1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
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C532 diode
Abstract: b16/41289
Text: Technische Information / technical information IGBT-Module IGBT-modules FP50R06W2E3_B11 EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode
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FP50R06W2E3
14BBFB'
A4F32
F223B
1231423567896A4BC3D6E23F
61F7DC
C532 diode
b16/41289
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V06T
Abstract: FZ600R12KP4
Text: Technische Information / technical information FZ600R12KP4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode * + , (-./ 0 !
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FZ600R12KP4
V06T
FZ600R12KP4
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2mo9
Abstract: FZ400R12KE4
Text: Technische Information / technical information FZ400R12KE4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode * + , - )./0 1 !
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FZ400R12KE4
2mo9
FZ400R12KE4
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fdfs6n303
Abstract: 6n303 L86Z SOIC-16 F011 F63TNR F852
Text: October 2001 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.
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FDFS6N303
fdfs6n303
6n303
L86Z
SOIC-16
F011
F63TNR
F852
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FZ600R12KE4
Abstract: 2N92 DZ60 DZ300
Text: Technische Information / technical information FZ600R12KE4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode * + , - )./0 1
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FZ600R12KE4
FZ600R12KE4
2N92
DZ60
DZ300
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BD3 diode
Abstract: 6n06e k4366
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
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IFS100B12N3T4
CEE32
1322D14
CEE326
732CF5CD
2313ECEC
1231423567896AB2CDEF1B6
54E36F
4112F
BD3 diode
6n06e
k4366
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IFS100B12N3E4
Abstract: C5363 IFS100B12N3E4B
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current
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IFS100B12N3E4
428654F4
BCFC24
E32DC
BCFC26
E32DC6
6734F
9C46E4
BC33694
1231423567896AB
C5363
IFS100B12N3E4B
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IFS150B12N3T4_B31
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS150B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
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IFS150B12N3T4
E1322
FF326DC
FC26E1
2313F
D36134
1231423567896AB
54F36C
4112CD3567896BE
IFS150B12N3T4_B31
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diode c24 06 6D
Abstract: LTC4098-3.6
Text: Technische Information / technical information FF450R12IE4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF450R12IE4
326A11
89F6F8
36F1322
B2CC36
DC336E
1231423567896AB
4112CD3567896EF
diode c24 06 6D
LTC4098-3.6
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fdfs6n303
Abstract: F011 F63TNR F852 L86Z SOIC-16
Text: January 2000 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.
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FDFS6N303
050lopment.
fdfs6n303
F011
F63TNR
F852
L86Z
SOIC-16
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474F3
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
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IFS75B12N3E4
E1322
FF326DC
FC26E1
2313F
D36134
1231423567896AB
54F36C
4112CD3567896BE
474F3
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FF600R12IE4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF600R12IE4
326A11
89F6F8
36F1322
B2CC36
DC336E
1231423567896AB
4112CD3567896EF
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LTC4098-3.6
Abstract: 6N16 l436 SXA-01GW-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
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IFS75B12N3T4
CEE32
1322D14
CEE326
732CF5CD
2313ECEC
1231423567896AB2CDEF1B6
54E36F
4112F
LTC4098-3.6
6N16
l436
SXA-01GW-P0.6
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BT 69D
Abstract: FBC 320
Text: Technische Information / technical information IGBT-Module IGBT-modules FF200R12MT4 EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorläufige Daten / preliminary data
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FF200R12MT4
CBB32
CBB326
223DB
2313BCBC
1231423567896A42BCD6ED3F
54B36
BT 69D
FBC 320
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LTC4098-3.6
Abstract: se666 k3332 edt0145.6 SEH-01T-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B32 MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense
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IFS75B12N3E4
428654F4
BCFC24
E32DC
BCFC26
E32DC6
6734F
9C46E4
327C53
1231423567896AB
LTC4098-3.6
se666
k3332
edt0145.6
SEH-01T-P0.6
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SO8 package fairchild
Abstract: fd303 f852
Text: August 1999 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology combines a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The
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FDFS6N303
SO8 package fairchild
fd303
f852
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W6 Diode
Abstract: No abstract text available
Text: SKN 2F50 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Fast Recovery Rectifier Diode SKN 2F50 Features # $%&'' *+,)()- *.&(/) # $+01 ()*+,)(2 # 34 1+ 5666 7 (),)(8) ,+'1&/) # 9)(%)1:* %)1&' *&8) ;:1. /'&88 # :<8='&1+( >.()&-)- 81=- ?$@ AB +( 5CDEFG 3HI $JHK &<+-) 1+ 81=-
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FIW6C56
FIW6C563HI
T566V
W6 Diode
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diode cross reference
Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE
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MA40401
MA40402
MA40404
MA40405
MA40406
MA40408
diode cross reference
schottky diode cross reference
MV3110
AH513
AH761
AH512
impatt diode
Gunn Diode
AH370
DMK-6606
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL5653P RECTRON DEVICE 1 550 nm OPTICAL FIBER CO M M U NICATIO NS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5653P is a 1 550 nm phase-shifted D F6 Distributed Feed-Back laser diode B u tte rfly package module w ith optical isola
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NDL5653P
NDL5653P
NDL5600D
NDL5650D
NDL5600D1
NDL5650D1
NDL5604P
NDL5603P
NDL5654P
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m867
Abstract: ntc m867
Text: SFH 482201 SIEMENS G aA lA s-LA S ER DIODE 250 mW Package Dimensions in mm 1. 2. 3 4. Peltier-Cooler + NTC NTC Laserdiode Cathode 5 6 7 8 Laserdiode Anode Monitor Diode Anode Monitor Diode Cathode Peltier-Cooler (-) FEATURES Maximum Ratings * Quantum-W ell Structure Manufactured
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00Q7MSb
m867
ntc m867
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Melcor peltier
Abstract: m867 peltier melcor
Text: SIEMENS SFH 482201 GaAlAs-LASER DIODE 250 mW Package Dimensions in mm 11.7 04 0 Laser M irror ! :;z 3 c : 7.0 1. 2. 3 4 Peltier-C ooler + NTC NTC Lase rdiode C athode 5 6 7 8 Laserdiode A node M onitor Diode Anode M onitor Diode C athode Peltier-C ooler (-)
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ST-12
Abstract: Scans-0017340
Text: I MAX.* R C A - I F6 DUPLEX-DIODE PENTODE T ie 1F6 is a duplex-diode pentode consisting of two diodes and a pen tode in a single bulb. It is recom mended for service as a combined detector, amplifier radio-frequency, intermediate-frequency or audio-frequency , and automatic-volume-control tube in
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Untitled
Abstract: No abstract text available
Text: SANSHA ELECTRIC MFG CO 37E D H 7 ^ 1 2 4 3 QQDDD77 5 H S E M J ;. ~Q DIODE MODULE SanRex Power Diode Module D F60B A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor
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QQDDD77
60Amp
DF60BA40
DF60BA60
00D0076
DF60BA
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