Diode - Quad, Fast Switching
Abstract: No abstract text available
Text: CMEDA-6i SURFACE MOUNT MONOLITHIC, ISOLATED SILICON QUAD SWITCHING DIODE ARRAY w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMEDA-6i is an isolated, monolithic silicon quad switching diode array and epoxy molded in an SOT-28 surface
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OT-28
Diode - Quad, Fast Switching
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Untitled
Abstract: No abstract text available
Text: CMEDA-6i SURFACE MOUNT MONOLITHIC, ISOLATED SILICON QUAD SWITCHING DIODE ARRAY w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMEDA-6i is an isolated, monolithic silicon quad switching diode array and epoxy molded in an SOT-28 surface
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OT-28
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CPD74
Abstract: No abstract text available
Text: PROCESS CPD74 Switching Diode Monolithic Isolated Quad Switching Diode Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Anode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS Cathode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS Top Side Metalization
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CPD74
28-August
CPD74
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CPD74
Abstract: No abstract text available
Text: PROCESS CPD74 Switching Diode Monolithic Isolated Quad Switching Diode Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Anode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS Cathode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS Top Side Metalization
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CPD74
22-March
CPD74
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CPD74
Abstract: No abstract text available
Text: Central PROCESS TM Semiconductor Corp. CPD74 Switching Diode Monolithic Isolated Quad Switching Diode Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Anode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS Cathode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS
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CPD74
CPD74
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PROTEK SO-8 DEVICE MARKING
Abstract: No abstract text available
Text: 05098 PSRDA70-4 Only One Name Means ProTek’Tion ultra low capacitance steering diode array Description The PSRDA70-4 is an ultra low capacitance steering diode array designed to protect circuit applications from the effects of Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Its ultra low capacitance allows maintenance
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PSRDA70-4
PSRDA70-4
61000t
PROTEK SO-8 DEVICE MARKING
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Untitled
Abstract: No abstract text available
Text: 05098 PSRDA70-4 Only One Name Means ProTek’Tion ultra low capacitance steering diode array Description The PSRDA70-4 is an ultra low capacitance steering diode array designed to protect circuit applications from the effects of Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Its ultra low capacitance allows maintenance
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PSRDA70-4
PSRDA70-4
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psrda70
Abstract: PSRDA70-4
Text: 05098 PSRDA70-4 Only One Name Means ProTek’Tion ultra low capacitance steering diode array Description The PSRDA70-4 is an ultra low capacitance steering diode array designed to protect circuit applications from the effects of Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Its ultra low capacitance allows maintenance
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PSRDA70-4
PSRDA70-4
psrda70
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PSRDA70-4
Abstract: 61000-4-5 surge
Text: 05098 PSRDA70-4 Only One Name Means ProTek’Tion ultra low capacitance steering diode array Description The PSRDA70-4 is an ultra low capacitance steering diode array designed to protect circuit applications from the effects of Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Its ultra low capacitance allows maintenance
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PSRDA70-4
PSRDA70-4
61000-4-5 surge
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tunnel diode
Abstract: lm719 IN3717 tunnel diode application 1N3717 1N2719 1N3719 TUNNEL DIODE d 220 1N3713 1N3715
Text: I — fdlL-s-19500/269 NAVT IC2ctcber 196S bDLfTARV SPECIPfCATION SEMfC0NDUCT05f TYPES DEVICE, 1N3719, 1N3715, TuKNEL 1N3717, DIODE, 1N3719 AND 1N3721 . 1. SCOPE 1.1 Description. - TMsspecification cmer8tie deWlrquirements MIL-S-1 8500, except as otherwise
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fdlL-s-19500/269
SEMfC0NDUCT05f
1N3719,
1N3715,
1N3717,
1N3719
1N3721
1NS71
KSL-S-1950CV269
MIL-s-19500/269
tunnel diode
lm719
IN3717
tunnel diode application
1N3717
1N2719
TUNNEL DIODE d 220
1N3713
1N3715
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"Varactor Diode"
Abstract: BXY32 varactor diode X-band x5 frequency multiplier
