Gex DIODE
Abstract: Gex 66 diode GEX 51 DIODE GEX 54 DIODE marking code KE diode diode marking GDE 38 SMJ30 diode Marking Code lm tvs diode GEP 86 A marking diode KE
Text: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage
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C5DB02
Gex DIODE
Gex 66 diode
GEX 51 DIODE
GEX 54 DIODE
marking code KE diode
diode marking GDE 38
SMJ30
diode Marking Code lm tvs
diode GEP 86 A
marking diode KE
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GEX 51 DIODE
Abstract: Gex DIODE Gex 66 diode marking code SM diode 218 Gex marking code KE diode diode GEP 86 A DIODE gde 18 diode gde 78 Diode GEG
Text: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage
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C5DB02
GEX 51 DIODE
Gex DIODE
Gex 66 diode
marking code SM diode
218 Gex
marking code KE diode
diode GEP 86 A
DIODE gde 18
diode gde 78
Diode GEG
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PK P6KE 200A
Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
Text: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop
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EC111
EC2111v1E0804
PK P6KE 200A
SLD30-018
436 6V8A
1.5KA36CA
N10H
kt 201-500
P6KA36CA
P6KA 335
Diode N10Z
P6KA18CA
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Untitled
Abstract: No abstract text available
Text: Opto Semiconductors GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 Area not flat 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.8 0.4 0.6 0.4 0.6 0.4 5.7 5.1 29 27 Chip position Cathode Diode Collector (Transistor) fex06260 1.8 1.2 GEX06260
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fex06260
GEX06260
OHR01041
OHR01882
OHR00860
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TRANSISTOR K 314
Abstract: GEX06630 Q62702-P1668 Q62702-P1675 Q62702-P1755 Q62702-P1756 Q62702-P1757 Q62702-P1758
Text: SFH 314 SFH 314 FA NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 314 SFH 314 FA feo06652 .Neu: Area not flat 1.8 1.2 5.9 5.5 4.0 3.4 0.6 0.4 Chip position GEX06630 feof6652 29.5 27.5 Cathode Diode Collector (Transistor) 6.9 6.1 5.7 5.5
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feo06652
GEX06630
feof6652
OHF02340
OHF02338
OHF02342
TRANSISTOR K 314
GEX06630
Q62702-P1668
Q62702-P1675
Q62702-P1755
Q62702-P1756
Q62702-P1757
Q62702-P1758
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GEX06260
Abstract: Q62703-Q1031 Q62703-Q1819 Q62703-Q1820
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 Area not flat 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 0.8 0.4 1.8 1.2 29 27 Cathode Diode Collector (Transistor) 0.6 0.4 5.7 5.1 Chip position GEX06260 fex06260 2.54 mm spacing 0.6 0.4 Approx. weight 0.5 g
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GEX06260
fex06260
OHR01041
OHR01882
OHR00860
GEX06260
Q62703-Q1031
Q62703-Q1819
Q62703-Q1820
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GEX06260
Abstract: Q62703-Q1031 Q62703-Q1819 Q62703-Q1820 OHR01882 transistor SR 51
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 Area not flat 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 0.8 0.4 1.8 1.2 29 27 Cathode Diode Collector (Transistor) 0.6 0.4 5.7 5.1 Chip position GEX06260 fex06260 2.54 mm spacing 0.6 0.4 Approx. weight 0.5 g
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GEX06260
fex06260
OHR01041
OHR01882
OHR00860
GEX06260
Q62703-Q1031
Q62703-Q1819
Q62703-Q1820
OHR01882
transistor SR 51
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Untitled
Abstract: No abstract text available
Text: GEXM66 Diodes Germanium Diode Military/High-RelN I O Max.(A) Output Current15m V(RRM)(V) Rep.Pk.Rev. Voltage5.0 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage600m @I(FM) (A) (Test Condition)5.0m I(RM) Max.(A) Reverse Current50u @V(R) (V)(Test Condition)1.0
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GEXM66
Current15m
Voltage600m
Current50u
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GEX06260
Abstract: Q62702-P1667 Q62702-P1674 Q62702-P1751 Q62702-P1752 Q62702-P1753 Q62702-P1754
Text: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 313 SFH 313 FA fex06626 .Neu: Area not flat 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.8 0.4 0.6 0.4 1.8 1.2 29 27 0.6 0.4 5.7 5.1 Chip position GEX06260 fexf6626 Cathode Diode Collector (Transistor)
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fex06626
GEX06260
fexf6626
OHF02336
OHF02342
OHF02340
GEX06260
Q62702-P1667
Q62702-P1674
Q62702-P1751
Q62702-P1752
Q62702-P1753
Q62702-P1754
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Untitled
Abstract: No abstract text available
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 5.0 4.2 Anode 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.6 0.4 0.8 0.4 29 27 SFH 495 P SFH 4552 3.85 3.35 0.6 0.4 Area not flat fex06971 1.8 1.2 Chip position GEX06971 Area not flat 29.5 27.5 Cathode Diode Collector (Transistor)
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GEX06971
GEX06630
OHF00328
OHF00329
OHF00330
OHF00441
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80 ESP 12
Abstract: GEX06630 GEX06971 Q62702-P5054 Q62703-Q7891 OHF00329 transistor sr 61
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 5.0 4.2 Anode 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.6 0.4 0.8 0.4 29 27 SFH 495 P SFH 4552 3.85 3.35 0.6 0.4 Area not flat fex06971 1.8 1.2 Chip position GEX06971 Area not flat 29.5 27.5 Cathode Diode Collector (Transistor)
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fex06971
GEX06971
feo06652
GEX06630
OHF00328
OHF00329
OHF00330
OHF00441
80 ESP 12
GEX06630
GEX06971
Q62702-P5054
Q62703-Q7891
OHF00329
transistor sr 61
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GDE 13a DIODE
