Untitled
Abstract: No abstract text available
Text: WT- 206DV06 A Zener Diode Chips for ESD Protection 1. Feature: 1-2 Silicon Zener diode chips for electrostatic discharge (ESD) protection application. 2. Structure: 2-1 Planar type: Silicon Diode 2-2 Electrodes: Top side:Aluminum Alloy. Back side:Gold Layer.
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206DV06
98mils
98mils
12mils
12mils
09-Jun-10
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Untitled
Abstract: No abstract text available
Text: WT-208DV06 M Zener Diode Chips for ESD Protection 1. Feature: 1-1. This Specification Applies to N/P/N Silicon Zener Double Diode Chips. Device NO:WT-208DV06(M) 2. Structure: 2-1. Planar type . 2-2. Electrodes : Top side : Aluminum Alloy. Back side : Gold Layer
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WT-208DV06
16-Aug-2013
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJQ6003DPM 600V - 20A - IGBT and Diode High Speed Power Switching R07DS0846EJ0100 Rev.1.00 Aug 03, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package
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RJQ6003DPM
R07DS0846EJ0100
PRSS0005ZB-A
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Zener led
Abstract: diode zener protection DIODE ZENER DUAL Double Zener diode WT-Z224V-AU4 back diode
Text: WT-Z224V-AU4 Zener Diode Chips Dual Pad for ESD Bidrectional Protection 1. Feature: 1-1 This specification applies to N/P/N silicon zener double diodes chips, Device NO. WT-Z224V-AU4 2. Structure: 2-1. Planar type : N/P/N Diode. 2-2. Electrodes : Top side : Gold pad.
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WT-Z224V-AU4
23mil
MIL-STD883
08-Mar-07
Zener led
diode zener protection
DIODE ZENER DUAL
Double Zener diode
WT-Z224V-AU4
back diode
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10ghz optical modulator driver
Abstract: 10Gb/s laser driver FTM1141GF STM-64 10 gb laser diode thermistor 503
Text: Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF FEATURES • Driver integrated 10Gb/s MI-DFB module for 800ps/nm optical transmission • MI-DFB-LD Modulator Integrated DFB Laser Diode is included • Modulator driver IC is included • Built-in optical isolator, PIN-Photo diode for monitor, thermistor
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10Gb/s
FTM1141GF
10Gb/s
800ps/nm
FTM1141GF
a4888
10ghz optical modulator driver
10Gb/s laser driver
STM-64
10 gb laser diode
thermistor 503
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10 gb laser diode
Abstract: 10ghz optical modulator driver
Text: Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF FEATURES • Driver integrated 10Gb/s MI-DFB module for 800ps/nm optical transmission • MI-DFB-LD Modulator Integrated DFB Laser Diode is included • Modulator driver IC is included • Built-in optical isolator, PIN-Photo diode for monitor, thermistor
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10Gb/s
FTM1141GF
10Gb/s
800ps/nm
FTM1141GF
FCSI0103M200
10 gb laser diode
10ghz optical modulator driver
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Untitled
Abstract: No abstract text available
Text: WT-224DV06 Zener Diode Chips for ESD Bidrectional Protection 1. Feature: 1-1 chips, Device NO. WT-224DV06 2. Structure: 3. Size: 2-1. Planar type : N/P/N Diode. 2-2. Electrodes : Top side : Aluminum Alloy. Back side : Gold Layer. 3-1. Chip size : 24 mils x 24 mils 600 m x 600 μm .
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WT-224DV06
MIL-STD883
23-Dec-09
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RJH60A83RDPE-00
Abstract: No abstract text available
Text: Preliminary Datasheet RJH60A83RDPE 600V - 10A - IGBT Application: Inverter R07DS0806EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode Short circuit withstand time 5 s typ. Low collector to emitter saturation voltage
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RJH60A83RDPE
R07DS0806EJ0200
PRSS0004AE-B
RJH60A83RDPE-00
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RJH60A83RDPE-00
Abstract: No abstract text available
Text: Preliminary Datasheet RJH60A83RDPE 600V - 10A - IGBT Application: Inverter R07DS0806EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode Short circuit withstand time 5 s typ. Low collector to emitter saturation voltage
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RJH60A83RDPE
R07DS0806EJ0200
PRSS0004AE-B
RJH60A83RDPE-00
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH60A85RDPE 600V - 15A - IGBT Application: Inverter R07DS0809EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode Short circuit withstand time 5 s typ. Low collector to emitter saturation voltage
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RJH60A85RDPE
R07DS0809EJ0200
PRSS0004AE-B
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NLK1C
Abstract: Peltier NLK1C6DAAA Nel butterfly sms 1550
Text: NEL Laser Diodes April2005 NLK1C6DAAA Narrow linewidth DFB laser diode in a butterfly -type 14 pin package with thermo-electric cooler and 55 dB isolator. Polarization maintaining dispersion-shifted fiber pigtail is FEATURES * Wavelength Range * Spectral Linewidth
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April2005
100kHz
25deg
NLK1C
Peltier
NLK1C6DAAA
Nel butterfly
sms 1550
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH60A85RDPE 600V - 15A - IGBT Application: Inverter R07DS0809EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode Short circuit withstand time 5 s typ. Low collector to emitter saturation voltage
