Cystek
Abstract: MV4000 ZD5248
Text: Spec. No. : C326N3 Issued Date : 2003.04.14 Revised Date : Page No. : 1/12 CYStech Electronics Corp. Zener Diode Series ZD52XXBN3 SOT-23 Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board TA=25°C, Derate above 25°C Total Device Dissipation
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C326N3
ZD52XXBN3
OT-23
ZD5221B
ZD5222B
ZD5223B
ZD5225B
ZD5226B
ZD5227B
ZD52estion
Cystek
MV4000
ZD5248
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ZD5253
Abstract: ZD5221B ZD5222B ZD5223B ZD52XXBN3 ZD5226B marking 81J
Text: Spec. No. : C326N3 Issued Date : 2003.04.14 Revised Date : 2010.03.09 Page No. : 1/14 CYStech Electronics Corp. Zener Diode Series ZD52XXBN3 SOT-23 Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board TA=25°C, Derate above 25°C Total Device Dissipation
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C326N3
ZD52XXBN3
OT-23
ZD5221B
ZD5222B
ZD5223B
ZD5225B
ZD5226B
UL94V-0
ZD52XXBN3
ZD5253
ZD5221B
ZD5222B
ZD5223B
ZD5226B
marking 81J
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protective shroud
Abstract: 2B20 DRIVING A BI-COLOUR LED Circuit 10-2602.3205L EAO series 71 illumination led EAO 71 series led IEC 60947-5-5 ip67
Text: EAO – Your Expert Partner for Human Machine Interfaces EAO Product Information Series 84 Switches and Indicators 84 Contents 84 Description . 3 Product Assembly . 4
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Untitled
Abstract: No abstract text available
Text: MA4SW110 MA4SW210 MA4SW310 Broadband Monolithic Silicon PIN Diode Switches Rev 5.0 Features MA4SW110 SPST • Broad Bandwidth • Specified up to 20 GHz • Usable to 26.5 GHz • Low Insertion Loss / High Isolation • Rugged, Fully Monolithic, Glass Encapsulated
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MA4SW110
MA4SW210
MA4SW310
MA4SW110
MA4SW110,
MA4SW210,
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DFY2R902
Abstract: DFY2R902CR947BHG MuRata Gigafil XMFP1-M3 DFY21R88 DFY2R902CR947 DFC3r LFJ30-03 Ferrite Circulators at 15 ghz MQE9
Text: This is the PDF file of catalog No.K09E-4. No.K09E4.pdf 99.8.31 Murata Products for Mobile Communications GSM DCS1800 PCN E-TACS DECT CT-2 PCS (IS136) AMPS/ADC PCS (GSM) CDMA800 PCS (CDMA) ISM900 PDC800 PDC1500 NTACS/CDMA PHS GSM CDMA E-TACS/AMPS PHS DECT
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K09E-4.
K09E4
DCS1800
IS136)
CDMA800
ISM900
PDC800
PDC1500
DFY2R902
DFY2R902CR947BHG
MuRata Gigafil
XMFP1-M3
DFY21R88
DFY2R902CR947
DFC3r
LFJ30-03
Ferrite Circulators at 15 ghz
MQE9
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PSD300-200
Abstract: Power Snubber Diode
Text: SIYU R PSD300-200 功率缓冲二极管 Power Snubber Diode 1.特征 Features ● 小型化，高可靠性 Miniaturization，High Reliability ● 替代传统的 RCD 缓冲电路 Substitution traditional RCD snubber circuit ● 钳位电压稳定 Steady Clamping voltage
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PSD300-200
DO15L
PSD300-200
Power Snubber Diode
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PSD200-200
Abstract: Power Snubber Diode
Text: SIYU R PSD200-200 功率缓冲二极管 Power Snubber Diode 1.特征 Features ● 小型化，高可靠性 Miniaturization，High Reliability ● 替代传统的 RCD 缓冲电路 Substitution traditional RCD snubber circuit ● 钳位电压稳定 Steady Clamping voltage
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PSD200-200
PSD200-200
Power Snubber Diode
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SWITCHPLEXER
Abstract: DFC2R MuRata Gigafil CE053R836DCB DFC31R DFY2R dfc3r881 CFUXC450 DFC21R89 LMC36
Text: This is the PDF file of catalog No.K09E-5. No.K09E5.pdf 00.1.31 Murata Products for Mobile Communications GSM DCS1800 E-TACS DECT CT-2 W-CDMA ISM2400 PCS IS136 AMPS/ADC PCS (GSM) CDMA800 PCS (CDMA) ISM900 ISM2400 PDC800 J-CDMA ISM2400 GSM CDMA PHS E-TACS AMPS DECT
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K09E-5.
