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    DIODE ED 26 Search Results

    DIODE ED 26 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE ED 26 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    hp11612a

    Abstract: anzac power divider HP8565A HP83595A HP8565 HP436A HP8640B Microwave PIN diode pin diode microstrip 0805Z473
    Text: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mount‑ ed PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is gen‑


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    5091-4932E 5966-0780E order50 hp11612a anzac power divider HP8565A HP83595A HP8565 HP436A HP8640B Microwave PIN diode pin diode microstrip 0805Z473 PDF

    LN189S

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 5.0±0.3 6.0±0.3 3.4±0.2 3.0±0.2 4.0± 0.15 1.0 0.6 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo


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    LN189S LN189S PDF

    LN189L

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 5.0±0.3 6.0±0.3 3.4±0.2 3.0±0.2 4.0±0.15 1.0 0.6 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol


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    LN189L LN189L PDF

    ED 05 Diode

    Abstract: ED 03 Diode
    Text: MITSUBISHI FAST RECOVERY DIODE MODULES RM25HG-24S HIGH SPEED SWITCHING USE NON-INSULATED TYPE ed RM25HG-24S DC current . 25A Repetitive peak reverse voltage . 1200V • trr Reverse recovery time . 0.3µs


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    RM25HG-24S 20MIN. ED 05 Diode ED 03 Diode PDF

    ED 05 Diode

    Abstract: ED 03 Diode
    Text: MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE ed RM50HG-12S DC current . 50A Repetitive peak reverse voltage . 600V • trr Reverse recovery time . 0.2µs


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    RM50HG-12S 20MIN. ED 05 Diode ED 03 Diode PDF

    fire detector

    Abstract: 100HZ 1U20 47PF GL1F201 IS1U20
    Text: PREPARED BY: I DATE: SPEC No. ,-. ED-95093 ,. OPTO-ELEtiC @”C DEVICES DW.”. SPECIFICATION / \ DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. GL1F201 \ 1. These specification sheets include the contents under the copyright of Sharp Corporation “Sharp”).


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    ED-95093 GL1F201 fire detector 100HZ 1U20 47PF GL1F201 IS1U20 PDF

    X9522

    Abstract: X9522V20I-A X9522V20I-B X9522V20IZ-A X9522V20IZ-B
    Text: I GNS DE S W E T OR N DUC ED F TE PRO 9520 D N TITU 2329, X MME ECO E SUBS ISData L2 Sheet R T 26, NO I BL 3 S 2 S 2 PO SL 20, I X958 X9522 Laser Diode Control for Fiber Optic Modules January 3, 2006 FN8208.1 DESCRIPTION Triple DCP, Dual Voltage Monitors


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    X9520 L22329 X9522 FN8208 X9522 X9522V20I-A X9522V20I-B X9522V20IZ-A X9522V20IZ-B PDF

    LN66

    Abstract: LN66L
    Text: Infrared Light Emitting Diodes LN66L LN66(L GaAs Infrared Light Emitting Diode Unit : mm M Di ain sc te on na tin nc ue e/ d 1.0 7.65±0.2 For optical control systems Not soldered 2.25 ø5.0±0.2 Features ue pl d in an c se ed lud pl vi an m m es si tf


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    LN66L LN66 LN66L PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C


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    MGP11 N60ED/D MGP11N60ED/D PDF

    Untitled

    Abstract: No abstract text available
    Text: Transmissive Optoswitch VTL23G2B, 23G3B Slotted Switch - Schmitt Output PRODUCT DESCRIPTION This series of interrupter type transm issive optoswitches com bines an infrared emitting diode IR ED with a TTL compatible, Schmitt output, photo 1C detector in an opaque plastic case with


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    VTL23G2B, 23G3B PDF

    CLM185T2

    Abstract: CLM285T2 CLM285Y2 CLM385N2 CLM385T2 CLM385Y2 120PV
    Text: Micropower Voltage Reference Diode C Q IO Q IC CO RPO RATIO N v CLM185-2.5 / CLM285-2.5/ CLM385-2.5 FEATURES ORDERING INFORMATION • Operating C u rre n t. 20 |M - 20mA • Dynamic Im p ed an ce . 1Q


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    CLM185-2 CLM285-2 CLM385-2 CLM185 20yiA CLM185T2 CLM285T2 CLM285d. 4432E CLM285Y2 CLM385N2 CLM385T2 CLM385Y2 120PV PDF

    hb5-132

    Abstract: S370 S370 UDT
    Text: VISIB LE LIG HT PRODUCTS Light Emitting Diode REV:B DATE:2005/4/26 iDEVICE NO:HB5-132 (H i-R ed ) iLE N S COLOR: V colored diffusion white diffusion colored transparent water clear iPACKAGE DIMENSIONS: NOTE: 1 .All dimensions are In millimeter. 2 .Lead spacing In measured where the


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    HB5-132 hb5-132 S370 S370 UDT PDF

