Untitled
Abstract: No abstract text available
Text: Part: ICTE-18 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00 Standoff Polarity
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ICTE-18
10x160Â
10x1000
10x1000Â
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18c zener diode
Abstract: ZENER 18C 2480 zener
Text: Part: ICTE-18C Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00
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ICTE-18C
10x160Â
10x1000
10x1000Â
18c zener diode
ZENER 18C
2480 zener
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diode 9146
Abstract: diode icte 36 diode icte 18 MPTE-45 MPTE-45C ICTE
Text: Silicon Avalanche Diodes 1500 Watt Axial Leaded Transient Voltage Suppressors ICTE/MPTE Series The ICTE/MPTE series 1500 W transient suppressors are designed specifically for protection of CMOS, NMOS, BiMOS, and other integrated circuits available today for TTL, DTL, ECL, RTL, and
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ICTE-10/MPTE-10
ICTE-12/MPTE-12
ICTE-15/MPTE-15
ICTE-18/MPTE-18*
ICTE-22/MPTE-22
diode 9146
diode icte 36
diode icte 18
MPTE-45
MPTE-45C
ICTE
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TVS Transient Voltage Suppressors
Abstract: TVS SOD-123 SA5* sot-23 258 sot MMBZ5221ELT1 MM3Z2V4S
Text: Table of Contents Page Page Numeric Data Sheet Listing Numeric Data Sheet Listing . . . . . . . . . . . . . . . . . . . . . . . . . 4 Chapter 3: Case Outlines and Package Dimensions Chapter 1: Selector Guide Case Outlines and Package Dimensions . . . . . . . . . . . . 280
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OT-23
SC-74
SMS05T1
TVS Transient Voltage Suppressors
TVS SOD-123
SA5* sot-23
258 sot
MMBZ5221ELT1
MM3Z2V4S
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IN6277
Abstract: in6275 IN6282 IN6281 diode p6000 j IN6287 In6283 IN6284 in6285 in6276
Text: TRANSIENT VOLTAGE SUPPRESSORS INTRODUCTION TO TRANSIENT VOLTAGE SUPPRESSORS General Semiconductor delivers “state of the art” Transient Voltage Suppressors TVS . Based on controlled avalanche technology, these voltage clamping devices utilize a specific soft solder construction. This physical design enables these
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5KE130
P6KE150
P6KE160
IN6300
5KE160
P6KE170
IN6301
5KE170
P6KE180
IN6302
IN6277
in6275
IN6282
IN6281
diode p6000 j
IN6287
In6283
IN6284
in6285
in6276
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SP05X
Abstract: za sot23 1.5pke 8K10 UltraMOV SMT50 diode P6KE 15KP
Text: Introduction to Circuit Protection Transientology ESD Suppressor Selection Guide Littelfuse manufacturers three different surface mount product families for ESD suppression. Each technology provides distinct attributes for compatibility to specific circuit requirements.
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0-24VDC
SP05X
SP72X
0-30VDC
SP05x,
SP72x,
za sot23
1.5pke
8K10
UltraMOV
SMT50
diode P6KE
15KP
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diode lt 436
Abstract: ZENER DIODE bzy91
Text: Table of Contents Introduction to Circuit Protection 1 Varistor Products 2 Surface Mount Varistors 3 PulseGuard Suppressors 4 TVS Diode Arrays 5 Silicon Avalanche Diodes 6 Zeners/Studs 7 Gas Discharge Tubes 8 Resettable PTCs 9 Surface Mount Fuses 10 Axial Lead and Cartridge Fuses
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20A Diode axial leads
Abstract: avalanche diode diode 1n60 DIODE 1n56 sl1021b
Text: Introduction to Circuit Protection Transientology Overvoltage Suppression Facts and Selection Guide Gas Plasma OVP/GDT Selection Guide Family name OMEGA BETA ALPHA DELTA Performance Level Standard High Ultra High Series Name SL1024B SL1024A SL1011A SL1011B
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SL1024B
SL1024A
SL1011A
SL1011B
SL1021A
SL1021B
SL1002A
SL1003A
SL1122A
SL1221
20A Diode axial leads
avalanche diode
diode 1n60
DIODE 1n56
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orient 817b
Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
Text: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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DL150/D
May-2001
r14525
DLD601
orient 817b
UJT-2N2646
UJT-2N2646 PIN DIAGRAM DETAILS
L 1011 817B
CI 817b
MDA2500
UJT 2N2646
Zener Diode SOT-23 929b
2N2646 pin diagram
diode 913b
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GE Transient Voltage Suppression Manual
Abstract: diode 930 6V8A 2n2646 practical application circuits UJT 2N2646 Transient Voltage Suppression Manual Bidirectional Diode Thyristors 1.5ke 30A Zener Diode SOD323 pdz 4 .7b 919b diode varistor SVC 471 14 melf diode marking code
Text: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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DL150/D
May-2001
no422-3781
r14525
DL150/D
GE Transient Voltage Suppression Manual
diode 930 6V8A
2n2646 practical application circuits
UJT 2N2646
Transient Voltage Suppression Manual
Bidirectional Diode Thyristors 1.5ke 30A
Zener Diode SOD323 pdz 4 .7b
919b diode
varistor SVC 471 14
melf diode marking code
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UJT 2N2646 specification
Abstract: GE Transient Voltage Suppression Manual Triac motor speed control UJT-2N2646 PIN DIAGRAM DETAILS marking dp U1 sot363 UJT pin identification TO-220 MOS UJT 2N2646 DO41 PACKAGE diode marking S6 sine wave UPS inverter circuit diagram
Text: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have
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1N6373
1N6381
ICTE-36,
MPTE-45)
UJT 2N2646 specification
GE Transient Voltage Suppression Manual
Triac motor speed control
