Untitled
Abstract: No abstract text available
Text: ROITHNER LASERTECHNIK PRESENTS NEW HIGH POWER RED LASER DIODES 9 mm laser diode package RLT635-100G, 635 nm, 100 mW, mm, 9 mm, datasheet RLT650-200G, 650 nm, 200 mW, mm, 9 mm, with photodiode, datasheet TO3 laser diode package RLT635-150-TO3, 635 nm, 150 mW, mm, TO3, without photodiode, datasheet
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RLT635-100G,
RLT650-200G,
RLT635-150-TO3,
RLT635-300-TO3,
RLT635-500-TO3,
RLT65300T,
RLT650-500-T,
RLT650-1000-T,
RLT635-150-C,
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Untitled
Abstract: No abstract text available
Text: TAK CHEONG PRELIMINARY DATASHEET TCBAT85 200 mW DO-35 Hermetically Sealed Glass Fast Switching Schottky Barrier Diode AXIAL LEAD DO35 Absolute Maximum Ratings Symbol PD TSTG TA = 25°C unless otherwise noted Parameter Value Units 200 mW -65 to +125 °C
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BAT85
DO-35
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD126534 TECHNICAL DATA DATASHEET 4301, REV. A HERMETIC POWER SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200 C Operating Temperature Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features:
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SHD126534
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Untitled
Abstract: No abstract text available
Text: SHD114634 SHD114634A SHD114634B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 290, REV. B HERMETIC POWER SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200 C Operating Temperature Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
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SHD114634
SHD114634A
SHD114634B
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MPD3T5N200-703-E
Abstract: No abstract text available
Text: MPD3T5N200-703 Positive & Negative Voltage PIN Diode Driver Series Datasheet Features • High Output Voltage and High Output Current PIN Diode Driver in Surface Mount Package • Usable with MSW3200 Series Symmetrical High Power SP3T Switches • Operates from +5 V and -15 V to -200 V
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MPD3T5N200-703
MSW3200
MPD3T5N200-703-E
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d3s diode
Abstract: d3s 05 diode high power pin diode d2s diode cs-70-3 d2s diode series
Text: MPD3T5N200-703 Positive & Negative Voltage PIN Diode Driver Series Datasheet Features • High Output Voltage and High Output Current PIN Diode Driver in Surface Mount Package • Usable with MSW3200 Series Symmetrical High Power SP3T Switches • Operates from +5 V and -15 V to -200 V
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MPD3T5N200-703
MSW3200
MSW3200-320,
MSW6000-600
d3s diode
d3s 05 diode
high power pin diode
d2s diode
cs-70-3
d2s diode series
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SHD126534
Abstract: No abstract text available
Text: SENSITRON SHD126534 SEMICONDUCTOR TECHNICAL DATA DATASHEET 4301, REV. - HERMETIC POWER SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200°C Operating Temperature Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode •
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SHD126534
SHD126534
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Untitled
Abstract: No abstract text available
Text: STE140NF20D N-channel 200 V, 10 mΩ typ., 140 A STripFET II Power MOSFET with fast diode in an ISOTOP package Datasheet − production data Features Type VDSS RDS(on) max ID STE140NF20D 200 V < 0.012 Ω 140 A • Exceptional dv/dt capability ■ Low gate charge
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STE140NF20D
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SHD114634
Abstract: SHD114634A SHD114634B
Text: SHD114634 SHD114634A SHD114634B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 290, REV. - HERMETIC POWER SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200°C Operating Temperature Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
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SHD114634
SHD114634A
SHD114634B
SHD114634
SHD114634A
SHD114634B
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MSW2000-200
Abstract: CS200 MSW2001-200-EVAL
Text: Surface Mount PIN Diode SP2T Switches MSW2000-200 & MSW2001-200 Series Datasheet Features • Surface Mount SP2T Switch in Compact Outline: 8mm L x 5mm W x 2.5 mm H • Higher Average Power Handling than Plastic 125 W C.W. • Higher Voltage > 500 Volts for Higher RF Peak Power (500 W)
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MSW2000-200
MSW2001-200
MSW2000-200
MSW2001-200
CS200
MSW2001-200-EVAL
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Untitled
Abstract: No abstract text available
Text: SHD126134 SHD126134P SHD126134N SHD126134D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4754, REV. A SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200°C Operating Temperature Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
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SHD126134
SHD126134P
SHD126134N
SHD126134D
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SHD126144
