IFS100B12N3E4
Abstract: C5363 IFS100B12N3E4B
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current
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IFS100B12N3E4
428654F4
BCFC24
E32DC
BCFC26
E32DC6
6734F
9C46E4
BC33694
1231423567896AB
C5363
IFS100B12N3E4B
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IFS150B12N3T4_B31
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS150B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
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IFS150B12N3T4
E1322
FF326DC
FC26E1
2313F
D36134
1231423567896AB
54F36C
4112CD3567896BE
IFS150B12N3T4_B31
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474F3
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
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IFS75B12N3E4
E1322
FF326DC
FC26E1
2313F
D36134
1231423567896AB
54F36C
4112CD3567896BE
474F3
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LTC4098-3.6
Abstract: se666 k3332 edt0145.6 SEH-01T-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B32 MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense
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IFS75B12N3E4
428654F4
BCFC24
E32DC
BCFC26
E32DC6
6734F
9C46E4
327C53
1231423567896AB
LTC4098-3.6
se666
k3332
edt0145.6
SEH-01T-P0.6
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LTC4098-3.6
Abstract: A20-LCD15.6 SXA-01GW-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current
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IFS75B12N3E4
428654F4
D3265
ECFC24
B32DC
CD3289
ECFC26
B32DC6
C36B3
1231423567896AB
LTC4098-3.6
A20-LCD15.6
SXA-01GW-P0.6
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diode F4 6A
Abstract: 4F36F123
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current
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IFS100B12N3E4
428654F4
D3264
ECFC24
B32DC
D3692C
CD3288
ECFC26
B32DC6
6934F
diode F4 6A
4F36F123
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f2c02
Abstract: No abstract text available
Text: MMDF2C02E Power MOSFET 2.5 Amps, 25 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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MMDF2C02E
MMDF2C02E/D
f2c02
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E3P102
Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001 SCILLC, 2001 Previous Edition 1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.
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DL135/D
Apr-2001
r14525
DLD601
E3P102
T2-955V
e6n02
t9n10e
DL135
1086v
l1n06c
24 v DC relay 34.51.7
d3n03
20n06hl
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f2c02
Abstract: MOSFEt n channel for 800 volt 2 amp 2706 fet mosfet transistor 400 volts.100 amperes AN569 MMDF2C02E MMDF2C02ER2
Text: MMDF2C02E Power MOSFET 2.5 Amps, 25 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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MMDF2C02E
MMDF2C02E/D
f2c02
MOSFEt n channel for 800 volt 2 amp
2706 fet
mosfet transistor 400 volts.100 amperes
AN569
MMDF2C02E
MMDF2C02ER2
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F2C02
Abstract: AN569 MMDF2C02E MMDF2C02ER2
Text: MMDF2C02E Advance Information Power MOSFET 2.5 Amps, 25 Volts Complementary SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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MMDF2C02E
r14525
MMDF2C02E/D
F2C02
AN569
MMDF2C02E
MMDF2C02ER2
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f2c02 motorola
Abstract: f2c02 AN569 MMDF2C02E MMDF2C02ER2 SMD310
Text: MOTOROLA Order this document by MMDF2C02E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MMDF2C02E Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface
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MMDF2C02E/D
MMDF2C02E
MMDF2C02E/D*
TransistorMMDF2C02E/D
f2c02 motorola
f2c02
AN569
MMDF2C02E
MMDF2C02ER2
SMD310
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TEA1601T
Abstract: ON4959 12NC philips OQ0260HL TEA1601T/N5 ON4959 transistor TEA1601T/N2 tea1091 OQ0256HP TV power transistor ON4959
Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN49 Exhibit A June 30, 2003 SEE DN49 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.
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31-dec-03
31-mrt-04
X3A-BFQ32
XAU2903CK
XAU2903
30-dec-03
30-mrt-04
XAU2903CU
XN5230CK
XN5230
TEA1601T
ON4959
12NC philips
OQ0260HL
TEA1601T/N5
ON4959 transistor
TEA1601T/N2
tea1091
OQ0256HP
TV power transistor ON4959
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SSM3J307T
Abstract: SSM3J328R SSM3J334R
Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g
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200-mA
BCE0030D
SSM3J307T
SSM3J328R
SSM3J334R
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TPCA*8064
Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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BCE0082B
TPCA*8064
TK12A10K3
TPCA8077
2SK3567 equivalent
SSM3J328
TPCA8077-H
TJ11A10M3
TK50E06K3A
TPCA*8077
TPCA8028
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M M DF2C01HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F2C 01 HD Medium Power Surface Mount Products Motorola Preferred Device Com plem entary TMOS Field Effect Transistors COMPLEMENTARY DUAL TMOS POWER FET
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DF2C01HD/D
MMDF2C01HD/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMDF2C02HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M M D F2C 02H D Medium Power Surface Mount Products M o to ro la P re ferre d D e vic e C om plem entary TMOS Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs
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MMDF2C02HD/D
2PHX43416-0
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D2C02
Abstract: Motorola TMOS Power FET P-Channel DIODE F2C N and P MOSFET
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M M D F2C 02H D Medium Power Surface Mount Products Motorola Preferred Device Com plem entary TMOS Field Effect TVansistors COMPLEMENTARY DUAL TM O S POW ER FET 2.0 AM PERES 20 VOLTS MiniMOS devices are an advanced series of power MOSFETs
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M M DF2C02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F2C 02H D Medium Power Surface Mount Products Motorola Preferred Device Com plem entary TMOS Field Effect Transistors MiniM OS™ d e vice s are an ad van ced se rie s o f po w e r M O SFETs
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DF2C02HD/D
MMDF2C02HD/D
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DIODE F2C
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S h ee t M M D F2C 03H D Medium Power Surface Mount Products Motorola Preferred Device Complementary TMOS Field Effect Transistors M in iM O S '" d evice s are an a d va n ce d s e rie s o f p o w e r M O S F E Ts
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DF2C03HD
10E-05
OE-04
OE-03
10E-01
DIODE F2C
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F2C02
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M MDF2C02E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMDF2C02E Medium Power Surface Mount Products Com plem entary TMOS Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs
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MDF2C02E/D
MMDF2C02E
F2C02
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Untitled
Abstract: No abstract text available
Text: FF 200 R 06 KL 2 Transistor Transistor Thermische Eigenschaften Rthjc Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values RthCK V c es le Ic rm P to t 600 V 200 A tp = 1 ms 400 A tc = 25°C 800 W Thermal properties
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600KFÂ
PF20DROiKF
0D02047
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Untitled
Abstract: No abstract text available
Text: FF 200 R 12 KF Therm al properties Therm ische Eigenschaften 0,044 C/W DC, pro Baustein / per module 0,088 C/W DC, pro Zweig / per arm 0,03 °C/W pro Baustein / per module 0,06 °C/W pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften Electrical properties
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Untitled
Abstract: No abstract text available
Text: FZ 200 R 12 KF 2 Transistor Transistor Therm ische Eigenschaften Thermal properties Rthjc DC, pro B a u ste in /p e r module 0,089 °CAN Elektrische Eigenschaften Electrical properties H öchstzulässige W erte Maximum rated values RthCK VcES lc 1200 V 200
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FF20QR12KF2
F300R1300
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10J24
Abstract: No abstract text available
Text: FZ 200 R 12 KF 2 Transistor Transistor Therm ische Eigenschaften Thermal properties Rthjc DC, pro B a u ste in /p e r module 0,089 °CAN Elektrische Eigenschaften Electrical properties H öchstzulässige W erte Maximum rated values RthCK V CES lc 1200 V 200
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FF20QR12KF2
F300R1300
10J24
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