c5v diode
Abstract: KDV1470
Text: KDV1470 SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA FM RADIO BAND TUNING APPLICATION. FEATURES High Capacitance Ratio : C1V/C5V=5.0 Min. E B L L Excellent C-V Characteristics. D Variations of Capacitance Values is Little.
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KDV1470
c5v diode
KDV1470
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K 3677
Abstract: KDV1471 diode c5v 3016 sot
Text: KDV1471 SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA FM RADIO BAND TUNING APPLICATION. FEATURES High Capacitance Ratio : C1V/C5V=5.0 Min. E B L L Excellent C-V Characteristics. D Variations of Capacitance Values is Little.
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KDV1471
OT-23
100MHz
K 3677
KDV1471
diode c5v
3016 sot
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C100P
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KDV1470 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. FEATURES E B L ・High Capacitance Ratio : C1V/C5V=5.0 Min. L ・Variations of Capacitance Values is Little. D ・Excellent C-V Characteristics.
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KDV1470
C100P
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F15030
Abstract: c5v diode KDV1472
Text: SEMICONDUCTOR TECHNICAL DATA KDV1472 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. L K H F ᴌVariations of Capacitance Values is Little. A ᴌExcellent C-V Characteristics. 1 E ᴌHigh Capacitance Ratio : C1V/C5V=5.0 Min.
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KDV1472
F15030
c5v diode
KDV1472
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c5v diode
Abstract: KDV1472 M/1N 2002 diode
Text: SEMICONDUCTOR TECHNICAL DATA KDV1472 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. K L H F Variations of Capacitance Values is Little. A Excellent C-V Characteristics. 1 E High Capacitance Ratio : C1V/C5V=5.0 Min.
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KDV1472
c5v diode
KDV1472
M/1N 2002 diode
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c5v diode
Abstract: KDV1471
Text: KDV1471 SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA FM RADIO BAND TUNING APPLICATION. FEATURES ᴌHigh Capacitance Ratio : C1V/C5V=5.0 Min. E B L L ᴌExcellent C-V Characteristics. 2 3 G H A ᴌSmall Package. D
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KDV1471
c5v diode
KDV1471
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KDV1472 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. L K H F ・Variations of Capacitance Values is Little. A ・Excellent C-V Characteristics. 1 E ・High Capacitance Ratio : C1V/C5V=5.0 Min.
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KDV1472
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diode c5v
Abstract: ir10 diode c5v diode diode IR10 max20038
Text: SEMICONDUCTOR TECHNICAL DATA KDV251M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR C/P, CB PLL FEATURES ・Low Series Resistance : 0.6Ω Max. ・High Capacitance Ratio : 1.7(Min.)～2.2(Max.) MAXIMUM RATING (Ta=25℃) CHARACTERISTIC
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KDV251M/S
50MHz
diode c5v
ir10 diode
c5v diode
diode IR10
max20038
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 SOT-323 Plastic-Encapsulate DIODE BZX84C2V4W-BZX84C39W ZENER DIODE FEATURES z Planar Die Construction z 200mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation
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OT-323
OT-323
BZX84C2V4W-BZX84C39W
200mW
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diode zener Z11
Abstract: Y415 Y6 ZENER DIODE C18 zener Zener diode z12 15 BZX84C2V4 BZX84C2V7 BZX84C3V0 BZX84C3V3 BZX84C3V9
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BZX84C2V4-BZX84C39 SOT-23 ZENER DIODE FEATURES z Planar Die Construction z 350mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation
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OT-23
BZX84C2V4-BZX84C39
OT-23
350mW
diode zener Z11
Y415
Y6 ZENER DIODE
C18 zener
Zener diode z12 15
BZX84C2V4
BZX84C2V7
BZX84C3V0
BZX84C3V3
BZX84C3V9
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kpe 153
Abstract: KPB datasheet BZX84C2V4W BZX84C2V7W BZX84C3V0W BZX84C3V3W BZX84C3V6W BZX84C3V9W BZX84C4V3W BZX84C4V7W
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE BZX84C2V4W-BZX84C39W ZENER SOT-323 DIODE FEATURES z Planar Die Construction z 200mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation
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OT-323
BZX84C2V4W-BZX84C39W
OT-323
200mW
kpe 153
KPB datasheet
BZX84C2V4W
BZX84C2V7W
BZX84C3V0W
BZX84C3V3W
BZX84C3V6W
BZX84C3V9W
BZX84C4V3W
BZX84C4V7W
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 SOT-23 Plastic-Encapsulate DIODE BZX84C2V4-BZX84C39 ZENER DIODE FEATURES z Planar Die Construction z 300mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation
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OT-23
OT-23
BZX84C2V4-BZX84C39
300mW
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 SOT-23 Plastic-Encapsulate DIODE BZX84C2V4-BZX84C39 ZENER DIODE FEATURES z Planar Die Construction z 300mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation
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OT-23
OT-23
BZX84C2V4-BZX84C39
300mW
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BZX84C2V4-BZX84C39 SOT-23 ZENER DIODE FEATURES z Planar Die Construction z 350mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation
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OT-23
BZX84C2V4-BZX84C39
OT-23
350mW
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kpc 45 94v-0
Abstract: MARKING CODE KRC zener diode c18 BZX84C11TS BZX84C16TS
Text: BZX84C2V4TS - BZX84C39TS NEW PRODUCT TRIPLE SURFACE MOUNT ZENER DIODE ARRAY Features • · · Zener Voltages from 2.4 - 39V Three Isolated Diode Elements in a Single Ultra-Small Surface Mount Package Also Available in Lead Free Version SOT-363 A C1 C2 C3 KXX YM
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BZX84C2V4TS
BZX84C39TS
OT-363
OT-363,
J-STD-020A
MIL-STD-202,
DS30187
kpc 45 94v-0
MARKING CODE KRC
zener diode c18
BZX84C11TS
BZX84C16TS
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c5v diode
Abstract: diode c5v
Text: KDV251M/S SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA VCO FOR C/P, CB PLL B A FEATURES Low Series Resistance : 0.6 Max. O F High Capacitance Ratio : 1.7(Min.) 2.2(Max.) H G M RATING UNIT Reverse Voltage VR 12 V
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KDV251M/S
50MHz
c5v diode
diode c5v
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smd zener diode code DE
Abstract: Zener diode smd marking 22 zener smd marking de Zener diode smd marking code w1 D31 SMD MARKING axial zener diodes marking code c3v6 D31 SMD CODE BZD84C51
Text: Formosa MS SMD Zener Diode BZD84 SERIES List List. 1 Package outline. 2 Features. 2
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BZD84
MIL-STD-750D
METHOD-1051
125oC
METHOD-1056
METHOD-4066-2
1000hrs.
