Untitled
Abstract: No abstract text available
Text: SKiiP 12NAB065V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper K<DR .< .<1Y K/DR -* P HG Q<M 45%7* 2&97'8:*7 *B7?: :76 -* P HG UVSW Q< -[ Diode - Inverter, Chopper MiniSKiiP 1 3-phase bridge rectifier +
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12NAB065V1
12NAB065V1
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cree Sic
Abstract: schottky diode FIT 155C CSD04060 CSD06060 CSD10060
Text: SiC Power Diode Reliability SiC Schottky Diode Reliability October 2008 September 2007 SiC Power Diode Reliability October 2008 Dr. Allan Ward, Manager, Advanced Device Reliability ABSTRACT Cree introduced its ZERO RECOVERY line of SiC power rectifiers four years ago
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CPWR-RS03,
cree Sic
schottky diode FIT
155C
CSD04060
CSD06060
CSD10060
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CSD06060A
Abstract: cree Sic reliability cree 155C CSD10060A schottky diode FIT powerdio
Text: SiC Power Diode Reliability SiC Schottky Diode Reliability September 2006 March 2006 SiC Power Diode Reliability September 2006 Dr. Allan Ward, Manager, Advanced Device Reliability ABSTRACT Cree introduced its ZERO RECOVERY line of SiC power rectifiers three years ago
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CPWR-RS03,
CSD06060A
cree Sic
reliability cree
155C
CSD10060A
schottky diode FIT
powerdio
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BAR66
Abstract: BA592 BA595 BA597 BA885 BAR14 BAR63-03W BAR64 BAR65-03W
Text: Application Note No. 058 Silicon Discretes Dr. Reinhard Gabl Predicting Distortion in Pin-Diode Switches This note describes the origin of distortion in pin-diode switches. Distortion is related to physical parameters of the diode and operating conditions and thus can be minimized by an appropriate diode
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dr25 diode specifications
Abstract: DR25 Diode OP 741 L6690 free download led wiring guide LLD1002E01
Text: INFRARED PULSED LASER DIODE L6690 Figure 2: Typical Radiant Power vs. Pulsed Forward Current INFRARED PULSED LASER DIODE Ta=25℃ (Ta=25℃) 100 RELATIVE RADIANT POWER (%) 2.5 ep 2.0 1.5 1.0 0.5 1.0 1.5 2.0 2.5 40 20 830 3.0 ●High duty ratio (DR≦2.5%)
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L6690
dr25 diode specifications
DR25 Diode
OP 741
L6690
free download led wiring guide
LLD1002E01
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453gb12e4s
Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1
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AN-9001
453gb12e4s
SEMIX 71GD12E4S
300gb12e4
igbt cross-reference
SKM200GB128D
SEMiX 202GB12E4s
SEMiX453GB12E4
101GD12E4s
IGBT cross reference semikron
303GD12E4-c
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Laser Diode for cutting
Abstract: No abstract text available
Text: INFRARED PULSED LASER DIODE L6690 PRELIMINARY DATA FEATURES High duty ratio DR 2.5 % High speed rise time (tr=0.5 ns typ.) APPLICATIONS Laser rader Range finder Excitation light source Optical trigger Security barrier Figure 1: Dimensional Outline (Unit: mm)
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L6690
SE-171-41
LLD1002E03
Laser Diode for cutting
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lateral junction semiconductor OLED
Abstract: oled flexible screen Indium tin oxide Indium tin oxide index oleds
Text: OLED Application Engineering Contact: Dr. Christoph Gärditz christoph.gaerditz@osram-os.com OLED Technology Introduction An organic light emitting diode (OLED) consists of several semiconducting organic layers sandwiched between two electrodes at least one of them being transparent. A simplified
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DR1300
