Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE D7E Search Results

    DIODE D7E Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE D7E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SGS30DA070D

    Abstract: 57558 SGS30DA060D 19002D SGS30DA060 SGS30D
    Text: S G S-THOilSON D7E D I TRANSPACK NPN POWER DARLINGTON 19001 m o dule APPLICATIONS: 7^237 These products are silicon NPN power dariingtons for industrial switching applications with three-phase mains operation. FAST FREEWHEEL DIODE ISOLATED POWER MODULE 30KVA - 375W


    OCR Scan     		PDF SGS30DA060D SGS30DA070D 30KVA SGS30DA070D 57558 19002D SGS30DA060 SGS30D

    A4N48A

    Abstract: 4N47A
    Text: TEXAS INSTR {OPTO} □7E D | flìblTSb 007S13T 7 | 4N47A, 4N48A, 4N49A OPTOCOUPLERS T -H t-% 3 D3127, JU N E 1988 GALLIUM ARSENIDE DIODE INFRARED SOURCE OPTICALLY COUPLED TO A HIGH-GAIN N-P-N SILICON PHOTOTRANSISTOR • Both Input and Output Circuits are Isolated


    OCR Scan     		PDF 007S13T 4N47A, 4N48A, 4N49A D3127, 4N49A) OD7S144 A4N48A 4N47A

    ETC 529 DIODE

    Abstract: devar Devar amplifier ERIE CAPACITORS red ERIE CAPACITORS 539-005-5 devar CAPACITORS ETC 529 capacitors erie #8 Ground Wire
    Text: DEVAR INC/ C O N T R O L D7E D | S7TtiDflQ O D D I O ^ E □ | T-V/^6 7 DEVAR Inc. photo detector with amplifier typ e-539 INTRODUCTION _ Type 539 Optical Detectors are wide bandwidth 1 ight-to-voltage. converters spec­ ifically designed for fibre optic data links and instruments requiring fast res­


    OCR Scan     		PDF 100MHz 529-XX-5 360ju ETC 529 DIODE devar Devar amplifier ERIE CAPACITORS red ERIE CAPACITORS 539-005-5 devar CAPACITORS ETC 529 capacitors erie #8 Ground Wire

    tda 2038

    Abstract: tda 2023
    Text: IGBT-Module BROUN/ABB SEMICON D7E D | 004fl30fl DOODEMD 3 | A S E A r- 3 3 - ^ 7 f t^ f ' p 500-600V ; : Spannung/Voltage ^ Typ/type VII 25-.G1 VII 50-.G1 VII 75-.G1 Kollektor-Emitter-Durchbruchspannung Collector-Emltter Breakdown Voltage V Br ces V 500


    OCR Scan     		PDF 004fl30fl 00-600V VII100-. VII150-. VII200-. tda 2038 tda 2023

    p217s

    Abstract: p317 w55c p217 ic 17358 17356 C82 to-220 DIODE C06 15 C82J W25-C
    Text: S G S-THOnSON D7E 1 73C 1 7 355 SGSP216/P2I7 1 SGSP316/P317 ] SGSP516/P517 ; HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS V DGR V qs Id Idlm •! P.0« "^stg Tl o Q01?flSû 1 T 3 9 - / / N-CHANNEL POWER MOS TRANSISTORS These products are diffused multi-cell silicon gate


    OCR Scan     		PDF SGSP216/P217 SGSP316/P317 SGSP516/F517 OT-82 SGSP216 SGSP217 T0-220 SGSP316 SGSP317 SGSP516 p217s p317 w55c p217 ic 17358 17356 C82 to-220 DIODE C06 15 C82J W25-C

    D773

    Abstract: P369 diode sg 46 diode sg 69 P469 SGSP368 SGSP3B8/P369 SP369 SGSP469 sgsp468
    Text: S G S -T H O M S O N SGSP368/P369 D7E D § T T ST H B ? 73C 17403 D 0D 17TQ ti û | “ SGSP468/P469 SGSP568/P569 : N_CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field


    OCR Scan     		PDF SGSP368/P369 SGSP468/P469 SGSP568/P569 SP368 SP468 SP568 SP369 SP469 SP569 C-130 D773 P369 diode sg 46 diode sg 69 P469 SGSP368 SGSP3B8/P369 SGSP469 sgsp468

    diode sg 87

    Abstract: P302T SGSP101 GS3J P302 SGSP sgsp302 p102 capacitance SG 21 SP301
    Text: S G S -T H O M S O N 73C D7E 17 282 | 7 ‘i 2 c] 2 3 ? 00177Ö 5 D Q | y . 0 7 iX V '' SGSP101/P102 * S ^ > SGSP201/P202 N-CHANNEL POWER MOS TRANSISTORS ’ sgsp 301/P30Z HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate


    OCR Scan     		PDF SGSP101/P102 SGSP201/P202 301/P30Z SP301 SP302 E--03 SGSP101/P102 SGSP301/P302 1728J diode sg 87 P302T SGSP101 GS3J P302 SGSP sgsp302 p102 capacitance SG 21

