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    DIODE K261 Search Results

    DIODE K261 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE K261 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    k2617

    Abstract: IT05191
    Text: 2SK2617LS Ordering number : EN5443B N-Channel Silicon MOSFET 2SK2617LS General-Purpose Switching Device Applications Features • Low ON-resistance. • Low Qg. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage


    Original     		PDF 2SK2617LS EN5443B k2617 IT05191

    K2617

    Abstract: 2SK2617 2SK2617LS ENN5443A
    Text: Ordering number : ENN5443A 2SK2617LS N-Channl Silicon MOSFET 2SK2617LS Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Low Qg. unit : mm 2078C [2SK2617LS] 10.0 4.5 2.8 0.6 16.1 16.0 3.5 7.2 3.2 1.2 1.2 14.0 3.6


    Original     		PDF ENN5443A 2SK2617LS 2078C 2SK2617LS] O-220FI K2617 2SK2617 2SK2617LS ENN5443A

    Untitled

    Abstract: No abstract text available
    Text: 2SK2618ALS Ordering number : ENA0360 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2618ALS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-speed switching. Micaless package facilitating mounting.


    Original     		PDF 2SK2618ALS ENA0360 A0360-4/4

    k2617

    Abstract: No abstract text available
    Text: 2SK2617ALS Ordering number : ENA0361 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2617ALS General-Purpose Switching Device Applications Features • • • Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF 2SK2617ALS ENA0361 A0361-4/4 k2617

    k2617

    Abstract: 2SK2617ALS
    Text: 2SK2617ALS Ordering number : ENA0361A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2617ALS General-Purpose Switching Device Applications Features • • • Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF 2SK2617ALS ENA0361A A0361-4/4 k2617 2SK2617ALS

    k2618

    Abstract: 2SK2618ALS 2SK2618 IT1084
    Text: 2SK2618ALS Ordering number : ENA0360B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2618ALS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-speed switching. Micaless package facilitating mounting.


    Original     		PDF 2SK2618ALS ENA0360B A0360-4/4 k2618 2SK2618ALS 2SK2618 IT1084

    k2617

    Abstract: 2SK2617LS EN5443C
    Text: 2SK2617LS Ordering number : EN5443C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2617LS General-Purpose Switching Device Applications Features • • • Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF 2SK2617LS EN5443C k2617 2SK2617LS EN5443C

    k2618

    Abstract: 2SK2618ALS 2SK2618 IT1084
    Text: 2SK2618ALS Ordering number : ENA0360A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2618ALS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-speed switching. Micaless package facilitating mounting.


    Original     		PDF 2SK2618ALS ENA0360A A0360-4/4 k2618 2SK2618ALS 2SK2618 IT1084

    k2617

    Abstract: 2SK2617ALS ENA0361B IT1084
    Text: 2SK2617ALS Ordering number : ENA0361B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2617ALS General-Purpose Switching Device Applications Features • • • Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF 2SK2617ALS ENA0361B A0361-4/4 k2617 2SK2617ALS ENA0361B IT1084

    K2610

    Abstract: transistor k2610 Toshiba K2610 k2610 toshiba 2SK2610
    Text: 2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2610 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) High forward transfer admittance : |Yfs|= 4.4 S (typ.)


    Original     		PDF 2SK2610 K2610 K2610 transistor k2610 Toshiba K2610 k2610 toshiba 2SK2610

    K2610

    Abstract: transistor k2610 Toshiba K2610 k2610 toshiba 2SK2610 SC-65 K-261
    Text: 2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2610 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) z High forward transfer admittance : |Yfs|= 4.4 S (typ.)


