IS471F
Abstract: 229201 2N3053 transistor 3 pin IR sensor circuit 38khz relay 270r IS471F equivalent RS Components 585-983 IR Sensor receiver pair ir led modulated at 38kHz transistor BC107 pin diagram
Text: Issued November 1994 F18528 Infra-red devices Basics of photometry This is a brief introduction to the basics of photometry. To be able to understand this subject better a brief review of geometric principles utilised is required. Figure 2 Geometric principles
|
Original
|
F18528
IS471F
229201
2N3053 transistor
3 pin IR sensor circuit 38khz
relay 270r
IS471F equivalent
RS Components 585-983
IR Sensor receiver pair
ir led modulated at 38kHz
transistor BC107 pin diagram
|
PDF
|
150A 1200V IGBT MITSUBISHI
Abstract: CM75TU-24H
Text: MITSUBISHI IGBT MODULES CM75TU-24H HIGH POWER SWITCHING USE INSULATED TYPE A B F G E H E G E H R 4 - Mounting Holes S K L GuP EuP D GvP EvP GwP EwP C GuN EuN TC Measured Point v u TC Measured M Point GwN EwN GvN EvN w N 5 - M5 NUTS E H E H K E J J TAB#110 t=0.5
|
Original
|
CM75TU-24H
150A 1200V IGBT MITSUBISHI
CM75TU-24H
|
PDF
|
BUN DIODE
Abstract: DIODE EVP 28 CM50TF-12H bup transistor
Text: CM50TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 50 Amperes/600 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M BwN EwN F R F R K R
|
Original
|
CM50TF-12H
Amperes/600
20-25kHz)
BUN DIODE
DIODE EVP 28
CM50TF-12H
bup transistor
|
PDF
|
CM20TF-24H
Abstract: igbt 600v 20a 600v 20a IGBT
Text: MITSUBISHI IGBT MODULES CM20TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A S - DIA. 2 TYP. C K H H N GUP EUP GVP EVP GWP EWP U V W P D J E L N GUN EUN GVN EVN R Q R GWN EWN Q R P B TAB #250, t = 0.8 TAB #110, t = 0.5 F G M R P GuP GvP EuP U GwP EvP V
|
Original
|
CM20TF-24H
CM20TF-24H
igbt 600v 20a
600v 20a IGBT
|
PDF
|
IGBT. CM50TF-12H
Abstract: CM50TF-12H
Text: MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of
|
Original
|
CM50TF-12H
IGBT. CM50TF-12H
CM50TF-12H
|
PDF
|
150A 1200V IGBT MITSUBISHI
Abstract: CM75TU-24H
Text: MITSUBISHI IGBT MODULES CM75TU-24H HIGH POWER SWITCHING USE INSULATED TYPE A B F G H E E G E H R 4 - Mounting Holes S K L GuP EuP D GvP EvP GwP EwP C GuN EuN TC Measured Point v u TC Measured M Point GwN EwN GvN EvN w N 5 - M5 NUTS E H E H K E J J TAB#110 t=0.5
|
Original
|
CM75TU-24H
150A 1200V IGBT MITSUBISHI
CM75TU-24H
|
PDF
|
CM30TF-24H
Abstract: igbt 600V 30A
Text: MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R L K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of
|
Original
|
CM30TF-24H
CM30TF-24H
igbt 600V 30A
|
PDF
|
CM30TF-12H
Abstract: CM30TF12H igbt 300V 30A H bridge 300v 30a
Text: MITSUBISHI IGBT MODULES CM30TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A S - DIA. 2 TYP. C K H H N GUP EUP GVP EVP GWP EWP U V W P D J E L N GUN GVN EVN EUN R Q R GWN EWN Q R P B TAB #250, t = 0.8 TAB #110, t = 0.5 F G M R P GuP GvP EuP U GuN EwP W
|
Original
|
CM30TF-12H
CM30TF-12H
CM30TF12H
igbt 300V 30A
H bridge 300v 30a
|
PDF
|
laser gun
Abstract: CM75TU-24H
Text: CM75TU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six IGBTMOD U-Series Module 75 Amperes/1200 Volts A B F E G H E G E H R 4 - Mounting Holes S K L GuP EuP D GvP EvP GwP EwP C GuN EuN TC Measured Point v u TC
|
Original
|
CM75TU-24H
Amperes/1200
Contr7272
laser gun
CM75TU-24H
|
PDF
|
all transistor
Abstract: E80276 QM30TB-24B bvp DIODE
Text: MITSUBISHI TRANSISTOR MODULES QM30TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-24B • • • • • IC Collector current . 30A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 750
|
Original
|
QM30TB-24B
E80276
E80271
all transistor
E80276
QM30TB-24B
bvp DIODE
|
PDF
|
E80276
Abstract: QM30TB-2H all transistor
Text: MITSUBISHI TRANSISTOR MODULES QM30TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-2H • • • • • IC Collector current . 30A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75
|
Original
|
QM30TB-2H
E80276
E80271
E80276
QM30TB-2H
all transistor
|
PDF
|
all transistor
Abstract: E80276 QM30TF-HB
Text: MITSUBISHI TRANSISTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TF-HB • • • • • IC Collector current . 30A VCEX Collector-emitter voltage . 600V hFE DC current gain. 750
|
Original
|
QM30TF-HB
E80276
E80271
all transistor
E80276
QM30TF-HB
|
PDF
|
CM15TF-24H
Abstract: 400v 15A igbt module
