d08s60
Abstract: diode 8a 600v
Text: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery
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SDT08S60
PG-TO220-2-2.
Q67040S4647
D08S60
d08s60
diode 8a 600v
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Schottky diode TO220
Abstract: Q67040S4647 SDT08S60 D08S60
Text: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery
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SDT08S60
PG-TO220-2-2.
D08S60
Q67040S4647
PG-TO-220-2-2
Schottky diode TO220
Q67040S4647
SDT08S60
D08S60
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Schottky diode TO220
Abstract: SDT08S60 6260 thermal infineon 6260 Single Schottky diode TO-220 Q67040S4647
Text: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery
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SDT08S60
P-TO220-2-2.
D08S60
Q67040S4647
Schottky diode TO220
SDT08S60
6260 thermal
infineon 6260
Single Schottky diode TO-220
Q67040S4647
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Untitled
Abstract: No abstract text available
Text: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery
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SDT08S60
PG-TO220-2-2.
Q67040S4647
D08S60
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D0865C5
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH08G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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IDH08G65C5
D0865C5
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D0865C5
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH08G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH08G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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IDH08G65C5
650es
D0865C5
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH08G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH08G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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IDH08G65C5
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK08G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK08G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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IDK08G65C5
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Ge ner ation thin Q! T M 650V SiC Schottky Diode IDL08G65C5 Final Da ta Sh eet Rev. 2.0, 2013-12-05 Po wer Ma nage m ent & M ulti m ark et 5th Generation thinQ! SiC Schottky Diode 1 IDL08G65C5 ThinPAK 8x8 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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IDL08G65C5
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY DIODE ARRAY ISSU E 1 - AUGUST 1996 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • Reduced reflection noise The device helps suppress transients caused
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SDA32
DIL20
200mA
SDA32
DIL20
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY DIODE ARRAY ISSUE 2 - JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parailei data lines. • Reduced reflection noise • Repetitive peak forw ard current • 200mA
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SDA32
200mA
DIL20
SDA32
SDA32N20
SDA32D20
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Untitled
Abstract: No abstract text available
Text: SV10 M ITEL Rectifier Diode SEMICONDUCTOR DS4084 - 2.3 Supersedes Septem ber 1995 version, DS4064 - 2.2 KEY PARAMETERS V RRM 2500V 180A Jf AV 2200A FSM APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. March 1998
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DS4084
DS4064
20UNF
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LIC AGENTS DATA
Abstract: No abstract text available
Text: SV20 M ITEL Rectifier Diode SEMICONDUCTOR DS4085 - 2.3 Supersedes Septem ber 1995 version, DS4085 - 2.2 KEY PARAMETERS V RRM 2000V 220A Jf AV 4000A FSM APPLICATIONS • R ectification. ■ Freewheel Diode. ■ DC M otor C ontrol. ■ Pow er Supplies.
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DS4085
20UNF
LIC AGENTS DATA
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PDF
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Untitled
Abstract: No abstract text available
Text: SV20 M ITEL Rectifier Diode SEMICONDUCTOR DS4085 - 2.3 Supersedes Septem ber 1995 version, DS4085 - 2.2 KEY PARAMETERS VR R M 2000V 220A J A V 4000A FSM APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. March 1998
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DS4085
20UNF
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25FMR
Abstract: No abstract text available
Text: MITEL SV05.F Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4144 - 3.3 DS4144 - 3.4 March 1998 KEY PARAMETERS V RRM 2500V 145A Jf AV 2500A FSM 150(lC Q, APPLICATIONS • Induction Heating. ■ A.C. M otor Drives. ■ S nubber Diode.
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DS4144
SV0524FM
SV0520FM
25FMR
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Untitled
Abstract: No abstract text available
Text: MITEL SV15.F Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4209 - 2.1 DS4209 - 2.2 APPLICATIONS March 1998 KEY PARAMETERS v RRM 1600V 205A Jf AV 3000A FSM 35|lC Q r • Induction Heating. ■ A.C. M otor Drives. ■ S nubber Diode.
