Untitled
Abstract: No abstract text available
Text: SKM 400GB126D . .0 2 GH I8? * 5 + %41(/:-+( +;(0-=-(D Absolute Maximum Ratings Symbol Conditions IGBT 789, .J 2 GH I8 B8 .J 2 LHM I8 LGMM 7 NOM C .03+( 2 PM I8 QQM C @MM C U GM 7 LM Y+ .03+( 2 GH I8 NMM C .03+( 2 PM I8 GOM C @MM C .J 2 LHM I8 GGMM C .03+( 2 GH I8
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400GB126D
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IC 7413
Abstract: mosfet k 2038 8050 sot-23 9435 sot XC6217B SSOT-24 XC6217 MARKING e1 SOT235
Text: ◆Regulators with Green Operation GO Function ◆Output Voltage Range: 0.8V ~ 4.0V ◆Output Current: 200mA <Up to 250mA (TYP.)> ◆Low ESR Capacitor Compatible ◆High Ripple Rejection, Low Output Noise ◆CL High-Speed Auto-Discharge (XC6217B/D) ◆Ultra Small Package: USP-4D
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200mA
250mA
XC6217B/D)
XC6217
IC 7413
mosfet k 2038
8050 sot-23
9435 sot
XC6217B
SSOT-24
MARKING e1 SOT235
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1N60C
Abstract: FAIRCHILD FQD DPAK DPAK-2 PACKAGE PSPICE Orcad 1n60 FQD1N60CTM
Text: FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQD1N60C
FQU1N60C
O-252
FQD1N60CTF
FQD1N60CTM
1N60C
FAIRCHILD FQD DPAK
DPAK-2 PACKAGE
PSPICE Orcad
1n60
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Untitled
Abstract: No abstract text available
Text: FYPF0545S FYPF0545S Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection Applications • Switched mode power supply • Freewheeling diodes TO-220F 1 2 1. Cathode 2. Anode SCHOTTKY BARRIER RECTIFIER
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FYPF0545S
O-220F
FYPF0545S
FYPF0545STU
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IRFP RE 40
Abstract: irfp254b
Text: IRFP254B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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IRFP254B
IRFP254B
FP001
IRFP RE 40
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FQE10N20CTU
Abstract: No abstract text available
Text: FQE10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQE10N20C
FQE10N20C
FQE10N20CTU
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FQPF5N50CF
Abstract: DATE CODE FAIRCHILD
Text: TM FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS on = 1.55 Ω @VGS = 10 V • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC)
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FQPF5N50CF
FQPF5N50CF
FQPF5N50CFTU
DATE CODE FAIRCHILD
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45N20B
Abstract: 45N20
Text: SSH45N20B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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SSH45N20B
45N20B
SSH45N20B
FP001
45N20B
45N20
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IRF 450 MOSFET
Abstract: No abstract text available
Text: IRFW654B / IRFI654B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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IRFW654B
IRFI654B
O-263
W654B
IRFW654BTM
FP001
IRF 450 MOSFET
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Untitled
Abstract: No abstract text available
Text: IRFS240B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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IRFS240B
IRFS240B
FP001
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Untitled
Abstract: No abstract text available
Text: IRFS650B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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IRFS650B
O-220F
IRFS650B
FP001
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irfs250a
Abstract: No abstract text available
Text: IRFS250B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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IRFS250B
IRFS250B
FP001
irfs250a
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Untitled
Abstract: No abstract text available
Text: IRFM210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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IRFM210B
IRFM210B
OT-223-3
IRFM210BTF
FP001
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Untitled
Abstract: No abstract text available
Text: IRFM220B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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IRFM220B
OT-223
IRFM220B
IRFM220BTF
FP001
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SE MIC ONDU CT OR INC □ ¥ K S54H C TLS Q A C /Q A d K S 74H C TLS O H O /O H O Preliminary Specifications FEATURE • 3-state buffer-type outputs drive bus-IInes directly • Bus-structured pinout • Provides extra bus driving latches' necessary for
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4-14E
KS74HCTLS:
KS54HCTLS
14-Pin
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c534 diode
Abstract: No abstract text available
Text: HD74HC374 HD74HC534 • Octal D-type Flip-Flops with 3-state outputs • Octal D-type Flip-Flops (with inverted 3-state o u tp u ts ) These devices are positive edge triggered flip-flops. The difference between HD74HC374 and HD74HC534 is only that the former is a true outputs and the latter is a false outputs.
