V23134-A1052-X299
Abstract: "Power Relay"
Text: Power relay F4 V23134-A1052-X299 Data sheet change over with bracket and diode in parallel to the coil 3D40HB30.WMF Issued: 2005-11-14, Ed 02 Power relay F4 V23134-A1052-X299 02 max Dimensional drawing m ax Latching tab area max max Flat terminal similar
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V23134-A1052-X299
3D40HB30
volt40
V23134-A1052-X299
"Power Relay"
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ZENER 6.2V DO-214AC
Abstract: No abstract text available
Text: SML4728 thru SML4763A Surface Mount Zener Diode Zener Voltage – 3.3 to 91.0 Volts Steady State Power – 1.0 Watt DO-214AC ed e d n Exte e Rang g a t l Vo 0.065 1.65 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152)
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SML4728
SML4763A
DO-214AC
25ALS
ZENER 6.2V DO-214AC
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ixan0002
Abstract: 0002 ixan0002 2 ixan0002 4 SCHEMATIC 10kw POWER SUPPLY WITH IGBTS VERIDUL M power factor correction boost topology veridul dc-dc power converter IGBT 10kW Single phase power factor correction
Text: IXAN0002 Single and Three Phase Recti ers with Active Power Factor Correction for Enhanced Mains Power Quality Andreas Lindemann IXYS Semiconductor GmbH Postfach 1180 D { 68619 Lampertheim www.ixys.net Abstract Johann W. Kolar Swiss Federal Institute of Technology ETH Zurich
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IXAN0002
U-159,
IXYSVUM25-E
ixan0002
0002
ixan0002 2
ixan0002 4
SCHEMATIC 10kw POWER SUPPLY WITH IGBTS
VERIDUL M
power factor correction boost topology
veridul
dc-dc power converter IGBT 10kW
Single phase power factor correction
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IXAN0049
Abstract: igbt inverter schematic induction heating applications of blocking oscillator "bi-directional switches" IGBT induction heating oscillator circuit bi-directional switches IGBT IGBT based voltage source converter igbt for HIGH POWER induction heating Converter for Induction Heating schematic induction heating circuit
Text: IXAN0049 A New IGBT with Reverse Blocking Capability A. Lindemann IXYS Semiconductor GmbH Edisonstra e 15, D { 68623 Lampertheim www.IXYS.net Keywords Discrete Power Devices, Device applications, Device characterization, Devices, Matrix converters, MOS devices, New devices, Power semiconductor devices, Resonant converters, Resonantmode power supplies, Semiconductor devices, Soft switching, ZCS converters
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IXAN0049
IXAN0049
igbt inverter schematic induction heating
applications of blocking oscillator
"bi-directional switches" IGBT
induction heating oscillator circuit
bi-directional switches IGBT
IGBT based voltage source converter
igbt for HIGH POWER induction heating
Converter for Induction Heating
schematic induction heating circuit
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syk 07
Abstract: ASP-601 diode sy 170/syk 07
Text: www.eLED.com Package Dimensions 3.2x1.6mm SMD CHIP LED LAMPS Notes: 1. All dimensions are in millimeters inches . 2. Tolerance is ±0.2(0.0079") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice.
