD22100 ot 409

    SWITCHING TRANSISTOR C144

    Abstract: C144 transistor transistor c144 ge c147 c144 diode C144 e s j
    Text: PD - 5.026 International iür]Rectifier CPV362MF Fast IGBT IGBTSIP MODULE Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for medium operating frequency 1 to 10kHz


    OCR Scan     		PDF 10kHz) CPV362MF 360Vdc, modu17 C-147 13-pin) C-148 SWITCHING TRANSISTOR C144 C144 transistor transistor c144 ge c147 c144 diode C144 e s j

    UG 77A DIODE

    Abstract: mosfet p-channel 300v MOSFET N-CH 200V DT92A international rectifier 137 IRF7317 ug 77A
    Text: PD - 9.1568A International IGR Rectifier IRF7317 HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated N-CHANNEL MOSFET î _8 IS 2 Voss • & P-Ch 20V -20V


    OCR Scan     		PDF IRF7317 C-142 C-143 UG 77A DIODE mosfet p-channel 300v MOSFET N-CH 200V DT92A international rectifier 137 IRF7317 ug 77A