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    DIODE ED 35 Search Results

    DIODE ED 35 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE ED 35 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hp11612a

    Abstract: anzac power divider HP8565A HP83595A HP8565 HP436A HP8640B Microwave PIN diode pin diode microstrip 0805Z473
    Text: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mount‑ ed PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is gen‑


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    PDF 5091-4932E 5966-0780E order50 hp11612a anzac power divider HP8565A HP83595A HP8565 HP436A HP8640B Microwave PIN diode pin diode microstrip 0805Z473

    LN66

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN66 GaAs Infrared Light Emitting Diode Unit : mm M Di ain sc te on na tin nc ue e/ d 7.65±0.2 For optical control systems Not soldered ø5.0±0.2 Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l


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    fire detector

    Abstract: 100HZ 1U20 47PF GL1F201 IS1U20
    Text: PREPARED BY: I DATE: SPEC No. ,-. ED-95093 ,. OPTO-ELEtiC @”C DEVICES DW.”. SPECIFICATION / \ DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. GL1F201 \ 1. These specification sheets include the contents under the copyright of Sharp Corporation “Sharp”).


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    PDF ED-95093 GL1F201 fire detector 100HZ 1U20 47PF GL1F201 IS1U20

    edfa

    Abstract: No abstract text available
    Text: MITSUBISHI OPTICAL DEVICES FU-630SLD-8M1/10M1/12M1 1.48 mm PUMP LD MODULE WITH SINGLEMODE FIBER (EDFA) DESCRIPTION Mitsubishi’s FU-630SLD series 1480nm laser diode mod ules are designed as optical pumping sources for erbium-dop ed fib er amp lifier (EDFA).This mod ule is


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    PDF FU-630SLD-8M1/10M1/12M1 FU-630SLD 1480nm -12M1 -10M1 edfa

    ZENER 6.2V DO-214AC

    Abstract: No abstract text available
    Text: SML4728 thru SML4763A Surface Mount Zener Diode Zener Voltage – 3.3 to 91.0 Volts Steady State Power – 1.0 Watt DO-214AC ed e d n Exte e Rang g a t l Vo 0.065 1.65 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152)


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    PDF SML4728 SML4763A DO-214AC 25ALS ZENER 6.2V DO-214AC

    Untitled

    Abstract: No abstract text available
    Text: AD VANC ED P o w er Te c h n o lo g y APT2X30D60J 600V 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS • Anti-Parallel Diode •Switchmode Power Supply •Inverters • Free Wheeling Diode -Motor Controllers


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    PDF APT2X30D60J OT-227 OT-227

    epitaxx

    Abstract: No abstract text available
    Text: epitaxx inc IDE D I 3 J b U W U b UUUUU4J3 ADVANCE PRODUCT RELEASE. INFORMATION EDL1300CD -FC/EDL1300FJ-S EDL1300CD EPITAXX_ _ ED L1300CD -FC: 1300 nm Laser Diode in a- FC Receptacle EDL1300FJ-S/M : 1300 nm Laser Diode w ith an integral f ib e r


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    PDF EDL1300CD -FC/EDL1300FJ-S L1300CD EDL1300FJ-S/M EDL1300CD EDL1300CD: 1300CD EDL1300FJ-S EDL1300CD-FC epitaxx

    RK105

    Abstract: No abstract text available
    Text: Bulletin 127133 rev. D 09/97 International IQ R Rectifier IRK.105 SERIES THYRISTOR/ DIODE and NEW ADD-A-pak Power Modules THYRISTOR/ THYRISTOR Features • Electrically isolated: DBC base plate ■ ■ 3500 VRMg isolating voltage Standard J ED EC package


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    PDF ULE78996 RK105

    Untitled

    Abstract: No abstract text available
    Text: A d v a n c ed P o w er Tec h n o lo g y • APT2X100D60J 600V 100A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode


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    PDF APT2X100D60J OT-227 OT-227

    selfoc

    Abstract: EPITAXX SMF.300 EDL1300CD EDL1300CD-FC EDL1300FJ-S
    Text: epitaxx inc I D E D I 3 J b U W U b UUUUU4J3 ADVANCE PRODUCT RELEASE. INFORMATION EDL1300CD -FC/EDL1300FJ-S EDL1300CD EPITAXX_ _ ED L1300CD -FC: 1300 nm Laser Diode in a- FC Receptacle EDL1300FJ-S/M : 1300 nm Laser Diode w ith an integral f ib e r


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    PDF EDL1300CD-FC EDL1300FJ-S/M: EDL1300CD 33bU4Ub EDL1300CD-FC /EDL1300FJ-S 1300CD EDL1300FJ-S selfoc EPITAXX SMF.300 EDL1300CD EDL1300FJ-S

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C


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    PDF MGP11 N60ED/D MGP11N60ED/D

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET VISIBLE LASER DIODE NDL3220, NDL3220S 670 nm BAR CODE READER, POINTER APPLICATION AIGalnP M OW VISIBLE LASER DIODE DESCRIPTION N D L3220 is an A IG alnP 670 nm visib le laser d io d e and e s p e cially develop ed fo r B ar Code Reader and