UJT-2N2646 PIN DIAGRAM DETAILS
marking dp U1 sot363
UJT pin identification
TO-220 MOS
UJT 2N2646
DO41 PACKAGE diode marking S6
sine wave UPS inverter circuit diagram
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diode icte 36
Abstract: ICTE12 ICTE22 ICTE36C c258 thomson transil diode de puissance
Text: S-THOMSON S IC 59C O T H O M S O N - C S F j C T 02690 E g g . DIVISION SEMICONDUCTEURS. ^ q D 1^ 2^ 537 D — T . QüüatiTG - I l - 2 - 3 | C T E 4 5 ' C ' U N I - A N D BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS DIODES DE PROTECTION U N I - E T BIDIRECTIONNELLES
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kW/8-20
diode icte 36
ICTE12
ICTE22
ICTE36C
c258
thomson transil
diode de puissance
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Untitled
Abstract: No abstract text available
Text: World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: 707 996-5201 . . Fax: (707) 996-3380 TVS Diodes - ICTE Low Clamping Specifications - Electrical Characteristics j 10/1000jjs | 10/1000jjs i Maximum I Maximum | Maximum 10/1000jjs Rated j Minimum j Stand By ! Clamping j Clamping jRated Peak
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10/1000jjs
10/1000jjs
CTE-10
jICTK-12
iICTH-15
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4614 mosfet
Abstract: MOTOROLA 3055V 3055VL
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD3055VL TM O S V P o w er Field E ffe c t T ran sisto r DPAK fo r S u rfa ce M ount TMOS POWER FET 12 AMPERES 60 VOLTS R DS on = 0-18 OHM N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te c h n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce a rea p ro d u ct a bo u t o n e -h a lf th a t of sta n d a rd M O S FE Ts. This
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0E-03
0E-02
0E-01
4614 mosfet
MOTOROLA 3055V
3055VL
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TP10N10E
Abstract: transistor Ip
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP10N10EL Logic Level TM O S E -FE T ™ P o w er Field E ffe c t Tran sistor M otorola P re fe rre d D evice N-Channel Enhancement-Mode Silicon Gate This a d va n ce d TM O S p o w e r F E T is d e sig n e d to w ith sta n d high
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MTP10N10EL
TP10N10E
transistor Ip
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTP6P20E TM O S E-FET™ P o w er Field E ffe c t T ran sisto r M otorola Preferred Device P-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d T M O S E -F E T is d e s ig n e d to w ith s ta n d h ig h
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TP6P20E
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FRO 24N
Abstract: 24n40e 24n40
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S h ee t M TW 24N 40E TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TMOS POWER FET 24 AMPERES 400 VOLTS RDS on = 0.16 OHM N-Channel Enhancement-Mode Silicon Gate
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33N10E
Abstract: TP33N10E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data Sheet MTP33N10E TM O S E -F E T ™ P o w er Field E ffe c t T ran sisto r Motorola Preferred Devlc« N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 33 AMPERES 100 VOLTS T h is a d v a n c e d T M O S E -F E T is d e s ig n e d to w ith s ta n d high
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TY25N60E
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTY25N60E TM O S E -F E T ™ P o w er Field E ffe c t T ran sisto r M o to ro la P re fe rre d D e v ic e N-Channel Enhancement-Mode Silicon Gate This a d va n ce d T M O S p o w e r F E T is d e sig n e d to w ith sta n d high
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0E-05
0E-01
TY25N60E
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20N03
Abstract: 20n03h
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTD20N03HDL HDTM O S E -FE T High D en sity P o w er FET DPAK fo r S u rfa c e M ount M o to ro la P re fe rre d D e v ic e TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS R DS on = 0-035 OHM
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A dvance Information M TD F 1N 02H D Medium Power Surface Mount Products TM O S Dual N -C h an n e l F ield E ffe c t Tran sisto r M o to ro la P re fe rre d D e vice SINGLE TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS R D S on = 0.120 OHM
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14N50E
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTW14N50E TMOS E-FET ™ Power Field Effect Transistor TO -247 with Isolated Mounting Hole M o to ro la P re fe rre d D e v ic e TM O S PO W ER FET 14 A M P E R E S 5 0 0 VO LTS N-Channel Enhancement-Mode Silicon Gate
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14N50E
14N50E
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20N20E
Abstract: B20N20E motorola 20n mosfet 20n
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s Data Sheet MTB20N20E TM O S E -F E T ™ High Energy P o w er FET D2PAK fo r S u rfa c e M ount M otorola Preferred Device TM O S POW ER FET N-Channel Enhancement-Mode Silicon Gate V The D ^P A K p a cka g e has th e c a p a b ility of h ou sin g a larg e r die
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0E-05
20N20E
B20N20E
motorola 20n
mosfet 20n
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3N120E
Abstract: B3N120E MTB3N120E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S h ee t M TB3N 120E TM O S E -FE T ™ High E nergy P o w er FET D2PAK for S u rfa c e M ount M o to ro la P re fe rre d D evice TM O S PO W ER FET N-Channel Enhancement-Mode Silicon Gate
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