IDW40G120C5B
Abstract: No abstract text available
Text: Silicon Carbide Schottky Diode IDW40G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW40G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1
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IDW40G120C5B
IDW40G120C5B
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Untitled
Abstract: No abstract text available
Text: D405-120 Features • Device: • Power: • Package Type: • PIN configuration ● 405nm 120mW laser diode● 405nm laser diode 120mW 5.6mm TO Style B ▪ Absolute Maximum Rating Tc=25°C Characteristics Symbols Optical power Reverse Voltage (Laser) Reverse Voltage (PIN)
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D405-120
405nm
120mW
120mW
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diode D405
Abstract: No abstract text available
Text: D405-20 Features • Device: • Power: • Package Type: • PIN configuration ● 405nm 20mW laser diode● 405nm laser diode 20mW 5.6mm TO Style B ▪ Absolute Maximum Rating Tc=25°C Characteristics Symbols Optical power Reverse Voltage (Laser) Reverse Voltage (PIN)
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D405-20
405nm
diode D405
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IDW40G65C5
Abstract: D4065C5
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW40G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW40G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for
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IDW40G65C5
IDW40G65C5
D4065C5
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW40G65C5 Final Datasheet Rev. 2.2, 2013-01-15 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW40G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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IDW40G65C5
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Untitled
Abstract: No abstract text available
Text: RM400HA-24S Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Super Fast Recovery Single Diode Module 400 Amperes/1200 Volts Description: Powerex Super-Fast Recovery Single Diode Modules are designed for use in applications
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RM400HA-24S
Amperes/1200
125oC
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FAST RECOVERY DIODE
Abstract: D-40 RM400HA-24S RM400HA24S
Text: RM400HA-24S Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Super Fast Recovery Single Diode Module 400 Amperes/1200 Volts Description: Powerex Super-Fast Recovery Single Diode Modules are designed for use in applications
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RM400HA-24S
Amperes/1200
125oC
FAST RECOVERY DIODE
D-40
RM400HA-24S
RM400HA24S
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DDB6U75N16YR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !32C5C 36"#$ 6%1C3B 1322 14BBFB &' 6 6*+
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DDB6U75N16YR
14BBFB
06123B
F223B
6043C0F0613265C
3269F
6123B
043C0F06
06123B
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Diode LT 5333
Abstract: D-73277 f9250
Text: AS2701 ASI Slave IC DATA SHEET Key Features General Description • • • The signal transmission between the master and the slaves in the ASI system is performed by a parallel two-line wire ASI-line to which the IC is connected only via a polarity protection diode and a suppressor diode. The line is
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AS2701
trans75
Diode LT 5333
D-73277
f9250
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Untitled
Abstract: No abstract text available
Text: D40K4 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode Array, Integrat. Page 2 of 4 You are Here: Home Home Information Spec D40K4 Availability Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Products Search for Parts
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D40K4
LM3909N
LM3909
1N4510
500ns)
2N1711
D40K4
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8 channel optocouplers
Abstract: 2a quad darlington switch DARLINGTON phototransistor 14 2A Optocouplers QUAD Phototransistor Optocouplers TIL917B TIL919B TIL917 TIL917A TIL917C
Text: TIL917, TIL917A, TIL917B, TIL917C, TIL918, TIL918A TIL918B, TIL918C, TIL919, TIL919A, TIL919B, TIL919C SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS/OPTOISOLATORS SOOS030 – D4000, FEBRUARY 1992 • • • • • Gallium-Arsenide Diode Infrared Source Source Is Optically Coupled to Silicon
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TIL917,
TIL917A,
TIL917B,
TIL917C,
TIL918,
TIL918A
TIL918B,
TIL918C,
TIL919,
TIL919A,
8 channel optocouplers
2a quad darlington switch
DARLINGTON phototransistor 14
2A Optocouplers
QUAD Phototransistor Optocouplers
TIL917B
TIL919B
TIL917
TIL917A
TIL917C
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D400
Abstract: transistor D400 diode d400 D400 transistor D400 data sheet download d400 f D400 data sheet datasheet transistor D400 D400 datasheet d400 transistor datasheet
Text: Rectifier Diode D400 Technical Data Typical applications : All purpose high power rectifier diodes, Non-controllable and half controlled rectifiers . Type No. D400/04 D400/08 D400/12 D400/16 VRRM Volts 400 800 1200 1600 Symbol I F(AV) I FSM I2t I RRM VF
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D400/04
D400/08
D400/12
D400/16
15Nm/bolt
D400
transistor D400
diode d400
D400 transistor
D400 data sheet download
d400 f
D400 data sheet
datasheet transistor D400
D400 datasheet
d400 transistor datasheet
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TPIC2701
Abstract: ULN2001A ULN2004A D4044 Clamp-Diode
Text: TPIC2701 7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY SLIS019 – D4044, SEPTEMBER 1992 – REVISED OCTOBER 1992 • • • • • • Seven 0.5-A Independent Output Channels Integrated Clamp Diode With Each Output Low rDS on . . . 0.5 Ω Typical Output Voltage . . . 60 V
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TPIC2701
SLIS019
D4044,
TPIC2701
ULN2001A
ULN2004A.
