Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE D51 Search Results

    DIODE D51 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE D51 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    samsung r540

    Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
    Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP


    Original
    PDF ZD500 QF500 RHU002N06 200MA OT-323 F820P 33x33mm 500MHz K4J52324QC 512Mbit samsung r540 Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535

    BT 69D

    Abstract: FBC 320
    Text: Technische Information / technical information IGBT-Module IGBT-modules FF200R12MT4 EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorläufige Daten / preliminary data


    Original
    PDF FF200R12MT4 CBB32 CBB326 223DB 2313BCBC 1231423567896A42BCD6ED3F 54B36 BT 69D FBC 320

    DIODE C06-15

    Abstract: DIODE C06 15 DIODE C06-13
    Text: Technische Information / technical information IGBT-Module IGBT-modules FS300R17KE3 EconoPACK + Modul mit Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™+ module with trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter


    Original
    PDF FS300R17KE3 CBB32 CBB326 223DB 2313BCBC A3265C C14BC DIODE C06-15 DIODE C06 15 DIODE C06-13

    LTC4098-3.6

    Abstract: SXA-01GW-P0.6
    Text: Technische Information / technical information IGBT-Module IGBT-modules FF400R12KE3_B2 62mm C-Serien Modul mit Trench/Feldstopp IGBT3, EmCon High Efficiency Diode und M5 Lastanschluß 62mm C-series module with trench/fieldstop IGBT3 EmCon High Efficiency diode and M5 power terminals


    Original
    PDF FF400R12KE3 CBB32 CBB326 223DB 2313BCBC 1231423567896A42BCD6ED3F 54B36 LTC4098-3.6 SXA-01GW-P0.6

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules BSM100GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


    Original
    PDF BSM100GB120DLC CBB32 CBB326 223DB 2313BCBC 3265C C14BC 1231423567896A42BCD6ED3F 54B36

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules BSM150GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


    Original
    PDF BSM150GB120DLC CBB32 CBB326 223DB 2313BCBC 3265C C14BC 1231423567896A42BCD6ED3F 54B36

    br - b2d

    Abstract: br b2d
    Text: Technische Information / technical information IGBT-Module IGBT-modules BSM200GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


    Original
    PDF BSM200GB120DLC CBB32 CBB326 223DB 2313BCBC 3265C C14BC 1231423567896A42BCD6ED3F 54B36 br - b2d br b2d

    LTC4098-3.6

    Abstract: 6n36
    Text: Technische Information / technical information IGBT-Module IGBT-modules BSM300GA120DLCS 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


    Original
    PDF BSM300GA120DLCS CBB32 CBB326 223DB 2313BCBC 3265C C14BC LTC4098-3.6 6n36

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules BSM200GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


    Original
    PDF BSM200GA120DLC 36134B6

    R222 smd

    Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
    Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP


    Original
    PDF CA-001175 BA41-00418A BA62-00194A BA62-00306A BA68-40005L 120OHM 143OHM/132MHZ 213OHM/390MHZ, R222 smd RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548

    LTC4098-3.6

    Abstract: 36A65 FBC 320
    Text: Technische Information / technical information IGBT-Module IGBT-modules BSM200GA120DLCS 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


    Original
    PDF BSM200GA120DLCS CBB32 CBB326 223DB 2313BCBC 3265C C14BC LTC4098-3.6 36A65 FBC 320

    2NU diode

    Abstract: LTC4098-3.6 DIODE C06-15
    Text: Technische Information / technical information IGBT-Module IGBT-modules BSM400GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


    Original
    PDF BSM400GA120DLC 36134B6 61FA3265 2NU diode LTC4098-3.6 DIODE C06-15

    br b2d

    Abstract: br- b2d br - b2d LTC4098-3.6
    Text: Technische Information / technical information IGBT-Module IGBT-modules BSM300GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


    Original
    PDF BSM300GB120DLC CBB32 CBB326 223DB 2313BCBC 3265C C14BC 1231423567896A42BCD6ED3F 54B36 br b2d br- b2d br - b2d LTC4098-3.6

    Untitled

    Abstract: No abstract text available
    Text: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such


    Original
    PDF DK-8381 KLED0002E01

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DZ3600S17K3_B2 Vorläufige Daten / preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values !32C5C361CB3D132214DDD" 2313BCBC36134#6233236B4"3


