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    DIODE GP 429 Search Results

    DIODE GP 429 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE GP 429 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IN3492

    Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
    Text: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90


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    3E120 450E120R 450F05 450F05R 450F10 450F10R 450F20 450F20R 450F30 450F30R IN3492 sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications l l HEXFET Power MOSFET High frequency DC-DC converters Lead-Free VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including


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    4927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF AN1001) O-220AB O-220 O-262 IRFB41N15D PDF

    diode gp 429

    Abstract: diode gp 421 a6t diode diode gp 634 marking aag AN1001 AN-994 IRFB41N15D gp 001 diode IRFS41N15D
    Text: PD - 94927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications l l HEXFET Power MOSFET High frequency DC-DC converters Lead-Free VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including


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    4927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF AN1001) O-220AB O-220 O-262 IRFB41N15D diode gp 429 diode gp 421 a6t diode diode gp 634 marking aag AN1001 AN-994 gp 001 diode IRFS41N15D PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications l l HEXFET Power MOSFET High frequency DC-DC converters Lead-Free VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including


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    4927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF AN1001) O-220AB O-220 O-262 IRFB41N15D PDF

    IRF AN1001

    Abstract: IRF6218S AN1001 IRF6218L IRF6218S-l
    Text: PD - 95863A IRF6218S IRF6218L SMPS MOSFET HEXFET Power MOSFET Applications l VDSS Reset Switch for Active Clamp Reset DC-DC converters RDS on max -150V 150m:@VGS = -10V ID -27A Benefits l l l Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including


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    5863A IRF6218S IRF6218L -150V AN1001) O-262 AN-994. IRF AN1001 IRF6218S AN1001 IRF6218L IRF6218S-l PDF

    AN1001

    Abstract: IRF6218L IRF6218S
    Text: PD - 95863 IRF6218S IRF6218L SMPS MOSFET HEXFET Power MOSFET Applications l Reset Switch for Active Clamp Reset DC-DC converters VDSS RDS on max -150V 150m:@VGS = -10V ID -27A Benefits l l l Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including


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    IRF6218S IRF6218L -150V AN1001) O-262 -520A/ AN-994. AN1001 IRF6218L IRF6218S PDF

    IRFS52N15D

    Abstract: No abstract text available
    Text: PD - 94815 IRFB52N15DPbF IRFS52N15D IRFSL52N15D SMPS MOSFET Applications l l High frequency DC-DC converters Lead-Free only the TO-220AB version is currently available in a lead-free configuration Benefits Low Gate-to-Drain Charge to Reduce Switching Losses


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    IRFB52N15DPbF IRFS52N15D IRFSL52N15D O-220AB AN1001) IRFS52N15D O-262 PDF

    AN1001

    Abstract: AN-994 IRFS52N15D IRFSL52N15D
    Text: PD - 94815 IRFB52N15DPbF IRFS52N15D IRFSL52N15D SMPS MOSFET Applications l l High frequency DC-DC converters Lead-Free only the TO-220AB version is currently available in a lead-free configuration Benefits Low Gate-to-Drain Charge to Reduce Switching Losses


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    IRFB52N15DPbF IRFS52N15D IRFSL52N15D O-220AB AN1001) O-220AB IRFB52N15DPbF O-262 AN1001 AN-994 IRFS52N15D IRFSL52N15D PDF

    IRF3710S

    Abstract: IRF3710L IRF 450 MOSFET AN-994 IRF3710
    Text: PD - 94201A IRF3710S IRF3710L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A S Description


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    4201A IRF3710S IRF3710L EIA-418. IRF3710S IRF3710L IRF 450 MOSFET AN-994 IRF3710 PDF

    IRL3713S

    Abstract: No abstract text available
    Text: PD - 97011A IRL3713PbF IRL3713SPbF IRL3713LPbF SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested l Lead-Free


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    7011A IRL3713PbF IRL3713SPbF IRL3713LPbF O-220AB IRL3713PbF IRL3713SPbF O-262 O-220A IRL3713S PDF

    AN-994

    Abstract: IRFZ46N IRFZ46NL IRFZ46NS to262 pcb footprint
    Text: PD - 91305C Advanced Process Technology l Surface Mount IRFZ46NS l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ46NS IRFZ46NL HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.0165Ω


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    91305C IRFZ46NS) IRFZ46NL) IRFZ46NS IRFZ46NL EIA-418. AN-994 IRFZ46N IRFZ46NL IRFZ46NS to262 pcb footprint PDF

    ak 957 1542 d

    Abstract: AN-994 IRL530N IRL530NL IRL530NS
    Text: PD - 91349C IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS =100V RDS(on) = 0.10Ω G11


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    91349C IRL530NS/L IRL530NS) IRL530NL) die22 EIA-418. ak 957 1542 d AN-994 IRL530N IRL530NL IRL530NS PDF

    ak 957 1542 d

    Abstract: AN-994 IRL530N IRL530NL IRL530NS IRL530NSL
    Text: PD - 91349C IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS =100V RDS(on) = 0.10Ω G11


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    91349C IRL530NS/L IRL530NS) IRL530NL) EIA-418. ak 957 1542 d AN-994 IRL530N IRL530NL IRL530NS IRL530NSL PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    AN-994

    Abstract: C-150 IRGB30B60K IRGS30B60K IRGSL30B60K
    Text: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


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    4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 O-220AB AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K PDF

    3707S

    Abstract: "current regulator" IRF3707PBF 4.5v to 100v input regulator
    Text: PD - 94813 IRF3707PbF IRF3707S IRF3707L SMPS MOSFET Applications High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l Lead-Free only the TO-220AB version is


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    O-220AB IRF3707PbF IRF3707S IRF3707L O-262 EIA-418. 3707S "current regulator" 4.5v to 100v input regulator PDF

    3704s

    Abstract: IRF3704L 4.5V TO 100V INPUT REGULATOR
    Text: PD - 94814 IRF3704PbF IRF3704S IRF3704L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l Lead-Free only the TO-220AB version is


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    O-220AB IRF3704PbF IRF3704S IRF3704L IRF3704S IRF3704PbF O-262 EIA-418. 3704s IRF3704L 4.5V TO 100V INPUT REGULATOR PDF

    IRF3707ZCL

    Abstract: IRF3707ZCS
    Text: PD - 94784B IRF3707ZCS IRF3707ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS RDS on max 9.5m: 30V Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage


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    94784B IRF3707ZCS IRF3707ZCL O-262 IRF3707ZCL IRF3707ZCS PDF

    IRF3707ZCL

    Abstract: IRF3707ZCS
    Text: PD - 94784B IRF3707ZCS IRF3707ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS RDS on max 9.5m: 30V Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage


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    94784B IRF3707ZCS IRF3707ZCL O-262 AN-994. IRF3707ZCL IRF3707ZCS PDF

    95836

    Abstract: AN-994 IRF3709ZCL IRF3709ZCS 9583 IRF370 14ab
    Text: PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS RDS on max 6.3m: 30V Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage


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    IRF3709ZCS IRF3709ZCL O-262 95836 AN-994 IRF3709ZCL IRF3709ZCS 9583 IRF370 14ab PDF

    95836

    Abstract: 14AB AN-994 IRF3709ZCL IRF3709ZCS
    Text: PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS RDS on max 6.3m: 30V Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage


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    IRF3709ZCS IRF3709ZCL O-262 95836 14AB AN-994 IRF3709ZCL IRF3709ZCS PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


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    4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 AN-994. PDF