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    PDF NDL3220, NDL3220S L3220 IEI-1209)

    Untitled

    Abstract: No abstract text available
    Text: Transmissive Optoswitch VTL23G2B, 23G3B Slotted Switch - Schmitt Output PRODUCT DESCRIPTION This series of interrupter type transm issive optoswitches com bines an infrared emitting diode IR ED with a TTL compatible, Schmitt output, photo 1C detector in an opaque plastic case with


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    PDF VTL23G2B, 23G3B

    CLM185T2

    Abstract: CLM285T2 CLM285Y2 CLM385N2 CLM385T2 CLM385Y2 120PV
    Text: Micropower Voltage Reference Diode C Q IO Q IC CO RPO RATIO N v CLM185-2.5 / CLM285-2.5/ CLM385-2.5 FEATURES ORDERING INFORMATION • Operating C u rre n t. 20 |M - 20mA • Dynamic Im p ed an ce . 1Q


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    PDF CLM185-2 CLM285-2 CLM385-2 CLM185 20yiA CLM185T2 CLM285T2 CLM285d. 4432E CLM285Y2 CLM385N2 CLM385T2 CLM385Y2 120PV

    Untitled

    Abstract: No abstract text available
    Text: A d v a n c ed P o w er Te c h n o l o g y 1 - Cathode 2 - Anods Back of Caaa -Cathoda APT30D40B 400V 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS > Anti-Parallel Dloda -Switchmoda Power Supply -Invartars


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    PDF APT30D40B O-247 O-247AD

    rover

    Abstract: J1000
    Text: SPEb^fo. / ED-Q2Û78 , x . ISSUE Maiçh;i8,20Q2 SHARP OPTOELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. G L 100M N 0M P1M Specified for Enclosed please find copies of the Specifications which consists of 14 pages including cover.


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    PDF ED-Q2078 GL100MN0MP1M GL100MN0MP1M rover J1000

    Untitled

    Abstract: No abstract text available
    Text: eVERJLIGHT EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Light Emitting Diode 5 m m R ound L ED ,T -1 3/4 7343-2UBGC/C505 Features • Popular T-l 3/4 diameter package. • Choice of various viewing angles. • Available on tape and reel. • Reliable and robust.


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    PDF 7343-2UBGC/C505 DLE-734-015

    ip olivetti cd

    Abstract: GL100MD1MP1 GL100MD1
    Text: SPEC. No. ED-02157 ISSUE June 21,2002 SH A R P OPTO-ELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION i " DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. Specified for GL100MD1MP1 Olivetti Enclosed please find copies o f the Specifications which consists o f 14 pages including cover.


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    PDF ED-02157 GL100MD1MP1 ip olivetti cd GL100MD1

    MBD702

    Abstract: MBD502
    Text: MBD502 silicon MBD702 HIG H-VOLTAG E SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES SILICON HOT-CARRIER DIODE (SCHOTTKY BARRIER DIODE) 5 0 -7 0 V O L T S . . . d esig n ed p r im a rily fo r h ig h -e ffic ie n c y U H F an d V H F d e te c to r a p p lic a tio n s.


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    PDF MBD502 MBD702 MountinD502, MBD702 MBD502

    L1323

    Abstract: 1323T
    Text: HL1323TR Laser Diode Description H L 1323T R is a 1.3 ¿im In G aA sP laser diode with d o u b le h etero ju n ctio n structure. It is su itable as a light source in short- to interm ed iate-d istan ce fiberoptic co m m u n icatio n s sys­ te m s, e.g. L A N , C A T V and LJN.


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    PDF HL1323TR 1323T L1323

    condensateur

    Abstract: No abstract text available
    Text: diode biplaque [¿tsLVU g Y' 3 0 È R ed resseu r C A R A C T E R IST IQ U E S G E N E R A L E S C athode à chauffage in d irect T en sio n filam ent . Vf C ourant filam ent . If


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    PDF T12-14 condensateur

    2SC1254

    Abstract: JIS C7021 B-11 led Concave RS510
    Text: LED Structure, Characteristics and Operation | CHARACTERISTICS I LED BASIC STRUCTURE T h e LED Light E m itting Diode chip h as an internal P-N junction, and an electrode is provided on each surface of the chip to m ake ohm ic contact. T he P-N junction is form ed by


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    PDF C7021 90-degree JIS-C7021 2SC1254 JIS C7021 B-11 led Concave RS510

    Untitled

    Abstract: No abstract text available
    Text: O K I electronic components QCS30 Optical PNPN Sw itches GENERAL DESCRIPTION The OCS3 3 is an optical switch form ed by com bining a G aA s infrared light em itting diode and a silicon P N PN element that can w ithstand high voltages. The device is encased in an 8-pin plastic


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    PDF QCS30 2424D OCS30 2424Q b724240

    LG direct drive motor

    Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
    Text: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W


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    PDF 4101B MII-H-38534 LG direct drive motor 600v 20 amp mosfet transistor tl 11C mosfet