BAP51-02
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP51-02
OD523
MAM405
OD523)
125004/00/02/pp6
BAP51-02
BP317
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109 DIODE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP50-02
OD523
MAM405
OD523)
613512/01/pp8
109 DIODE
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17033
Abstract: VISHAY sot23 device Marking DC 17417
Text: BAW56 VISHAY Vishay Semiconductors Dual Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type designation BAL99, a
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BAW56
BAL99,
BAV99,
BAV70.
OT-23
30k/box
30k/box
D-74025
10-Jul-03
17033
VISHAY sot23 device Marking DC
17417
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BAV70-GS18
Abstract: BAL99 BAV70 BAV70-GS08 BAV99 BAW56
Text: BAV70 VISHAY Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common cathode • This diode is also available in other configurations including:a dual common anode to cathode with
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BAV70
BAV99,
BAW56,
BAL99.
OT-23
BAV70-GS18
BAV70-GS08
D-74025
09-Jul-04
BAL99
BAV70
BAV70-GS08
BAV99
BAW56
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Untitled
Abstract: No abstract text available
Text: BAW56 VISHAY Vishay Semiconductors Dual Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type designation BAL99, a
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BAW56
BAL99,
BAV99,
BAV70.
OT-23
BAW56
BAW56-GS18
BAW56-GS08
D-74025
27-Apr-04
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BAW56 GS18
Abstract: marking code JD BAW56 BAL99 BAV70 BAV99 BAW56 BAW56-GS08
Text: BAW56 VISHAY Vishay Semiconductors Small Signal Switching Diode, Dual Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type designation BAL99, a
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BAW56
BAL99,
BAV99,
BAV70.
OT-23
BAW56-GS18
BAW56-GS08
D-74025
09-Jul-04
BAW56 GS18
marking code JD BAW56
BAL99
BAV70
BAV99
BAW56
BAW56-GS08
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1N4448
Abstract: 1N4448W IMBD4448 LL4448
Text: 1N4448W VISHAY Vishay Semiconductors Small Signal Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode. • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the type
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1N4448W
DO-35
1N4448,
LL4448,
OT-23
IMBD4448.
OD-123
D3/10
D-74025
10-Sep-03
1N4448
1N4448W
IMBD4448
LL4448
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Untitled
Abstract: No abstract text available
Text: 1N4448W VISHAY Vishay Semiconductors Small Signal Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode. • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the type
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1N4448W
DO-35
1N4448,
LL4448,
OT-23
IMBD4448.
OD-123
D3/10
D-74025
12-May-03
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Untitled
Abstract: No abstract text available
Text: LASER DIODE Laser diode L9278-14 TOSA type, 1310 nm FP Fabry-Perot laser diode Features Applications l Optical fiber communication l Gigabit ethernet l Fiber channel l 1310 nm FP (Fabry-Perot) laser diode l φ1.25 mm sleeve type TOSA (Transmitter Optical
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L9278-14
SE-171
KLED1041E01
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Untitled
Abstract: No abstract text available
Text: 1N4448W VISHAY Vishay Semiconductors Small Signal Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode. • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the type
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PDF
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1N4448W
DO-35
1N4448,
LL4448,
OT-23
IMBD4448.
OD-123
1N4448W
1N4448W-GS18
1N4448W-GS08
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L9278-14
Abstract: SE-171
Text: LASER DIODE Laser diode L9278-14 TOSA type, 1310 nm FP Fabry-Perot laser diode Features Applications l Optical fiber communication l Gigabit ethernet l Fiber channel l 1310 nm FP (Fabry-Perot) laser diode l φ1.25 mm sleeve type TOSA (Transmitter Optical
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L9278-14
SE-171
KLED1041E01
L9278-14
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1N4448
Abstract: 1N4448W-V-GS18 IMBD4448 LL4448 1n4448w-v
Text: 1N4448W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode e3 • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the
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1N4448W-V
DO-35
1N4448,
LL4448,
OT-23
IMBD4448
2002/95/EC
2002/96/EC
OD-123
1N4448
1N4448W-V-GS18
IMBD4448
LL4448
1n4448w-v
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VISHAY diode MARKING
Abstract: No abstract text available
Text: BAV70 VISHAY Vishay Semiconductors Dual Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common cathode • This diode is also available in other configurations including:a dual common anode to cathode with type designation BAV99, a dual common anode
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BAV70
BAV99,
BAW56,
BAL99.
OT-23
E8/10
D-74025
10-Jul-03
VISHAY diode MARKING
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1N4448
Abstract: 1N4448W-V-GS18 IMBD4448 LL4448 SOT23 DIODE marking CODE AV ll4448 vishay 1n4448w-v
Text: 1N4448W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode e3 • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the
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1N4448W-V
DO-35
1N4448,
LL4448,
OT-23
IMBD4448
2002/95/EC
2002/96/EC
OD-123
1N4448
1N4448W-V-GS18
IMBD4448
LL4448
SOT23 DIODE marking CODE AV
ll4448 vishay
1n4448w-v
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Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065
O-220AC
O-220AC
STPSC10H065D
STPSC10H065DI
STPSC10H065B-TR
STPSC10H065G-TR
DocID023604
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BAS70-07S
Abstract: BAS70-08S
Text: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF
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BAS70-07S
BAS70-08S
OT323-6L
BAS70-08S
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marking D33
Abstract: BAS70-07S BAS70-08S
Text: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF
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BAS70-07S
BAS70-08S
OT323-6L
BAS70-08S
marking D33
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Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC6H065
O-220AC
STPSC6H065D
STPSC6H065G-TR
DocID023247
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Untitled
Abstract: No abstract text available
Text: 1N4151W VISHAY Vishay Semiconductors Small Signal Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the MiniMELF case with the type
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1N4151W
DO-35
1N4151,
LL4151.
OD-123
1N4151W-GS18
1N4151W-GS08
D-74025
23-Apr-04
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Untitled
Abstract: No abstract text available
Text: 1N4151W VISHAY Vishay Semiconductors Small Signal Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the MiniMELF case with the type
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1N4151W
DO-35
1N4151,
LL4151.
OD-123
1N4151W
1N4151W-GS18
1N4151W-GS08
D-74025
12-Feb-04
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1N4448W-V-GS18
Abstract: 1N4448W-V-GS08
Text: 1N4448W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode. e3 • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the
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1N4448W-V
DO-35
1N4448,
LL4448,
OT-23
IMBD4448.
2002/95/EC
2002/96/EC
OD-123
1N4448W-V
1N4448W-V-GS18
1N4448W-V-GS08
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Untitled
Abstract: No abstract text available
Text: 1N4151WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode e3 • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the MiniMELF case with
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1N4151WS-V
DO-35
1N4151,
LL4151.
2002/95/EC
2002/96/EC
OD-323
1N4151WS-V
1N4151WS-V-GS18
1N4151WS-V-GS08
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Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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PDF
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STPSC10H065
O-220AC
STPSC10H065D
STPSC10H065G-TR
DocID023604
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1N4151
Abstract: 1N4151WS-V 1N4151WS-V-GS08 1N4151WS-V-GS18 DO35 LL4151
Text: 1N4151WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode e3 • This diode is also available in other case styles including the DO35 case with the type designation 1N4151, and the MiniMELF case with
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1N4151WS-V
1N4151,
LL4151.
2002/95/EC
2002/96/EC
OD323
GS18/10
GS08/3
1N4151WS-V-GS18
1N4151
1N4151WS-V
1N4151WS-V-GS08
DO35
LL4151
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