    Original     		PDF 2SK2610 K2610 K2610 transistor k2610 Toshiba K2610 k2610 toshiba 2SK2610 SC-65 K-261

    B0BC9R000008 DIODE

    Abstract: B0BC6R100010 B0BC01700015 B0BC9R000008 varistor k271 Diode C65 004 LYNX3DM transistor C388 B0BC3R700004 3225 K30
    Text: ORDER NO. CPD0207023C0 Personal Computer CF-R1 This is the Service Manual for the following areas. M …for U.S.A. and Canada E …for U.K. G …for Germany F …for France T …for Italy P …for Spain Model No. CF-R1P82ZV1 2 1: Operation System G: Microsoft Windows® XP Professional


    Original     		PDF CPD0207023C0 CF-R1P82ZV1 DTA144EE BRPY1211F LN1361C B0BC9R000008 DIODE B0BC6R100010 B0BC01700015 B0BC9R000008 varistor k271 Diode C65 004 LYNX3DM transistor C388 B0BC3R700004 3225 K30

    Untitled

    Abstract: No abstract text available
    Text: 2SK2614 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SK2614 Chopper Regulator, DC-DC Converter and Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.032 Ω (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)


    Original     		PDF 2SK2614

    K2611

    Abstract: transistor k2611 toshiba transistor k2611 toshiba K2611 K2611 toshiba INFORMATION ON K2611 K261-1 transistor Toshiba K2611 2SK2611 k2611 Transistor
    Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2611 K2611 transistor k2611 toshiba transistor k2611 toshiba K2611 K2611 toshiba INFORMATION ON K2611 K261-1 transistor Toshiba K2611 2SK2611 k2611 Transistor

    k2610 toshiba

    Abstract: K2610 transistor k2610 Toshiba K2610 toshiba transistor k2610 2SK2610 SC-65 DIODE 436
    Text: 2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2610 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) z High forward transfer admittance : |Yfs|= 4.4 S (typ.)


    Original     		PDF 2SK2610 k2610 toshiba K2610 transistor k2610 Toshiba K2610 toshiba transistor k2610 2SK2610 SC-65 DIODE 436

    toshiba transistor k2611

    Abstract: K2611 toshiba K2611 transistor k2611 K2611 toshiba transistor Toshiba K2611 k2611 Transistor INFORMATION ON K2611 K261-1 k2611 a
    Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2611 toshiba transistor k2611 K2611 toshiba K2611 transistor k2611 K2611 toshiba transistor Toshiba K2611 k2611 Transistor INFORMATION ON K2611 K261-1 k2611 a

    K2134

    Abstract: transistor k314 3225 K30 Transistor k221 NEC K2134 K43E ricoh fb5 front panel cn30 transistor bipolar k72 K294 K1MMZZB00002
    Text: ORDER NO. CPD0309020C1 Notebook Computer CF-29 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model No. CF-29CTKGZ1M 1: Operation System D: Microsoft Windows® 2000 K: Microsoft® Windows® XP Professional 2-1 LASER SAFETY INFORMA TION


    Original     		PDF CPD0309020C1 CF-29 CF-29CTKGZ1M EN60825 CF-29 K2134 transistor k314 3225 K30 Transistor k221 NEC K2134 K43E ricoh fb5 front panel cn30 transistor bipolar k72 K294 K1MMZZB00002

    K2614

    Abstract: 2SK2614 K261
    Text: 2SK2614 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type L −π−MOSV 2SK2614 Unit: mm Chopper Regulator, DC/DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON-resistance : RDS (ON) = 0.032 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SK2614 K2614 2SK2614 K261

    Untitled

    Abstract: No abstract text available
    Text: 2SK2614 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2614 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.032 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SK2614

    toshiba k2613

    Abstract: K2613
    Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF 2SK2613 toshiba k2613 K2613

    2SK2613

    Abstract: k2613 toshiba k2613 K2613 TOSHIBA K261
    Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF 2SK2613 2SK2613 k2613 toshiba k2613 K2613 TOSHIBA K261

    K2614

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SK2614 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE L^ tt-M O S V 2SK2614 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS


    OCR Scan     		PDF 2SK2614 100//A K2614

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643