CW laser diode 808 nm
Abstract: 1 Watt 808 nm laser diode laser diode 808nm
Text: TH-C1730-H & TH-C5530-H / TH-C1840-H CONDUCTIVELY COOLED CW LINEAR BAR ARRAY DESCRIPTION The TH-C1730-H, TH-5530-H and TH-C1840-H products are based upon highly performing 30W and 40W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a
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TH-C1730-H
TH-C5530-H
TH-C1840-H
TH-C1730-H,
TH-5530-H
TH-C1840-H
8030-ed1
CW laser diode 808 nm
1 Watt 808 nm laser diode
laser diode 808nm
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Untitled
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL BAS86 VOLTAGE RANGE: 50 V CURRENT: 0.2 A SMALL SIGNAL SCHOTTKY DIODE FEATURES Mini-melf For general purpose applications This diode features very low turn-on voltage and fast switching. These devices are protected Cathode indification
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BAS86
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Untitled
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL BAS85 VOLTAGE RANGE: 30 V CURRENT: 0.2 A SMALL SIGNAL SCHOTTKY DIODE FEATURES Mini-melf For general purpose applications This diode features very low turn-on voltage Cathode indification and fast switching. These devices are protected
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BAS85
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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R222 smd
Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP
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CA-001175
BA41-00418A
BA62-00194A
BA62-00306A
BA68-40005L
120OHM
143OHM/132MHZ
213OHM/390MHZ,
R222 smd
RA516-1
2007-000162
RA523-1
C627 SOT-23
smd R540
63MIL
d516 gp
SMD R618
SMD C548
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diode C55
Abstract: CMDSH05-4 SOD-323 C55 MARKING CMDSH05-4 sod-323 "junction to case" diode SOD-323 sod-323 diode MARKING CODE 4 schottky diode sod diode marking 35
Text: Central CMDSH05-4 SURFACE MOUNT SUPERminiTM LOW VF SILICON SCHOTTKY DIODE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH05-4 is a 40 volt Schottky Diode packaged in a space saving surface mount SOD-323 case. This SUPERmini device has been designed for
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CMDSH05-4
CMDSH05-4
OD-323
100mA
500mA
07-September
diode C55
CMDSH05-4 SOD-323
C55 MARKING
sod-323 "junction to case"
diode SOD-323
sod-323 diode MARKING CODE 4
schottky diode
sod diode marking 35
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samsung r540
Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP
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ZD500
QF500
RHU002N06
200MA
OT-323
F820P
33x33mm
500MHz
K4J52324QC
512Mbit
samsung r540
Samsung R590
R721-R725
C732 SMD
10000NF
R616 R617
R714-R715
samsung r580
b16 r649
Smd q535
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Untitled
Abstract: No abstract text available
Text: BAS86 Small Signal Schottky Diode VOLTAGE RANGE: 50 V CURRENT: 0.2 A Mini-melf Features Cathode indification For general purpose applications φ1 .5±0.1 This diode features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive
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BAS86
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Untitled
Abstract: No abstract text available
Text: CMDSH05-4 SURFACE MOUNT LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH05-4 is a 40 volt Schottky Diode packaged in a space saving surface mount SOD-323 case. This SUPERmini device has been designed for
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CMDSH05-4
CMDSH05-4
OD-323
100mA
500mA
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CMDSH05-4
Abstract: CMDSH05-4 SOD-323 diode C55 Marking code L SOD-323 Marking code L SOD-323 diode C55
Text: CMDSH05-4 SURFACE MOUNT LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH05-4 is a 40 volt Schottky Diode packaged in a space saving surface mount SOD-323 case. This SUPERmini device has been designed for
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CMDSH05-4
CMDSH05-4
OD-323
100mA
500mA
CMDSH05-4 SOD-323
diode C55
Marking code L SOD-323
Marking code L SOD-323 diode C55
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Untitled
Abstract: No abstract text available
Text: TH-C5520-S / TH-C5530-S TH-C5520-P / TH-C5530-P 940nm CW LINEAR BAR ARRAY DESCRIPTION The TH-C5520-S and TH-C5530-S products are a highly performing 20W CW and 30W CW, 940nm Laser Diode Bar Array assembled on a conductively cooled package. An actively cooled package is also available ‘P’
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TH-C5520-S
TH-C5530-S
TH-C5520-P
TH-C5530-P
940nm
