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    DIODE GERMANIUM 1N276 Search Results

    DIODE GERMANIUM 1N276 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE GERMANIUM 1N276 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    diode germanium 1n276

    Abstract: 1N276
    Text: 1N276 w w w. c e n t r a l s e m i . c o m GERMANIUM SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N276 is a gold bonded germanium diode mounted in a hermetically sealed glass case, designed for switching applications. MARKING: FULL PART NUMBER DO-7 CASE


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    1N276 1N276 0mW/10Â 30-April diode germanium 1n276 PDF

    JVR 431 0.7

    Abstract: 1N276 A145C thermal 141L t41l
    Text: ● l_l r NCH-POUNO MIL-S-19500/192B 6 October 1989 141L-S-19500/192A 19 Aprfl 1968 MILITARY I SPECIFICATION SEMICONOUCTOR DEVICE, OIOOE, GERMANIUM, WITCHING TYPE 1N276, JAN, JANTX, AND JANTXV I This specification Agencies of the 1. is approved Department


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    MIL-S-19500/192B 141L-S-19500/192A 1N276, JVR 431 0.7 1N276 A145C thermal 141L t41l PDF

    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


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    UJT-2N2646 PIN DIAGRAM DETAILS

    Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
    Text: Motorola TVS/Zener Device Data Alphanumeric Index of Part Numbers 1 Cross Reference and Index 2 Selector Guide for Transient Voltage Suppressors and Zener Diodes 3 Transient Voltage Suppressors Axial Leaded Data Sheets 4 Transient Voltage Suppressors Surface Mounted Data Sheets


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    Germanium diode

    Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
    Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes


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    1N34A 1N38A 1N60A 1N100A 1N270 1N276 1N277 1N456 1N459 1N456A Germanium diode 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode PDF

    diode germanium 1n276

    Abstract: Germanium Schottky diode D0Q0330 DSAIH0002536
    Text: B K C INTERNATIONAL 1 1 7 ^ 0 3 D0Q0330 h 30E D O 3 .-O7 FEATURES • • • ♦ Solder plate DO-7 package Very low noise level Non-ESD sensitive >15 KV Gold Bonded Germanium Diode 1N276 o SPECIAL FEATURES & • Thirty years of proven reliability « Ideally suited for schottky diode replacement;


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    D0Q0330 1N276 MIL-S-19500 300nS diode germanium 1n276 Germanium Schottky diode DSAIH0002536 PDF

    4026 IC

    Abstract: CI 4016 in276 1N276 IR411 ic 4081 ci 4081
    Text: niL SPECS IC | G D D D 1 5 S □□57Bclb 1 | I INCH-PQ1JND~T MIL-S-19500/192B 6 October 1989 superseding-MIL-S-19500/192A 19 April 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N276, JAN, JANTX, ANO JANTXV This specification 1s approved for use by all Departments and


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    GDDG15S MIL-S-19500/192B MIL-S-19500/192A 1N276, MIL-S-19500. MIL-S-19500 4026 IC CI 4016 in276 1N276 IR411 ic 4081 ci 4081 PDF

    1n45b

    Abstract: 1N48 diode T11G T26G IN283 T13G 1N849 DIODE 1N418 IN457A t20g
    Text: 86D 0 0 3 3 5 _ 3 8 6 9 7 2 0 GENERAL DIO D E CORP GENERAL DIODE CORP fit ù 7 D DÎT| 3flfa17BG 0000335 fl J “ GERMANIUM DIODES Case Style — D0-7 TYPE \ \•% % 1N34 1N34A 1N38 1N38 1N3BA 75 75 36 125 125 1.0 1.0 1.0 1.0 1.0 1N38B 1N44 1N45


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    3flL1750 1N34A 1N38B 1N52A 1N54A 1N251* 1N252. 1N434 1N458 1N456A 1n45b 1N48 diode T11G T26G IN283 T13G 1N849 DIODE 1N418 IN457A t20g PDF

    to3a

    Abstract: 000D1E7 N95 DIODE 1N111 germanium diode 1n69 N70a 1N69A diode 1N62 gold bonded germanium diode
    Text: "I 0<S B K C INTERNATIONAL 30E D BKC International Electronics Inc. • 117^03 D00Q3E5 2 ■ ' T ’O l - O '? 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 M oldbondeddiodes TYPE 1N60A


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    DQDD35S 1N60A 150mA 300nS to3a 000D1E7 N95 DIODE 1N111 germanium diode 1n69 N70a 1N69A diode 1N62 gold bonded germanium diode PDF

    SEM 5027A

    Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
    Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES


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    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


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    FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159 PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C PDF

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    1n52408

    Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
    Text: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which


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    301PT1115 302PT1115 303PT1115 311PT1110 312PTI110 319PTI110 327PTI110 351PT1115 353PT1115 1n52408 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    st178

    Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
    Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment


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    Sylvan58MC 09A001-00 66X0003-001 50746A 68X0003 68X0003-001 T-E0137 93B3-3 93B3-4 st178 diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF