HOA0973-P51
Abstract: No abstract text available
Text: Home> Products > Detector > Optoschmitt Sensor > Product Page HOA0973-P51 Order Product and Get Support U.S. Authorized Distributors HOA Series Infrared Opaque Optoschm itt Sensor, Diode Output, Single Mounting Tab, Detector Side, Plastic Package Global Sales & Service
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HOA0973-P51
HOA0973-P51
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HOA0973-L51
Abstract: hoa0973l51
Text: Home> Products > Detector > Optoschmitt Sensor > Product Page HOA0973-L51 Order Product and Get Support U.S. Authorized Distributors HOA Series Infrared Opaque Optoschm itt Sensor, Diode Output, Single Mounting Tab, Em itter Side, Plastic Package Global Sales & Service
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HOA0973-L51
HOA0973-L51
hoa0973l51
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Untitled
Abstract: No abstract text available
Text: DIGITAL DIODE PHASE SHIFTERS SERIES DP 0.25–5.1 GHz GENERAL INFORMATION SMA FEMALE TYP. ITT CANNON MDB1-9PSP OR EQUIV. KDI/Triangle’s switched line digital phase shifters are controllable by binary logic. If a 360° phase shifter having sixteen discrete steps is
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25noseconds
DP-51-1)
DP-21
DP-32
DP-33
DP-36
DP-41
DP-42
DP-44
DP-51
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ITT DIODE
Abstract: 8 Position 16 Pin SPST dip switch 1A219001G 1A212001G 1A211001G EECO 2100 1A210001G EECO Switch EECO itt rotary switch 14 positions
Text: CROSS REFERENCE GUIDE EECO SWITCH To ITT/ C & K PRODUCTS EECO Switch A Transico Company 800 854-3808 (714) 835-6000 FAX: (714) 482-9429 Web: www.eecoswitch.com E-Mail: sales@eecoswitch.com Revised 02/22/2005 CROSS - REFERENCE GUIDE EECO SWITCH To ITT/ C &K
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diode cross reference 1s1555
Abstract: diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
Text: 2000.8 CROSS REFERENCE •スイッチングダイオード Switching diodes Maker Package Code DO-35 TOSHIBA 1S1555, 1S1588 1SS104 1S1553, 1S1554 MHD LLD NEC 1S953 MATSUSHITA MA150 MA161 1S1586, 1S1587 1S954, 1S955 1SS176 1SS202 1SS178, 1SS177 1SS202 1 DLS1585,
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DO-35
1S1555,
1S1588
1SS104
1S1553,
1S1554
1S953
MA161
1S1586,
1S1587
diode cross reference 1s1555
diode cross reference 1s2473
IPS302
1SS211
1S2473 DIODE equivalent
1S2473 DIODE
toshiba diode do-41
1s1555 diode
1ss202
1SS153
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BU4508DX equivalent
Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
Text: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
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BT148-600R
BT148-400R
BU4508DX equivalent
BUT11APX equivalent
S0806MH
P0201MA TO92
BT136 application note
diode cross reference BYW96E
ct 2A05 diode
BU2508Dx equivalent
ST2001HI equivalent
BU2508DF equivalent
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BUT11APX equivalent
Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
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BT148-600R
BT148-400R
BUT11APX equivalent
BU4508DX equivalent
2SD1876
2Sd1651 equivalent
BYS21-45
smd zener diode color band
2SD1878 data sheet
2SC5296 equivalent
BT151-600R
BUK98150 spice
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S945
Abstract: photodiode ge CLI890 892m 00010-B
Text: CLI890 Series Optical Switches G ENERA L D ESCRIPTIO N This optical switch series couples an infrared em it ting diode and a m onolithic integrated circuit con tain in g a photodiode, low level am plifier, Schm itt trigger and output stage. The Schm itt trigger hys
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CLI890
33mw/Â
8910M
8905M
8912M
8925M
8914M
8945M
00010b?
S945
photodiode ge
892m
00010-B
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ERBI2-04
Abstract: ERB12 T810
Text: ERB 12 1 .OA Outline Drawings f * - K _ GENERAL USE RECTIFIER DIODE Features • 'J tM K ft Compact size, light weight • A ftS Itt High reliability Applications General purpose rectifier applications ^7 -3 -K Color code E R B I2-0I : White a ERB 12 - 02 ; Orange
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ERB12
l95t/R89
ERBI2-04
T810
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DIODE A112
Abstract: ra8040 ESAD25 SC-65 A114
Text: ESAD25 C,Nf D ( i s a ) > a a t a t ^ » - K FA ST RECO VERY DIODE 1 4 # ^ : Features ¿v-m otttoM iztf& i' High voltage by mesa design 'ftM Itt High reliability ;C Connection Diagram IffliS l ! Applications ESAD25-DDC ° ESAD25-DGN (Do- ^ ► l -0(3)
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ESAD25
SC-65
ESAD25-DDC
ESAD25-DGN
ESAD25-DDD
DIODE A112
ra8040
SC-65
A114
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M74C14N
Abstract: 74C14M
Text: O ctober 1987 Revised Ja nuary 1999 S E M IC O N D U C T O R !!^ MM74C14 Hex Schmitt Trigger General Description All inputs are protected from dam age due to static dis charge by diode clam ps to Vc c and GND. The M M 74C 14 Hex S chm itt Trigger is a m onolithic com ple
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MM74C14
M74C14N
74C14M
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Untitled
Abstract: No abstract text available
Text: Temic TSML3700 S e m i c o n d u c t o r s GaAs/GaAlÀs Infrared Emitting Diode in SMT Package Description T S M L 3 7 0 0 is a n in f r a re d e m itt in g d io d e in G a A lA s o n G a A s te c h n o lo g y in a m i n ia t u r e P L - C C 2 S M D package.