    Original
    PDF DZ3600S17K3 2313BCBC 223DB 86B56 1231423567896A42BCD6EF 54B36 3567896A42BCD6

    motor H bridge 5 amperes

    Abstract: AC TO DC DIODE BRIDGE A three-phase diode bridge rectifier A three-phase diode bridge rectifier datasheet diode ru power circuit of three phase control rectifier ME700802 powerex ME70
    Text: ME700802 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Three-Phase Diode Bridge Modules 20 Amperes/800 Volts F K K Description: Powerex Three-Phase Diode Bridge Modules are designed for use in three phase bridge applications. The modules are isolated


    Original
    PDF ME700802 Amperes/800 motor H bridge 5 amperes AC TO DC DIODE BRIDGE A three-phase diode bridge rectifier A three-phase diode bridge rectifier datasheet diode ru power circuit of three phase control rectifier ME700802 powerex ME70

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DD800S33K2C Vorläufige Daten / preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values #32F5F361F3D132214DDDC 2313FF36134$62332364C3


    Original
    PDF DD800S33K2C 03265F 1231423567896AB2C3D6EF32

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DD200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $32F5F36%1F&3D132214DDDC 2313FF3613462332364C3


    Original
    PDF DD200S33K2C 13265F

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $32F5F361F3D132214DDDC 2313FF36134%62332364C3 &'6 6 *+ &'6(6 )*+


    Original
    PDF DD1200S33K2C 03265F 1231423567896AB2C3D6EF32

    diode d51

    Abstract: powerex cd powerex ME70 diode RN 1220
    Text: m ßlEREX ME700802 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 T tlT G G -P h S S G Diode Bridge Modules 20 Amperes/800 Volts Description: Powerex Three-Phase Diode Bridge Modules are designed for use in three phase bridge applica­


    OCR Scan
    PDF ME700802 Amperes/800 ME700802 diode d51 powerex cd powerex ME70 diode RN 1220

    BB249

    Abstract: IEC134 na 39
    Text: BB249 _ A _ SILICON PLANAR VARIABLE CAPACITANCE DIODE The BB249 is a variable capacitance diode in a miniature glass envelope intended for electronic tuning in v.h.f. television tuners with extended band I FCC and OIRT-norm . Diodes are supplied in matched sets (minimum 120 pieces and divisible by 12) and the capacitance


    OCR Scan
    PDF BB249 BB249 to500 IEC134 na 39

    DSI35-12A

    Abstract: DSI35 DSA35-12A diode T 3512 35-16A 3516A 3508a diode avalanche DSA
    Text: 35 35 • X .2 Rectifier Diode Avalanche Diode ' RRM F RMS F(AV)M v RSM V(BR)m in VR R M •X. Anode ^ ^ on stud ■j" on stud V 900 1300 - 800 1200 DS 35-08A DS 35-12 A DSI35-08A DSI35-12A 1300 1700 1900 1300 1750 1950 1200 1600 1800 DSA35-12A OSA 35-16A


    OCR Scan
    PDF DSI35-08A DSI35-12A DSAI35-12A DSAI35-16A 1/4-28UNF 5-08A DSA35-12A 5-16A DSA35-18A D5-12 DSI35 diode T 3512 35-16A 3516A 3508a diode avalanche DSA

    D518 diode

    Abstract: DS7508B DSA75-16B DSA75-12B DS75-08B
    Text: DS 75 OSA 75 Rectifier Diode Avalanche Diode DSI 75 DSAI75 vRRM =800-1800 v If rms> = 160 a Ìf(av m = 110 A v RSM V V(BR)mm :'£> V RRM V X Anode \ on stud V I Cathode •J" on stud 900 1300 - - 800 1200 DS75-08B DS75-12B OSI 75-08B DSI 75-12B 1300 1700 1900


    OCR Scan
    PDF DSAI75 75-08B 75-12B DSAI75-12B DSAI75-16B DSAI75-18B 1/4-28UNF DS75-08B DS75-12B DSA75-12B D518 diode DS7508B DSA75-16B

    CV8805

    Abstract: BY206 diode CV8308 SOD-18 BYX94 BY227 diode BY207 Diode 1N4007 DO-7 Rectifier Diode BYX10 diode BY227
    Text: Diodes silicon picoampere diode book 1 part 3 and 4 BAV45 Description I frm m A < i Type No. E xtrem ely lo w leakage and lo w capacitance diode. O utline T O —18. Dwg. ref. A T 5 35 I r at V r 5 (pA ) 100 I r at V r 20 (pA ) max. lF (m A) (V ) Vf at I f


    OCR Scan
    PDF BAV45 BY206 DO-14 BY207 h--22-> crt6-25 CV8805 BY206 diode CV8308 SOD-18 BYX94 BY227 diode Diode 1N4007 DO-7 Rectifier Diode BYX10 diode BY227