SE301A
Abstract: 30mWI
Text: N E C 30E D ELECTRONICS INC • h42752S 005=^44 fi ■ LIGHT EMITTING DIODE SE301A GaAs INFRARED EM ITTING DIODE INDUSTRIAL USE DESCRIPTION The SE301A is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on a TO-18 hermetically sealed header
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h42752S
SE301A
SE301A
940nm,
T-41-11
ta-259c)
AM81ENT
30mWI
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CBRD
Abstract: IEI-1209
Text: DATA SHEET NEC LIGHT EMITTING DIODE SE316 L ELECTRON DEVICE G a As INFRARED EMITTING DIODE SE316(L) is a GaAs Infrared Em itting Diode which is mounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 940 nm.
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SE316
SE316
IEI-1209)
CBRD
IEI-1209
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Untitled
Abstract: No abstract text available
Text: NEC LIGHT EM ITTING EifCTROfJ DCVICE DIODE SE302A GaAs INFRARED EM ITTING DIODE INDUSTRIAL USE -N E P O C SERIES - DESCRIPTION The SE302A is a GaAs G allium Arsenide Infrared Lig h t E m ittin g Diode w hich is m ounted on the lead fram e and m olded in
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SE302A
SE302A
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Untitled
Abstract: No abstract text available
Text: Galliumarsenidphosphid-Lumineszenzdioden GaAsP Red Light Emitting Diodes Anwendung: Application: Rotleuchtende Diode für allgemeine Anzeigezwecke Red light em itting diode for general indicating purposes Besondere Merkmale: Features: • Kunststoffgehäuse
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SE310
Abstract: PH110
Text: NEC ELECTRONICS INC 3QE D • 1=427525 0 0 2 ‘iû5b M ■ /> T -tl-ll LIGHT EMITTING DIODE SE310 GaAs INFRARED E M IT T IN G DIODE DESCRIPTION The SE310 is a GaAs Gallium Arsenide Infrared Em itting Diode which is mounted on the lead frames and molded in plastic.
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SE310
SE310
PH110
fcj4E7555
T-41-11
PH110
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T1596
Abstract: 6DE4 I960 r7hr general electric IT-T1596
Text: 6D E4 6DE4 IT-T1596 Page 1 DIODE TUBES 2 -6 0 FOR TV DAMPING DIODE APPLICATIONS = DESCRIPTION AND RATING = The 6DE4 is a single heater-cathode-type diode designed for use as the damping diode in the horizontal-deflection circuit of television receivers. BASING DIAG RAM
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IT-T1596
approximate91'
K-556
T1596
6DE4
I960
r7hr
general electric
IT-T1596
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D1N4446
Abstract: 1N4446 ITT diode 150D
Text: ITT SEfllCOND/ INTERflETA 50E D 4 b ö 5 ? ll 0003017 ÔÔT • ,T 1N4446 IS I ' o> - o q Silicon Epitaxial Planar Diode fast switching diode. r m ax.1.9^ ma x.1.9^ * This diode is also available in glass case DO-34 f C a thode Mark C a tho de M ark m a x .0.42 ?
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1N4446
DO-34
DO-35
DO-34
DO-35)
D1N4446
1N4446
ITT diode
150D
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se3-13
Abstract: No abstract text available
Text: NEC DATA SHEET SE313 LIGHT EMITTING DIODE ELECTRON DEVICE GaAs INFRARED EMITTING DIODE -N E P O C SERIES— DESCRIPTION The SE313 is a GaAs G allium Arsenide Infrared E m ittin g Diode which is m ounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band o f radiation peaking at 940 nm.
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SE313
SE313
se3-13
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NDL7001 1 310 nm FIBER OPTIC COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode for fiber optic communications and has a strained Multiple Quantum Well stMQW structure and a built-in InGaAs monitor photo diode.
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NDL7001
NDL7001
b4S752S
b427525
b427525
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BAX12
Abstract: 74127
Text: BAX 12 'W Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Schutzdiode in F ernsprechverm ittlungsanlagen Applications: Protection d io d e in telephone sw itching systems Features: Besondere Merkmale: • C ontrolled avalanche characteristic
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BAX12
BAX12
74127
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Untitled
Abstract: No abstract text available
Text: NEC LIG H T EM ITTIN G DIODE a f C T O N DEVICE SR106CA GaAsP LIGHT EM ITTING RED DIODE -N E P O C S E R IE S - DESCRIPTION The SR 106C A is a GaAsP Gallium Arsenide Phosphide Light Emitting Diode which is mounted on the lead frames and molded in clear plastic. It is ideally suited for front panel indicator applications.
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SR106CA
SR106CA
094MAX
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1n4448 itt
Abstract: Color code diode DO-35 diode ITT specification 150D 1N4448 diode 1N4448 D1N4448
Text: ITT S E n i C O N D / INTERPIETA SOE D 4b a a ? n o o o a a a i aoo • is i " r * Q 3 *o °i 1N4448 Silicon Epitaxial Planar Diode fast switching diode. This type in case DO-35 is also available to specification CECC 50.001.023 max. 1.90 This diode is also available in glass case DO-34
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1N4448
DO-35
DO-34
4baP711
DO-35)
1n4448 itt
Color code diode DO-35
diode ITT specification
150D
1N4448
diode 1N4448
D1N4448
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BY588
Abstract: No abstract text available
Text: {[ N AMER P H I L I P S / D I S C R E T E SSE D • ^53131 - Q01t71t 2 BY588 T - û i- ie r BASE-EMITTER EFFICIENCY DIODE Solid-glass passivated rectifier diode in a hermetically sealed axial-leaded glass envelope. T he device is intended fo r use as efficiency diode in horizontal deflection circuits between base and em itter terminals
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bbS3T31
0Qlb71b
BY588
OD-57.