K09E5
DCS1800
ISM2400
IS136)
CDMA800
ISM900
PDC800
SWITCHPLEXER
DFC2R
MuRata Gigafil
CE053R836DCB
DFC31R
DFY2R
dfc3r881
CFUXC450
DFC21R89
LMC36
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A1049
Abstract: A10495 four-layer diode POWER AMPLIFIER CIRCUIT DIAGRAM 10000 HSOP28H ILA07171 capacitor mylar transistor 355 equivalent A1049 transistor
Text: Ordering number : ENA1049 Monolithic Linear IC LA49101H Audio Output for TV Application 10Wx1ch High-Effciency Power Amplifier IC Overview The LA49101H is a high-effciency 1-channel 10W BTL monaural power amplifier IC. Increases in the number of external components are held to a minimum by adopting both a signal-following type
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ENA1049
LA49101H
LA49101H
HSOP28H
A1049-11/11
A1049
A10495
four-layer diode
POWER AMPLIFIER CIRCUIT DIAGRAM 10000
ILA07171
capacitor mylar
transistor 355 equivalent
A1049 transistor
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A1049
Abstract: TRANSISTOR A1049
Text: Ordering number : ENA1049 Monolithic Linear IC LA49101H Audio Output for TV Application 10Wx1ch High-Effciency Power Amplifier IC Overview The LA49101H is a high-effciency 1-channel 10W BTL monaural power amplifier IC. Increases in the number of external components are held to a minimum by adopting both a signal-following type
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ENA1049
LA49101H
LA49101H
HSOP28H
A1049-11/11
A1049
TRANSISTOR A1049
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Untitled
Abstract: No abstract text available
Text: NTTS2P03R2 Power MOSFET -2.48 Amps, -30 Volts P−Channel Enhancement Mode Single Micro8t Package Features • • • • • http://onsemi.com Ultra Low RDS on Higher Efficiency Extending Battery Life Miniature Micro8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery
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NTTS2P03R2
Drain-to-25
NTTS2P03R2
0E-05
0E-04
0E-03
0E-02
0E-01
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G3VM-355C
Abstract: G3VM-355CR G3VM-355F G3VM-355FR 355C FR 152 diode
Text: MOS FET Relays G3VM-355C/CR/F/FR New MOS FET Relays with Both SPSTNO and SPST-NC Contacts Incorporated in a Single DIP Package. General-purpose Models Added. • SPST-NO/SPST-NC models now included in the 350-V load voltage series. • Continuous load current of 120 mA 90 mA .
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G3VM-355C/CR/F/FR
G3VM-355xpiration
G3VM-355C
G3VM-355CR
G3VM-355F
G3VM-355FR
355C
FR 152 diode
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C124 EST
Abstract: transistor c124 C124 E S S transistor C124 E S W transistor IRGPC40FD2
Text: PD - 9.1113 International ïôr Rectifier IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT Vces = • Switching-loss rating includes all “tail" losses • H EX FR E D soft ultrafast diodes • Optimized for medium operating frequency 1 to
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IRGPC40FD2
O-247AC
C-124
C124 EST
transistor c124
C124 E S S transistor
C124 E S W transistor
IRGPC40FD2
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SS3001
Abstract: No abstract text available
Text: 1 F I 1 5 B - 6 1 5 Q a * ± a a a $ frf* - FAST RECOVERY DIODE MODULE • f ë J I ^ Features • a s m a e i n i ^ j s v .' • Short Reverse Recovery Time Variety of Connection Menu • Insulated Type ! A pplications Arc-W elders • 7 U —T fr- l —
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50/60Hz
19S24-%
I95t/R89)
SS3001
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diode b24a
Abstract: diode v3e Mitsubishi transistor QM600H
Text: MITSUBISHI TRANSISTOR MODULES f QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE APPLICATION Robotics, Forklifts, W elders OUTLINE DRAWING 8t CIRCUIT DIAGRAM Dimensions in mm 9e B°-r—C - V 'A - — wE O Ô BX M4 2 - 210 OE | S MITSUBISHI TRANSISTOR MODULES
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QM600HD-M
diode b24a
diode v3e
Mitsubishi transistor
QM600H
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FR 151 diode
Abstract: HJC.1 siemens mosfet BSM 50 diode fr 207
