Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM IXFC 14N80P VDSS = 800 V = 8 A ID25 Ω RDS on ≤ 770 mΩ ≤ 250 ns trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS
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220TM
14N80P
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PDF
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IXFC 14N80
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM IXFC 14N80P VDSS = 800 V = 8 A ID25 Ω RDS on ≤ 770 mΩ ≤ 250 ns trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS
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Original
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220TM
14N80P
IXFC 14N80
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PDF
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14n60
Abstract: 14N60P IXYS DS
Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 600 V ID25 = 8 A Ω RDS on ≤ 630 mΩ ≤ 200 ns trr IXFC 14N60P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings
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Original
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ISOPLUS220TM
14N60P
02-27-06-C
14n60
14N60P
IXYS DS
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PDF
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HiPerFET Power MOSFETs
Abstract: 710 115 HiperFET ds99365
Text: Advanced Technical Information PolarTM HiPerFET Power MOSFET IXTR 200N10P VDSS ID25 RDS on Electrically Isolated Tab = 100 V = 133 A Ω = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions VDSS TJ = 25°C to 175°C
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Original
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200N10P
247TM
E153432
HiPerFET Power MOSFETs
710 115
HiperFET
ds99365
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PDF
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200N10P
Abstract: HiperFET ISOPLUS247
Text: Advanced Technical Information PolarTM HiPerFET Power MOSFET IXFR 200N10P VDSS ID25 RDS on Electrically Isolated Tab = 100 V = 133 A Ω = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C
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Original
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200N10P
ISOPLUS247
E153432
200N10P
HiperFET
ISOPLUS247
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PDF
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14n60
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION IXFC 14N60P PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS on = 600 V = 8 A ≤ 620 mΩ Ω Electrically Isolated Tab, N-Channel Enhancement Mode, Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C
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Original
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14N60P
14n60
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PDF
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200N1
Abstract: ISOPLUS247 200N10P TR 505 T200N
Text: PolarTM HiPerFET Power MOSFET IXTR 200N10P VDSS = 100 V ID25 = 120 A Ω 8 mΩ RDS on ≤ Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Recovery Diode Symbol Test Conditions VDSS TJ = 25° C to 175° C 100 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ
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Original
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200N10P
247TM
E153432
03-22-06-E
200N1
ISOPLUS247
200N10P
TR 505
T200N
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PDF
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Untitled
Abstract: No abstract text available
Text: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 120 A Ω RDS on ≤ 8 mΩ IXTR 200N10P Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Recovery Diode Symbol Test Conditions VDSS TJ = 25° C to 175° C 100 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ
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Original
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200N10P
247TM
E153432
03-22-06-E
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PDF
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QRS0680T30
Abstract: No abstract text available
Text: QRS0680T30 800 Amp/600 Volts Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 www.pwrx.com 724 925-7272 Fast Recovery Diode Module 800 Amperes / 600 Volts Description: Powerex Fast Recovery Diode Modules are designed for use in
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Original
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QRS0680T30
Amp/600
-1600A/
QRS06
680T30
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PDF
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anode common fast recovery diode dual
Abstract: CN24 fast recovery dual CC240610 CD24 CD240610 CD241210 CN240610 CN241210
Text: CN24_ _10 CD24_ _10 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Fast Recovery Dual Diode Modules 100 Amperes/600-1200 Volts Description: Powerex Fast Recovery Dual Diode Modules are designed for use in applications requiring fast
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Original
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Amperes/600-1200
-200A/
150oC
anode common fast recovery diode dual
CN24
fast recovery dual
CC240610
CD24
CD240610
CD241210
CN240610
CN241210
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PDF
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DIODE D29 -08
Abstract: CC240650 CC241250 CD24 CD240650 CD241250 CN24 CN240650 CN241250 DIODE D29
Text: CN24_ _50, CD24_ _50, CC24_ _50 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Fast Recovery Dual Diode Modules 50 Amperes/600-1200 Volts Description: Powerex Fast Recovery Dual Diode Modules are designed for use in applications requiring fast
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Original
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Amperes/600-1200
DIODE D29 -08
CC240650
CC241250
CD24
CD240650
CD241250
CN24
CN240650
CN241250
DIODE D29
|
PDF
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DIODE D29 -08
Abstract: CC241250 35M4 powerex cd DIODE D29 DUAL DIODE
Text: CN24_ _50, CD24_ _50, CC24_ _50 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Fast Recovery Dual Diode Modules 50 Amperes/600-1200 Volts H J Description: Powerex Fast Recovery Dual Diode Modules are designed for use in applications requiring fast
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Original
|
Amperes/600-1200