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TSML3700
ct-96
16-Oct-96
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Untitled
Abstract: No abstract text available
Text: Tem ic TSTA7500 Sem i r o n du< t or s GaAlAs IR Emitting Diode, Hermetically Sealed T 018 Case Description T S T A 7 5 0 0 is a h ig h e f f i c ie n c y in f r a re d e m itt in g d io d e in G a A lA s o n G a A lA s te c h n o lo g y in a h e r m e ti c a ll y s e a le d
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TSTA7500
15-JuI-96
15-Jul-96
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Untitled
Abstract: No abstract text available
Text: Temic CQY36N S e m i c o n d u c t o r s GaAs Infrared Emitting Diode in Miniature T -3/» Package Description C Q Y 3 6 N is a s ta n d a r d G a A s in f r a re d e m itt in g d io d e in a m i n ia t u r e to p v ie w p la s tic p a c k a g e . Its f la t w in d o w p r o v id e s a w id e a p e r t u r e m a k in g it id e a l
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CQY36N
15-Jul-96
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DIODE ITT 310
Abstract: OC70P2 transistor 1p3
Text: c*o OPTOELECTRONICS |* _ PH O TO TR A N SISTO R O P T IC A L IN T E R R U P T E R S W IT C H ES •Q £ h* .312 7.83 .j (- 1 2 4 (3 151 J-.1P3 ¡2.6) NOM .122(3.10) I T1 C ia p Ù o e r îiii'e Pai s W itt! ' ■/JniU' M u m b i; tm in . ._££>/S e iì a s .,
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H21A1
C70P1
C70P2
DIODE ITT 310
OC70P2
transistor 1p3
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KT853
Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
3N24x
24xTX
KT853
KT850
KT853A
LTR-305D
H0A0872-n55
H0A1405-1
h0a2001
MOC70T3
HOA708-1
smd diode 825B
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Untitled
Abstract: No abstract text available
Text: 2DI5OZ-12O 50a > \.— V POW ER T R A N S IST O R M ODULE : Features • ¡SW/ï High Voltage • 7 V —f r 'f !J > 9 9 -4 • A S O é '- jS ^ • ÎÊS lJfÎ KF*9i Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type Applications
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2DI5OZ-12O
1995-9095t/R89
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QM600HA-24
Abstract: 3102A qm600ha-2 qm600 qm600H
Text: MITSUBISHI TRANSISTOR MODULES QM600HA-24K HIGH POWER SWITCHING USE INSULATED TYPE QM600HA-24K • lc • Vcex Collector current. 600A Collector-emitter voltage.1200V • hFE DC current gain.75
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QM600HA-24K
QM600HA-24
3102A
qm600ha-2
qm600
qm600H
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PDF
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08/TBA 2800
Abstract: TBA 2800
Text: TBA 2800 Infrared Pream plifier 1C A A A A A A A Bipolar integrated circuit, intended as a receiver preamplifier for Central Control Unit for the infrared remote-control sy stems designed with integrated circuits of ITT. y y y y y y y The TBA 2800 preamplifier 1C contains four main parts: the
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50-Hz-modulated
4bfl2711
08/TBA 2800
TBA 2800
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ITT DIODE 125
Abstract: No abstract text available
Text: S ÏÏT Æ 1997 IT T • IN 4bô2711 0üübS7E TMb ■ T E R M E T A L L HAL115 Marking Code Hall Effect Sensor 1C in CMOS technology Temperati.ire Range Type Features: E C - operates from 4.3 to 24 V supply voltage with reverse voltage protection HAL 115UA
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HAL115
115UA
HAL115S
OT-89A:
O-92UA:
GG0b27fi
ITT DIODE 125
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UDN5712
Abstract: ca 5713 UDN5712N UDN5713N UDN5714 UDN5714N udn5713 CMOS Dual Peripheral Drivers
Text: Siginetics Interface - Peripheral Power Driver UDN 5711/5712/5713/5714 Dual High Voltage Peripheral Drivers CONNECTION DIAGRAM GENERAL DESCRIPTION The UDN 5711 series of dual peripheral drivers have high voltage 80V and high current (300mA) NPN output transistors. In addition an overshoo-: clamp diode is pro
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300mA)
UDN5712
ca 5713
UDN5712N
UDN5713N
UDN5714
UDN5714N
udn5713
CMOS Dual Peripheral Drivers
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D-10
Abstract: D-12 KD221203 transistor E21
Text: m ß /B s KD221203 x Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U d l D d r lltlC jtO n Transistor Module 30 Amperes/1200 Volts O U T L I N E DRAWING Description: The Powerex Dual Darlington Transistor Modules are high power
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KD221203
Amperes/1200
EIC20-
100uj
D-10
D-12
KD221203
transistor E21
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129 ITT zener
Abstract: ITT DIODE 129 SD5600 SD5200 SD5200N SD5301 SD5301N SD5600N Zener diode itt "Pin compatible" Signetics
Text: S ig n e tic s Integrated C irc u its-D M O S SD5200 Quad analogue S.P.S.T. driver C O N N E C T IO N D IA G R A M Tem perature range: Industrial 0°C to 8 5° C • • • • • • D rive capability ± 15 V Ultra-fast t j O N 1 ns (max) Isolation (at 3 kH z) — 105 d B (typ)
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SD5200
SD5200N
SD5301
SD530(
129 ITT zener
ITT DIODE 129
SD5600
SD5301N
SD5600N
Zener diode itt
"Pin compatible" Signetics
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Untitled
Abstract: No abstract text available
Text: Preliminary SMBL1G100US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS Package code : 7-PM-AA • Boost(Step Up) Converter
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SMBL1G100US60
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