Abstract: SHD126144D SHD126144N SHD126144P
Text: SHD126144 SHD126144P SHD126144N SHD126144D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4755, REV. A SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200°C Operating Temperature Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
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SHD126144
SHD126144P
SHD126144N
SHD126144D
SHD126144
SHD126144D
SHD126144N
SHD126144P
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SHD126134
Abstract: SHD126134D SHD126134N SHD126134P
Text: SHD126134 SHD126134P SHD126134N SHD126134D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4754, REV. A SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200°C Operating Temperature Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
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SHD126134
SHD126134P
SHD126134N
SHD126134D
SHD126134
SHD126134D
SHD126134N
SHD126134P
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET 200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package High Voltage Switching Diode Absolute Maximum Ratings Symbol PD TA = 25°C unless otherwise noted Parameter Value Units Power Dissipation 200 mW VRRM Maximum Repetitive Reverse Voltage
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200mW
OD-323
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marking E1
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET 200mW SOD-523 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package General Purpose Application Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG TJ Power Dissipation Storage Temperature Range Value Units 200 mW -55 to +150
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200mW
OD-523
TC1N4148WT
TC1N4448WT
TC1N914BWT
marking E1
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET 200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package High Voltage Switching Diode Absolute Maximum Ratings Symbol PD TA = 25°C unless otherwise noted Parameter Value Units Power Dissipation 200 mW VRRM Maximum Repetitive Reverse Voltage
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200mW
OD-323
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B3 SOD323
Abstract: "clip bonding" sod*323* diode MARKING B3 marking V diode SOD MARKING TA SOD323 DIODE marking A SOD323
Text: TAK CHEONG PRELIMINARY DATASHEET TCRB551V-30 200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG TA = 25°C unless otherwise noted Parameter Power Dissipation Units 200 mW -65 to +125
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OD-323
TCBAT42WS,
100mA
500mA
TCRB551V-30
200mW
SC-76.
B3 SOD323
"clip bonding"
sod*323* diode MARKING B3
marking V diode SOD
MARKING TA SOD323 DIODE
marking A SOD323
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Untitled
Abstract: No abstract text available
Text: TAK CHEONG TCRB551V-30 PRELIMINARY DATASHEET 200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG TA = 25°C unless otherwise noted Parameter Power Dissipation Units 200 mW -65 to +125
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200mW
OD-323
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"clip bonding"
Abstract: No abstract text available
Text: TAK CHEONG TCRB501V-40 PRELIMINARY DATASHEET 200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG TA = 25°C unless otherwise noted Parameter Power Dissipation Units 200 mW -65 to +125
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200mW
OD-323
"clip bonding"
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sod323 marking NO
Abstract: sod*323* diode MARKING B3
Text: TAK CHEONG TCRB551V-30 PRELIMINARY DATASHEET 200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG TA = 25°C unless otherwise noted Parameter Power Dissipation Units 200 mW -65 to +125
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200mW
OD-323
sod323 marking NO
sod*323* diode MARKING B3
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IGBT IRG4PC50UD
Abstract: IRG4PC50UD
Text: Previous Datasheet Index Next Data Sheet PD 9.1471 IRG4PC50UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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IRG4PC50UD
O-247AC
IGBT IRG4PC50UD
IRG4PC50UD
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IRG4PC40UD
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD 9.1467C IRG4PC40UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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1467C
IRG4PC40UD
O-247AC
IRG4PC40UD
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IRG4PC30UD
Abstract: 6000uf igbt 600V
Text: Previous Datasheet Index Next Data Sheet PD 9.1462 IRG4PC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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IRG4PC30UD
O-247AC
IRG4PC30UD
6000uf
igbt 600V
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IRG4BC30UD
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD 9.1453 IRG4BC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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IRG4BC30UD
O-220AB
IRG4BC30UD
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