-100A/
150oC
DIODE D29 -08
CC241250
35M4
powerex cd
DIODE D29
DUAL DIODE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QR_3310001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Fast Recovery Diode Module 100 Amperes/3300 Volts A F D G H H G E B M THD (3 PLACES) Description: Powerex Fast Recovery Diode Modules are designed for use
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Original
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Amperes/3300
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PDF
|
Untitled
Abstract: No abstract text available
Text: QR_3310002 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Fast Recovery Diode Module 100 Amperes/3300 Volts A F D G H H G E B M THD (3 PLACES) Description: Powerex Fast Recovery Diode Modules are designed for use
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Original
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Amperes/3300
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PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: CC24_ _500N CN24_ _500N Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Super Fast Recovery Dual Diode Modules 50 Amperes/300-600 Volts H J A B J C G M H J (3 TYP.) N - DIA. R - M4 THD (3 TYP.) D Q L (2 TYP.) Q K E F P CC
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Original
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Amperes/300-600
500N/CN24_
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PDF
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tt 3043
Abstract: cp clare relay hg 1002 sol 4011 be 1N3888 clare mercury-wetted relay 1n3884 1N3890 clare mercury relay z037 1N3885
Text: MIL SPECS I C J Q C m a i H S OODBTOS 1 | MIL-S-19500/304B AMENDMENT 3 11 Auqust 1987 WOTSTDTfre-AMENDMENT 2 8 July 1985 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST-RECOVERY TYPES 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893,
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OCR Scan
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MIL-S-19500/304B
1N3885,
1N3886,
1N3888,
1N3890,
1N3891,
1N3893,
1N3890R,
1N3891R,
1N3893R
tt 3043
cp clare relay hg 1002
sol 4011 be
1N3888
clare mercury-wetted relay
1n3884
1N3890
clare mercury relay
z037
1N3885
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PDF
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SHXXC800
Abstract: sxhns100 HBN150 SXHNS150 Hirect SQ-870 hirect DIODE SA SXBN71 diode 0302C Hirect Diodes
Text: Engg. Publication 2 8/91 HIND RECTIFIERS LTD/ MKTG SbE D • 44^ I T ô M 0000020 b24 M H I N I Ordering Code : S A 34 B AR C 550 D SELECT A) Type of Diode R e ctifier Fast Recovery B) Voltage Class Code S SF V RRM required divided by 100 e.g. 15 will indicate 1500 volts VRRM
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OCR Scan
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l22433,
OM-15)
SHXXC800
sxhns100
HBN150
SXHNS150
Hirect
SQ-870
hirect DIODE SA
SXBN71
diode 0302C
Hirect Diodes
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N3889 thru 1N3893 Microsemi Corp. 7 The diode experts SANTA ANA, CA SCOTTSDALE, AZ F o r m ore inform ation call: 6 0 2 9 4 1-6 3 0 0 FEATURES 12 AMP SILICON FAST RECOVERY RECTIFIER • 1N 3 B 9 0 .1N 3 8 9 1. AND 1N3893 HAVE J A N . J A N T X A N D J A N T X V STAN D AR D
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OCR Scan
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1N3889
1N3893
1N3893
IL-S-19500/304
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PDF
|
TCA150
Abstract: No abstract text available
Text: 7 2 9 4 6 2 1 POWEREX INC D E § 7 B cl 4t,21 D0QE171 y / jp iA M n E r* ^ V V M Ec fflE A 3 f 7^ 33 JS ~ " D66EV Fast Switching Single Darlington Transistor Module D66DV Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 50 Amperes
|
OCR Scan
|
D0QE171
D66DV
D66EV
D66DV,
Amperes/500-
000B17L
TCA150
|
PDF
|
DUAL DIODE
Abstract: ALPS 925 CN24 BP107 CC240610 CC241210 CD24 CD240610 CD241210 CN240610
Text: t ’owerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 4 1 2 925-7272 rm verex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 CN24 7U CD24 CC24 10 10 Fast Recovery Dual Diode Modules 100 Amperes/600-1200 Volts Description
|
OCR Scan
|
BP107,
Amperes/600-1200
CN241210
DUAL DIODE
ALPS 925
CN24
BP107
CC240610
CC241210
CD24
CD240610
CD241210
CN240610
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 72 94 62 1 POWEREX INC Tñ De | 72T4b21 D0D51S7 T D 7~-33 -3s~ m um nex D66DS D66ES Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Fast Switching Single Darlington Transistor Module 20 Amperes 500-600-700 Volts Description O U TLIN E DRAWING
|
OCR Scan
|
72T4b21
D0D51S7
D66DS
D66ES
D66DS,
D66ES
Amperes/500-600-700
33-3s-
|
PDF
|
Untitled
Abstract: No abstract text available
Text: mßlEREX CS240650 CS241250 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Fast Recovery Single Diode Modules 50 Amperes/600-1200 Volts Description: OUTLINE DRAWING CS240650, CS241250 Fast Recovery Single Diode Modules 50 Amperes/600-1200 Volts
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OCR Scan
|
CS240650
CS241250
Amperes/600-1200
CS240650,
i4b21
|
PDF
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CN24
Abstract: dual DIODE 200A 600V CC240610 CN240610 CN241210 D-35 CC240610 fast recovery dual
Text: KNÆREX CN24_ _10 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15687-1800 724 925-7272 F s s t R ß C O V ß ty Dual Diode Modules 100 Amperes/600-1200 Volts Description: Powerex Fast Recovery Dual Diode Modules are designed for use in applications requiring fast
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OCR Scan
|
Amperes/600-1200
switchin00
CN24
dual DIODE 200A 600V
CC240610
CN240610
CN241210
D-35
CC240610 fast recovery dual
|
PDF
|
1b50a
Abstract: diode T35 DI 380 Transistor T35 diode D64EV6 Transistor AC 188 mrc 100a
Text: 7294621 POWEREX INC 1 ^ 1 7 2 ^ 4 ^ .5 1 m / w w O O O S lt.7 1 "7 ~ ~ 3 3 ~ 3 S " D64EV x Powerex, Inc., Hillis Street, Ybungwood, Pennsylvania 15697 412 925-7272 Fast Switching Single Darlington Transistor Module 50 Amperes 500-600-700 Volts Description
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OCR Scan
|
00021b?
D64EV
Ampere00
1b50a
diode T35
DI 380 Transistor
T35 diode
D64EV6
Transistor AC 188
mrc 100a
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PDF
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