by359x
Abstract: BY359X-1500
Text: Philips Semiconductors Product specification Rectifier diode BY359X-1500 fast, GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a full pack plastic envelope featuring low forward
|
OCR Scan
|
BY359X-1500
BY359X-1500
by359x
|
PDF
|
BY359X-1500
Abstract: BY359X-1500S BY359 BY359S by359x
Text: Philips Semiconductors Product specification Damper diode fast, high-voltage GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a plastic envelope featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The device is
|
Original
|
OD113
BY359X-1500
BY359X-1500S
OD113;
BY359X-1500
BY359X-1500S
BY359
BY359S
by359x
|
PDF
|
definition RMS forward current
Abstract: BY359X-1500 by359 BY359X diode fast
Text: Philips Semiconductors Product specification Rectifier diode fast, high-voltage GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a full pack plastic envelope featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The
|
Original
|
OD113
BY359X-1500
definition RMS forward current
BY359X-1500
by359
BY359X
diode fast
|
PDF
|
power 22E
Abstract: CD41 CD411699A powerex pow-r-blok
Text: CD41_99A, CS41_99A CN41_99A, CC41_99A Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING Powerex Dual Diode & Single Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are
|
Original
|
|
PDF
|
power 22E
Abstract: powerex pow-r-blok AC welder IGBT circuit CD41 CD411699
Text: CD41_99, CS41_99 CN41_99, CC41_99 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING Powerex Dual Diode & Single Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are
|
Original
|
|
PDF
|
horizontal deflection circuit
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diode fast, high-voltage GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a full pack plastic envelope, featuring fast forward recovery and low forward recovery voltage. The device is intended for
|
OCR Scan
|
64kHz.
BY479X-1700
OD113
horizontal deflection circuit
|
PDF
|
BY329-1500S
Abstract: BY329X-1700S BY329-1500 BY459X-1500 by329x definition RMS forward current
Text: Philips Semiconductors Product specification Damper diode fast, high-voltage GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a full plastic envelope featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The device is
|
Original
|
OD113
BY329X-1700S
BY329-1500S
BY329X-1700S
BY329-1500
BY459X-1500
by329x
definition RMS forward current
|
PDF
|
BY329X-1500S
Abstract: BY329X-1500 BY329X BY329-1500S BY459X-1500 BY329-1500 by329x equivalent
Text: Philips Semiconductors Product specification Damper diode fast, high-voltage BY329X-1500 BY329X-1500S GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a full plastic envelope featuring low forward voltage drop, fast reverse recovery and soft recovery
|
Original
|
BY329X-1500
BY329X-1500S
BY329X
-1500S
OD113
BY329X-1500S
BY329X-1500
BY329X
BY329-1500S
BY459X-1500
BY329-1500
by329x equivalent
|
PDF
|
BY459X-1500
Abstract: BY459 BY459X
Text: Philips Semiconductors Product specification Rectifier diode fast, high-voltage GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a full pack plastic envelope, featuring fast forward recovery and low forward recovery voltage. The device is intended for
|
Original
|
OD113
BY459X-1500
BY459X-1500
BY459
BY459X
|
PDF
|
BY459X-1500
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diode fast, high-voltage GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a full pack plastic envelope, featuring fast forward recovery and low forward recovery voltage. The device is intended for
|
OCR Scan
|
-SOD113
BY459X-1500
BY459X-1500
|
PDF
|
DATASHEET TUNNEL DIODE
Abstract: "back diode" DIODE in 5060 ASTD-1020 PIN DIODE tunnel diode specifications diode 1020 package ASTD 2030 tunnel diode Tunnel diode ASTD-1020 ASTD-1020 detector
Text: ASTD SERIES PLANAR TUNNEL BACK DIODE DESCRIPTION: The ASTD Series of Tunnel Diodes are Optimized for Operation as Back Diode Detectors in Applications up to 18 GHz. PACKAGE STYLE 51 FEATURES INCLUDE: • Excellent Temperature Stability • Fast Rise / Fall Times
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MSW4T-1004 PIN DIODE SWITCH ELEMENT PIN #13 PIN #8 PIN #16 PIN #5 PIN #2 Plastic Molded 16L 3x3 QFN Package paddle electrical & thermal ground Description Features A SP4T switch in a plastic 16L 3x3 QFN package. Each port is Electrical Series / Shunt Diode and Thermal
|
Original
|
MSW4T-1004
A17141
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MSWS4T-1004 PIN DIODE SWITCH ELEMENT PIN #13 PIN #8 PIN #16 PIN #5 PIN #2 Plastic Molded 16L 3x3 QFN Package paddle electrical & thermal ground Description Features A SP4T switch in a plastic 16L 3x3 QFN package. Each port is Electrical Series / Shunt Diode and Thermal
|
Original
|
MSWS4T-1004
A17141
|
PDF
|
phototransistor 3 pin
Abstract: FOD817 t-1 ir phototransistor 3 pin phototransistor 4 pin phototransistor dual Phototransistor OPTOCOUPLERs MARKING CODE FOD817A FOD817B FOD817C
Text: 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS FOD817 Series DESCRIPTION The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. FEATURES 4 • Applicable to Pb-free IR reflow soldering
|
Original
|
FOD817
FOD817:
FOD817A:
FOD817B:
FOD817C:
FOD817D:
phototransistor 3 pin
t-1 ir phototransistor
3 pin phototransistor
4 pin phototransistor
dual Phototransistor
OPTOCOUPLERs MARKING CODE
FOD817A
FOD817B
FOD817C
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS FOD817 Series DESCRIPTION The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. FEATURES 4 • Applicable to Pb-free IR reflow soldering
|
Original
|
FOD817
FOD817:
FOD817A:
FOD817B:
FOD817C:
FOD817D:
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope with integrated damper diode intended for use in horizontal deflection circuits of colour television
|
Original
|
BU4506DZ
|
PDF
|
BU4508DZ
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4508DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers
|
OCR Scan
|
BU4508DZ
BU4508DZ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1506DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
|
OCR Scan
|
BU1506DX
|
PDF
|
BU4508DZ
Abstract: bu4508df BU4508D BU4508 BU4508AZ bu4508dfx
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.
|
Original
|
BU4508DZ
BU4508DZ
bu4508df
BU4508D
BU4508
BU4508AZ
bu4508dfx
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4507DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
|
Original
|
BU4507DZ
|
PDF
|
BU4508DZ
Abstract: BU4508
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4508DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers
|
Original
|
BU4508DZ
BU4508DZ
BU4508
|
PDF
|
BU4506DF
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope with integrated damper diode intended for use in horizontal deflection circuits of colour television
|
Original
|
BU4506DZ
BU4506DF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4507DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
|
OCR Scan
|
BU4507DZ
|
PDF
|
BU1508DX
Abstract: BU1508D
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
|
Original
|
BU1508DX
BU1508DX
BU1508D
|
PDF
|