    5n06

    Abstract: diode c335 5N05 SEFP5N05 SEFP5N06
    Text: S G S-THOHSON D7E » | 7la-H37 0018113 0 II 73C 1 7 6 1 0 D I: I, N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors. ^stg Ti


    OCR Scan     		PDF 7la-H37 SEFP5N05 SEFP5N06 0V/60V C-335 5n06 diode c335 5N05 SEFP5N06

    SGSP157

    Abstract: No abstract text available
    Text: S G S-THOîISON D7E » | 7 ^ 5 3 7 001704b S ,. « 73C 1 7 3 4 3 D 7— 3 f ' O / i SGSP157 j SGSPI58 . ] N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field


    OCR Scan     		PDF 001704b SGSP157 SGSPI58 0V/60V SP157 SGSP157 SGSP158

    Diode D7E

    Abstract: sef220 SEF221
    Text: 7^237 S G S-THOMSON D7E D 73C 17474 D 7^ 3 9 -/3 SEF220 SEF221 SEF222 SEF223 '•-i ?\ \\\ N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.


    OCR Scan     		PDF SEF220 SEF221 SEF222 SEF223 00V/150 SEF223 Diode D7E

    5n06

    Abstract: 5N05 S-6059 SGSP351 DIODE c335 17611 SEFP5N05 17610 SEFP5N06
    Text: S G S-THOHSON D7E » | 7la-H37 0018113 0 II 73C 1 7 6 1 0 D r - 3 ? -tr : I: I, SEFP5N05 SEFP5N06 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS V DSS T h e se p ro d ucts are diffused multi-cell silicon gate N -C h a n n e l e n ha ncem e nt m ode P o w e r-M o s field


    OCR Scan     		PDF SEFP5N05 SEFP5N06 0V/60V 20Kfl) 300/is, SGSP351 100/is s-6059 C-335 5n06 5N05 DIODE c335 17611 17610 SEFP5N06

    C1537

    Abstract: SEF830
    Text: SG S- TH O n S O N D7E D 73C 17 5 50 7 i 5 c1537 D 0 1 Ô 0 S 3 fl 0 "TT 3 V -// N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.


    OCR Scan     		PDF c1537 00V/450V SEF830 SEF831 SEF832 SEF833 SEF830 SEF83I SEF832

    RF Power Transistors

    Abstract: SEF420
    Text: G S-T HOMSQN D7E D 73 C Ï749Q SEF420 SEF421 SEF422 SEF423 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors. ABSOLUTE M A X IM U M RATINGS


    OCR Scan     		PDF SEF420 SEF421 SEF422 SEF423 00V/450V 00V/450V 00A///S C-223 RF Power Transistors

    c2539

    Abstract: sef831 SEF630
    Text: p ’ v • » • rV iC 't f* S G S-THÖNSON D7E D | 7ciaci23? 0010033 2 J 3C 173 3Q D i N-GHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors.


    OCR Scan     		PDF SEF630 SEF631 SEF832 SEF633 00V/150 SEF630/SEF631 300/us, c2539 sef831

    3N35

    Abstract: Diode D7E 2N45 SEFM2N45
    Text: S G S-THOMSON D7E D 73C 17571 D ! . 'i SEFH2H45/SEFP2N45 SEFM3N33/SEFP3N35 s : SEFM3N40/SEFP3N40 7‘iEclS37 D01flQ74 h t HIGH SPEED SW ITCHIN G APPLICATIONS Iq m Ptot ^stg Ti - f R D S (ON •d 350/400V 3.3 Q 3 A Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 K f l)


    OCR Scan     		PDF SEFH2H45/SEFP2N45 SEFM3N33/SEFP3N35 SEFM3N40/SEFP3N40 D01flQ74 350/400V C-296 SEFM2H45/SEFP2N45 SEFH3N35/SEFP3N35 S-6059 3N35 Diode D7E 2N45 SEFM2N45

    p461

    Abstract: P561 SGSP461 transistors C106 SGSP561 bv42 sgsp302
    Text: S G S-TH O M SO N . ; D7E ; . 73C •* h I "■ SGSP361/P461/P561 ] ;A h SGSP302/P4B2/P562. : l , 1 j D g 17379 7^5^537 HIGH SPEED SWITCHING APPLICATIONS V DSS TO-220 SOT-93 TO-3 A B S O L U T E M A X IM U M R A T IN G S Drain-source voltage VGS = 0 Drain-gate voltage (RGS = 20KD )


    OCR Scan     		PDF SGSP361/P461/P561 SGSP302/P4B2/P562. O-220 OT-93 SGSP361 SGSP461 SGSP561 SGSP362 SGSP462 SGSP562 p461 P561 transistors C106 bv42 sgsp302