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RJH60A85RDPE
R07DS0809EJ0200
PRSS0004AE-B
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH60A01RDPD-A0 600V - 5A - IGBT Application: Inverter R07DS1091EJ0100 Rev.1.00 Jul 04, 2013 Features • Reverse conducting IGBT with monolithic diode • Short circuit withstand time 5 s typ. • Low collector to emitter saturation voltage
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RJH60A01RDPD-A0
R07DS1091EJ0100
PRSS0004ZK-A
O-252A)
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NLK1C
Abstract: thermoelectric peltier
Text: NEL Laser Diodes July 2005 NLK1C6BAAA Narrow linewidth DFB laser diode in a butterfly -type 14 pin package with thermo-electric cooler and 55 dB isolator. Polarization maintaining dispersion-shifted fiber pigtail is FEATURES * Wavelength Range * Spectral Linewidth
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500kHz
25deg
NLK1C
thermoelectric peltier
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH60A81RDPD-E0 600V - 5A - IGBT Application: Inverter R07DS0804EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode Short circuit withstand time 5 s typ. Low collector to emitter saturation voltage
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RJH60A81RDPD-E0
R07DS0804EJ0200
PRSS0004ZJ-A
O-252)
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RJH60A83RDPP-M0
Abstract: No abstract text available
Text: Preliminary Datasheet RJH60A83RDPP-M0 600V - 10A - IGBT Application: Inverter R07DS0808EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode Short circuit withstand time 5 s typ. Low collector to emitter saturation voltage
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RJH60A83RDPP-M0
R07DS0808EJ0200
PRSS0003AF-A
O-220FL)
RJH60A83RDPP-M0
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH60A81RDPD-E0 600V - 5A - IGBT Application: Inverter R07DS0804EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode Short circuit withstand time 5 s typ. Low collector to emitter saturation voltage
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RJH60A81RDPD-E0
R07DS0804EJ0200
PRSS0004ZJ-A
O-252)
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH60A85RDPP-M0 600V - 15A - IGBT Application: Inverter R07DS0811EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode Short circuit withstand time 5 s typ. Low collector to emitter saturation voltage
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RJH60A85RDPP-M0
R07DS0811EJ0200
PRSS0003AF-A
O-220FL)
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH60A83RDPP-M0 600V - 10A - IGBT Application: Inverter R07DS0808EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode Short circuit withstand time 5 s typ. Low collector to emitter saturation voltage
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RJH60A83RDPP-M0
R07DS0808EJ0200
PRSS0003AF-A
O-220FL)
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH60A83RDPD-E0 600V - 10A - IGBT Application: Inverter R07DS0805EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode Short circuit withstand time 5 s typ. Low collector to emitter saturation voltage
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RJH60A83RDPD-E0
R07DS0805EJ0200
PRSS0004ZJ-A
O-252)
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH60A85RDPP-M0 600V - 15A - IGBT Application: Inverter R07DS0811EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode Short circuit withstand time 5 s typ. Low collector to emitter saturation voltage
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RJH60A85RDPP-M0
R07DS0811EJ0200
PRSS0003AF-A
O-220FL)
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH60A83RDPD-A0 600V - 10A - IGBT Application: Inverter R07DS1093EJ0100 Rev.1.00 Jul 04, 2013 Features • Reverse conducting IGBT with monolithic diode • Short circuit withstand time 5 s typ. • Low collector to emitter saturation voltage
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RJH60A83RDPD-A0
R07DS1093EJ0100
PRSS0004ZK-A
O-252A)
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11DF2
Abstract: 11DF1
Text: FAST RECOVERY DIODE l.lA / 1 0 0 ~ 2 0 0 V / tr r : 30nsec 1 IDF1 11DF2 FEATURES ° Miniature Size 0 Ultra - Fast Recovery ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability «100 Volts through 400 Volts Types Available
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OCR Scan
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PDF
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30nsec
11DF2
11DF1
11DF2
Ta-56
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MCP3041
Abstract: MCP3040 MOC3040 equivalent MOC30* inductive MCP3031 MOC3031 equivalent MCP3030 ic moc3041 MCP303X MOC3041 replacement
Text: QUALITY TECHNOLOGIES VDE APPROVED ZERO-CROSSING TRIACS ZERO-CROSSING PACKAGE DIMENSIONS t 6.86 DESCRIPTION These devices are optically isolated zero-crossing triac drivers. They consist of a Gallium Arsenide infrared emitting diode optically coupled to a photosensitive
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OCR Scan
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MCP3030*
MCP3040/0Z*
MCP3031
MCP3041/1Z
MCP3032
MCP3042/2Z
E5015133k
500mA
MCP3041
MCP3040
MOC3040 equivalent
MOC30* inductive
MOC3031 equivalent
MCP3030
ic moc3041
MCP303X
MOC3041 replacement
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