Untitled
Abstract: No abstract text available
Text: UML2N Transistors Low-frequency transistor isolated transistor and diode UML2N Features 1) The 2SC2412K and a diode are housed independently in a UMT package. External dimensions (Unit : mm) UMT5 2.0 1.3 0.9 0.65 0.65 0.7 Equivalent circuit (1) 2.1 (2) 1.25
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2SC2412K
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE EQUIVALENT For 3 Pin Package *Pb-free plating product number: BAV99L For 6 Pin Package ORDERING INFORMATION Ordering Number Normal Lead Free Plating BAV99-AE3-R BAV99L-AE3-R
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BAV99
BAV99L
BAV99-AE3-R
BAV99L-AE3-R
BAV99-AL3-R
BAV99L-AL3-R
BAV99-AN3-R
BAV99L-AN3-R
BAV99-AL6-R
BAV99L-AL6-R
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LM103 zener
Abstract: LM103 7702806XA
Text: MILITARY DATA SHEET Original Creation Date: 12/02/96 Last Update Date: 12/20/96 Last Major Revision Date: 12/02/96 MNLM103-3.0-H REV 0A0 REFERENCE DIODE General Description The LM103 is a two-terminal monolithic reference diode electrically equivalent to a
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MNLM103-3
LM103
100uA
400uA
LM103 zener
7702806XA
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marking K1 sot363
Abstract: DBAV99 bav99 diode Diode BAV99 SOT23 Electronic Designs bav99 BAV99L BAV99 SOT 23 DATA SHEET Diode bav99 sot a1 BAV99-AE3-R
Text: UNISONIC TECHNOLOGIES CO., LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE EQUIVALENT For 3 Pin Package Lead-free: BAV99L Halogen-free:BAV99G For 6 Pin Package ORDERING INFORMATION Normal BAV99-AE3-R BAV99-AL3-R BAV99-AN3-R BAV99-AL6-R Ordering Number
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BAV99
BAV99L
BAV99G
BAV99-AE3-R
BAV99-AL3-R
BAV99-AN3-R
BAV99-AL6-R
BAV99L-AE3-R
BAV99L-AL3-R
BAV99L-AN3-R
marking K1 sot363
DBAV99
bav99 diode
Diode BAV99 SOT23
Electronic Designs bav99
BAV99L
BAV99 SOT 23 DATA SHEET
Diode bav99
sot a1
BAV99-AE3-R
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LM103 zener
Abstract: LM103 LM103H MNLM103-3 zener diode mv 5 SMD ZENER DIODE 0,5w
Text: MILITARY DATA SHEET Original Creation Date: 12/02/96 Last Update Date: 12/20/96 Last Major Revision Date: 12/02/96 MNLM103-3.3-H REV 0A0 REFERENCE DIODE General Description The LM103 is a two-terminal monolithic reference diode electrically equivalent to a
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MNLM103-3
LM103
100uA
400uA
LM103 zener
LM103H
zener diode mv 5
SMD ZENER DIODE 0,5w
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LM103 zener
Abstract: zener diode mv 5 LM103H-3.6-SMD LM103
Text: MILITARY DATA SHEET Original Creation Date: 12/02/96 Last Update Date: 12/20/96 Last Major Revision Date: 12/02/96 MNLM103-3.6-H REV 0A0 REFERENCE DIODE General Description The LM103 is a two-terminal monolithic reference diode electrically equivalent to a
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MNLM103-3
LM103
100uA
400uA
LM103 zener
zener diode mv 5
LM103H-3.6-SMD
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LM103
Abstract: 351 zener diode LM103 zener SMD ZENER DIODE 0,5w
Text: MILITARY DATA SHEET Original Creation Date: 12/02/96 Last Update Date: 12/20/96 Last Major Revision Date: 12/02/96 MNLM103-3.9-H REV 0A0 REFERENCE DIODE General Description The LM103 is a two-terminal monolithic reference diode electrically equivalent to a
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MNLM103-3
LM103
100uA
400uA
351 zener diode
LM103 zener
SMD ZENER DIODE 0,5w
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marking K1 sot363
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE EQUIVALENT ORDERING INFORMATION Ordering Number BAV99G-AE3-R BAV99G-AL3-R BAV99G-AN3-R BAV99G-AL6-R Note: Pin Assignment: A: Anode Package SOT-23 SOT-323 SOT-523 SOT-363
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BAV99
BAV99G-AE3-R
BAV99G-AL3-R
BAV99G-AN3-R
BAV99G-AL6-R
OT-23
OT-323
OT-523
OT-363
OT-23
marking K1 sot363
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BAV99
Abstract: BAV99G-AE3-R
Text: UNISONIC TECHNOLOGIES CO., LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE EQUIVALENT For 3 Pin Package For 6 Pin Package ORDERING INFORMATION Ordering Number Lead Free Halogen Free BAV99L-AE3-R BAV99G-AE3-R BAV99L-AL3-R BAV99G-AL3-R BAV99L-AN3-R BAV99G-AN3-R
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BAV99
BAV99L-AE3-R
BAV99G-AE3-R
BAV99L-AL3-R
BAV99G-AL3-R
BAV99L-AN3-R
BAV99G-AN3-R
BAV99L-AL6-R
BAV99G-AL6-R
OT-23
BAV99
BAV99G-AE3-R
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XB01SB04A2BR
Abstract: No abstract text available
Text: XB01SB04A2BR ETR1601_001 Schottky Barrier Diode 1A, 40V Type •GENERAL DESCRIPTION XB01SB04A2BR employs 1A level of a schottky diode in a small package equivalent to SOD-123 package. It is suitable for compact, low profile circuit designs. By giving the series low VF and low IR characteristics, it minimizes power supply loss.