ULN2004A
D4044
Clamp-Diode
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diode D40
Abstract: D4012 D-40 d4008
Text: Rectifier Diode D40 Technical Data Typical applications : All purpose high power rectifier diodes, Non-controllable and half controlled rectifiers . Type No. D40/02 D40/04 D40/08 D40/12 D40/16 VRRM Volts 200 400 800 1200 1600 Symbol I F(AV) I FSM I2t I RRM
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D40/02
D40/04
D40/08
D40/12
D40/16
diode D40
D4012
D-40
d4008
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D45H11 equivalent replacement
Abstract: 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100 MJ10009
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10009* Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS
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MJ10009
Volt32
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
D45H11 equivalent replacement
2N5036 equivalent
BU108
2SD218 equivalent
MJE6044 equivalent
BD420 equivalent
2SB557 equivalent
BU326
BU100
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BU108
Abstract: BDX33D equivalent BD130 TO126 TIP-551 2SA627 BU100 2SB554 cross reference 2SC2536 2N3025 Transistor 3202 1 A 60
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10007* Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode *Motorola Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS
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MJ10007
Curr32
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
BU108
BDX33D equivalent
BD130 TO126
TIP-551
2SA627
BU100
2SB554 cross reference
2SC2536
2N3025
Transistor 3202 1 A 60
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MJ3001 equivalent
Abstract: bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent bd139 equivalent transistor BU108 BDT65C equivalent 2sd313 equivalent darlington tip31
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10005* Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS
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MJ10005
MJ10005*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
MJ3001 equivalent
bd139 equivalent
transistor equivalent book 2SC2073
2N3055 equivalent transistor NUMBER
MJE371 equivalent
bd139 equivalent transistor
BU108
BDT65C equivalent
2sd313 equivalent
darlington tip31
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2sC144
Abstract: lc 3101 ST BDW83C BUX98A BU326 BU108 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18604D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 3 AMPERES 1600 VOLTS 100 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network for
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MJE18604D2
MJE18604D2
Spr32
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
2sC144
lc 3101
ST BDW83C
BUX98A
BU326
BU108
BU100
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Untitled
Abstract: No abstract text available
Text: RM400HA-34S Tentative Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S u p e f F S S t R e C O V e ty Single Diode Module 400 Amperes/1700 Volts Description: O U TLINE DRAWING Powerex Super-Fast Recovery Single Diode Modules are
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RM400HA-34S
Amperes/1700
1RM400HA-34S
C0HHECT10N
RM400HA-34S
00A/m
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Untitled
Abstract: No abstract text available
Text: m N ERBL RM400HA-34S Tentative P ow erex, Inc., 2 0 0 H illis S treet, Youngwood, P en n sylvan ia 15 697-1800 4 12 92 5 -7 2 7 2 S u p e t F a s t R e C O V e ty Single Diode Module 400 Amperes/1700 Volts Description: Powerex Super-Fast Recovery Single Diode Modules are
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RM400HA-34S
Amperes/1700
00A/n
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HPND4050
Abstract: IC STU 404 D HPND-4050
Text: E 3 Pa c k a r d APPLICATION NOTE 971 The HPND-4050 Beam Lead Mesa PIN in Shunt Applications INTRODUCTION The beam lead PIN diode, w h ile sa tisfyin g requirem ents fo r low ca pa citan ce and planar c irc u it attachm ent, is g e n e ra lly fa b rica te d as a planar PIN diode in o rd e r to
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HPND-4050
D-4050
HPND4050
IC STU 404 D
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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PDF
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D4027BC
Abstract: No abstract text available
Text: O ctober 1987 Revised January 1999 SEMICONDUCTOR TM General Description All inputs are protected a gainst dam age due to static dis charge by diode clam ps to V DD and V s s- The C D4027BC dual J-K flip-flops are m onolithic com ple m entary MOS CM OS integrated circuits constructed with
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CD4027BC
CD4027BC
D4027BC
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D4030A
Abstract: d4030
Text: A I R C H I L D O ctober 1987 Revised January 1999 SEMICONDUCTOR TM General Description protected from dam age due to static discharge by diode clam ps to V DD and V Ss- T h e C D4070BC em ploys com plem entary MOS CMOS transistors to achieve w ide pow er supply operating range,
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CD4070BC
CD4070BC
D4070BC
D4030A
d4030
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