marking ya
Abstract: 3tb 40 15X15 SC802-04 marking 6Ct marking eb sc802
Text: SC802-04 1 .OA • Outline Drawing SCHOTTKY BARRIER DIODE ■ Features I Marking • Surface mount device • Lo w V f -CATHODE MARKING - SYMBOL • Super high speed switching • High reliability by planer design /I ■ EB 1 141 - MONTH
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SC802-04
500ns,
marking ya
3tb 40
15X15
SC802-04
marking 6Ct
marking eb
sc802
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PDF
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Untitled
Abstract: No abstract text available
Text: HGTP1N120BND, HGT1S1N120BNDS S e m iconductor D ata S h eet F eb ru ary 1999 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP1N120BND,
HGT1S1N120BNDS
HGTP1N120BND
HGT1S1N120BNDS
TA49316.
RHRD4120
TA49056)
O-220AB
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PDF
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Untitled
Abstract: No abstract text available
Text: FEATU RES eb • 5 - 4 0 0 MHz ■ 3 nSec 10% / 9 0 % RF Transition ■ 9 nSec Switching Speed MODEL NO. DS0950 Schottky Diode SPST ■ 60 dB Isolation ■ Non-Reflective ■ 14 Pin DIP C O N T R A S T IN G CO LO R BEA D OC OD £ 3 .*« = .02 .xxx = .010 TYPICAL PERFORMANCE
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DS0950
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM800HA-24B HIGH POWER SWITCHING USE INSULATED TYPE QM800HA-24B lc Collector current. 800A Vcex Collector-emitter vo ltag e 1200V hFE DC current gain.750 Insulated Type UL Recognized
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QM800HA-24B
E80276
E80271
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PDF
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PC87307
Abstract: PC97307 GERMANIUM DIODE
Text: SuperI/O PC97307-ICE/EB Release Letter Part Number: 433521688-801 February 1998 2 1998 National Semiconductor Corporation PREFACE This release letter describes the PC97307-ICE Evaluation Board PC97307-ICE/EB which is designed to verify the I/O functions of the PC97307-ICE/VUL chip.
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PC97307-ICE/EB
PC97307-ICE
PC97307-ICE/EB)
PC97307-ICE/VUL
PC87307EB
PC87307
PC97307
GERMANIUM DIODE
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PDF
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Untitled
Abstract: No abstract text available
Text: Extract from the online catalog DEK-OV- 24DC/240AC/800 Order No.: 2964649 Power optocoupler terminal block, input: 24 V DC, output: 10-253 V AC/800 mA, terminal width 6.2 mm Product notes
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24DC/240AC/800
AC/800
IF-2009)
24DC/240AC/800
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Untitled
Abstract: No abstract text available
Text: Extract from the online catalog DEK-OV- 5DC/240AC/800 Order No.: 2964623 Power optocoupler terminal block, input: 5 V DC, output: 10-253 V AC/800 mA, terminal width 6.2 mm Product notes
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5DC/240AC/800
AC/800
IF-2009)
5DC/240AC/800
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PDF
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Untitled
Abstract: No abstract text available
Text: Extract from the online catalog DEK-OV- 24DC/240AC/800 Order No.: 2964649 Power optocoupler terminal block, input: 24 V DC, output: 10-253 V AC/800 mA, terminal width 6.2 mm Product notes
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24DC/240AC/800
AC/800
IF-2009)
24DC/240AC/800
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PDF
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Untitled
Abstract: No abstract text available
Text: Extract from the online catalog DEK-OV- 12DC/240AC/800 Order No.: 2964636 Power optocoupler terminal block, input: 12 V DC, output: 10-253 V AC/800 mA, terminal width 6.2 mm Product notes
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12DC/240AC/800
AC/800
IF-2009)
12DC/240AC/800
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PDF
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Untitled
Abstract: No abstract text available
Text: Extract from the online catalog DEK-OV- 5DC/240AC/800 Order No.: 2964623 Power optocoupler terminal block, input: 5 V DC, output: 10-253 V AC/800 mA, terminal width 6.2 mm Product notes
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Original
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5DC/240AC/800
AC/800
IF-2009)
5DC/240AC/800
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PDF
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Untitled
Abstract: No abstract text available
Text: Extract from the online catalog DEK-OV- 24DC/240AC/800 Order No.: 2964649 Power optocoupler terminal block, input: 24 V DC, output: 10-253 V AC/800 mA, terminal width 6.2 mm Product notes
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24DC/240AC/800
AC/800
IF-2009)
U715953
24DC/240AC/800
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PDF
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Untitled
Abstract: No abstract text available
Text: SK 80 MD 055 Absolute Maximum Ratings Symbol Conditions MOSFET 0 ## 01## 4 4 % + /- . + /- ,3 .5 6 9 6 5 + /- ,3 .5 < Values Units -2 /3 667 ,7 /:; 67; 8 8 ! ;3 = > 6-3 . 667 ,7 /:; 67; 8 8 ! ;3 = > 6-3
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Untitled
Abstract: No abstract text available
Text: SK 80 MD 055 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0 ## 01## 4 4 % + /- . + /- ,3 .5 6 9 6 5 + /- ,3 .5 < Values Units -2 /3 667 ,7 /:; 67; 8 8 ! ;3 = > 6-3 . 667 ,7 /:; 67;
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NAIS Relay s2 12v
Abstract: relay 12v 100A Nais S2 -12V RELAY NAIS Relay 12v nais relay 12V r relay nais relay S2 NAIS Relay 18v 2M236 nais relay AEB310012
Text: EB AEB COMPACT BUT CUT OFF DC POWER CURRENT, POWER CAPSULE CONTACT RELAY. 70 2.756 80 3.150 34 1.339 100A type EB RELAYS (AEB) FEATURES TYPICAL APPLICATIONS • Compact and high capacity using double contacts in series and permanent magnet installed. (1,000A/3 times) cut-off possible
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00A/3
NAIS Relay s2 12v
relay 12v 100A
Nais S2 -12V RELAY
NAIS Relay 12v
nais relay 12V r relay
nais relay S2
NAIS Relay 18v
2M236
nais relay
AEB310012
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM800HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM800HA-2HB lc Collector current. 800A Vcex Collector-emitter vo ltag e 1000V hFE DC current gain.750 Insulated Type UL Recognized
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QM800HA-2HB
E80276
E80271
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PDF
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Untitled
Abstract: No abstract text available
Text: Technical Information ModSTACK 6MS2400R17KE3-3G-C20VTIN Vorläufige Daten preliminary data Key data 3x 800A rms at 400V rms, forced air fan not implemented General information Stacks for various inverter application. Semiconductors, heat sinks, capacitors, drivers and
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6MS2400R17KE3-3G-C20VTIN
3564E26.