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HD74HC374
HD74HC534
HD74HC534
c534 diode
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Wamco
Abstract: KW-105G-H KW-ML3-215S KW-105G-AL-DIP KW-104S-EW KW-515 KW-105AL KW-105G-DIP KW-115G-DIP KW-205S-DP
Text: WAMCO INC HE D | =jS04SLl 00 0 04 S S 1 | 7^4 -33 T ' H I - Z i / ' H I ' 3 $ Specifications Part No. Description Volt age (V Current Per Segment (mA) Character (in) Package Dimensions (in) Average Bright ness (Ft/L) Millicandela (MCD) Height Width H
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00G0455
KW-100
KW-104S
KW-104S-NS
KW-104S-EW
KW-104S-LR
KW-104S-XY
KW-104S-PM
KW-ML-2-210S
KW-ML-2-214S
Wamco
KW-105G-H
KW-ML3-215S
KW-105G-AL-DIP
KW-515
KW-105AL
KW-105G-DIP
KW-115G-DIP
KW-205S-DP
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TC74HC40105A
Abstract: No abstract text available
Text: TOSHIBA TC74HC40105AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC40105AP, TC74HC40105AF 4 Bit X 16 Word FIFO REGISTER The TC74HC40105A is a high speed CMOS 4bitXl6word first - in, first - out FIFO Strage Register fabricated with
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TC74HC40105AP/AF
TC74HC40105AP,
TC74HC40105AF
TC74HC40105A
16PIN
DIP16-P-300-2
16PIN
200mil
OP16-P-300-1
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Untitled
Abstract: No abstract text available
Text: HD74BC574A-Octal D Type Flip Flops With 3 State Outputs The HD74BC574A provides high drivability and operation equal to or better than high speed bipolar standard logic IC by using Bi-CM OS process. The device features low power dissipation that is
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HD74BC574A--------Octal
HD74BC574A
HD74BC574A
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KAD7001
Abstract: KAD7001CQ zenamic 220 KAD7001Q KAD700 SDP23 21P16 SDP11 P1822
Text: KAD7001 3 3/4-DIGIT 3260-COUNT A/D CONVERTER 3 3/4-DIGIT 3260-COUNT A/D CONVERTER The KAD7001 is a low power CMOS dual-slope A/D con verter with 3 3/4-digit numeric and 33-segment bar-graph LCD display driver, auto-ranging, and single 3V battery operation.
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KAD7001
3260-COUNT
KAD7001
33-segment
1N4148
KAD7001CQ
zenamic 220
KAD7001Q
KAD700
SDP23
21P16
SDP11
P1822
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Untitled
Abstract: No abstract text available
Text: ROHM CO LTD •4DE 7 ô 2 f l cH cl D DGGSSTB T •RH M 2SB1286 h "7 > y X $ / I ransistors - 7 ^ 3 3 - 3 1 2SB12. pnp Epitaxial Planar PNP Silicon Darlington Transistor # —U> h hFE t f ’r a t ' o 2 K rtM o
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2SB1286
2SB12.
2SD1646
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Untitled
Abstract: No abstract text available
Text: HD74BC373A-Octal D Type Transparent Latches With 3 State Outputs H ie HD74BC373A provides high drivability and operation equal to or better than high speed bipolar standard logic IC by using B i-C M O S process. The device features low power dissipation that is
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HD74BC373A---------------Octal
HD74BC373A
HD74BC373A
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Untitled
Abstract: No abstract text available
Text: HD74BC563A-Octal D Type Transparent Latches With 3 State Outputs H D 74B C 563A provides high drivability and operation equal to or better than high speed bipolar standard logic IC by using Bi-CM O S process. The device features low power dissipation that is
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HD74BC563A---------------Octal
HD74BC563A
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Untitled
Abstract: No abstract text available
Text: HD74HC374 HD74HC534 • Octal D-type Flip-Flops with 3-state outputs • Octal D-type Flip-Flops (with inverted 3 - state o u tp u ts) These devices are positive edge triggered flip -flo p s. The d if ference between HD74HC374 and HD74HC534 is on ly that
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HD74HC374
HD74HC534
HD74HC534
HD74HC374
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