0aib71&
7Z88947
BY588
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Untitled
Abstract: No abstract text available
Text: DATA SHEET N EC LIGHT EMITTING DIODE SE1103 ELECTRON DEVICE HIGH SPEED INFRARED LIGHT EM ITTIN G DIODE D E SC R IP T IO N The SE1103 is a G a A IA s Infrared Light Emitting Diode which is mounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 890 nm.
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SE1103
SE1103
IEI-1209)
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Untitled
Abstract: No abstract text available
Text: Optointerrupter Specifications H22A4, H22A5, H22A6 Optointerrupter GaAs Infrared Emitting Diode and NPN Silicon Phototransistor Module with 1mm Aperture The H22A Interrupter M odule is a gallium arsenide infrared em itting diode coupled to a silicon phototransistor in a
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H22A4,
H22A5,
H22A6
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22LL
Abstract: H22L2
Text: Optointerrupter Specifications_ H22L1, H22L2 Optointerrupter GaAs Infrared Emitting Diode and Microprocessor Compatible Schmitt Trigger Module with 1mm Aperture ' M I L L IMETERS i T h e H22L series is a gallium arsenide, in frared em itting diode
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H22L1,
H22L2
22LL
H22L2
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RSIG diode
Abstract: TFK 347 P 2347 V139P PF126
Text: V 138 P • V 139 P Galiiumarsenidphosphid-Lumineszenzdioden GaAsP Red Light Emitting Diodes Anwendung: Rotleuchtende Diode für allgemeine Anzeigezwecke Application: Red light em itting diode for general indicating purposes Besondere Merkmale: Features: • M iniatur-Kunststoffgehäuse
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V139P
RSIG diode
TFK 347
P 2347
PF126
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NPN Silicon Phototransistor
Abstract: No abstract text available
Text: O ptoisolator Specifications H11G1, H11G2 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T h e H U G series consists o f a gallium arsenide, infrared em itting diode coupled with a silicon Darlington-connected
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H11G1,
H11G2
NPN Silicon Phototransistor
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11851
Abstract: MIB51T
Text: CRO MIB51T INFRARED EM ITTING DIODE 04.98 0.196 DESCRIPTION MIB51T is GaAlAs infrared emitting diode molded in T -l 3/4 standard 5mm diameter clear transparent lens. 8.7 (0.34) 1.0 - 2.54(0.1) ABSOLUTE MAXIMUM RATINGS • • • Forward Current (Continuous)
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MIB51T
MIB51T
100mA
160mW
11851
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diode ITT
Abstract: 1n4448 itt 1N4448 LL4448 QQQ317D
Text: ITT SEMICOND/ INTERMETALL blE D • 4bfl2711 0ÜG31t.ô fibE * I S I LL4448 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard JEDEC 1N4448 K 3.510.1- Cathode Mark
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4bfl2711
LL4448
1N4448
4ba2711
diode ITT
1n4448 itt
1N4448
LL4448
QQQ317D
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Untitled
Abstract: No abstract text available
Text: O K I electronic components QLD2210_ GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION T he O LD 2210 is a high output GaAIAs infrared light em itting micro-diode sealed with a collimator lens com posed of transparent epoxy resin. FEATURES
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QLD2210_
QLD2210
OLD2210
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BB629
Abstract: ITT Intermetall
Text: ITT SEP1IC0ND/ INTERMETALL 50E ]> • 4bfi2711 D0D2b5D E4T m i S I 'TOI-lOj BB629 Tuner Diode Silicon Epitaxial Planar Capacitance Diode in MiniMELF case MELF = Metal ELectrodes Face-bonding especially suited for automatic insertion with very high effective capacitance
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Q02b5G
BB629
BB629
ITT Intermetall
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Untitled
Abstract: No abstract text available
Text: Generic Optoisolator Specifications_ GEPS2001 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor M IN . M AX. .040 .090 085 012 203 2 64 INFRARED E M ITTIN G DIODE 9 53 3.43 6 66 2.92 6.10 milliwatts milliamps ampere
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GEPS2001
GEPS2001
H51868
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1n4148 ITT
Abstract: 4148 itt LL4148 n4148 LL4148 dynamic resistance ITT DIODE LL4148-1 150D 1N4148
Text: ITT SEMICOND/ INTERMETALL blE J> M Mbfl2711 0003152 4T5 M I S I LL4148 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard JEDEC 1N4148 I- 3.510.1-r Cathode M ark
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4bfl2711
LL4148
1N4148
DQQ31SS
1n4148 ITT
4148 itt
LL4148
n4148
LL4148 dynamic resistance
ITT DIODE
LL4148-1
150D
1N4148
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