smd zener diode code DE
Zener diode smd marking 22
zener smd marking de
Zener diode smd marking code w1
D31 SMD MARKING
axial zener diodes marking code c3v6
D31 SMD CODE
BZD84C51
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marking KDL
Abstract: KDS DATE CODE KDK SOT-23 zener sot-23 marking 330 smd code marking c43 sot23 kds 0037 sot23 zenner 5.6 volts zener diode specifications
Text: Formosa MS SMD Zener Diode BZD84 SERIES List List. 1 Package outline. 2 Features. 2
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BZD84
MIL-STD-750D
METHOD-1051
125oC
METHOD-1056
METHOD-4066-2
1000hrs.
marking KDL
KDS DATE CODE
KDK SOT-23
zener sot-23 marking 330
smd code marking c43 sot23
kds 0037
sot23 zenner
5.6 volts zener diode specifications
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kpc 45 94v-0
Abstract: KPC 45 94V KPB datasheet BZX84C2V4TS BZX84C2V7TS BZX84C39TS BZX84C3V0TS BZX84C3V3TS BZX84C6V2TS-7 J-STD-020A
Text: BZX84C2V4TS - BZX84C39TS NEW PRODUCT TRIPLE SURFACE MOUNT ZENER DIODE ARRAY Features • · Zener Voltages from 2.4 - 39V Three Isolated Diode Elements in a Single Ultra-Small Surface Mount Package. SOT-363 A C1 · · · C3 KXX YM Mechanical Data · · · ·
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BZX84C2V4TS
BZX84C39TS
OT-363
OT-363,
J-STD-020A
MIL-STD-202,
DS30187
kpc 45 94v-0
KPC 45 94V
KPB datasheet
BZX84C2V7TS
BZX84C39TS
BZX84C3V0TS
BZX84C3V3TS
BZX84C6V2TS-7
J-STD-020A
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V1470
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KDV1470 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. FEATURES • • • • High Capacitance Ratio : Civ/C5v=5.0 Min. Excellent C-V Characteristics. Variations of Capacitance Values is Little.
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V1470
V1470
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lm 742
Abstract: No abstract text available
Text: SEM IC O N D U C TO R TE CHNICAL DATA KDV1470 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO B A N D T U N IN G A PPLICATION. F EA TU RES • High Capacitance Ratio : C lv/C5V=5.0 Min. • Excellent C-V Characteristics. • Variations o f Capacitance Values is Little.
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KDV1470
OT-23
100MH
lm 742
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c5v diode
Abstract: KDV251M KDV251S 127 S0T23 cov marking S0T23
Text: SEMICONDUCTOR TECHNICAL DATA KDV251M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR C/P, CB PLL FEATURES • Low Series Resistance : 0.6£2 Max. • High Capacitance Ratio : 1.7(Min.) —2.2(Max.) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
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KDV251M/S
KDV251M
O-92M
S0T-23
10juA
50MHz
c5v diode
KDV251M
KDV251S
127 S0T23
cov marking
S0T23
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HJ 13002
Abstract: KDV251M KDV251S c5v diode 10Qt cov marking cov sot23
Text: K EC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KDV251M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR C/P, CB PLL FEATURES • Low Series Resistance : 0.612 Max. • High Capacitance Ratio : 1.7(Min.)~2.2(Max.) MAXIMUM RATINGS (Ta=25°C)
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KDV251M/S
KDV251M
O-92M
KDV251S
10juA
50MHz
HJ 13002
KDV251M
KDV251S
c5v diode
10Qt
cov marking
cov sot23
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Z1073
Abstract: z1071 z1072 DIODE BZX C9VI Z1075 83C12 83C10 83C13 DIODE BZX 83
Text: BZX83 Silicon Z diode for 500 mW BZX 83 is an epitaxial silicon planar Z diode in a glass case 56 A 2 DIN 41883 D O -35 . It is used for the stabilization and limitation of voltages as well as for the generation of reference voltages at low power requirements.
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BZX83
DO-35)
Q62702
Q62702-Q62702â
Q62702I_
Z1073
z1071
z1072
DIODE BZX
C9VI
Z1075
83C12
83C10
83C13
DIODE BZX 83
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