Text: MITSUBISHI IGBT MODULES CM15TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A S - DIA. 2 TYP. C K H H N GUP EUP GVP EVP GWP EWP U V W P D J E L N GUN EUN GVN EVN R Q R GWN EWN Q R P B TAB #250, t = 0.8 TAB #110, t = 0.5 F G M R P GuP GvP EuP U GwP EvP V
|
Original
|
CM15TF-24H
CM15TF-24H
400v 15A igbt module
|
PDF
|
CM50TF-12H
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of
|
Original
|
CM50TF-12H
CM50TF-12H
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: CM10AD05-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Flexpak CIB Module Three Phase Converter + Three Phase Inverter + Brake + Thermistor 10 Amperes/600 Volts G H H H A C H H H J K J K K S E N1 P1 OPEN OPEN OPEN
|
Original
|
CM10AD05-12H
Amperes/600
|
PDF
|
Three phase inverter CIRCUIT DIAGRAM
Abstract: Dc to 3 Phase Inverters dc to ac inverter circuit diagram inverter dc to ac 12 volt dc to 220 volt ac inverter 3 phase inverters circuit diagram igbt CM15AD05-12H
Text: CM15AD05-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Flexpak CIB Module Three Phase Converter + Three Phase Inverter + Brake + Thermistor 15 Amperes/600 Volts G H H H A C H H H J K J K K S E N1 P1 OPEN OPEN OPEN
|
Original
|
CM15AD05-12H
Amperes/600
Three phase inverter CIRCUIT DIAGRAM
Dc to 3 Phase Inverters
dc to ac inverter circuit diagram
inverter dc to ac
12 volt dc to 220 volt ac inverter
3 phase inverters circuit diagram igbt
CM15AD05-12H
|
PDF
|
600v 30a IGBT
Abstract: BUN DIODE CIRCUIT DIAGRAM UPS welding circuit diagram CM30TF-24H DIODE EVP 25 igbt 30A
Text: CM30TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 30 Amperes/1200 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M F R BwN EwN F R L K
|
Original
|
CM30TF-24H
Amperes/1200
600v 30a IGBT
BUN DIODE
CIRCUIT DIAGRAM UPS
welding circuit diagram
CM30TF-24H
DIODE EVP 25
igbt 30A
|
PDF
|
CM75TU-24H
Abstract: No abstract text available
Text: CM75TU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six IGBTMOD U-Series Module 75 Amperes/1200 Volts A B F E G H E G E H R 4 - Mounting Holes S K L GuP EuP D GvP EvP GwP EwP C GuN EuN TC Measured Point v u TC
|
Original
|
CM75TU-24H
Amperes/1200
135ns)
Motion/Ser7272
CM75TU-24H
|
PDF
|
all transistor
Abstract: E80276 QM30TB-24 QM30tb
Text: MITSUBISHI TRANSISTOR MODULES QM30TB-24 MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-24 • • • • • IC Collector current . 30A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 75
|
Original
|
QM30TB-24
E80276
E80271
all transistor
E80276
QM30TB-24
QM30tb
|
PDF
|
CM30TF-12H
Abstract: H bridge 300v 30a igbt 200v 30a
Text: MITSUBISHI IGBT MODULES CM30TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A S - DIA. 2 TYP. C K H H N GUP EUP GVP EVP GWP EWP U V W P D J E L N GUN EUN GVN EVN R Q R GWN EWN Q R P B TAB #250, t = 0.8 TAB #110, t = 0.5 F G M R P GuP GvP EuP U GuN EwP W
|
Original
|
CM30TF-12H
CM30TF-12H
H bridge 300v 30a
igbt 200v 30a
|
PDF
|
600v 20a IGBT
Abstract: igbt power module 1200v 20A CM20TF-24H ic tab 810
Text: MITSUBISHI IGBT MODULES CM20TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A S - DIA. 2 TYP. C K H H N GUP EUP GVP EVP GWP EWP U V W P D J E L N GUN GVN EVN EUN R Q R GWN EWN Q R P B TAB #250, t = 0.8 TAB #110, t = 0.5 F G M R P GuP GvP EuP U GwP EvP V
|
Original
|
CM20TF-24H
600v 20a IGBT
igbt power module 1200v 20A
CM20TF-24H
ic tab 810
|
PDF
|
CM15TF-24H
Abstract: 400v 15A transistor module
Text: MITSUBISHI IGBT MODULES CM15TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A S - DIA. 2 TYP. C K H H N GUP EUP GVP EVP GWP EWP U V W P D J E L N GUN GVN EVN EUN R Q R GWN EWN Q R P B TAB #250, t = 0.8 TAB #110, t = 0.5 F G M R P GuP GvP EuP U GwP EvP V
|
Original
|
CM15TF-24H
CM15TF-24H
400v 15A transistor module
|
PDF
|
20-25kHz
Abstract: CM20AD05-12H CM20AD
Text: CM20AD05-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Flexpak CIB Module Three Phase Converter + Three Phase Inverter + Brake + Thermistor 20 Amperes/600 Volts G H H H A C H H H J K J K K S E N1 P1 OPEN OPEN OPEN
|
Original
|
CM20AD05-12H
Amperes/600
20-25kHz
CM20AD05-12H
CM20AD
|
PDF
|
DIODE EVP 25
Abstract: IS471F
Text: SHARP IS471F IS471F OPIC Ught Detector with BitfMn Signal • Features ■ Olitine Dimensions m > J| rrocessng AS wrcw Lm I Tur I m Iì J a ILu ì ugm IMownon synoni Unit : mm 1. Im pervious to external disturbing lights due to light m odulation system 2. Built-in pulse driver circuit and sync,
|
OCR Scan
|
IS471F
--25t
DIODE EVP 25
IS471F
|
PDF
|