    6bv8

    Abstract: diode 12-55 c capacitor RGF general electric RK 1900
    Text: 6BV8 ET-T981 Page 1 6BV8 TUBES 12-55 DUPLEX-DIODE TRIODE DESCRIPTION AND RATING T h e 6 B V 8 is a m iniature duplex-diode m ed ium -m u triode in w hich separate cathode an d plate connections are provided for each diode section. T h e tube is intended p rim a rily for service as a com bined syn ch ron ou s detector and


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    ET-T981 600-milliampere 6bv8 diode 12-55 c capacitor RGF general electric RK 1900 PDF

    PS2002B

    Abstract: PS2002 transistor replacement 0z99
    Text: NEC PHOTO COUPLER BfCTRON OEVICE PS2002B PHOTO CO U PLER IN D U ST R IA L U SE -N EP O C SERIES - DESCRIPTION The PS2002B is an optically coupled isolator containing a GaAsP light emitting diode and an NPN silicon darlington- connect­ ed phototransistor.


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    PS2002B PS2002B -L50- 2500VDC 100ft 100il Ul/10 PS2002 transistor replacement 0z99 PDF

    Untitled

    Abstract: No abstract text available
    Text: AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED121/122/123 DESCRIPTION PACKAGE DIMENSIONS T h e Q ED 12X is an 880 AIGaAs LED encapsulated in a clear, peach tinted, plastic T-1% package. FEATURES • Tight production E- distribution. ■ Steel lead fram es for im proved reliability in solder


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    QED121/122/123 ST2132 PDF

    Untitled

    Abstract: No abstract text available
    Text: eVERJLIGHT EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Light Emitting Diode 5 m m R ound L ED ,T -1 3/4 7343-2UBGC/MB Features • Popular T -l 3/4 diameter package. • Choice o f various viewing angles. • Available on tape and reel. • Reliable and robust.


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    7343-2UBGC/MB B91010370 R19103039 DLE-734-018 PDF

    Untitled

    Abstract: No abstract text available
    Text: eVERJLIGHT EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Light Emitting Diode 5 m m R ound L ED ,T -1 3/4 7343-2SURC/S406 Features • Popular T-l 3/4 diameter package. • Choice of various viewing angles. • Available on tape and reel. • Reliable and robust.


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    7343-2SURC/S406 B91010216 R19102030 DLE-734-016 PDF

    rover

    Abstract: J1000
    Text: SPEb^fo. / ED-Q2Û78 , x . ISSUE Maiçh;i8,20Q2 SHARP OPTOELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. G L 100M N 0M P1M Specified for Enclosed please find copies of the Specifications which consists of 14 pages including cover.


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    ED-Q2078 GL100MN0MP1M GL100MN0MP1M rover J1000 PDF

    Untitled

    Abstract: No abstract text available
    Text: eVERJLIGHT EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Light Emitting Diode 5 m m R ound L ED ,T -1 3/4 7343-2UBGC/C505 Features • Popular T-l 3/4 diameter package. • Choice of various viewing angles. • Available on tape and reel. • Reliable and robust.


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    7343-2UBGC/C505 DLE-734-015 PDF

    ip olivetti cd

    Abstract: GL100MD1MP1 GL100MD1
    Text: SPEC. No. ED-02157 ISSUE June 21,2002 SH A R P OPTO-ELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION i " DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. Specified for GL100MD1MP1 Olivetti Enclosed please find copies o f the Specifications which consists o f 14 pages including cover.


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    ED-02157 GL100MD1MP1 ip olivetti cd GL100MD1 PDF

    2SC1254

    Abstract: JIS C7021 B-11 led Concave RS510
    Text: LED Structure, Characteristics and Operation | CHARACTERISTICS I LED BASIC STRUCTURE T h e LED Light E m itting Diode chip h as an internal P-N junction, and an electrode is provided on each surface of the chip to m ake ohm ic contact. T he P-N junction is form ed by


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    C7021 90-degree JIS-C7021 2SC1254 JIS C7021 B-11 led Concave RS510 PDF

    IS44

    Abstract: No abstract text available
    Text: PRODUCT INFORMATION 13Ô0rtm 1550»,* 8C443 Datacom, Telecom RN/Preamp This device consists of a PIN photo­ diode and a transimpedance amplifier assembled in a TO-46 package. It is design ed for FD D I, ATM and SD H /Sonet up to 155 Mbps. The AGC A utom atic Gain Control


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    8C443 IS44 PDF

    LG direct drive motor

    Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
    Text: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W


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    4101B MII-H-38534 LG direct drive motor 600v 20 amp mosfet transistor tl 11C mosfet PDF

    stetron

    Abstract: No abstract text available
    Text: V A R IS TO R ^^v , , .' , '’ -V y * ; $ h \ } T •'•'•. ' ■ ■ ?‘- - * ■ . . ■ % Diffused Junction Silicon Types and Sili.çon Carbide Types D IFFU S ED J U N C T IO N S ILIC O N VA R IS TO R S STETRON diffused junction Silicon varistors are special diode


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    VT60D\SICVAR SDL-080-131 SDL-098-231 100mA: stetron PDF