Text: SIEMENS SIMOPAC MOSFET Modules VDS lD BSM 151 F C BSM 151 FR = 500 V = 56 A ^DS(on) = 0.11 Q • • • • • • • Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 1 a 1)
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C67076-A1050-A2
C67076-A1056-A2
FR 151 diode
HJC.1
siemens mosfet BSM 50
diode fr 207
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSM150GB120DN2E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate BSM150GB120DN2E3166 h 1200V 210A 111 Type Package Ordering Code HALF-BRIDGE 2
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BSM150GB120DN2E3166
C67076-A2112-A70
ID0fl020fl
023Sb05
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MA4SW110
Abstract: No abstract text available
Text: MA4SW110, MA4SW210, MA4SW310 M/A-COM Monolithic PIN Diode Switches A IÂ C G M M R F & Microwave Products Features • • • Borad Bandwidth • Specified up to 20 GHz • Usable to 26.5 GHz Low Insertion Loss / High Isolation Rugged, Fully Monolithic, Glass Encapsulated
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MA4SW110,
MA4SW210,
MA4SW310
MA4SW110
MA4SW110
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u212
Abstract: IRFR122 u210 irfr210 U2-12
Text: tME T> SAMSUNG ELECTRONICS INC m 7Tb4142 GD1233S ñ3ñ « S n G K IR F R 2 1 0/212 IR F U 2 1 0/212 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R q s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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7Tb4142
DD1233S
IHFR210/212
IRFU210/212
IRFR210/U210
IRFR122/U212
IRFR210/21
IRFU210/212
IRFR212/U212
u212
IRFR122
u210
irfr210
U2-12
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pin diagram of ic 74ls138
Abstract: IC 74ls138 and gate 74LS138
Text: SANYO SEMI CONDUCTOR CORP S S 1 8 I¡IB B ii LC74HC138M 1EE D 1 T'H TD Tb CT~fc7 -2-i - S S iß OG-QHtiflS CMOS High-Speed Standard Logic LC74HC Series 3035A - 3 to 8 - Line Decoder £ 2100A ' Features ' • The LC74HC138M decodes a three-bit address to one-of-eight active-low outputs.
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LC74HC138M
LC74HC
LC74HC138M
74LS138)
54LS/74LS
035A-M161C
LC74HC138.
pin diagram of ic 74ls138
IC 74ls138
and gate 74LS138
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IC 74ls138
Abstract: pin diagram of ic 74ls138 CIH7 ic 74ls138 details TTL 74ls138 6ba diode and gate 74LS138 74LS138 LC74HC138 LC74HC138M
Text: SANYO SEMI CONDUCTOR CORP Ä llÜ lllllÄ LC74HC138M 1EE D 1 T'H TD Tb OH7-2-I-SS iß OG-QHtiflS CMOS High-Speed Standard Logic LC74HC Series 3035A - 3 to 8 -Line Decoder £ 2100A ' Features ' • The LC74HC138M decodes a three-bit address to one-of-eight active-low outputs.
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LC74HC
LC74HC138M
74LS138)
54LS/74LS
035A-M161C
LC74HC138.
5306KI/3136KI,
IC 74ls138
pin diagram of ic 74ls138
CIH7
ic 74ls138 details
TTL 74ls138
6ba diode
and gate 74LS138
74LS138
LC74HC138
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diode fr 210
Abstract: 1506 diode diode s 360
Text: SIEMENS Silicon Switching Diode Array BGX 50 A • Bridge configuration • High-speed switch diode chip Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage Vr 50 V Peak reverse voltage V rm 70 Forward current If 140 mA Total power dissipation, Ts = 74 ‘ C
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Untitled
Abstract: No abstract text available
Text: ê235bOS 0Û20c]a4 M El SIEG SlEIVli SIEMENS AKTIENGESELLSCHAF M7E D ; T - - 3 7 -3 Ì BSM 151 F C BSM 151 FR SIMOPAC MOSFET Modules Vos Id = 500 V = 56 A ^ D S (o n ) = 1 Q • Pow er m odule • Sin gle switch • FREDFET • N channel • Enhancem ent m ode
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235bOS
fl235LiG5
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Untitled
Abstract: No abstract text available
Text: DMV series DAMPER + MODULATION DIODE FOR VIDEO MAIN PRODUCT CHARACTERISTICS MODUL DAMPER I f a v 3A&6A 5A&6A V rrm 600 V 1500 V trr 50 ns 135 ns (max) 1.5 V 1.35 V Vf DAMPER MODULATION FEATURES AND BENEFITS • ■ ■ ■ ■ ■ ■ ■ FULL KIT IN ONE PACKAGE
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