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    DIODE CODE YW Search Results

    DIODE CODE YW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE CODE YW Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


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    1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m PDF

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


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    1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p PDF

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE PDF

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23 PDF

    mosfet vth 5v

    Abstract: Dual N-Channel MOSFET sot-363 n-channel mosfet SSN2N7002C Dual Enhancement Mode MOSFET
    Text: SSN2N7002C Dual Enhancement Mode MOSFET Product Summary N-Channel VDS (V) SOT-363 RDS(ON) (Ω) Max 6 3.0 @VGS = 10V 0.120A 1 Product Summary (P-Channel) ID (A) -60V -0.130A 4 YW 4.0 @VGS = 4.5V VDS (V) 5 2C 60V ID (A) 2 3 RDS(ON) (Ω) Max D1 (6) 7.5 @VGS = 10V


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    SSN2N7002C OT-363 OT-363 mosfet vth 5v Dual N-Channel MOSFET sot-363 n-channel mosfet SSN2N7002C Dual Enhancement Mode MOSFET PDF

    8205 sot-23-6

    Abstract: Dual N-Channel MOSFET 8205 8205 A mosfet SSS8205 8205 dual mosfet 8205 mosfet 8205 sot 23-6 8205 A 8205 datasheet 8205
    Text: SSS8205 Dual N-Channel Enhancement Mode MOSFET Product Summary ID A RDS(ON) (m ) Max 05 YW 25 @VGS = 4.5V 5A 18V 82 VDS (V) TSOP-6 (SOT-23-6) 1 45 @VGS = 2.5V D1 (2, 5) D2 (2, 5) FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable.


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    SSS8205 OT-23-6) 8205 sot-23-6 Dual N-Channel MOSFET 8205 8205 A mosfet SSS8205 8205 dual mosfet 8205 mosfet 8205 sot 23-6 8205 A 8205 datasheet 8205 PDF

    marking 8206

    Abstract: RT 8206 sot-23-6 marking code "MARKING CODE G2" MARKING CODE G2
    Text: SSS8206 Dual N-Channel Enhancement Mode MOSFET Product Summary ID A RDS(ON) (m ) Max 06 YW 20 @VGS = 4.5V 5.5A 16V 82 VDS (V) TSOP-6 (SOT-23-6) 1 35 @VGS = 2.5V D1 (2, 5) D2 (2, 5) FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable.


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    SSS8206 OT-23-6) marking 8206 RT 8206 sot-23-6 marking code "MARKING CODE G2" MARKING CODE G2 PDF

    Dual N-Channel mosfet sot-363

    Abstract: diode 66a SSN1902 sot-363 n-channel mosfet 66a Diodes Dual N-Channel MOSFET
    Text: SSN1902 Dual N-Channel Enhancement Mode MOSFET Product Summary SOT-363 6 RDS ON (mΩ) Max ID (A) 4 YW 385 @VGS = 4.5V 1 0.7A 20V 5 19 VDS (V) 2 630 @VGS = 2.5V 3 D1 (6) D2 (3) FEATURES ◆ Super high dense cell design for low RDS(ON). ◆ Rugged and reliable.


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    SSN1902 OT-363 OT-363 Code19 Dual N-Channel mosfet sot-363 diode 66a SSN1902 sot-363 n-channel mosfet 66a Diodes Dual N-Channel MOSFET PDF

    tjm sot23

    Abstract: sss0610
    Text: SSS0610 P-Channel Enhancement Mode MOSFET Product Summary ID A -60V -0.185A RDS(ON) ( ) Max 10 06 VDS (V) SOT-23 D YW 7.5 @VGS = 10V G 10.0 @VGS = 4.5V S D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G SOT-23 package. Pb Free.


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    SSS0610 OT-23 OT-23 tjm sot23 sss0610 PDF

    LOW FORWARD VOLTAGE DROP DIODE RECTIFIER

    Abstract: freewheeling diode 5A
    Text: SDB1090DI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current  Low power loss and High efficiency  High surge capability  Dual common cathode rectifier Pin Configuration Pin 1, 3: Anode


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    SDB1090DI O-252 SDB1090DI KSD-D6O009-002 LOW FORWARD VOLTAGE DROP DIODE RECTIFIER freewheeling diode 5A PDF

    Untitled

    Abstract: No abstract text available
    Text: SDB1060DI Semiconductor Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features 2  Low forward voltage drop and leakage current  Low power loss and High efficiency  High surge capability 1  Dual common cathode rectifier 123  Full lead Pb -free and RoHS compliant device


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    SDB1060DI O-252 SDB1060DI KSD-D6O008-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: SDB10150DI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current 1 2, 4  Low power loss and High efficiency  High surge capability 3  Dual common cathode rectifier Pin Configuration


