SD-46 Diode
Abstract: Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006
Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE
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5V/10A)
500ns,
SD-46 Diode
Schottky 30A 40v
schottky diode 60V 5A
diode
Schottky Diode 20V 5A
Schottky Diode 40V 2A
5A schottky
60V 3A diode
ERA81-004
ERA83-006
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tms44c256
Abstract: SMALL SIGNAL SCHOTTKY DIODE "Schottky Diode" diode arrays line following CIRCUIT Schottky Diode 74AC11240 SN74S1050 TMS4256
Text: EB194E Schottky Diode Arrays EB194E SCHOTTKY DIODE ARRAYS Author: Eilhard Haseloff Date: October 10th, 1990 Rev.: A Revised August 30th, 1995 1 Applikationslabor EB194E Schottky Diode Arrays The trend towards faster and faster systems means that the circuit designer has to
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EB194E
tms44c256
SMALL SIGNAL SCHOTTKY DIODE
"Schottky Diode"
diode arrays
line following CIRCUIT
Schottky Diode
74AC11240
SN74S1050
TMS4256
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DZ800S17K3
Abstract: FF800R17KE3
Text: Technische Information / technical information DZ800S17K3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Emitter Controlled³ Diode 62mm C-series module with Emitter Controlled³ diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data
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DZ800S17K3
DZ800S17K3
FF800R17KE3
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MOZ 23
Abstract: DD1000S33HE3 48 H diode
Text: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values
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DD1000S33HE3
MOZ 23
DD1000S33HE3
48 H diode
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DD1000S33
Abstract: FZ1000R33HE3
Text: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values
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DD1000S33HE3
DD1000S33
FZ1000R33HE3
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DZ800S17K3
Abstract: No abstract text available
Text: Technische Information / technical information DZ800S17K3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit EmCon3 Diode 62mm C-series module with EmCon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values
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DZ800S17K3
DZ800S17K3
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IDG 600
Abstract: M61880FP 20P2N-A M61880
Text: M61880FP Laser Diode Driver/Controller REJ03F0068-0100Z Rev.1.0 Sep.19.2003 Description The M61880FP is a laser diode driver/controller that performs drive and laser power control of a type of semiconductor laser diode in which the semiconductor laser diode anode and monitoring photodiode cathode are connected to the stem.
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M61880FP
REJ03F0068-0100Z
M61880FP
IDG 600
20P2N-A
M61880
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BULD125KC
Abstract: electronic ballast with npn transistor
Text: BULD125KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts ● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability ● Diode trr Typically 1 µs
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BULD125KC
O-220
BULD125KC
electronic ballast with npn transistor
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT Diode Module with Chopper-IGBT DD B6U 100 N 16 RR Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Netz-Diode / Rectifier diode Periodische Spitzensperrspannung
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DD B6U 84 N 16 RR
Abstract: No abstract text available
Text: Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT Diode Module with Chopper-IGBT DD B6U 84 N 16 RR Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Netz-Diode / Rectifier diode Periodische Spitzensperrspannung
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BULD85KC
Abstract: "Safe Operating Area and Thermal Design" silicon
Text: BULD85KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts ● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability ● Diode trr Typically 1 µs
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BULD85KC
O-220
BULD85KC
"Safe Operating Area and Thermal Design" silicon
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT Diode Module with Chopper-IGBT DD B6U 100 N 16 RR Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Netz-Diode / Rectifier diode Periodische Spitzensperrspannung
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT Diode Module with Chopper-IGBT DD B6U 84 N 16 RR Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Netz-Diode / Rectifier diode Periodische Spitzensperrspannung
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T1 SL 100 NPN Transistor
Abstract: SL 100 NPN Transistor BULD50SL BULD50KC
Text: BULD50KC, BULD50SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts ● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability ● Diode trr Typically 1 µs
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BULD50KC,
BULD50SL
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T1 SL 100 NPN Transistor
SL 100 NPN Transistor
BULD50SL
BULD50KC
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung
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diode
Abstract: DD400S17K6CB2
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung
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EBF83
Abstract: EN50011 Scans-0017839 CD2A battery operated cdi 2235S
Text: PH ILIPS EBF83 DOUBLE-DIODE PENTODE for use as I.F. amplifier, detector and A.G.C. diode in carradio sets. The tube can be directly operated from a 6 V or 12 V storage battery DOUBLE-DIODE PENTHODE pour l'utilisation comme amplificateur MF, comme détecteur et corne diode de C.A.V. dans récepteurs
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EBF83
7R05998
7R05S99
EBF83
EN50011
Scans-0017839
CD2A
battery operated cdi
2235S
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schema
Abstract: No abstract text available
Text: EBC 3 DUO-DIODE TRIODE De duo-diode-triode EBC 3 is een com binatie van een triode en tw ee dioden m et een gem eenschappelijke kathode. H et diode-systeem k an dienen voor signaaldetectie en voor vertraagde autom atische geluidssterkte-regeling; h et triode-gedeelte kan gebruikt
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20-voudig.
schema
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powerex MEB0
Abstract: No abstract text available
Text: « — M EB00806 — P iw erex, Inc., 200 Hillls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 T h tß e -P h a S B Diode Bridge Module 60 Amperes/800 Volts Description: MEB00806 Three-Phase Diode Bridge Module 60 Amperes/800 Volts Powerex Three-Phase Diode
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EB00806
Amperes/800
MEB00806
EB00806
1Amperes/800
powerex MEB0
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38he7
Abstract: a 1964 bp 3125 general electric
Text: 38HE7 Page 1 38HE7 ELECTRONICS COMPACTRON DIODE-PENTODE DESCRIPTION AND RATING The 38HE7 is a compactron containing a high-perveance diode and a beam-power pentode. The diode is intended for service as the damping diode and the pentode as the horizontaldeflection amplifier in television receivers.
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38HE7
38HE7
K-556II-TD250-5
a 1964
bp 3125
general electric
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condensator
Abstract: schema diode EB 29 relais schema effec DOOR
Text: DUO-DIODE 4 De duo-diode EB 4 is een dubbele diode m et onderling gescheiden kathoden, die ieder een afzonderlijke anode hebben. De tw ee system en zijn gescheiden door een scherm , dat aan een afzonderlijk contact van de huis is verbonden. H et scherm k an n u direct m et aarde verbonden w orden, w aardoor wederzijdsche
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38HK7
Abstract: 38hk7 tube td301 bp 3125 i437 general electric
Text: PRODUCT INFORMATION Page 1 Compactron Diode-Pentode TUBES The 38HK7 is a compactron containing a high-perveance diode and a beam-power p e n t o d e . The diode is intended for service as the damping diode and the pentode as the horizontal-deflection amplifier in television receivers.
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38HK7
38HK7
K-55611-TD301-4
K-55611-TD301-5
38hk7 tube
td301
bp 3125
i437
general electric
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BUL791
Abstract: BULD125KC TO-5 PACKAGE case for transistor
Text: c f AN SYS BULD125KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE IUCTROMICS LIMITED Designed Specifically for High Frequency Electronic Ballasts Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability Diode t rr Typically 1 TO-220 PACKAGE TOP VIEW
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BULD125KC
T0220
BUL791
BULD125KC
TO-5 PACKAGE case for transistor
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BULD85KC
Abstract: No abstract text available
Text: « JÜAN SYS fUCTROMGS LIMITED BULD85KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE • Designed Specifically for High Frequency Electronic Ballasts • Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability • Diode t rr Typically 1 TO-220 PACKAGE
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BULD85KC
T0220
BULD85KC
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