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    DIODE IFAVM 30 A Search Results

    DIODE IFAVM 30 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE IFAVM 30 A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXYS DSEI 2

    Abstract: ixys dsei 2x30
    Text: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 600 600 IFAVM = 2x30 A VRRM = 600 V trr = 35 ns Type DSEI 2x 30-06P DSEI 2x 31-06P 2x 30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular; d = 0.5


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    30-06P 31-06P IXYS DSEI 2 ixys dsei 2x30 PDF

    ixys dsei

    Abstract: IRM 1200 80D-5
    Text: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 1200 1200 IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Type DSEI 2x 30-12P DSEI 2x 31-12P 2x30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM


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    30-12P 31-12P ixys dsei IRM 1200 80D-5 PDF

    ixys dsei 2x30

    Abstract: DSEI IXYS 2x31 IXYS DSEI 2 DSEI 20-01 A
    Text: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 1000 1000 IFAVM = 2x30 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 30-10P DSEI 2x 31-10P 2x30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM


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    30-10P 31-10P ixys dsei 2x30 DSEI IXYS 2x31 IXYS DSEI 2 DSEI 20-01 A PDF

    Untitled

    Abstract: No abstract text available
    Text: Fast Recovery Epitaxial Diode FRED VRSM V 1000 VRRM DSEI 30 IFAVM = 30 A VRRM = 1000 V = 35 ns trr C A Type TO-247 AD V 1000 DSEI 30-10A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM


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    O-247 0-10A PDF

    Untitled

    Abstract: No abstract text available
    Text: Fast Recovery Epitaxial Diode FRED DSEI 30 VRSM A V 1200 VRRM Type C IFAVM = 26 A VRRM = 1200 V = 40 ns trr TO-247 AD V 1200 C DSEI 30-12A A C A = Anode, C = Cathode Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5


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    O-247 0-12A PDF

    Untitled

    Abstract: No abstract text available
    Text: Fast Recovery Epitaxial Diode FRED DSEI 30 VRSM A V 1200 VRRM Type C IFAVM = 26 A VRRM = 1200 V trr = 40 ns TO-247 AD V 1200 C DSEI 30-12A A C A = Anode, C = Cathode Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5


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    O-247 0-12A PDF

    ixys dsei 30-06A

    Abstract: DSEI 30-06A 30-06A
    Text: Fast Recovery Epitaxial Diode FRED DSEI 30 VRSM A V 640 VRRM Type C IFAVM = 37 A VRRM = 600 V trr = 35 ns TO-247 AD V 600 C DSEI 30-06A A C A = Anode, C = Cathode Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5


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    O-247 0-06A ixys dsei 30-06A DSEI 30-06A 30-06A PDF

    Untitled

    Abstract: No abstract text available
    Text: Common Cathode Fast Recovery Epitaxial Diode FRED VRSM V 640 VRRM DSEK 30 IFAVM = 2 x 30 A VRRM = 600 V trr = 35 ns TO-247 AD Type V 600 A DSEK 30-06A C A C TAB) Symbol Test Conditions IFRMS IFAVM ¬ IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by T VJM


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    0-06A O-247 PDF

    30-06A

    Abstract: No abstract text available
    Text: Fast Recovery Epitaxial Diode FRED VRSM V 640 VRRM DSEI 30 IFAVM = 37 A VRRM = 600 V = 35 ns trr C A Type TO-247 AD V 600 DSEI 30-06A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM


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    O-247 0-06A 30-06A PDF

    Untitled

    Abstract: No abstract text available
    Text: Fast Recovery Epitaxial Diode FRED VRSM V 1200 VRRM DSEI 30 IFAVM = 26 A VRRM = 1200 V = 40 ns trr C A Type TO-247 AD V 1200 DSEI 30-12A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM


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    O-247 0-12A PDF

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    Abstract: No abstract text available
    Text: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Cathode 8P030AS Cathode (Flange) Anode Symbol Conditions Maximum Ratings IFRMS IFAVM ①


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    8-03AS 8P030AS O-252AA PDF