Text: BXY32 SILICON PLANAR EPITAXIAL VARACTOR DIODE T E N T A T IV E D A TA Silicon planar epitaxial varactor diode exhibiting step recovery characteristics, especially suitable for high order frequency multiplier circuits up to X-band output frequency. It is a diffused silicon device and is mounted in a small double-ended ceram ic-m etal
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OCR Scan
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BXY32
10GHz
to-04
1-70-nom
BXY32
"Varactor Diode"
varactor diode X-band
x5 frequency multiplier
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CMEDA-61
Abstract: No abstract text available
Text: Central CMEDA-6Ì SURFACE MOUNT SUPERmini MONOLITHIC, ISOLATED SILICON QUAD SWITCHING DIODE ARRAY Semiconductor Corp. FEATURES: • Four Monolithic Isolated diodes. • Fast Switching. • Matched Vp DESCRIPTION: The CENTRAL SEMICONDUCTOR CMEDA-6i is an
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OCR Scan
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OT-28
CPD74)
18-February
CMEDA-61
OT-28
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SOT-28
Abstract: marking code 18 surface mount diode
Text: CMEDA-6i SURFACE MOUNT SUPERmini MONOLITHIC, ISOLATED SILICON QUAD SWITCHING DIODE ARRAY Central TM Semiconductor Corp. FEATURES: • Four Monolithic Isolated diodes. • Fast Switching. • Matched VF SOT-28 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMEDA-6i is an
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OT-28
18-February
SOT-28
marking code 18 surface mount diode
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Diodes
Abstract: RF Diode Design Guide
Text: RF Diode Design Guide Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high reliability analog and mixed signal semiconductors. Leveraging core technologies, Skyworks offers diverse standard and custom linear products supporting automotive, broadband, cellular infrastructure, energy management,
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eng508
BRO389-11B
Diodes
RF Diode Design Guide
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Measurement of stray inductance for IGBT
Abstract: Hitachi DSA00281
Text: IGBT MODULE Spec.No.IGBT-SP-04023 R2 P1 MBN1800E17DD Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module due to LiPT Trench Technology ∗ Low noise due to ultra soft fast recovery diode. U-SFD ∗ High reverse recovery capability (HiRC)
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IGBT-SP-04023
MBN1800E17DD
000cycles)
Measurement of stray inductance for IGBT
Hitachi DSA00281
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-04023 R3 P1 MBN1800E17DD Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module due to LiPT Trench Technology ∗ Low noise due to ultra soft fast recovery diode. U-SFD ∗ High reverse recovery capability (HiRC)
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IGBT-SP-04023
MBN1800E17DD
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-12010 R1 MBM200H45E2-H P1 Preliminary Specification Silicon N-channel IGBT 4500V E2 version FEATURES Low switching loss IGBT module. Low noise due to ultra soft fast recovery diode. Isolated heat sink terminal to base .
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IGBT-SP-12010
MBM200H45E2-H
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G15BB
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-09025 R5 P1 MBN500H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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IGBT-SP-09025
MBN500H65E2
000cycles)
G15BB
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diode byx 64 600
Abstract: MBN2400E17D
Text: IGBT MODULE Spec.No.IGBT-SP-02007 R7 MBN2400E17D Silicon N-channel IGBT 1. FEATURES ∗ High speed, low loss IGBT module due to LiPT Trench Technology ∗ Low noise due to ultra soft fast recovery diode. U-SFD ∗ High reverse recovery capability (HiRC)
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IGBT-SP-02007
MBN2400E17D
000cycles)
diode byx 64 600
MBN2400E17D
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-09025 R3 MBN500H65E2 P1 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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IGBT-SP-09025
MBN500H65E2
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-04010R6 MBM600E17D Silicon N-channel IGBT FEATURES High speed, low loss IGBT module. Low driving power due to low input capacitance MOS gate. Low noise due to ultra soft fast recovery diode. High reliability, high durability module.
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IGBT-SP-04010R6
MBM600E17D
000cycles)
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Untitled
Abstract: No abstract text available
Text: Spec.No.IGBT-SP-06020R1 P1 IGBT MODULE MBN1800E17E Silicon N-channel IGBT 1. FEATURES ∗ Low noise, low loss IGBT module due to soft-LiPT Trench Technology ∗ Low noise due to ultra soft fast recovery diode. U-SFD ∗ High reverse recovery capability (HiRC)
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IGBT-SP-06020R1
MBN1800E17E
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-09025 R4 MBN500H65E2 P1 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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IGBT-SP-09025
MBN500H65E2
000cycles)
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