vrm 20
Abstract: diode reverse voltage protection DA221
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diode DA221 SOT-523 SWITCHING DIODE FEATURES: z Bias circuits z Protection circuits MARKING: K Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃ Symbol Limits
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OT-523
DA221
OT-523
vrm 20
diode reverse voltage protection
DA221
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1X3 diode
Abstract: dan217 DA204K DA221 DA204U
Text: Diodes Series connected diode array DA221 / DA204U / DA204K / DAN217 FApplications Bias circuits Protection circuits FExternal dimensions Units: mm FFeatures 1) Two diode elements are connected in series (vfx2) per circuit. 2) Three types of packages are
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DA221
DA204U
DA204K
DAN217
DA221/DA204U/DA204K/DAN217
DA204K)
DAN217)
1X3 diode
dan217
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes DA221 SOT-523 SWITCHING DIODE FEATURES: z Bias circuits z Protection circuits 1 3 2 MARKING: K Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃ Parameter
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OT-523
DA221
OT-523
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Untitled
Abstract: No abstract text available
Text: DA221 SURFACE MOUNT FAST SWITCHING DIODE WON-TOP ELECTRONICS Pb Features Dual Diode Series Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications Plastic Material – UL Recognition Flammability
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DA221
OT-523,
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: DA204U SURFACE MOUNT FAST SWITCHING DIODE WON-TOP ELECTRONICS Pb Features Dual Diode Series Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications Plastic Material – UL Recognition Flammability
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DA204U
OT-323,
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: DA221 Switching Diode SOT-523 Features Bias circuits Protection circuits MARKING: K Dimensions in inches and millimeters Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃ Symbol Limits Unit Peak reverse voltage VRM 20 V DC reverse voltage
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DA221
OT-523
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DA2F75N12S
Abstract: 5DM1
Text: DA2F75N12S May. 2009 Ultra-Fast Soft Recovery Diode Module Description Equivalent Circuit and Package Ultra-FRD module devices are optim ized to reduce losses and EMI/RFI in high frequency power conditioning electrical systems. These diode modules are ideally suited for power converters,
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DA2F75N12S
DA2F75N12S
5DM1
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DA221
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D SOT-523 Plastic-Encapsulated Diode DA221 SOT-523 SWITCHING DIODE FEATURES: Power dissipation PD: 150 mW Tamb=25℃ Collector current 100 mA IF: Collector-base voltage 20 V VR: Operating and storage junction temperature range
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OT-523
DA221
OT-523
DA221
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da2f100p12s
Abstract: DA2F100 DA2F100N12S da2f100n
Text: DA2F100N/P12S May. 2009 Ultra-Fast Soft Recovery Diode Module Description Equivalent Circuit and Package Ultra-FRD module devices are optim ized to reduce losses and EMI/RFI in high frequency power conditioning electrical systems. These diode modules are ideally suited for power converters,
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DA2F100N/P12S
da2f100p12s
DA2F100
DA2F100N12S
da2f100n
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da2jf81
Abstract: No abstract text available
Text: New Proposal for Strobe Circuit 800V/0.2A Small Package Fast Recovery Diode DA2JF81 Overview DA2JF81 is the high voltage fast recovery diode FRD which has high speed trr characteristics and can reduce the switching loss for strobe circuit. Package is SMini2-F5 (2.50 x 1.25mm) which is
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00V/0
DA2JF81
DA2JF81
200mA
100mA,
200mA,
M00712CE
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A0 DIODE
Abstract: A0 SOT DA204U A005
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode DA204U SOT-323 SWITCHING DIODE FEATURES: 1. 01 REF 1. 25¡ À0. 05 Power dissipation mW Tamb=25℃ 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current 100 mA IF: Collector-base voltage
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OT-323
DA204U
OT-323
A0 DIODE
A0 SOT
DA204U
A005