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PTD4061-4XXX
Abstract: HI-TECH c18 G957 IEC825
Text: www.neophotonics.com VER000/ 190307 PTD4061-4XXX + 2.5Gbps DWDM SFP Transceiver 1 1.1 Features Transceiver unit with independent DWDM DFB laser diode transmitter APD photodiode receiver 1.2 Compliant with DWDM SFP MSA 1.3 Compliant with SFP MSA with duplex LC receptacle
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VER000/
PTD4061-4XXX(
100GHz
PTD4061-4XXX
HI-TECH c18
G957
IEC825
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PTD5061-5XXX
Abstract: 160km HI-TECH c18 neophotonics 1000BASE-LX G957 IEC825 BLD 128 D
Text: www.neophotonics.com VER000/ 051308 PTD5061-5XXX + 2.5Gbps DWDM SFP Transceiver 1 1.1 Features Transceiver unit with independent DWDM DFB laser diode transmitter APD photodiode receiver 1.2 Compliant with DWDM SFP MSA 1.3 Compliant with SFP MSA with duplex LC receptacle
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VER000/
PTD5061-5XXX(
100GHz
PTD5061-5XXX
160km
HI-TECH c18
neophotonics
1000BASE-LX
G957
IEC825
BLD 128 D
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diode 1n6263
Abstract: 1N6263
Text: BL GALAXY ELECTRICAL SMALL SIGNAL SCHOTTKY DIODE 1N6263 VOLTAGE RANGE: 60 V POWER DISSIPATION:400 mW FEATURES DO - 35 GLASS For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage
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1N6263
DO--35
diode 1n6263
1N6263
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Untitled
Abstract: No abstract text available
Text: BAT41 Small Signal Schottky Diodes VOLTAGE RANGE: 100 V CURRENT: 100 mA Features DO - 35 GLASS For general purpose applications This diode features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive
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BAT41
DO--35
tp10ms
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Untitled
Abstract: No abstract text available
Text: BAT85 Small Signal Schottky Diodes VOLTAGE RANGE: 30 V CURRENT: 0.2 A Features For general purpose applications DO - 35 GLASS This diode features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive
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BAT85
DO--35
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Untitled
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL SMALL SIGNAL SCHOTTKY DIODE LL45 VOLTAGE RANGE: 15 V CURRENT: 30 mA FEATURES MINI-MELF For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage Cathode indification
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BAS85
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL BAS85 VOLTAGE RANGE: 30 V CURRENT: 0.2 A SMALL SIGNAL SCHOTTKY DIODES FEATURES Mini-melf For general purpose applications This diode features very low turn-on voltage and fast switching. These devices are protected SOLDERABLE ENDS by a PN junction guard ring against excessive
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BAS85
BAS85
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multiple wavelength laser
Abstract: No abstract text available
Text: TH-C5520-S or PI TH-C5530-S or P 940nm CW LINEAR BAR ARRAY DESCRIPTION The TH-C5520-S and TH-C5530-S products are a highly performing 20W CW and 30W CW, 940nm Laser Diode Bar Array assembled on a conductively cooled package. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm
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TH-C5520-S
TH-C5530-S
940nm
8009-ed2
multiple wavelength laser
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FA08TA60C
Abstract: C555
Text: International Rectifier IOR HEXFRED PD -2.601 HFA08TA60C Ultrafast, Soft Recovery Diode Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions VF = 1.8V
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HFA08TA60C
FA08TA60C
C555
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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7.5kv diode
Abstract: No abstract text available
Text: RECTIFIER, up to 7.5kV, 180mA, 300ns January 7, 1998 QUICK REFERENCE DATA V r = 5 - 7.5kV = 180mA If trr = 300nS Ir = 0.25^A F50 F75 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE FAST RECTIFIER DIODE
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180mA,
300ns
TEL805-498-2111
180mA
300nS
7.5kv diode
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7.5kv diode
Abstract: No abstract text available
Text: RECTIFIER, up to 7.5kV, 180mA, 300ns January 7, 1998 QUICK REFERENCE DATA V r = 5 - 7.5kV If = 180mA trr = 300nS Ir = 0.25^A F50 F75 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE FAST RECTIFIER DIODE
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180mA,
300ns
TEL805-498-2111
180mA
300nS
7.5kv diode
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