Abstract: FTD1300
Text: DIODE TRIO LUCAS TYPE Data Sheet Mechanical Dimensions Description DR-1300 Dimensions in inches and millimeters Features Mechanical Data ¬ Low forward voltage drop ¬ Case: OFC Heat Sink ¬ High current capability ¬ Encap: Epoxy Sealed Rated ¬ High reliability
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DR-1300
UL94V-0
80Amp
FTD1300
DR1300
FTD1300
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mss60.341
Abstract: n10 diode N092 SCHOTTKY DIODE BRIDGE mss60 Diode DR 25 PCR46 dr 25 diode MSS25 MSS40
Text: Spice Models for Metelics Schottky Diodes 1 of 6 The standard diode model found in Spice Ver 2 does not correctly model the reverse bias characteristics of Metelics’ Schottky diodes. To correct this problem, use the macromodel shown below. DR Anode Cathode
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PCR46
MSS60
PCR53
0E-12
SMST3012
MSS30
SMST4012
MSS40
SMST6012
mss60.341
n10 diode
N092
SCHOTTKY DIODE BRIDGE
Diode DR 25
PCR46
dr 25 diode
MSS25
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Untitled
Abstract: No abstract text available
Text: INFRARED PULSED LASER DIODE L6690-53 PRELIMINARY DATA FEATURES High speed rise time tr 2 ns typ. Output Power : 10 W (at DR=0.05 %) MTTF 20000hrs Compact APPLICATIONS Laser rader Range finder Optical trigger Security barrier Figure 1: Dimensional Outline (Unit: mm)
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L6690-53
20000hrs
SE-171-41
LLD1023E01
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Untitled
Abstract: No abstract text available
Text: INFRARED PULSED LASER DIODE L6690-53 PRELIMINARY DATA FEATURES High speed rise time tr 2 ns typ. Output Power : 10 W (at DR=0.05 %) MTTF 20000hrs Compact APPLICATIONS Laser rader Range finder Optical trigger Security barrier Figure 1: Dimensional Outline (Unit: mm)
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L6690-53
20000hrs
SE-171-41
LLD1023E02
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Untitled
Abstract: No abstract text available
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-PLCC-DR Features Description !SINGLE COLOR. The Super Bright Red source color devices are made with !SUITABLE FOR ALL SMT ASSEMBLY AND SOLDER Gallium Aluminum Arsenide Red Light Emitting Diode.
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1500PCS
DEC/05/2002
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zener spice model
Abstract: No abstract text available
Text: DE3S062D Spice Parameter Reference Total pages page 1 1 Device symbol Product name: DE3S062D Product type: Zener Diode 3 1 2 Parameters * cathode1 * | anode1, anode2 * | | cathode2 * | *$ .SUBCKT DE3S062D 1 3 2 D11 3 2 DF D12 2 p DR V1 p 3 0.002 D21 3 1 DF
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DE3S062D
DE3S062D
2901E-15
06E-12
001E-13
108E-2
0E-13
zener spice model
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DZ2J100
Abstract: No abstract text available
Text: DZ2J100 Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DZ2J100 Product type: Zener Diode Parameters *DEVICE=DZ2J100,D * DZ2J100 D model *$ .SUBCKT DZ2J100 A K D1 A K DF DZ K 1 DR V1 1 A 0.01 .MODEL DF D + IS=1.1985E-15 + N=1.025
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DZ2J100
DZ2J100
1985E-15
43E-3
043E-12
00E-3
0000E-9
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DZ2S068
Abstract: DZ2S Diode DR 25
Text: DZ2S068 Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DZ2S068 Product type: Zener Diode Parameters *DEVICE=DZ2S068,D * DZ2S068 D model *$ .SUBCKT DZ2S068 A K D1 A K DF DZ K 1 DR V1 1 A 0.002 .MODEL DF D + IS=1.3073E-15 + N=1.0628
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DZ2S068
DZ2S068
3073E-15
665E-12
0E-13
108E-2
5E-13
DZ2S
Diode DR 25
