Untitled
Abstract: No abstract text available
Text: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.
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LTC4357
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Solar Charge Controller
Abstract: 48V 100W zener diode 14v 10A mosfet solar controller FDB3632 solar panel controller p channel mosfet 100v Solar Charge Controller Circuit SMAT70A solar panel 5v
Text: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.
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LTC4357
LTC4357
LTC4350
LT4351
LTC4354
LTC4355
4357fb
Solar Charge Controller
48V 100W zener diode
14v 10A mosfet
solar controller
FDB3632
solar panel controller
p channel mosfet 100v
Solar Charge Controller Circuit
SMAT70A
solar panel 5v
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Solar Charge Controller
Abstract: LTC4357H SMAT70A FDB3632 LTC4357 LTC4357HDCB MBR10100 LT16411 ORing fet 48v 5a SBR1V15DSA
Text: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.
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LTC4357
LTC4357
LTC4350
LTC4352
LTC4354
LTC4355
4357fc
Solar Charge Controller
LTC4357H
SMAT70A
FDB3632
LTC4357HDCB
MBR10100
LT16411
ORing fet 48v 5a
SBR1V15DSA
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Untitled
Abstract: No abstract text available
Text: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.
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LTC4357
4357fb
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ltc4352iddpbf
Abstract: TRANSISTOR mosfet 9V LTC4352I LTC4352 LTC4352IMS Schottky Diode 80V 6A 12-PIN LTC4352C LTC4352CDD LTC4352IDD
Text: LTC4352 Low Voltage Ideal Diode Controller with Monitoring FEATURES DESCRIPTION n The LTC 4352 creates a near-ideal diode using an external N-channel MOSFET. It replaces a high power Schottky diode and the associated heat sink, saving power and board area. The ideal diode function permits low loss
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LTC4352
12-Pin
1TC4412HV
8V/36V,
TSOT-23
LTC4413/LTC4413-1
DFN-10
LTC4414
LTC4416/LTC4416-1
ltc4352iddpbf
TRANSISTOR mosfet 9V
LTC4352I
LTC4352
LTC4352IMS
Schottky Diode 80V 6A
LTC4352C
LTC4352CDD
LTC4352IDD
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SPL CG94
Abstract: CW laser diode 808 nm 039 opto
Text: Laser Diode on Submount 2.0 W cw Laser Diode in offener Bauform 2.0 W cw SPL CGxx Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur
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GSO06600
SPL CG94
CW laser diode 808 nm
039 opto
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Untitled
Abstract: No abstract text available
Text: Laser Diode on Submount 1.0 W cw Laser Diode in offener Bauform 1.0 W cw SPL CGxx_0 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur
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CG94
Abstract: Q62702-P1617 Q62702-P358 Q62702-P3494
Text: Laser Diode on Submount 2.0 W cw Laser Diode in offener Bauform 2.0 W cw SPL CGxx Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur
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GSOY6600
CG94
Q62702-P1617
Q62702-P358
Q62702-P3494
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CG94
Abstract: Q62702-P1617 Q62702-P358
Text: Laser Diode on Submount 2.0 W cw Laser Diode in offener Bauform 2.0 W cw SPL CGxx Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur
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GSOY6600
CG94
Q62702-P1617
Q62702-P358
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Untitled
Abstract: No abstract text available
Text: Laser Diode on Submount 2.0 W cw Laser Diode in offener Bauform 2.0 W cw SPL CG81 SPL CG94 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur
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Untitled
Abstract: No abstract text available
Text: Laser Diode on Submount 2.0 W cw Laser Diode in offener Bauform 2.0 W cw SPL CG81 SPL CG94 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur
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laser diode lifetime
Abstract: No abstract text available
Text: Notes for Operation I SAFETY / UNPACKING / HANDLING / MOUNTING / OPERATING of OSRAM Opto Semiconductors high power laser diodes in a metal package. SPL CGxx, SPL 2Yxx, SPL 2Fxx Read this instruction carefully before unpacking to avoid damage of the diode lasers. Diode
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Melles Griot 06 DLD 205
Abstract: Melles Griot Laser Diode driver Melles Griot 06 DLD Kt 812 laser diode lifetime LEA-4H Melles Griot Melles Griot diode laser US Lasers
Text: Application Note SPL CGxx for using OSRAM Opto Semiconductors high power laser diodes in open heat sink package. Read this instruction carefully before unpacking to avoid damage of the diode lasers. Diode lasers should be handled and operated by qualified personnel only!
