SMD 8A TRANSISTOR
Abstract: Diode SMD ED 8A transistor SMD 8A TRANSISTOR 935 SMD smd transistor 8A fast recovery diode 1200v SMD smd transistor ed STTA812G
Text: STTA812G TURBOSWITCHTM ”A” ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINAY DATASHEET MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 1200V trr (typ) 50ns VF (max) 2.0V A K K FEATURES AND BENEFITS ULTRA-FAST, AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN
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STTA812G
SMD 8A TRANSISTOR
Diode SMD ED 8A
transistor SMD 8A
TRANSISTOR 935 SMD
smd transistor 8A
fast recovery diode 1200v SMD
smd transistor ed
STTA812G
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Untitled
Abstract: No abstract text available
Text: 600V 8A APT8DQ60KCT APT8DQ60KCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters -Inverters
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APT8DQ60KCT
APT8DQ60KCTG*
O-220
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STD10NM60ND
Abstract: 10NM60 10nm60n STD10NM60N STP10NM60ND STF10NM60ND 10nm6
Text: STD10NM60ND, STF10NM60ND STP10NM60ND N-channel 600 V, 0.57 Ω, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET with fast diode Features Order codes VDSS @TJmax RDS(on) max. PTOT ID STD10NM60ND STF10NM60ND TAB 3 70 W 650 V < 0.6 Ω 8A 1 3 25 W STP10NM60ND
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STD10NM60ND,
STF10NM60ND
STP10NM60ND
O-220FP,
O-220
STD10NM60ND
O-220FP
O-220
10NM60
10nm60n
STD10NM60N
STP10NM60ND
10nm6
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Untitled
Abstract: No abstract text available
Text: MJD122 NPN SILICON DARLINGTON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix)
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MJD122
300uS,
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UFF 100 02
Abstract: TRANSISTOR tip122 MJD122 TIP122 transistor jt surface mount transistor mjd122
Text: MJD122 NPN SILICON DARLINGTON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - I “ Suffix)
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MJD122
TIP122
UFF 100 02
TRANSISTOR tip122
TIP122
transistor jt
surface mount transistor mjd122
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sq-10a
Abstract: KSH117 TIP117
Text: KSH117 PNP SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix)
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KSH117
TIP117
EmittKSH117
-OJ52
sq-10a
TIP117
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TRANSISTOR tip122
Abstract: KSH122 TIP122 Darlington NPN Silicon Diode
Text: KSH122 NPN SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix)
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KSH122
TIP122
TRANSISTOR tip122
TIP122
Darlington NPN Silicon Diode
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KSH127
Abstract: TIP127
Text: KSH127 PNP SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix)
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KSH127
TIP127
300ns,
TIP127
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1N 3000 DIODE
Abstract: 14R7 Scans-0017298 general electric
Text: 14R7 14R.7 PAGE I Description and Rating DUPLEX-DIODE PENTODE GENERAL DESCRIPTION Pr i n c i p a l Application: semi-remote-cutoff combined fi er detector, The I4R7 pentode for us e as a automatic-voIume-controI and audio amplifier. a l s o be us ed as a r a d i o - f r e q u e n c y or i n t e r m ed ia te f r e q u e n c y a m p l i f i e r . Th e tube fe at ur es low co upling
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ET-T745
1N 3000 DIODE
14R7
Scans-0017298
general electric
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IN5288
Abstract: IN5305 IN5309 diode 0107MA IN5309 1N5298 equivalent CNS 022 1N5305 equivalent 1N5286 IN5283
Text: Microsemi Corp. J T he diode exp erts j SANTA ANA, CA SCOTTSDALE, AZ For more information call: 602 941-6300 / IVI*5 28 3 th ru M *5314 a n d C f5 2 8 3 th ru C f5 3 1 4 HIGH RELIABILITY CURRENT REGULATOR DIODES Features (* ) • A va ila b le as screen ed e q u iva le n ts using p refixes n oted b elo w :
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Cf5283
Cf5314
IN5288
IN5305
IN5309 diode
0107MA
IN5309
1N5298 equivalent
CNS 022
1N5305 equivalent
1N5286
IN5283
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1 watt diode
Abstract: .7E7 Scans-0017297
Text: TENTATIVE 7E7 I4E7 DATA TUNG-SOL D O U B LE-D IO D E PE N T ODE COATED U N I P O T E N T IA L CATHODE T -9 HEATER 2 iS 1 2 . 6 VOLT S 32 150 MA. AC OR DC ANY MOUNTING P O S I T I O N - |i 16 - MAX BOTTOM VIEW GL ASS BULB 8 L OC K - 1N P 1N B A S E 8AE THE 1 4 E 7 I S A CO MB IN ED REMOTE CUT OFF PENTODE AND DOUBLE D 1ODE DETECTOR
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100 n M275V
Abstract: M275V CS5208 IC 711
Text: 8A LDO 3-Pin Adjustable Linear Regulator D escription The CS5208-1 linear regulator pro vides 8A at adjustable voltages from 1.25V to 4.5V. This adjustable device requires two external resis tors to set the output voltage and provide the m inim um load current
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CS5208-1
CS5208-1
CS5208-1GT3
100 n M275V
M275V
CS5208
IC 711
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Untitled
Abstract: No abstract text available
Text: 8A LDO 3-Pin Adjustable Linear Regulator Description The CS5208-1 linear regulator pro vides 8A at adjustable voltages from 1.25V to 4.5V. This adjustable device requires two external resis tors to set the output voltage and provide the minimum load current
