BY359X-1500
Abstract: BY359X-1500S BY359 BY359S by359x
Text: Philips Semiconductors Product specification Damper diode fast, high-voltage GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a plastic envelope featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The device is
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OD113
BY359X-1500
BY359X-1500S
OD113;
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BY359X-1500S
BY359
BY359S
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definition RMS forward current
Abstract: BY359X-1500 by359 BY359X diode fast
Text: Philips Semiconductors Product specification Rectifier diode fast, high-voltage GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a full pack plastic envelope featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The
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BY359X-1500
definition RMS forward current
BY359X-1500
by359
BY359X
diode fast
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power 22E
Abstract: CD41 CD411699A powerex pow-r-blok
Text: CD41_99A, CS41_99A CN41_99A, CC41_99A Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING Powerex Dual Diode & Single Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are
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power 22E
Abstract: powerex pow-r-blok AC welder IGBT circuit CD41 CD411699
Text: CD41_99, CS41_99 CN41_99, CC41_99 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING Powerex Dual Diode & Single Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are
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BY329-1500S
Abstract: BY329X-1700S BY329-1500 BY459X-1500 by329x definition RMS forward current
Text: Philips Semiconductors Product specification Damper diode fast, high-voltage GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a full plastic envelope featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The device is
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BY329X-1700S
BY329-1500S
BY329X-1700S
BY329-1500
BY459X-1500
by329x
definition RMS forward current
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BY329X-1500S
Abstract: BY329X-1500 BY329X BY329-1500S BY459X-1500 BY329-1500 by329x equivalent
Text: Philips Semiconductors Product specification Damper diode fast, high-voltage BY329X-1500 BY329X-1500S GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a full plastic envelope featuring low forward voltage drop, fast reverse recovery and soft recovery
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BY329X-1500
BY329X-1500S
BY329X
-1500S
OD113
BY329X-1500S
BY329X-1500
BY329X
BY329-1500S
BY459X-1500
BY329-1500
by329x equivalent
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BY459X-1500
Abstract: BY459 BY459X
Text: Philips Semiconductors Product specification Rectifier diode fast, high-voltage GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a full pack plastic envelope, featuring fast forward recovery and low forward recovery voltage. The device is intended for
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BY459X-1500
BY459X-1500
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DATASHEET TUNNEL DIODE
Abstract: "back diode" DIODE in 5060 ASTD-1020 PIN DIODE tunnel diode specifications diode 1020 package ASTD 2030 tunnel diode Tunnel diode ASTD-1020 ASTD-1020 detector
Text: ASTD SERIES PLANAR TUNNEL BACK DIODE DESCRIPTION: The ASTD Series of Tunnel Diodes are Optimized for Operation as Back Diode Detectors in Applications up to 18 GHz. PACKAGE STYLE 51 FEATURES INCLUDE: • Excellent Temperature Stability • Fast Rise / Fall Times
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Untitled
Abstract: No abstract text available
Text: MSW4T-1004 PIN DIODE SWITCH ELEMENT PIN #13 PIN #8 PIN #16 PIN #5 PIN #2 Plastic Molded 16L 3x3 QFN Package paddle electrical & thermal ground Description Features A SP4T switch in a plastic 16L 3x3 QFN package. Each port is Electrical Series / Shunt Diode and Thermal
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MSW4T-1004
A17141
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Untitled
Abstract: No abstract text available
Text: MSWS4T-1004 PIN DIODE SWITCH ELEMENT PIN #13 PIN #8 PIN #16 PIN #5 PIN #2 Plastic Molded 16L 3x3 QFN Package paddle electrical & thermal ground Description Features A SP4T switch in a plastic 16L 3x3 QFN package. Each port is Electrical Series / Shunt Diode and Thermal
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MSWS4T-1004
A17141
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phototransistor 3 pin
Abstract: FOD817 t-1 ir phototransistor 3 pin phototransistor 4 pin phototransistor dual Phototransistor OPTOCOUPLERs MARKING CODE FOD817A FOD817B FOD817C
Text: 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS FOD817 Series DESCRIPTION The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. FEATURES 4 • Applicable to Pb-free IR reflow soldering
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FOD817:
FOD817A:
FOD817B:
FOD817C:
FOD817D:
phototransistor 3 pin
t-1 ir phototransistor
3 pin phototransistor
4 pin phototransistor
dual Phototransistor
OPTOCOUPLERs MARKING CODE
FOD817A
FOD817B
FOD817C
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T161-160
Abstract: SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100
Text: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing phase control thyristors, rectifier diodes, high frequency thyristors, fast recovery diode and fast switching thyristors along with about 300 components.
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ISO9001
to300
SF15CL
500Aelement
T161-160
SCR T161-160
t153-630
KP25A
T123-250
tc171
ZP50A
T143-630 SCR
KP200A
T151-100
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Untitled
Abstract: No abstract text available
Text: 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS FOD817 Series DESCRIPTION The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. FEATURES 4 • Applicable to Pb-free IR reflow soldering
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FOD817:
FOD817A:
FOD817B:
FOD817C:
FOD817D:
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope with integrated damper diode intended for use in horizontal deflection circuits of colour television
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BU4506DZ
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4507DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
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BU4507DZ
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BU4508DZ
Abstract: BU4508
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4508DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers
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BU4508DZ
BU4508DZ
BU4508
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BU4506DF
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope with integrated damper diode intended for use in horizontal deflection circuits of colour television
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BU4506DZ
BU4506DF
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BU1508DX
Abstract: BU1508D
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
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BU1508DX
BU1508DX
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by359x
Abstract: BY359X-1500
Text: Philips Semiconductors Product specification Rectifier diode BY359X-1500 fast, GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a full pack plastic envelope featuring low forward
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BY359X-1500
BY359X-1500
by359x
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horizontal deflection circuit
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diode fast, high-voltage GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a full pack plastic envelope, featuring fast forward recovery and low forward recovery voltage. The device is intended for
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64kHz.
BY479X-1700
OD113
horizontal deflection circuit
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BY459X-1500
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diode fast, high-voltage GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a full pack plastic envelope, featuring fast forward recovery and low forward recovery voltage. The device is intended for
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-SOD113
BY459X-1500
BY459X-1500
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BU4508DZ
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4508DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers
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BU4508DZ
BU4508DZ
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1506DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
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BU1506DX
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4507DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
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BU4507DZ
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