VISHAY diode MARKING ED
Abstract: VISHAY MARKING ED ED MARKING Vishay K77 diode VISHAY MARKING EA BAT750 BAT750-GS08 BAT750-GS18
Text: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case
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BAT750
OT-23
BAT750-GS18
BAT750-GS08
D-74025
24-May-04
VISHAY diode MARKING ED
VISHAY MARKING ED
ED MARKING Vishay
K77 diode
VISHAY MARKING EA
BAT750
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VISHAY diode MARKING ED
Abstract: VISHAY MARKING ED diode k77 K77 diode
Text: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case
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BAT750
OT-23
BAT750
BAT750-GS18
BAT750-GS08
08-Apr-05
VISHAY diode MARKING ED
VISHAY MARKING ED
diode k77
K77 diode
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PFW3500
Abstract: PFW3501 PFW3502 PFW3504 PFW3506 PFW3508 PFW3510 ic shipping tray jedec tray
Text: PFW3500 – PFW3510 W TE PO WE R SEM IC O ND U C TO RS 35A 1/2" FLAG LEAD PRESS-FIT DIODE Features ! Diffused Junction ! ! ! ! Low Leakage Low Cost High Surge Current Capability Typical IR less than 10µA J D Mechanical Data ! ! ! ! ! H Case: All Copper Case and Components
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PFW3500
PFW3510
PFW3502R
PFW3510R)
DO-21
10accuracies.
PFW3500
PFW3501
PFW3502
PFW3504
PFW3506
PFW3508
PFW3510
ic shipping tray
jedec tray
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Package tray
Abstract: PFW5000 PFW5001 PFW5002 PFW5004 PFW5006 PFW5008 PFW5010
Text: PFW5000 – PFW5010 W TE PO WE R SEM IC O ND U C TO RS 50A FLAG LEAD 1/2" PRESS-FIT DIODE Features ! Diffused Junction ! ! ! ! Low Leakage Low Cost High Surge Current Capability Typical IR less than 10µA J D Mechanical Data ! ! ! ! ! H Case: All Copper Case and Components
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PFW5000
PFW5010
PFW5002R
PFW5010R)
DO-21
42accuracies.
Package tray
PFW5000
PFW5001
PFW5002
PFW5004
PFW5006
PFW5008
PFW5010
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB550V-30T1GG LRB550V-30T1G zApplications G eneral rectification 1 zFeatures 1 Small surface mounting type. 2) L ow V F, L ow I 2 CASE 477– 02, STYLE 1 SOD– 323 R 3) High reliability. 3) We declare that the material of product
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LRB550V-30T1GG
LRB550V-30T1G
3000/Tape
LRB550V-30T3G
10000/Tape
OD-323
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Untitled
Abstract: No abstract text available
Text: Switching Diode MMDL6050T1 1 CATHODE 2 ANODE 1 2 CASE 477–02, STYLE 1 SOD-323 MAXIMUM RATINGS Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF I FM surge Value 70 200 500 Unit Vdc mAdc mAdc Symbol PD Max 200 Unit mW R θJA
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MMDL6050T1
OD-323
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diode aa133
Abstract: AA133 diode germanium AA133 germanium diode aa133 Germanium diode AA 133 aa 133 germanium point contact diode 74947 "Point Contact Diode" 7411
Text: AA 133 Germanium-Spitzendiode Germanium point contact diode Anwendungen: Allgemein, für hohe Betriebsspannungen. Applications: General purpose, for high supply voltages. Abmessungen in mm Dimensions In mm r ' Normgehäuse Case 5 1 A 2 DIN 4 1 880 JEDEC DO 7
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AA133
diode aa133
AA133
diode germanium AA133
germanium diode aa133
Germanium diode AA 133
aa 133
germanium point contact diode
74947
"Point Contact Diode"
7411
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Untitled
Abstract: No abstract text available
Text: A d van ced po w er Te c h n o l o g y * APT30D100B 1000V 30A 1 - Cathode 2 -Anode Back of Case-Cathode ULTRAFAST SOFT R ECO V ERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATU RES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters
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APT30D100B
O-247
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2SC100
Abstract: No abstract text available
Text: Surface Mounting Device y B y Schottky Barrier Diode Single Diode OUTLINE DIMENSIONS D1FS4A Case : 1F U n ii : m m Weight : .06g ° — i37 - - K T ~ ? 40V 1.5A •^JvffiSMD • T j I 5013 • 1 £ V f = 0 .4 5V 7 r r s m / ß V '> i ß 11 +5 • S R B if i
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MG15D4GM1
Abstract: No abstract text available
Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG15D4GM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The D r ain is Isolated from Case. . U MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . L o w D r a in-Source ON Resistance
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MG15D4GM1
MG15D4GM1
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marking 5c diode
Abstract: marking M.5c diode sot-23 Marking N2
Text: MOTOROLA Order this document by MMBD7000LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode % H r -W 1 o—►hr— W—° 2 i CATHODE ANODE 3 O 1 CAT CATHODE/ANODE 2 MAXIMUM RATINGS EACH DIODE) Rating Symbol Reverse Voltage CASE 318-08, STYLE 11 SOT-23 (TO-236AB)
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MMBD7000LT1/D
OT-23
O-236AB)
marking 5c diode
marking M.5c diode
sot-23 Marking N2
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WSD400
Abstract: WSD411 h06A
Text: 1 WSD400-WSD411 S u r f a c e M o u n t S c h o ü k v H a r r i e r Diode SCHOTTK Y BARRIER R E C TIFIER S 0.5AM PERES 20-40VOLTS Features: *Low Turn-on Voltage *Fast Switching *PN Junction Guard Ring for Transient and ESD Protection MECHANICAL DATA *Case : SOT-346, Molded Plastic
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WSD400-WSD411
OT-346.