    SGSP256

    Abstract: SGSP356 SP156 sgsp254 sgsp354 SGSP154
    Text: S G S-THOMSON D7E D | ÏTSTSB? 0017630 b | / J 3 C ~ J r Î3 3 5 D 7 ^ 3 9 -0 7 SGSP154 /155 /156 SGSP254/255/258 SGSP354/355/356 ^-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHIN G APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field


    OCR Scan     		PDF SGSP154 SGSP254/255/258 SGSP354/355/356 50V/400V SGSP254 SGSP354 OT-82 O-220 SGSP155 SGSP256 SGSP356 SP156

    Untitled

    Abstract: No abstract text available
    Text: S G S-THOHSON D7E D | 7 ^ 5 3 7 O O lS b ö k I In t e g r a t e d n iR n i N TS PRELIMINARY DATA HC620 OCTAL BUS TRANSCEIVER INVERTING 3-STATE HC623 OCTAL BUS TRASCEIVÈR 3-STATE DESCRIPTIO N The M 54/74HC620/623 are high speed CM OS OC­ TAL BUS TRANSCEIVERS fabricated in silicon


    OCR Scan     		PDF HC620 HC623 54/74HC620/623 HC620) HC623) HC623

    sgsp221

    Abstract: P522 SGSP522 P5-22 P322 SGSP321 SGSP421 SGSP321/P322
    Text: S ' r f F • , , • ; % G r - - Z , k riI \ -■ S-THOMSON ? D7E D — -5J. 73C 17363 S0SP22I/P222 3 • SGSP321/P322 SGSP421/P422 ■> i • . ' These products are diffused multi-cell silicon gate N-Channel enhancem ent mode Pow er-M os field effect transistors.


    OCR Scan     		PDF S0SP22I/P222 SGSP321/P322 SGSP421/P422 SGSP221 SGSP321 SGSP421 SGSPS21 SP322 SP522 P522 SGSP522 P5-22 P322

    Untitled

    Abstract: No abstract text available
    Text: S G S-THOnSON D7E » I 7121237 0011,212 s I Î5 p ! ; f * r LOW POWER SCHOTTKY INTEGRATED CIRCUITS > v 1 67C 16421 t -6 6 -2 1 -5 1 D - QUAD 2-PORT REGISTER QUAD 2-INPUT M ULTIPLEXER W ITH STORAGE DESCRIPTIO N The T54LS298/T74LS298 is a Quad 2-Port Register.


    OCR Scan     		PDF T54LS298/T74LS298 LS298

    T74LS

    Abstract: LS645 LS640 LS641
    Text: s G S-THOMSOn D7E D I Lüw P U W tK S U H U INTEGRATED CIRCUITS . _ 67C . 7^5^53? 001L3T? I ;T54LS640/641/645j I IKY D 16526 fl 7c- 5 ' 2 " 3 i PRELIMINARY DATA O CTAL BUS TRANSCEIVERS DESCRIPTION The T54LS/T74LS640/641/645 are octal bus tran­


    OCR Scan     		PDF 7t5ts37 t-52-zi IT74LS640/64Ã T54LS/T74LS640/641/645 LS640 LS641 LS645 T74LS

    T74LS155

    Abstract: No abstract text available
    Text: S G S-THONS ON D7E D I 7 ^ 2 3 7 DDlblOQ 3 I LOW POWER SCHOTTKY INTEGRATED CIRCUITS 6 T C - 1 6 2 2 9 . T -6 6 -2 1 -5 5 DUAL 1-OF-4 DECODER/DEMULTIPLEXER DESC RIPTIO N The TTL/MSI T54LS155/T74LS155 and T54LS156/ T74LS156 are high speed Dual 1-of-4 Decoder/De­


    OCR Scan     		PDF T54LS155/T74LS155 T54LS156/ T74LS156 T74LS155

    T0606

    Abstract: No abstract text available
    Text: S G S-THOHSÔN D7E D | 7 ^ 2 3 7 Mlfc.053 0 | LOW POWER SCHOTTKY INTEGRATED CIRCUITS '* - i 16151 D 7 ~ -V < £ -^ 7 -a 7 DUAL JK POSITIVE EDGE-TRIGGERED FLIP-FLOP DESCRIPTION The T54LS/T74LS109-109A consist of two high s£eed completely independent transition clocked


    OCR Scan     		PDF T54LS/T74LS109-109A T54LSXXX T74LSXXX T0606

    p239

    Abstract: P238 diode P339 diode P339 SGSP338 P-239 INA723 P-139 sgsp238 SGSP138
    Text: S G S-THOnSON D7E D | 7 ^ 2 3 7 DDl7fllS S r 73C 17312 SGSP138/P138 SGSP238/P239 SGSP338/P339 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field


    OCR Scan     		PDF SGSP138/P138 SGSP238/P239 SGSP338/P339 OT-82 O-220 300jus, DD17fllfl SGSP138/P139 SGSP338/P339 p239 P238 diode P339 diode P339 SGSP338 P-239 INA723 P-139 sgsp238 SGSP138