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DZ2J082
Abstract: N1055 DZ2J RS01 n159
Text: DZ2J082 Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DZ2J082 Product type: Zener Diode Parameters *DEVICE=DZ2J082,D * DZ2J082 D model *$ .SUBCKT DZ2J082 A K D1 A K DF DZ K 1 DR V1 1 A 0.002 .MODEL DF D + IS=2.2005E-15 + N=1.0557
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DZ2J082
DZ2J082
2005E-15
1861E-3
855E-12
4E-10
11E-15
N1055
DZ2J
RS01
n159
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DZ2J030
Abstract: dr 25 diode
Text: DZ2J030 Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DZ2J030 Product type: Zener Diode Parameters *DEVICE=DZ2J030,D * DZ2J030 D model *$ .SUBCKT DZ2J030 A K D1 A K DF DZ K 1 DR V1 1 A 0.002 .MODEL DF D + IS=1.2641E-15 + N=1.0575
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DZ2J030
DZ2J030
2641E-15
630E-12
6459E-9
678E-6
dr 25 diode
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DR-5V
Abstract: fld3c2pj Fujitsu FLD5F6CX FLD5F6CX fld3f fujitsu fld3f8lk FLD148G3NL FLD5F8 FLD3F6CX FLD5F*cx
Text: LIGHTWAVE COMPONENTS & MODULES LASER DIODE MODULES OPTICAL AND ELECTRICAL CHARACTERISTICS TL = 25°C or Tc = 25°C Part Number Ith (mA) Vf (V) CW CW (typ.) lF= Pf Pth (mW) (mW) CW (min.) CF=lth) CW at Pf V DR=5V - 0.2 - (•F=lop Vm=0) CW 'op(Pf) FLD148G3NL-B
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14-pin
FLD148G3NL-B
500mA)
DR-5V
fld3c2pj
Fujitsu FLD5F6CX
FLD5F6CX
fld3f
fujitsu fld3f8lk
FLD148G3NL
FLD5F8
FLD3F6CX
FLD5F*cx
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DS0352
Abstract: No abstract text available
Text: witches 40E D DAICO I N DU ST RIE S INC SbOH TS G 00015^7 & TOT IDAI T - s i - Volume 2 Issue 2 SP2TPin Diode Switch Model No. DS0352 OPERATING CHARACTERISTICS CU RR EN T DR AI N 15 25 TYPICAL PERFORMANCE mA A T +5 VDC SUPPLY INTE RC EP T POINT, 2ND +72 d 8m
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DS0352
10V90JS
DS0352
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Untitled
Abstract: No abstract text available
Text: FEATURES • 0.5 dB Insertion Loss ■ TTL Driver DPDT MODEL NO. dr ■ 2 0 - 7 0 0 MHz DS0519 PIN Diode DPDT ■ Small TO-8 Package ■ Low Cost ■ Cascadable Building Block For Attenuators And Phase Shifters TEST CONFIGURATION Y EXTERNAL BLOCKING CAPACITORS REQUIRED
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DS0519
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Untitled
Abstract: No abstract text available
Text: STV7617D STV7617U PLASMA D SPLAY PANEL SCAN DR VER PRELIM IN ARY DATA • 64/65 SELECTABLE OUTPUT PLASMA DIS PLAYDRIVER ■ 100V ABSOLUTE MAXIMUM SUPPLY ■ 5V SUPPLY FOR LOGIC ■ 100/700mASOURCE/SINK OUTPUT ■ 700mASOURCE/SINK OUTPUT DIODE ■ 65-BIT BIDIRECTIONAL SHIFT REGISTER
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STV7617D
STV7617U
100/700mASOURCE/SINK
700mASOURCE/SINK
65-BIT
100-PIN
STV7617
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Untitled
Abstract: No abstract text available
Text: y a .y h dr/s: lj K Surface Mounting^Deviœ Schottky Barrier Diode Twin Diode •W fêvhÆ E ] DF30PC3M OUTLINE DIMENSIONS Case : STO-220 30V 30A •S M D • ¡B ffiV F = 0 .4 V m ffl i î • A '> x U - i ï S K ± • D C tÜ ^ O R ffl • D C / D C n v A — 5>
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DF30PC3M
STO-220
00D32A5
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Untitled
Abstract: No abstract text available
Text: FEATURES MODEL NO. DS0506 dr • 100-600 MHz ■ 0.6 dB Insertion Loss ■ Handles +25 dBm PIN Diode SP6T ■ 250 nSec Switching Speed ■ Non-Reflective ■ TTL Driver ■ 38 Pin DIP PART IDENTIFICATIO N L ^ 2 0 V T 018 DIA LEAD 2 6 CONT1 ! " 0" 14 3 1 5 7 8 9 11 12 1315 19
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DS0506
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