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EPTR3216EC
EPTR3216NW
EPTR3216SGC
EPTR3216QGW
EPTR3216PGW
EPTR3216YC
EPTR3216PYW
EPTR3216SRCPRV
EPTR3216SURC
EPTR3216SURCK
syk 07
ASP-601
diode sy 170/syk 07
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Untitled
Abstract: No abstract text available
Text: SKiiP 37NAB066V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter K:BU *: *: *:-_ $U P FE Q:N 0'7&11 .2 &%681& 1?& 858&4 $1 P FE ¥MT] Q:N $S P HET Q: $1 P FE ¥MT] Q:N $S P HME Q: 2? P H L1 K+BU Diode - Inverter MiniSKiiP 3
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37NAB066V1
37NAB066V1
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K3qa
Abstract: No abstract text available
Text: SKiiP 13NAB066V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper J:BT *: *: *:._ $- N FEP:H 1'7&- /2 &%68-& -?& 858&4 $- N FE [¥L] P:H $S N OEL P: $- N FE [¥L] P:H $S N O¥E P: 2? N O K- J+BT Diode - Inverter, Chopper
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13NAB066V1
K3qa
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET VISIBLE LASER DIODE NDL3220, NDL3220S 670 nm BAR CODE READER, POINTER APPLICATION AIGalnP M OW VISIBLE LASER DIODE DESCRIPTION N D L3220 is an A IG alnP 670 nm visib le laser d io d e and e s p e cially develop ed fo r B ar Code Reader and
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NDL3220,
NDL3220S
L3220
IEI-1209)
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DSAIH0002570
Abstract: No abstract text available
Text: B K C INTERNATIONAL Ü3E D | 117^03 □ □ □□ 13 ? _ Type NO.1N140_ G O LD BO N D ED G ER M A N IU M DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392 TeleFax (617) 681-9135
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1N140_
MIL-S-19500,
DSAIH0002570
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DSAIH0002548
Abstract: 1N314
Text: B K C INTERNATIONAL 03E ] | HVTTöB □□00175 ‘i £ _ Type No. 1N314_ T - * t - o 7 G O LD BO N D ED G ER M A N IU M DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617) 681-0392 Tele Fax (617) 681-9135
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1N314_
MIL-S-19500,
DSAIH0002548
1N314
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diode in40
Abstract: K2P0037-27-33
Text: K2P0037-27-33 OKI electronic components OCS30 Optical PNPN Switches GENERAL DESCRIPTION The OCS30 is an optical sw itch form ed by com bining an infrared light em itting diode a n d a PN PN elem ent {photothyristor that can w ith stan d high voltages. The device is encased in an 8-pin plastic
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K2P0037-27-33
OCS30
OCS30
diode in40
K2P0037-27-33
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Untitled
Abstract: No abstract text available
Text: TLP750 GaAßAs IRED a PHOTO-IC Unit in mm DIGITAL LOGIC GROUND ISOLATION. LINE RECEIVER. MICROPROCESSOR S Y S T E M IN TER FACES. SW I T CHI NG PO^ER SUPPLY F E ED BAC K CONTROL. ANALOG SIGNAL ISOLATION. The Toshiba TLP750 consists of GaA2,As high-output light emitting diode and a high speed detector of
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TLP750
TLP750
200pF,
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12sR7
Abstract: 12sr7, tube 500 watts audio amplifier diagram 12sr7 tube rs tube Scans-0017290
Text: 12SR7 PAGE I 12SR7 Description and Rating DUPLEX-DIODE TRIODE GENERAL DESCRIPTION Pr in ci pa l A p p l i c a t i o n : Th e ty pe I2SR7 is a d u p l e x diode medi um -m u triode ampl if ie rdesi gn ed for use as a c o m b i n e d d e t e c t o r , a u d i o a m p l i f i e r ,
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12SR7
BB-21
CONNEC0000
ET-T392
12sR7
12sr7, tube
500 watts audio amplifier diagram
12sr7 tube
rs tube
Scans-0017290
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Untitled
Abstract: No abstract text available
Text: VER PF -’ - F l . O P E B 32EI FEATURES • Up to 1.25Gb/s operation ■ 75mA peak drive current ■ Separate modulation control ■ Separate master reset for laser safety T he S Y 1 0 0 E L 1 0 0 1 is a high sp e ed current so u rce for driving a sem iconductor lase r diode in optical transm ission
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25Gb/s
16-pin
SY100EL1001ZC
SY100EL1001ZCTR
Z16-2
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1NS14
Abstract: 1N487A G610A 1N473A 1MH12 PEC 736 amk 30-2 HA1I34A
Text: m s ü H ERMETICALLY S E A L E D elect: ABRUPT - HYPERABRUPT Uf G L A S S P A C K A G ED TUNING D IO D ES ELE C T R IC A L CHARACTERISTICS T a = 25° C unle« otherwise noted Diode Cap (CT)* •M0% M V /1 MH/ G EN ER AL LO W IN D U C T A N C E M IN IA T U R E G L A S S
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SQ1213A
MV83Z
MV833
MVB34
MV835
MVS36
MV837
MV838
MVB40
1NS14
1N487A
G610A
1N473A
1MH12
PEC 736