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    SDB10150DI O-252 SDB10150DI KSD-D6O013-002 PDF

    Untitled

    Abstract: No abstract text available
    Text: SDB1060DI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current 1 2, 4  Low power loss and High efficiency  High surge capability 3  Dual common cathode rectifier Pin Configuration


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    SDB1060DI O-252 SDB1060DI KSD-D6O008-004 PDF

    SDB10150DI

    Abstract: 5A schottky
    Text: SDB10150DI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current  Low power loss and High efficiency  High surge capability  Dual common cathode rectifier Pin Configuration Pin 1, 3: Anode


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    SDB10150DI O-252 SDB10150DI KSD-D6O013-001 5A schottky PDF

    Untitled

    Abstract: No abstract text available
    Text: SDB1090DI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current 1 2, 4  Low power loss and High efficiency  High surge capability 3  Dual common cathode rectifier Pin Configuration


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    SDB1090DI O-252 SDB1090DI KSD-D6O009-003 PDF

    Untitled

    Abstract: No abstract text available
    Text: SDB1090DI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current 1 2, 4  Low power loss and High efficiency  High surge capability 3  Dual common cathode rectifier Pin Configuration


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    SDB1090DI O-252 SDB1090DI KSD-D6O009-003 PDF

    SDB10150

    Abstract: No abstract text available
    Text: SDB10150DI Semiconductor Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features y Low forward voltage drop and leakage current y Low power loss and High efficiency y High surge capability 1 y Dual common cathode rectifier 123 y Halogen-free component and RoHS compliant device


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    SDB10150DI O-252 SDB10150DI KSD-D6O013-000 SDB10150 PDF

    252 DIODE

    Abstract: No abstract text available
    Text: SDB10100DI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current  Low power loss and High efficiency  High surge capability  Dual common cathode rectifier Pin Configuration Pin 1, 3: Anode


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    SDB10100DI O-252 SDB10100DI KSD-D6O012-001 252 DIODE PDF

    SDB10200

    Abstract: sdb10200di
    Text: SDB10200DI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current  Low power loss and High efficiency  High surge capability  Dual common cathode rectifier Pin Configuration Pin 1, 3: Anode


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    SDB10200DI O-252 SDB10200DI KSD-D6O018-001 SDB10200 PDF

    Untitled

    Abstract: No abstract text available
    Text: SDB10200DI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current 1 2, 4  Low power loss and High efficiency  High surge capability 3  Dual common cathode rectifier Pin Configuration


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    SDB10200DI O-252 SDB10200DI KSD-D6O018-002 PDF

    SDB1060DI

    Abstract: No abstract text available
    Text: SDB1060DI Semiconductor Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features 2  Low forward voltage drop and leakage current  Low power loss and High efficiency  High surge capability 1  Dual common cathode rectifier 123  Full lead Pb -free and RoHS compliant device


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    SDB1060DI O-252 SDB1060DI KSD-D6O008-002 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 380 SIPMOS Power Transistor • N channel • Enhancement mode ' • FR ED FET fé YW5S 3 Pin 1 Pin 2 Type BUZ 380 Vfes 1000 V b flbsfon 2w 5.5 A Pin 3 D G S Package Ordering Code TO-218AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Drain source voltage


    OCR Scan
    O-218AA C67078-A3205-A2 flS35bOS 235b05 623SbGS PDF

    Untitled

    Abstract: No abstract text available
    Text: 10 yw\ National Jut Semiconductor <D 54F/74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The 'F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini­ mise loading and are fully decoded on-chip. The outputs are


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    54F/74F219 64-Bit 16-word PDF

    F0D2741

    Abstract: QTC 4N25 QTC 4502 MOC 4N25 F0D2711 GENERAL SEMICONDUCTOR diodes marking code rq diodo detector HCPL-2501 E90700 qtc 6n139
    Text: 1655 Scott Blvd Santa Clara, CA 95050-4169 408 985-2400 FAX No. (408) 296-3256 Underwriters Laboratories Inc. File E90700 Issusd Revised Vol 11/17/1998 10/30/2001 FOLLOW-UP SERVICE PROCEDURE (TYPE R) COMPONENT Manufacturer : (621133-001) Applicant : (725625-001)


    OCR Scan
    E90700 FOD27X2Y HCPL-05XX HCPL-04XX HCPL-07XX HCPL-06XX FOD050L FOD053L HCPL-0530 HCPL-0531 F0D2741 QTC 4N25 QTC 4502 MOC 4N25 F0D2711 GENERAL SEMICONDUCTOR diodes marking code rq diodo detector HCPL-2501 E90700 qtc 6n139 PDF