Untitled
Abstract: No abstract text available
Text: 5 /a y h '+ - yiy u JKUT S W -h 5 Schottky Barrier Diode Twin Diode • W I 2 \ f i£ I I ] OUTLINE DIMENSIONS D20SC9M 90V 20A •T jl5 0 ° C • P rrsm 7 7 ^ m •S R S S %DC/DC n y j K — 2 • m m , t f - h s oAggg • I f > 7 ti-^ w *gg RATINGS T c = 25°C
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D20SC9M
J515-5
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Untitled
Abstract: No abstract text available
Text: PDSP16330/A/B HEADQUARTERS OPERATIONS GEC PLESSEY SEMICONDUCTORS Cheney Manor, Swindon, Wiltshire SN2 2QW, United Kingdom. Tel: 0793 518000 Fax: (0793) 518411 GEC PLESSEY SEMICONDUCTORS P.O. Box 660017 1500 Green Hills Road, Scotts Valley, California 95067-0017,
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PDSP16330/A/B
7023s
10MHz
84-pin
PDSP16112
PDSP16116
PDSP16318
PDSP16340
PDSP16350
PDSP16510A
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Legrand transformer
Abstract: legrand 390 61 18 KW motor Legrand* fuses legrand fuse 123 10 bs 3535 diode GG 26 legrand fuse 140 10 aM LEGRAND fuse diode GG 71
Text: control transformers single phase Conform to IEC/EN 61558-2-2; 2-6 24V and 2-4 (>24V) - UL 506 and CSA 22.2 - No. 66 Single-phase 50-60 Hz - class I Insulation voltage between windings : 4 510 V Max. ambient operating temperature : 60°C Protected against accidental contact with live parts up to 1 000 VA
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Legrand transformer
Abstract: Legrand* fuses 18KW motor legrand 390 61 140 10 aM LEGRAND fuse legrand fuse 123 10 legrand bs 3535 115 to 24 2.3 va transformer 18 KW motor
Text: RS Stock-Nos. 422-9738 ff control transformers single phase Conform to IEC/EN 61558-2-2; 2-6 24V and 2-4 (>24V) - UL 506 and CSA 22.2 - No. 66 Single-phase 50-60 Hz - class I Insulation voltage between windings : 4 510 V Max. ambient operating temperature : 60°C
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OC139
Abstract: Low-Power Germanium NPN 2N1694 2N557 2N558 2N147 2N212 2N576 2N634 TR07
Text: LOW-POWER GERMANIUM NPN Item Number Part Number Manufacturer V BR CBO Ie Max (A) hFE (V) fT (Hz) Cobo Max (F) leBO Max (A) V(BR)CEO (V) PD Max (W) Derate at (WrC) Toper Max eC) 2.0m 100 S TO-5 2.5m 100 J 100 J 100 S 100 S 100 J 100 J TO-l TO-5 TO-22var TO-5
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2N445
NKT773
2N292A
2N446
2N558
2N165
2N1288
2N447
2N172
2N148
OC139
Low-Power Germanium NPN
2N1694
2N557
2N147
2N212
2N576
2N634
TR07
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mallory 150m
Abstract: AC127 Low-Power Germanium NPN sk3010 2N366 germanium ac127 ASY28 npn 10 a 50 v germanium AC127-01 germanium
Text: LOW-POWER GERMANIUM NPN Item Number Part Number Manufacturer Y BR CBO hFE (V) Ic Max lA) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CEO (A) (V) PD Max (W) Derate at Toper (WrC) eC) Max Package Style D vic sUnder 1 Watt, (Co nt' d) 5 • 10 2N438A TA167 TA167 TA167
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2N438A
TA167
2N365
ASY28
2N167A
2SC128
mallory 150m
AC127
Low-Power Germanium NPN
sk3010
2N366
germanium ac127
npn 10 a 50 v germanium
AC127-01
germanium
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AF306
Abstract: 2n2654 AF178 Low-Power Germanium PNP AF186 2N3283 2N2672 2N77 GG10M 2N2929
Text: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 2N1524 2N1426 2N1426 2N1526 2N1527 AF147 AF150 AF148 AF200 2N77 ~~Jg~ 15 20 AF306 2S8188 2N612 2N59 2N60 2N61 2N613 2N1561 ~~~~~~ 25 30 35 40 2N1692 2N1693 2N672 2N673 2N402 2N403 2N700 2N700A 2N3283 2N3284
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2N1524
2N1426
2N1526
2N1527
AF147
AF150
AF148
AF200
AF306
2n2654
AF178
Low-Power Germanium PNP
AF186
2N3283
2N2672
2N77
GG10M
2N2929
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mpc apc
Abstract: CX02066 CX02066B24 CX02066DIEWP CX02066TQ32 CX02066WAFER MAX3869 TQFP32