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DS4209
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dil16
Abstract: DIL16-package diode d07 49 schematic with a schottky diode SDA24 SDA24D16 SDA24N16 DSA003653
Text: SCHOTTKY DIODE ARRAY SDA24 ISSUE 3 – JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA24 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • • The device helps suppress transients caused by transmission line reflections, cross talk and
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SDA24
SDA24
200mA
DIL16
DIL16
SDA24D16
DIL16-package
diode d07 49
schematic with a schottky diode
SDA24D16
SDA24N16
DSA003653
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SDA32N20
Abstract: DIL-20 DIL20 SDA32 SDA32D20 SO20 DSA003654
Text: SCHOTTKY DIODE ARRAY SDA32 ISSUE 2 – JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • • The device helps suppress transients caused by transmission line reflections, cross talk and
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SDA32
SDA32
200mA
DIL20
DIL20
SDA32N20
SDA32N20
DIL-20
SDA32D20
SO20
DSA003654
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Untitled
Abstract: No abstract text available
Text: SV15.F MITEL Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4209 - 2.1 DS4209 - 2.2 APPLICATIONS • KEY PARAMETERS V RRM 1600V 205A Jf AV 3000A FSM 35|iC Q r 3.2|is t rr Induction Heating. ■ A.C. Motor Drives. ■ Snubber Diode.
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DS4209
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PDF
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Untitled
Abstract: No abstract text available
Text: SV05.F M ITEL Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4144 - 3.3 DS4144 - 3.4 KEY PARAMETERS V RRM 2500V 145A Jf AV 2500A FSM 150(lC Q, 2.2|is APPLICATIONS • March 1998 Induction Heating. ■ A.C. Motor Drives. ■ Snubber Diode.
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DS4144
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DIODE N20
Abstract: SD Series
Text: Section 9: Integrated Circuits S ch o ttky Diode A rra y Series SD A S e rie s The SDA Schottky Barrier Diode Array series is designed to reduce reflection noise on high speed parallel data lines. This helps suppress transients caused by transm ission line
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SDA12,
SDA12
SDA24
SDA32
SDA16D24
S016/DIL16
N16/D16
S020/DIL20
N20/D20
SDA12
DIODE N20
SD Series
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TSC5304D
Abstract: TSC5304DCH TSC5304DCP power transistor Ic 4A NPN to - 251
Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304D
O-251
O-252
TSC5304D
TSC5304DCH
TSC5304DCP
power transistor Ic 4A NPN to - 251
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Untitled
Abstract: No abstract text available
Text: GEC P L E S S E Y 'SÊt JANUARY1996 SEMI CO NDUC TOR S DS4209-2.1 SV15.F FAST RECOVERY DIODE KEY PARAMETERS v RRM 1600V 205A | f AV 3000A FSM 35|iC Q r 3.2|is *n APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ Snubber Diode. ■ Welding.
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JANUARY1996
DS4209-2
SV1516F
SV1514F
SV1512F
SV1510F
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kp50a
Abstract: kp20a ZP200A KP300A KP200A ZP300A kp5a ZP20A zp5a KP100a
Text: Ü t t S M M W M I# Stud Version Semiconductor STANDARD RECOVERY DIODE Stud Version FAST RECOVERY DIODE (Stud Version) M ' °r & É (« IÊ 3 £ ) PHASE CONTROL THYRISTOR (Stud Version) TRIAC THYRISTOR (Stud Version) t i& R T & ä H K K A ) FAST THYRISTOR (Stud Version)
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ZLKP100A
ZLKP150A
ZLKP200A
ZLKP250A
ZLKP300A
kp50a
kp20a
ZP200A
KP300A
KP200A
ZP300A
kp5a
ZP20A
zp5a
KP100a
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