Untitled
Abstract: No abstract text available
Text: 5082-1346 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.820f C1/C2 Min. Capacitance Ratio4.0 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2.5k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B
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Voltage45
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BAV99LT1
Abstract: a7 surface mount diode bav99LT1a7
Text: BAV99LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA DUAL SURFACE MOUNT SWITCHING DIODE * Fast Switching Speed * High Conductance * Surface Mount Package Ideally Suited for Automatic Insertion ABSOLUTE MAXIMUM RATINGS at T=25℃
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BAV99LT1
OT-23
BAV99LT1
a7 surface mount diode
bav99LT1a7
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m5c diode
Abstract: No abstract text available
Text: SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd MMBD7000LT1 TECHNICAL DATA GENERAL-PURPOSE SIGNAL AND SWITCHING DIODE Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Reverse Voltage VR 100 Vdc Forward Current
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MMBD7000LT1
OT-23
062in
100uAdc)
50Vdc
m5c diode
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mmbd6050lt1
Abstract: No abstract text available
Text: MMBD6050LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA MONOLITHIC DUAL SWITCHING DIODE Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Reverse Voltage VR 70 Vdc Forward Current IF 200
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MMBD6050LT1
OT-23
100uAdc)
50Vdc)
mmbd6050lt1
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5bm Marking
Abstract: No abstract text available
Text: MMBD6100LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA DUAL SURFACE MOUNT SWITCHING DIODE * Fast Switching Speed * High Conductance * Surface Mount Package Ideally Suited for Automatic Insertion Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at T=25℃
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MMBD6100LT1
OT-23
5bm Marking
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA MMBD914LT1 HIGH-SPEED SWITCHING DIODE Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc
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MMBD914LT1
OT-23
100uAdc)
20Vdc)
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA BAW56LT1 DUAL SURFACE MOUNT SWITCHING DIODE Fast Switching Speed High Conductance Surface Mount Package Ideally Suited for Package:SOT-23 Automatic Insertion ABSOLUTE MAXIMUM RATINGS at Ta=25℃
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BAW56LT1
OT-23
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BAS16LT1
Abstract: No abstract text available
Text: BAS16LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * TECHNICAL DATA SURFACE MOUNT SWITCHING DIODE Ultra Fast Switching Speed Package:SOT-23 Surface Mount Package Ideally Suited For Automatic Insertion * High Conductance ABSOLUTE MAXIMUM RATINGS at Ta=25℃
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BAS16LT1
OT-23
BAS16LT1
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mmbd2836
Abstract: No abstract text available
Text: MMBD2835/6LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA MONOLITHIC DUAL SWITCHING DIODE Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit 2835 2836 Reverse Voltage VR 35 75 Vdc Forward Current
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MMBD2835/6LT1
OT-23
100uAdc)
MMBD2835
MMBD2836
mmbd2836
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B6 DIODE schottky
Abstract: kl3 diode 2025v
Text: BAT54R/A/C/SLT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA SCHOTTKY BARRIER DIODE ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Reverse Voltage VR Forward Power Dissipation PF Rating @TA=25℃ Derate above 25℃
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BAT54R/A/C/SLT1
OT-23
10uAdc)
10mAdc
30mAdc
B6 DIODE schottky
kl3 diode
2025v
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Untitled
Abstract: No abstract text available
Text: MMBD2837/8LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA MONOLITHIC DUAL SWITCHING DIODE Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Rating Characteristic Symbol 2837 2838 Unit Reverse Voltage VR 35 50 Vdc Peak Reverse Voltage
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MMBD2837/8LT1
OT-23
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T161-160
Abstract: SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100
Text: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing phase control thyristors, rectifier diodes, high frequency thyristors, fast recovery diode and fast switching thyristors along with about 300 components.
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ISO9001
to300
SF15CL
500Aelement
T161-160
SCR T161-160
t153-630
KP25A
T123-250
tc171
ZP50A
T143-630 SCR
KP200A
T151-100
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m5c diode
Abstract: MMBD7000 103 m5c
Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBD7000 Features • • • Low Current Leakage Low Cost Small Outline Surface Mount Package 350mW 100Volt Dual Switching Diode C/A Pin Configuration Top View M5C A
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MMBD7000
350mW
100Volt
OT-23
357K/W
Ju018
m5c diode
MMBD7000
103 m5c
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UH277 LINEAR INTEGRATED CIRCUIT COMPLEMENTARY OUTPUTS HALL EFFECT LATCH IC DESCRIPTION The UTC UH277 is a Latch-Type Hall Effect sensor with built-in complementary output drivers. It’s designed with internal temperature compensation circuit and built-in protection diode prevent reverse
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UH277
UH277
QW-R118-003
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Untitled
Abstract: No abstract text available
Text: SANGDEST MICROELECTRONICS SDURB D 820 Technical Data Data Sheet N1252, Rev. - Green Products SDURB/D820 ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode
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N1252,
SDURB/D820
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XL4004
Abstract: XL400
Text: BXL4004 Ordering number : EN9050 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BXL4004 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=3mΩ (typ.) 4.5V drive • Input capacitance Ciss=8200pF (typ.) Specifications
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EN9050
BXL4004
8200pF
PW10s,
XL4004
XL400
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BXL4004
Abstract: No abstract text available
Text: BXL4004 Ordering number : EN9050A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BXL4004 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=3mΩ (typ.) 4.5V drive • Input capacitance Ciss=8200pF (typ.) Specifications
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EN9050A
BXL4004
8200pF
PW10s,
BXL4004
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MPN3412
Abstract: MPN3411
Text: MPN3411 SILICON PIN ATTENUATOR DIODE SILICON PIN ATTENUATOR DIODE . . . designed prim arily as a general purpose attenuator diode. S u p plied in pop ular iow -inductance, M in i-L plastic package fo r low cost, high-volum e co n su m e r a n d industrial requirem ents.
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MPN3411
MPN3412
MPN3411
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germanium
Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Text: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014
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I815/KTN
10I5/KTP
1923/KTN
380TM/KTN
germanium
kia 7208
KIA 7313
germanium transistor
speaker protector
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PDF
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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PDF
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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OCR Scan
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Untitled
Abstract: No abstract text available
Text: DIXYS IXSK 35N120AU1 High Voltage IGBT with Diode VCES I C25 vCE sat 1200 V 70 A 4V Short Circuit SOA Capability Prelim inary data Symbol Test C onditions V CES ^ V cO R Tj = 25° C to 150° C; Rge = 1 MC2 VGES v GEM Continuous +20 V Transient ±30 V ^C25
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35N120AU1
to150
O-264AA
JEDECTO-264AA
35N120AU1
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PDF
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Untitled
Abstract: No abstract text available
Text: HE8404SG-GaAIAs Infrared Emitting Diode Description The HE8404SG is a GaAIAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features • High efficiency, high output
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HE8404SG---GaAIAs
HE8404SG
HE8404SG
HE8404SG_
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