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Untitled
Abstract: No abstract text available
Text: Laser Diode on Submount 2.0 W cw C-Mount Laser Diode in offener Bauform 2.0 W cw (C-Mount) SPL CG98 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Zuverlässige InGa(Al)As kompressiv verspannte Quantenfilm-Struktur
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SPL CG65
Abstract: No abstract text available
Text: Red Laser Diode on Submount 0.5 W cw Rote Laser Diode in offener Bauform 0.5 W cw SPL CG65 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrichbetrieb • Zuverlässige kompressiv verspannte InGaP Quantenfilm-Struktur • Laterale Austrittsöffnung 100 µm
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GSOY6600
Abstract: Radiation Assured Devices SPL CG65
Text: Red Laser Diode on Submount 0.5 W cw Rote Laser Diode in offener Bauform 0.5 W cw SPL CG65 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrichbetrieb • Zuverlässige kompressiv verspannte InGaP Quantenfilm-Struktur • Laterale Austrittsöffnung 100 µm
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Untitled
Abstract: No abstract text available
Text: Laser Diode on Submount 2.0 W cw C-Mount Laser Diode in offener Bauform 2.0 W cw (C-Mount) SPL CG98 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Zuverlässige InGa(Al)As kompressiv verspannte Quantenfilm-Struktur
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CG94-2S
Abstract: CG94 SPL CG94 GSOY6600
Text: Laser Diode on Submount 2.0 W cw C-Mount Laser Diode in offener Bauform 2.0 W cw (C-Mount) SPL CG94-2S Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Zuverlässige InGa(Al)As kompressiv verspannte Quantenfilm-Struktur
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CG94-2S
CG94-2S
CG94
SPL CG94
GSOY6600
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Untitled
Abstract: No abstract text available
Text: Laser Diode on Submount 2.0 W cw C-Mount Laser Diode in offener Bauform 2.0 W cw (C-Mount) SPL CG94-2S Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Zuverlässige InGa(Al)As kompressiv verspannte Quantenfilm-Struktur
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SPL CG81-2S
Abstract: CG81-2S SPL CG81 GSOY6600
Text: Laser Diode on Submount 2.0 W cw C-Mount Laser Diode in offener Bauform 2.0 W cw (C-Mount) SPL CG81-2S Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Zuverlässige InGa(Al)As kompressiv verspannte Quantenfilm-Struktur
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CG81-2S
SPL CG81-2S
CG81-2S
SPL CG81
GSOY6600
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Untitled
Abstract: No abstract text available
Text: Laser Diode on Submount 2.0 W cw C-Mount Laser Diode in offener Bauform 2.0 W cw (C-Mount) SPL CG94-2S Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Zuverlässige InGa(Al)As kompressiv verspannte Quantenfilm-Struktur
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diode cross reference
Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE
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MA40401
MA40402
MA40404
MA40405
MA40406
MA40408
diode cross reference
schottky diode cross reference
MV3110
AH513
AH761
AH512
impatt diode
Gunn Diode
AH370
DMK-6606
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EBF83
Abstract: EN50011 Scans-0017839 CD2A battery operated cdi 2235S
Text: PH ILIPS EBF83 DOUBLE-DIODE PENTODE for use as I.F. amplifier, detector and A.G.C. diode in carradio sets. The tube can be directly operated from a 6 V or 12 V storage battery DOUBLE-DIODE PENTHODE pour l'utilisation comme amplificateur MF, comme détecteur et corne diode de C.A.V. dans récepteurs
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EBF83
7R05998
7R05S99
EBF83
EN50011
Scans-0017839
CD2A
battery operated cdi
2235S
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en2617b
Abstract: No abstract text available
Text: Ordering number:EN2617B _ SVC342 Diffused Junction Type Silicon Diode V aractor Diode for AM Receiver Electronic T uning Use Features •Twin type varactor diode for low-voltage A M electronic tuning use. •High capacitance ratio. •Excellent linearity of C-V characteristic.
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EN2617B
SVC342
en2617b
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