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XB01SB04A2BR
ETR1601
XB01SB04A2BR
OD-123
OD-123
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2n1613 equivalent
Abstract: BC237 diode l 0607
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection
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SC-70/SOT-323
BAV99WT1
BAV99LT1.
BAV99RWT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2n1613 equivalent
BC237
diode l 0607
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO.,LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE 3 EQUIVALENT 3 K A A K 2 2 1 SOT-23 MARKING 3 *Pb-free plating product number: BAV99L V99 2 1 PIN CONFIGURATION PIN NO. PIN NAME 1 K1 2 A2 3 K2, A1 1 ORDERING INFORMATION Order Number
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BAV99
OT-23
BAV99L
BAV99-AE3-R
BAV99L-AE3-R
QW-R601-005
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Untitled
Abstract: No abstract text available
Text: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application
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KSC5603D
O-220
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150a gto
Abstract: QS 100 NPN Transistor 200H KSC5603D
Text: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application
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KSC5603D
O-220
150a gto
QS 100 NPN Transistor
200H
KSC5603D
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KSC5302DM
Abstract: No abstract text available
Text: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications
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KSC5302DM
O-126
KSC5302DM
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j5304d
Abstract: transistor j5304d j5304 FJD5304DTM J530 FJD5304D FJD5304DTF fjd5304
Text: FJD5304D High Voltage Fast Switching Transistor FJD5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit
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FJD5304D
FJD5304D
j5304d
transistor j5304d
j5304
FJD5304DTM
J530
FJD5304DTF
fjd5304
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Untitled
Abstract: No abstract text available
Text: UML6N Transistors General purpose transistor isolated transistor and diode UML6N 2SA2018 and RB521S-30 are housed independently in a UMT package. !Equivalent circuit (3) (2) (1) Tr2 (4) Di1 (6) !Packaging specifications Type UML6N UMT5 Package L6 Marking
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2SA2018
RB521S-30
SC-88A
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KSC5302DM
Abstract: surgical spirit KSC5302D
Text: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications
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KSC5302DM
O-126
KSC5302DM
surgical spirit
KSC5302D
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KSC5302DM
Abstract: No abstract text available
Text: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications
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KSC5302DM
O-126
KSC5302DM
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Untitled
Abstract: No abstract text available
Text: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications
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KSC5302DM
O-126
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Untitled
Abstract: No abstract text available
Text: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications
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KSC5302DM
O-126
KSC5302DMTU
KSC5302DMSTU
KSC5302DM
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j5304d
Abstract: J5304 J530 FJU5304DTU free transistor and ic equivalent data o Transistor AND DIODE Equivalent list FJU5304D transistor j5304d
Text: FJU5304D High Voltage Fast Switching Transistor FJU5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit
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FJU5304D
FJU5304D
j5304d
J5304
J530
FJU5304DTU
free transistor and ic equivalent data o
Transistor AND DIODE Equivalent list
transistor j5304d
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Untitled
Abstract: No abstract text available
Text: 60V N -ch MOSFET 2SK3711 December 2005 Package—TO3P Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed Applications • Electric power steering • High current switching Equivalent circuit D 2
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2SK3711
T02-002EA-051124
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Untitled
Abstract: No abstract text available
Text: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET
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6306A
AUIRGP50B60PD1
AUIRGP50B60PD1E
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