amk 30-2
HA1I34A
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ECH41
Abstract: FAF42 advantages automatic phase changer eaf42 isl 58781 ECH 42 DIODE RK 69 DIODE RECTIFIER press fit EL41 eaf transformer
Text: EAF 42 EAF 4 2 EAF 41 Diode-Pentode H i Fiff. 1 N o rm a l a n d X - r a y p h o to s o f th e E A F 42 (a p p r o x im a te ly a c tu a l ,«izs). T he E A F 42 is a d iode-pentode h av in g variab le-m u characteristics, and can be tised w ith a sliding screen grid voltage ; th e p en tode section is in ten d ed
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ECH41
EAF42
27kfl
\SAF42
22kil
27Ufl
FAF42
advantages automatic phase changer
eaf42
isl 58781
ECH 42
DIODE RK 69
DIODE RECTIFIER press fit
EL41
eaf transformer
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IHD 680 AI
Abstract: Zen Research IN4007 CH1 3W Ihd 680 an
Text: CONCEPT IHD 215/ 280/ 680 Data Sheet& A pplicatbn M a n u a l Intelligent Half-Bridge Drivers ib r E BTs and Pow erM 0 SEETs Description H ie in te llig e n t h a lf-b r id g e d riv e rs of th e IH D ty p e series h a v e been d e v e lo p e d specifically fo r th e reli
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CH-2533
IHD 680 AI
Zen Research
IN4007
CH1 3W
Ihd 680 an
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MC 9080
Abstract: klystron 2k25 klystron klystron 2k25 jan 2k25 2K25 Reflex klystron 2K25 klystron reflex klystron reflex klystron 2k25 jan 2k25
Text: File Catalog: Electron Tube Products Section: Microwave Tubes 6845 Type TK-59 REFLEX KLYSTRON TH E R M A LLY T U N ED DESCRIPTION The 6 8 4 5 (Bendix Type T K -59 ) tube is a ru g g e d ize d , low vo ltage , therm ally tuned X -b a n d reflex klystron, d e
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TK-59
TE-18
MC 9080
klystron 2k25
klystron
klystron 2k25 jan
2k25
2K25 Reflex klystron
2K25 klystron
reflex klystron
reflex klystron 2k25
jan 2k25
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diode smd ED 68
Abstract: transistor smd 4.z ttp 916
Text: I International IG R Rectifier PD -9.16 68 A IR G 4 Z Q 7 0 U D preliminary INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Surface Mountable UltraFast CoPack IGBT Features • U ltraFast IGBT op tim ize d fo r high sw itching frequ en cies
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Untitled
Abstract: No abstract text available
Text: SIEMENS STH 61008 G/N/Z 1300 nm DFB Laser in Coaxial Package with SM-Pigtail, with Optical Isolator for 2,5 Qblt/s Application Dimensions in inches mm .676 (17.21 .597 (15.2) max 0 .236 (6.0) 0] MD ÜË .806 (20.5) .688(17.5) El * Pinning m LD 1 77r (45.0)
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STM-16)
cool----40
STH61008G
STH61008N
STH61008Z
STH61008G/N/Z
8B-16
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nec527
Abstract: cascode miller capacitance AM685 MC1650
Text: Am 685 A New High-Speed Comparator the Am685 INTRODUCTION Modern electronic systems require more and more that operations be perform ed in a few nanoseconds so that the delay of the com plete system, which may be very complex, be held to a minimum. There are abundant logic
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Am685
10-Bit
106-typa
nec527
cascode miller capacitance
AM685
MC1650
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Untitled
Abstract: No abstract text available
Text: ¿57 S G S -T H O M S O N ¡U È T O « S T P 6 N A 80 S T P 6 N A 8 0 FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR STP6NA80 STP6NA80FI 800 V 800 V R D S o n CO CO ED ED V d ss A A TYP E Id 5.7 A 3.4 A • TYPICAL RDS(on) = 1 68 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING
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STP6NA80
STP6NA80FI
STP6NA80/FI
ISQWATT220
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TIC 44 SCR
Abstract: SCR TIC 44 MTO thyristor unial
Text: MITEL MP02 XXX 175 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes Septem ber 1992 version, 2.2 DS4477-3.0 Decem ber 1998 FEATURES • ■ ■ ■ ■ KEY PARAMETERS VDRM 1600V 'ts m 6800A lT AV (per arm) 175A Visol 2500V Dual Device M odule
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DS4477-3
TIC 44 SCR
SCR TIC 44
MTO thyristor
unial
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DB618
Abstract: 235n
Text: A ugust 1992 Micro Linear ML2264 4-Channel High-Speed 8-Bit A/D Converter with T/H S/H GENERAL DESCRIPTION FEATURES T h e M L2264 is a hig h-sp eed, fjP co m p atib le , 4-ch ann el 8-bit A /D co n v e rte r w ith a co n ve rsio n tim e of 680ns o ve r the op eratin g te m p e ratu re range and su p p ly
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ML2264
L2264
680ns
TMS320
L2264BM
ML2264BIJ
L2264BCP
L2264BCS
L2264CM
DB618
235n
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