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1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
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DA204U
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D SOT-323 Plastic-Encapsulated Diode DA204U SOT-323 SWITCHING DIODE FEATURES: 1. 01 REF 1. 25¡ À0. 05 Power dissipation mW Tamb=25℃ 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current 100 mA IF: Collector-base voltage 20
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OT-323
DA204U
OT-323
DA204U
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sms05
Abstract: GPZ1275 xbox 360 lcd gameboy xbox 360 power supply FC177 SMDA08 VSB10P15LCI VS10P05 MSMF15C
Text: TABLE OF CONTENTS Product Index – Alphanumeric . 2 TVS Diode Arrays. 3
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USB004,
USB208
SFC05-4
U040xFC
ET724,
sms05
GPZ1275
xbox 360
lcd gameboy
xbox 360 power supply
FC177
SMDA08
VSB10P15LCI
VS10P05
MSMF15C
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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Untitled
Abstract: No abstract text available
Text: VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES • Trench IGBT technology • HEXFRED clamping diode technology • Rectifier bypass diode • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance
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VS-ETL015Y120H
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES • Trench IGBT technology • HEXFRED clamping diode technology • Rectifier bypass diode • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance
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VS-ETL015Y120H
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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samsung r540
Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP
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ZD500
QF500
RHU002N06
200MA
OT-323
F820P
33x33mm
500MHz
K4J52324QC
512Mbit
samsung r540
Samsung R590
R721-R725
C732 SMD
10000NF
R616 R617
R714-R715
samsung r580
b16 r649
Smd q535
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Untitled
Abstract: No abstract text available
Text: MURI DA20020 DACO SEMICONDUCTOR CO,LTD. THRU MUFRI DA20060 SUPER FAST HIGH POWER DIODE MODULE TYPES 200A Features High Surge Capability Types Up to 600V V rrm Isolation Type Package Electrically Isolation base plate 200 Amp Rectifier 200- 600 Volts HEAVY DIODE
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DA20020
DA20060
MURIDA20020
MURIDA20040
MURIDA20060
MURIDA20020
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A114D
Abstract: AN217 DAN217C
Text: Diode arrays Diode array summary Part no. DC reverse voltage V r V Mean rectifying current l0 (mA) Reverse recovery time trr (ns) Terminal capacitance (max) CT (PF) Package type Circuit diagram Page High speed switching diode arrays FMN1 80 25 4 3.5 SMD5
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IMN11
IMP11
AN209S
AN215
DAN803
DAP209S
DAP215
AP401
AN403
AP601
A114D
AN217
DAN217C
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DIODE A112
Abstract: AP-803 AN2153 FTL 12-1 202k 204k
Text: IM • Diode Array • High-Speed Switching Diode Arrays Internal circuit Type D AN 222 • Special Diode Arrays tr r Vr V lo (m A) Max. (ns) 80 100 4 Í1) I2I (31 IT fii EM3 Internal circuit — D A N 202U 80 100 4 UMT I . + D A N 202K 80 100 4 SMT 31 D AN201
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AN201
DIODE A112
AP-803
AN2153
FTL 12-1
202k 204k
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A116 diode
Abstract: DIODE A116 as 15-f DIODE A118 AP-222 diode smd6 44
Text: Introduction Diode array summary see page 227 Part number DC reverse voltage V r (V) Mean rectifying current l0 (mA) Reverse Terminal recovery time capacitance (max) trr (ns) CT (PF) Package type Circuit diagram High speed switching diode arrays FMN1 80
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IMN11
IMP11
DAN209S
DAN215
DAN803
DAP209S
DAP215
AP401
AN403
AP601
A116 diode
DIODE A116
as 15-f
DIODE A118
AP-222
diode smd6 44
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Untitled
Abstract: No abstract text available
Text: DACO SEMICONDUCTOR CO,LTD. SUPER FAST HIGH POWER DIODE MODULE TYPE 200A Features High Surge Capability Type 1200V Vrrm Isolation Type Package Electrically Isolation base plate 200 Amp Rectifier 1200 Volt HEAVY DIODE Maximum Ratings Operating Temperature: -5 5 C to +175 °C
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MURIDA200120
DA2091
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