Text: CX02066 3.3 Volt Laser Driver IC for Applications to 3 Gbps FEATURES The CX02066 is a highly integrated, programmable laser driver intended for SONET/SDH applications with FEC to 3 Gbps. Using differential PECL data and clock inputs, the CX02066 supplies the bias and
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CX02066
CX02066
mpc apc
CX02066B24
CX02066DIEWP
CX02066TQ32
CX02066WAFER
MAX3869
TQFP32
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2U 37 diode
Abstract: M810S KT934B diode 2N4000 2N2196 KT934G KT646A 2N6390 2N2197 semelab 2N2197
Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 >= 50 BSX46•6 MH8106 MS106 MS106 BCX55-6 TN2017 2N2017 BC141B ~g~~t~g 55 60 65 70 2N2197 BD415 2N6551 BC141C BSX46·16 BCX55·16 2SD1615 2SD1615 2S01615A 2SD1615A BD320 SD1527·8 BFR22
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220AB
205AD
2N4923
2N4000
MM3020
2SD221F
BCX56
DTL1653
2U 37 diode
M810S
KT934B
diode 2N4000
2N2196
KT934G
KT646A
2N6390
2N2197 semelab
2N2197
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2N3633
Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025
Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M
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2n4889
Abstract: 2N4858 TEXAS 2N4418 2sa777 2n4891 2N4917 2SA8150 6ae diode 2N4417 2N6556
Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M
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STi20
Abstract: SK3537
Text: POWER SILICON NPN Ie Item Number Part Number I C 5 10 15 20 >= 40346V2 40346V2 40346V2 DTL1657 2N3583 SPT3440 MPSU04 MPSU04 DTL1638 2N6721 DTl1648 TRS4926 TRS4926 TRS4926 STI2006 MST20B MST20B STI20 STI205 TRS2006 ~~kJgg8 25 30 2N5662 SK3537 2N6722 2N6722
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237var
220AB
37var
2N6723
2N6771
BUW40
STi20
SK3537
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Untitled
Abstract: No abstract text available
Text: Final Electrical Specifications r r u n LTC1473 Dual PowerPath Switch Driver m TECHNOLOGY February 1997 FCRTURCS DCSCRIPTIOn • Power Path Management for Systems with Multiple DC Sources ■ All N-Channel Switching to Reduce Power Losses and System Cost
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LTC1473
16-Pin
LTC1473
LT1510
LT1511
LTC1538-AUX
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PT8809
Abstract: trw rf 2SC1964 BUX51 dts411 KT921A 2U 37 diode BUX49 KT936A 40340
Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 30 NA71U NA71W KT921 A KT921B 2N5785 2N5784 BUX49 BUX49 NthAmerSemi SemiconTech SemiconTech SemiconTech SemiconTech SemiconTech SemiconTech Hitachi Ltd Hitachi Ltd Hitachi Ltd Semelab NthAmerSemi Matsushita
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SPC411
STS411
PTC403
PTC403P
PTC409
PTC409P
PTC402
PTC402P
SPC402
PTC423
PT8809
trw rf
2SC1964
BUX51
dts411
KT921A
2U 37 diode
BUX49
KT936A
40340
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LTC1161
Abstract: LS105
Text: Final Electrical Specifications u f m TECHNOLOGY LTC1473L Dual Low Voltage PowerPath Switch Driver February 1999 FCRTURCS DCSCRIPTIOn • Switches and Isolates Sources from 3.3V to 10V ■ Power Path Management for Systems with Multiple DC Sources ■ All N-Channel Switching to Reduce Power Losses
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16-Pin
LTC1473L
1473L
1473N
LTC1161
LS105
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diode GG 79
Abstract: HSCH-5511 HSCH5530 HSCH-5531 HSCH5510
Text: Harmonic Mixing with the HSCH-5500 Series Dual Diode Application Note 991 Introduction The Antiparallel Pair The difficulty of generating local oscillator power at higher frequencies has stimulated interest in conversion with subharmonic local oscillators for nearly
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HSCH-5500
5953-4492E
diode GG 79
HSCH-5511
HSCH5530
HSCH-5531
HSCH5510
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Diode SE-05
Abstract: No abstract text available
Text: Harmonic Mixing with the HSCH-5500 Series Dual Diode Application Note 991 Introduction The difficulty of generating local oscillator power at higher frequencies has stimulated interest in conversion with subharmonic local oscillators for nearly forty years [1]. Earlier designs were