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CS5208-1
CS5208-1
CS5208-1GT3
T0-220
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Untitled
Abstract: No abstract text available
Text: 8A LDO 5-Pin Adjustable Linear Regulator Description This n ew very low d ro p o u t reg u la tor is designed to p o w er the next generation of ad v anced m icroproces sors. To achieve very low dropout, the internal pass transistor is p o w ered separately from the control cir
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CS5258-1,
T0-220
CS5258-1GT5
T0-220
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Untitled
Abstract: No abstract text available
Text: CS-5208-1 8A LDO 3-Pin Adjustable Linear Regulator Description The CS-5208-1 linear regulator pro vides 8A at adjustable voltages from 1.25V to 45V. This adjustable device requires two external resis tors to set the output voltage and provide the minimum load current
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CS-5208-1
CS-5208-1
O-220
CS-52
3LTO-22Û
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Untitled
Abstract: No abstract text available
Text: 8A LDO 3-Pin Adjustable Linear Regulator Description The CS-5208-1 linear regulator pro vides 8A at adjustable voltages from 1.25V to 4.5V. This adjustable device requires two external resis tors to set the output voltage and provide the minimum load current
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CS-5208-1
CS-5208-1
O-220
CS-5208-1T3
T0-220
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Untitled
Abstract: No abstract text available
Text: 8A LDO 3-Pin Adjustable Linear Regulator D escription The CS-5208-1 linear regulator pro vides 8A at adjustable voltages from 1.25V to 4.5V. This adjustable device requires two external resis tors to set the output voltage and provide the minimum load current
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CS-5208-1
CS-5208-1
O-220
CS-5208-1T3
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Untitled
Abstract: No abstract text available
Text: JSJ H A R R IS UU S E M I C O N D U C T O R FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 8A, 100V, RDS on = 0.180Q TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts
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FRL130D,
FRL130R,
FRL130H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
631UIS
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smd transistor xf
Abstract: Diode SMD ED 8A SMD 8A TRANSISTOR smd transistor 2p data smd diode ED 08 smd transistor 8A transistor smd z a diode ed 8a
Text: rzT ^7# SGS-THOMSON M »iLiOT(s iOOS TURBOSWITCH ”A” STTA812G ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f (a v ) 8A V rrm 1200V trr PRELIMINAY DATASHEET a- 50ns (typ) H -k 2.0V Vf (max) FEATURES AND BENEFITS • ULTRA-FAST, AND NOISE-FREE RECOVERY.
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STTA812G
smd transistor xf
Diode SMD ED 8A
SMD 8A TRANSISTOR
smd transistor 2p data
smd diode ED 08
smd transistor 8A
transistor smd z a
diode ed 8a
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ED2A
Abstract: No abstract text available
Text: STTH806TTI TURBOSWITCH Tandem 600V ULTRAFAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS If av 8A V rrm 600 V (in series) V f (max) 2.6 V I RM (typ.) 4A FEATURES AND BENEFITS • ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING
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STTH806TTI
ED2A
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Diode SMD ED 7ca
Abstract: alps 502 RD SMD 8A TRANSISTOR transistor smd 1FT STTA806M alps 502 C
Text: / = 7 SGS-THOMSON S T T A 806M IL iO T * ! & _ ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 8A V rrm 600V trr 25ns (typ) 1.5 V V f (max) FEATURE&AND BENEFITS • SPECIFIC TO "FREEWHEEL MODE” OPERA TIONS: Freewheel or Booster Diode.
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STTA806M
Diode SMD ED 7ca
alps 502 RD
SMD 8A TRANSISTOR
transistor smd 1FT
STTA806M
alps 502 C
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smd transistor 2p data
Abstract: diode 500A 1200v smd transistor JJ
Text: rz T ^7# SGS-THOMSON M »iLiOT(s iOOS TURBOSWITCH ”A” STTA812G ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f (a v ) 8A V rrm 1200V (typ) 50ns (max) 2.0V trr Vf PRELIMINAY DATASHEET a -H -k FEATURES AND BENEFITS • ULTRA-FAST, AND NOISE-FREE RECOVERY.
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STTA812G
smd transistor 2p data
diode 500A 1200v
smd transistor JJ
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Untitled
Abstract: No abstract text available
Text: STTH806TTI TURBOSWITCH Tandem 600V ULTRA-FAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS I f a v 8A V rrm 600 V (in series) V f (max) 2.6 V IRM (typ.) 4A FEATURES AND BENEFITS • ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING
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STTH806TTI
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mosfet morocco
Abstract: ad 152 transistor
Text: f Z T SGS-THOMSON ^ 7# M C ^ < m iO T s M K S T T A 8 1 2 D (I TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If(av) 8A V rrm 1200V trr (typ) 50ns Vf (max) 2.0V PRELIMINARY DATA kH 4 - V FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE
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