1231423567896AB3C736DCEF32
4112BF3567896
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM80DY-3H HIGH POWER SWITCHING USE INSULATED TYPE Q M 80DY-3H lc Collector current. 80A Vcex Collector-emitter voltage 1400V hFE DC current gain. 100 Insulated Type UL Recognized
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QM80DY-3H
80DY-3H
E80276
E80271
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PDF
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Westinghouse diode
Abstract: powerex cd ks2245
Text: 72^21 OODDÛTT 0 Single Darlington TRANSISTO R Modules Dim A B C D E F G H K M Inches 3.700 Max 3.150+ .020 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 A" ~\ T-33-35 10 0 Amperes 4 5 0 /1 0 0 0 Volts Millimeters 94 Max 80 ± 0 .5 20 M 5 x1 0 34 Max 27 8 31 Max
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T-33-35
KS22451010.
KS22451010
KS221K1010
KS22451010
Westinghouse diode
powerex cd
ks2245
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PDF
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980021-44-01
Abstract: LM16155 itt 2907A 80186EB d431008le d431008 D03316P-104 lcd inverter board schematic SO28W 74ac14 philips
Text: Intel 186 EB/EC Evaluation Board User’s Manual 80C186EC/80C188EC 80L186EC/80L188EC and 80C186EB/80C188EB 80L186EB/80L188EB March 1997 Order Number: 272986-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of Sale
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80C186EC/80C188EC
80L186EC/80L188EC
80C186EB/80C188EB
80L186EB/80L188EB
iECM-86
980021-44-01
LM16155
itt 2907A
80186EB
d431008le
d431008
D03316P-104
lcd inverter board schematic
SO28W
74ac14 philips
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PDF
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Untitled
Abstract: No abstract text available
Text: Technical Information ModSTACK 6MS2400R17KE3-3G-C20MVTIOIN Vorläufige Daten preliminary data Key data 3x 800A rms at 400V rms, forced air fan not implemented General information Stacks for various inverter application. Semiconductors, heat sinks, capacitors, drivers and
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Original
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6MS2400R17KE3-3G-C20MVTIOIN
3564E26.
1231423567896AB3C736DCEF32
4112BF3567896
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH600 SERIES TRIOS * PHOTOTRANSISTOR OPTOCOUPLER FEATURES • High Current Transfer Ratios SFH600-0,40 to 80% SFH600-1, 63 to 125% SFH600-2,100 to 200% SFH600-3,160 to 320% • Isolation Test Voltage 1 Sec. , 5300 VACRMS • VCEsat 0.25 (£0.4) V, IF=10 mA, IC=2.5 mA
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SFH600-0
SFH600-1,
SFH600-2
SFH600-3
E52744
SFH600
SFH600-1
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PDF
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diode EB
Abstract: No abstract text available
Text: Extract from the online catalog EIK1-SVN-24P Order No.: 2940799 Switching amplifier electronic terminal block, for inductive proximity sensors acc. to NAMUR, with light indicators for sensor signal and
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EIK1-SVN-24P
IF-2009)
EIK1-SVN-24P
diode EB
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PDF
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red red green zener diode
Abstract: diode EB 24 EIK1-SVN-24P LIMIT SWITCH namur application 3.6 v zener diode diode EB 80
Text: Extract from the online catalog EIK1-SVN-24P Order No.: 2940799 Switching amplifier electronic terminal block, for inductive proximity sensors acc. to NAMUR, with light indicators for sensor signal and
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EIK1-SVN-24P
IF-2009)
EIK1-SVN-24P
red red green zener diode
diode EB 24
LIMIT SWITCH namur application
3.6 v zener diode
diode EB 80
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PDF
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8G0V
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM80DY-3H HIGH POWER SWITCHING USE INSULATED TYPE Q M 80D Y-3H • 1C Collector c u rre n t. 80A • V cex Collector-em itter • hre DC current g a in .100 . v o lta g e 1 400V
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QM80DY-3H
E80276
E80271
8G0V
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PDF
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