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HSCH-5500
5953-4492E
Diode SE-05
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HSCH5530
Abstract: HSCH5511 HSCH-5531 HSCH-5511
Text: Harmonic Mixing with the HSCH-5500 Series Dual Diode Application Note 991 Introduction The difficulty of generating local oscillator power at higher frequencies has stimulated interest in conversion with subharmonic local oscillators for nearly forty years [1]. Earlier designs were
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HSCH-5500
5953-4492E
HSCH5530
HSCH5511
HSCH-5531
HSCH-5511
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S14936DY
Abstract: No abstract text available
Text: Q IM O TD ^L [ F & E ^ S I Final Electrical Specifications u m TECHNOLOGY LTC1479 PowerPath C ontroller for Dual Battery Systems D ecem ber 1996 f€ATUA€S DCSCRIPTIOH • Complete Power Path Management for Two Batteries, DC Power Source, Charger and Backup
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LTC1479
LTC1479
LT1511
LTC1538-AUX
LT1620
LTC1435
LT1621
001447S
S14936DY
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PDF
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10 35 DIODE
Abstract: BFT19B diode 15 35
Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 2N5282 STIP30 STIP305 TRSP3743 2N5345 MJE5730 MJE5730 MJE5730 g~~~~ 25 30 BST16 MJ5416 MJ5416 MM5416 MM5416 MM5416 ST5416 2N5416 +RSP5~~6 35 40 TRSP3006 TRSP30X TRSP30X TRSP30X5 TRSP30X5 TRLP3504 TRLP3504
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37var
220AB
10 35 DIODE
BFT19B
diode 15 35
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C312 diode
Abstract: 2SC3238A BLY87A 2SC2983Y BLW80 2SC731 BSS42 2SD1220Y acrian acrian inc
Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 40665 2N5215 C2-8Z C3-12 2SC1947 2SC1965 2N5080 BFY99 ~~~~~69 25 30 2SC731 2SC731 BlY53A 2SC1966 BLX93A BLX68 BLX68 BlW80 ~~~~~7 35 40 MH8112 MH8113 2SD439 2SD1681 2SC2690 2SC2690A PT9732 2SC3292
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TN3440
2N3961
2N4012
2N5645
2N5079
MRF5175
2N5215
C3-12
2SC1947
2SC1965
C312 diode
2SC3238A
BLY87A
2SC2983Y
BLW80
2SC731
BSS42
2SD1220Y
acrian
acrian inc
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MRF212
Abstract: b0507 MRF221 motorola diode b0106A B12 nec diode 2sc94 2n5861 2N4127 MRF603
Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2SC92 2SC94 2N5590 2S01614 2S01614 TN3252 BlY21 2N5861 ~~g~~~~ 25 30 ZTX649 B0505 B0505 B0505 B0505•1 B0505·1 B0505·5 B0507 ~g~g~ 35 40 B0507-1 B0507·5 B0509 B0509 B0509 B0509-1 B0509-5 2N5413
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OT-161
92var
StR-10
OT-123var
O-220
MRF212
b0507
MRF221
motorola diode
b0106A
B12 nec diode
2sc94
2n5861
2N4127
MRF603
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D1192
Abstract: 2SC3593 BOT93 diode GG 71 RCA1C07 acrian inc diode 2U 66
Text: POWER SILICON NPN Ie Item Number Part Number I C 5 10 15 20 25 30 40 2S0369Y SOT701S SOT701S SOT701S 2N3920 2N50S4 2SC3255R 2SC3593 2SC3255S Solitron PPC Product PPC Product Sid St Dvcs See Index See Index See Index Mallory Indust Mexi See Index :sanyo Elect
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OT7A02
OT7B01
OT7602
2N3919
2N3715
PTC116
2S03690
2N5622
D1192
2SC3593
BOT93
diode GG 71
RCA1C07
acrian inc
diode 2U 66
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B0679
Abstract: 2N6852 SOM3305 solitron transistors U2T101 2N685 DIODE 6AA BSS52 B0879
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) fT hFE Min Max (Hz) ICBO Max (A) t, Max (8) tf Max (8) TOper Max (OC) Package Style NPN Darlington Transistors, (Co nt' d) 5 10 MMST•A28 MPS·A28 MPS·A28 BST52
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BST52
BSP52
MPSA28
2S01698
2S01697
2S01699
BC879
B0679
2N6852
SOM3305
solitron transistors
U2T101
2N685
DIODE 6AA
BSS52
B0879
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