MIL-STD-202
20-40VOLTS
SC-59
SC-59
11ARACTK
WSD400
WSD411
h06A
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Untitled
Abstract: No abstract text available
Text: Surface Mounting Device y b V T & ' f Schottky Barrier Diode # — F y - o m WÆ Twin Diode OUTLINE DIMENSIONS DF40SC3L Case : STO-220 10.2 = 02 n , 30V 40A Type No. ta tte r 2.4 ±0-a 40SC3L •SM D • T j 150TC Ü r n • Ê V f = 0 .4 5 V # P 0 .1 ±fil
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DF40SC3L
STO-220
40SC3L
150TC
D00330D
00033D1
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Untitled
Abstract: No abstract text available
Text: Sensors Photointerrupter R P I-1 3 9 1 The RPI-1391 is a transmissive-type photointerrupter. The emitter is a GaAs infrared emitting diode and the detector is a silicon photo IC. A positioning pin is provided on the external case to allow precise snap-in m ounting on a
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RPI-1391
RPI-1391
76PBt
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MG160S1UK1
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG160S1UK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Collector • With Built-in • High DC is Isolated from Case Free Whee l i n g Diode C u r r e n t G a in: hpg=100 Min. (IC =1 6 0 A )
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MG160S1UK1
MG160S1UK1
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MG10Q6EK1
Abstract: darlington power transistor 10a
Text: MG10Q6EK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH P O W E R S W I T C H I N G APPLICATIONS. M O T O R C O N T R O L A P PLICATIONS. . The Collector Is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Pacakge. . With Built-in Free Wheeling Diode.
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MG10Q6EK1
MG10Q6EK1
darlington power transistor 10a
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NPN DARLINGTON POWER module isotop
Abstract: JIS h 3140 pin diagram of ic 1496 schematic diagram UPS ESMT5070DF ESMT5070DV smps&ups
Text: 3QE D H 7^2153? D 03040^1 ESMT5070DF ESMT5070DV SGS-THOMSON M S G NPN THREE STAGE DARLINGTON POWER MODULE S-THOMSON ADVANCE DATA • HIGH C U R R E N T PO W ER BIPOLAR MODULE ■ VE R Y LOW Rm JUNC TIO N CASE ■ SP ECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FR EEW HEELING DIODE
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ESMT5070DF
ESMT5070DV
ESMT5070DF
T-91-20
O-240)
NPN DARLINGTON POWER module isotop
JIS h 3140
pin diagram of ic 1496
schematic diagram UPS
ESMT5070DV
smps&ups
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Untitled
Abstract: No abstract text available
Text: V 37 h U ^ Schottky Barrier Diode —K 7 S Twin Diode •ttJfê-ïJ-âEI D25SC6MR OUTLINE DIMENSIONS Case : ITO-3P 60V 25A K i^ g a • T i 1 5 0 t; • P hrsm • r E ^ J lÆ - J L / K ffl Ü D •S R ® i • D C /D C D V A -S ' •*a , m y - A . 0AH§§
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D25SC6MR
00032S0
00032S1
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Untitled
Abstract: No abstract text available
Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG8G4GM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The D rain is Isolated from Case. . 4 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low D r a i n-Source ON Resistance
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140gr
Minu00
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300V transistor npn 15a
Abstract: MP6501 s1,3/2iv
Text: MP6501 SILICON NPN TRIPLE DIFFUSED TY PE DARLINGTON POWER TRAN SISTO R 6 IN 1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 6 Darlington Transistor are Built-in to 1 Package. . With Built-in Free Wheeling Diode.
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MP6501
300V transistor npn 15a
MP6501
s1,3/2iv
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MG75H6EL1
Abstract: No abstract text available
Text: MG75H6EL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH P O WER S W I T C H I N G APPLICATIONS. M O T O R C O N T R O L APPL ICATIONS. . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diode.
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MG75H6EL1
Tc-25`
MG75H6EL1
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hj80
Abstract: MG75G6EL9
Text: MG75G6EL9 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH P O W E R S W I T C H I N G APPLICATIONS. M O T O R C O N TROL APPLICATIONS. . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diode.
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MG75G6EL9
hj80
MG75G6EL9
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Untitled
Abstract: No abstract text available
Text: '> 3 7 K ÿ - f i - h 'i ÿ a - j b Schottky Barrier Diode Diode Module 1 D180SC3M ^ 1 OUTLINE DIMENSIONS Case : Modules 30V 180A ® i i i • * § * € ' > • a - J ly • fiV F ffl £ • * ä !S R S ig •D C /D C U V A - # • ± 1 0 V t i n —5"
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D180SC3M
-17kg
Bn307
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1N SERIES DIODE
Abstract: in 4749A 4733a zener IN 4751A 4744a 4749a 2 Watt Zener Diode in 4743a 4730A zener diode 1n
Text: Q00D5b4 1 - C E N T R A L SEMICONDUCTOR i ~ r - a - t 3 T 5% Tolerance • Case B 1 Watt Zener Diode Zener Voltage Vz@lz Test Current lz Zener Impedance Zz Volts mA Ohms '/ M ir Zener Voltage V z @ lz Test Current lz Zener Impedance Zz TYPE NO. CENTRAL TYPE NO.
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Q00D5b4
C1Z10B
C1Z11B
C1Z12B
C1Z13B
C1Z15B
C1Z16B
C1Z18B
C1Z20B
C1Z22B
1N SERIES DIODE
in 4749A
4733a zener
IN 4751A
4744a
4749a
2 Watt Zener Diode
in 4743a
4730A
zener diode 1n
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