    DSEI IXYS 2x31-12B

    Abstract: 2x31-12B
    Text: DSEI 2x30-12P IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 Type DSEI 2x 30-12P Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM


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    2x30-12P 30-12P 20070731a DSEI IXYS 2x31-12B 2x31-12B PDF

    2x31-10b

    Abstract: ixys dsei 2x31-10b
    Text: DSEI 2x30-10P IFAVM = 2x30 A VRRM = 1000 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 Type DSEI 2x 30-10P Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM


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    2x30-10P 30-10P 2x31-10P, 2x31-10B 20070731a 2x31-10b ixys dsei 2x31-10b PDF

    Untitled

    Abstract: No abstract text available
    Text: Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 640 600 DSEI 1x 31 IFAVM = 30 A VRRM = 600 V trr = 35 ns miniBLOC, SOT-227 B Type DSEI 1x 31-06C DSEI 1x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5


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    OT-227 31-06C PDF

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    Abstract: No abstract text available
    Text: DSEK 60 Common Cathode Fast Recovery Epitaxial Diode FRED VRSM V 640 VRRM IFAVM = 2x 30 A VRRM = 600 V = 35 ns trr TO-247 AD Type V 600 A DSEK 60-06A C A C A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ①


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    O-247 0-06A PDF

    60-06A

    Abstract: No abstract text available
    Text: DSEK 60 Common Cathode Fast Recovery Epitaxial Diode FRED VRSM V 640 VRRM IFAVM = 2x 30 A VRRM = 600 V trr = 35 ns TO-247 AD Type V 600 A DSEK 60-06A C A C A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ①


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    O-247 0-06A 60-06A PDF

    dsei 31-06c

    Abstract: ixys dsei IXYS DSEI 2X E72873 3104c IXYS DSEI 2 3188 diode
    Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 440 640 400 600 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C DSEI 2x 30 DSEI 2x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ①


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    OT-227 E72873 30-04C 31-04C 30-06C 31-06C dsei 31-06c ixys dsei IXYS DSEI 2X E72873 3104c IXYS DSEI 2 3188 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: DSEI 30-10A Fast RecoveryEpitaxial Diode FRED TO-247 AD VRSM V DSEI 30 IFAVM = 30 A 1000 VRRM = 1000 V = 35 ns Symbol trr l l l l l l International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses


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    0-10A O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 440 640 400 600 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C DSEI 2x 30 DSEI 2x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ①


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    OT-227 E72873 30-04C 31-04C 30-06C 31-06C PDF

    60-03A

    Abstract: No abstract text available
    Text: DSEP 30-03A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 300 V trr = 30 ns with soft recovery VRSM VRRM V V 300 300 Type C A TO-247 AD C DSEP 30-03A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 135°C; rectangular, d = 0.5


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    0-03A O-247 DSEP30-03A/DSEC 60-03A PDF

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    Abstract: No abstract text available
    Text: DSEP 2x 31-03A HiPerFREDTM Epitaxial Diode IFAV = 2x 30 A VRRM = 300 V trr = 30 ns with soft recovery VRSM VRRM V V 300 300 miniBLOC, SOT-227 B Type DSEP 2x 31-03A Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 110°C; rectangular, d = 0.5 IFSM 70 30 A


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    1-03A OT-227 2x31-03A PDF

    Untitled

    Abstract: No abstract text available
    Text: DSEP 30-03A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 300 V = 30 ns trr with soft recovery VRSM VRRM V V 300 300 Type A C TO-247 AD C DSEP 30-03A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 145°C; rectangular, d = 0.5


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    0-03A O-247 DSEP30-03A/DSEC PDF

    Untitled

    Abstract: No abstract text available
    Text: DSEP 30-04A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 400 V = 30 ns trr with soft recovery VRSM VRRM V V 400 400 Type A C TO-247 AD C DSEP 30-04A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 140°C; rectangular, d = 0.5


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    0-04A O-247 0-04A PDF

    E72873

    Abstract: 2x31
    Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 1200 1200 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-12B DSEI 2x 31-12B DSEI 2x 30 DSEI 2x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5


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    OT-227 E72873 30-12B 31-12B E72873 2x31 PDF