Abstract: diode marking GDE 38 diode 009 6V8A marking diode 47C sot23 NEC D 882 p GEX 36A DIODE Diode Gfg 6f MOTOROLA 727 36A Diode GFP 56A GFM 16A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOTĆ23 Dual Monolithic Common Anode Zener MMBZ5V6ALT1 ADDITIONAL VOLTAGES AVAILABLE Transient Voltage Suppressor For ESD Protection Motorola Preferred Device This dual monolithic silicon zener diode is designed for applications requiring transient
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OT-23
GDE 13a DIODE
diode marking GDE 38
diode 009 6V8A
marking diode 47C sot23
NEC D 882 p
GEX 36A DIODE
Diode Gfg 6f
MOTOROLA 727 36A
Diode GFP 56A
GFM 16A
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bu 450 GDF
Abstract: SMA marking code LG sma marking code kn marking sm DO-214AA lg73 J15A marking sm marking SM 98 sma MARKING mp BQ 714
Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
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C3B04
bu 450 GDF
SMA marking code LG
sma marking code kn
marking sm DO-214AA
lg73
J15A
marking sm
marking SM 98
sma MARKING mp
BQ 714
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bu 450 GDF
Abstract: diode gde 78 J15A GEZ DIODE SMA marking code LG GGG 92 marking sm J11A J14A J16A
Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
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C3B04
bu 450 GDF
diode gde 78
J15A
GEZ DIODE
SMA marking code LG
GGG 92
marking sm
J11A
J14A
J16A
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GEZ 44 A diode
Abstract: No abstract text available
Text: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ-HR series SMCJ-HR Series RoHS Description TVS Diode Arrays SPA Family of Products Uni-directional The SMCJ-HR High Reliability series is designed specifically to protect sensitive electronic equipment from
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E230531
DO-214AB
16mm/7â
RS-481
GEZ 44 A diode
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Untitled
Abstract: No abstract text available
Text: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ-HRA series SMCJ-HRA Series RoHS Description TVS Diode Arrays SPA Family of Products Uni-directional The SMCJ-HRA High Reliability series is designed specifically to protect sensitive electronic equipment from
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-PRF-19500.
DO-214AB
16mm/13â
RS-481
16mm/7â
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diode BFT 99
Abstract: Diode GEP 5C Diode GFT DIODE BFT marking code GEZ DIODE GEZ 304 DIODES transient voltage suppressor diode diode marking GDE on semiconductor
Text: Features • ■ ■ Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214C
DO-214AB
diode BFT 99
Diode GEP 5C
Diode GFT
DIODE BFT marking code
GEZ DIODE
GEZ 304 DIODES
transient voltage suppressor diode
diode marking GDE on semiconductor
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GEZ DIODES
Abstract: diode BFT 99 GFX DIODE GHM PF t54c 214B CD214C CD214C-T170A CD214C-T26A diode smc bfk
Text: Features • ■ ■ Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214C
DO-214AB
bid004)
e/IPA0408
GEZ DIODES
diode BFT 99
GFX DIODE
GHM PF
t54c
214B
CD214C-T170A
CD214C-T26A
diode smc bfk
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SFH 910
Abstract: SFH 4332
Text: High Power VCSEL-Laserdiode 920 nm im 3 mm Radial-Gehäuse High-Power VCSEL Laser Diode (920 nm) in 3 mm Radial Package SFH 4332 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarotsendediode in VCSEL-(Vertical Cavity Surface Emitting Laser) Technologie
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OHF00889
OHF00896
GEX06250
GPL06930
SFH 910
SFH 4332
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH415 SFH 416 Area not flat o Cathode Diode Collector (Transistor) CO (O (O o X 0) GEX06630 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale
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SFH415
GEX06630
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transistor 495
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 5.9 5.5 0.6 0.4 GEX06971 Area not flat 5-9. 5.5 'M p ' 0.6 0.4 Cathode Diode GEX06630 Collector (Transistor) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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GEX06971
GEX06630
transistor 495
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Untitled
Abstract: No abstract text available
Text: SIEMENS Neu: NPN-Silizium-Fototransistor SFH 313 SFH 313 FA New: Silicon NPN Phototransistor .O -'“ ’ Area not flat 9.0 5.9 5.5 0.6 0.4 5.1 Chip position Cathode Diode Collector (Transistor) GEX06260 M aße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified.
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GEX06260
313FA,
OHFD2336
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Untitled
Abstract: No abstract text available
Text: SIEMENS Neu: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit New: Silicon PIN Photodiode with Very Short Switching Time SFH 214 SFH 214 FA Area not flat c\l in CD CD oo CD Cathode Diode GEX06630 Collector (Transistor) CM Ifi CD CO 'S CD Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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GEX06630
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Untitled
Abstract: No abstract text available
Text: SIEMENS Neu: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit New: Silicon PIN Photodiode with Very Short Switching Time SFH 213 SFH 213 FA CO CM Û O CO Area not flat 0.6 0 .4 Cathode (Diode Collector (Transistor) GEX06260 (O (O (O C\J Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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GEX06260
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