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    DIODE K363 Search Results

    DIODE K363 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE K363 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3636 Silicon N-channel power MOSFET Unit: mm 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 For high-speed switching 13.7±0.2 4.2±0.2 Solder Dip • Avalanche energy capacity guaranteed: EAS > 20 mJ


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    2002/95/EC) 2SK3636 PDF

    K3636

    Abstract: 2SK3636
    Text: Power MOSFETs 2SK3636 Silicon N-channel power MOSFET Unit: mm 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 For high-speed switching 13.7±0.2 4.2±0.2 Solder Dip • Avalanche energy capacity guaranteed: EAS > 20 mJ • Gate-source surrender voltage VGSS = ±30 V guaranteed


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    2SK3636 K3636 2SK3636 PDF

    52s marking code transistor

    Abstract: 52s marking code 52s marking 2SK3633 SC-65
    Text: 2SK3633 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 5.2S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


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    2SK3633 52s marking code transistor 52s marking code 52s marking 2SK3633 SC-65 PDF

    2SK3636

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3636 Silicon N-channel power MOSFET Unit: mm 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 For high-speed switching 15.0±0.5 φ 3.2±0.1 M Di ain sc te on na tin nc ue e/ d • Features


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    2002/95/EC) 2SK3636 2SK3636 PDF

    toshiba a114

    Abstract: 2SK3633 SC-65 K3633 200VW
    Text: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)


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    2SK3633 toshiba a114 2SK3633 SC-65 K3633 200VW PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)


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    2SK3633 PDF

    2SK3633

    Abstract: SC-65
    Text: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)


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    2SK3633 2SK3633 SC-65 PDF

    2SK3633

    Abstract: SC-65
    Text: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)


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    2SK3633 2SK3633 SC-65 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type −MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)


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    2SK3633 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)


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    2SK3633 PDF

    metrahit Multimeter service manual

    Abstract: 49a hall sensor Metrawatt METRAPHASE 1 PC Printer Port Controls I-V Curve Tracer GEOHM 3 metrahit 14 service manual PROTECTIVE RELAY CEE MANUFACTURER 1/METRISO 1000v METRACLIP 20
    Text: Table of Contents Measuring Instruments GMC-I Messtechnik GmbH GMC-Instruments Nederland B.V. Daggeldersweg 18 NL-3449 JD Woerden Phone: +31 348 42 11 55 Fax: +31 348 42 25 28 E-mail: info@gmc-instruments.nl www.gmc-instruments.nl GMC-Instruments Austria GmbH


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    F-91349 CZ-67801 I-20046 E-08940 metrahit Multimeter service manual 49a hall sensor Metrawatt METRAPHASE 1 PC Printer Port Controls I-V Curve Tracer GEOHM 3 metrahit 14 service manual PROTECTIVE RELAY CEE MANUFACTURER 1/METRISO 1000v METRACLIP 20 PDF

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


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    30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122


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    P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor PDF

    diode k363

    Abstract: diode A25 AU61 AM3599
    Text: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022 v1.0 December 7, 1999 3* Features Advance Product Specification • High-performance Built-in Clock Management Circuitry - Eight fully digital Delay-Locked Loops (DLLs) • Fast, High-density 1.8 V FPGA Family


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    DS022 32/64-bit, 66-MHz diode k363 diode A25 AU61 AM3599 PDF

    GSR 10,8

    Abstract: DLL5 BG432 ic 404 BB112 equivalent
    Text: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.0 April 2, 2001 Preliminary Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 Kb to 4 Mb system gates - 130 MHz internal performance (four LUT levels)


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    DS022-1 32/64-bit, 66-MHz DS022-1, DS022-3, DS022-2, DS022-4, DS022-4 GSR 10,8 DLL5 BG432 ic 404 BB112 equivalent PDF

    K2466

    Abstract: H1342 AU61
    Text: 901592 Virtex -E 1.8 V Field Programmable Gate Arrays R DS022 v1.5 July 10, 2000 3* Features Preliminary Product Specification High-performance Built-in Clock Management Circuitry - Eight fully digital Delay-Locked Loops (DLLs) • Fast, High-density 1.8 V FPGA Family


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    DS022 32/64-bit, 66-MHz F1156 K2466 H1342 AU61 PDF

    A21n

    Abstract: digital dice design VHDL k41 dob Quadrature Decoder Interface ICs
    Text: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022 v1.9 February 12, 2001 Preliminary Product Specification Features • • • • High-Performance Built-In Clock Management Circuitry Densities from 58 Kb to 4 Mb system gates - Eight fully digital Delay-Locked Loops (DLLs)


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    DS022 32/64-bit, 66-MHz FG860 XCV1000E XCV2000E XCV400E XCV600E A21n digital dice design VHDL k41 dob Quadrature Decoder Interface ICs PDF

    XCV1000E

    Abstract: XCV1600E XCV400E XCV600E XCV2000E XCV200E XCV300E XCV50E DS022-1 XCV100E
    Text: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.3 July 17, 2002 Production Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels)


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    DS022-1 32/64-bit, 66-MHz XCV1000E, 1600E, 2000E" DS022-1, DS022-2, DS022-4 DS022-3, XCV1000E XCV1600E XCV400E XCV600E XCV2000E XCV200E XCV300E XCV50E DS022-1 XCV100E PDF

    ao21

    Abstract: XCV300E-6PQ240C
    Text: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022 v1.6 August 1, 2000 Preliminary Product Specification Features • • • - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels) - Designed for low-power operation


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    DS022 32/64-bit, 66-MHz F1156 ao21 XCV300E-6PQ240C PDF

    K363 equivalent

    Abstract: n345 AF125 XCV1000E d30122 A281 horizontal driver transistor D155 AY102 j281 pioneer amplifier an214
    Text: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022 v1.7 September 20, 2000 Preliminary Product Specification Features • • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels)


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    DS022 32/64-bit, 66-MHz XCV2600E XCV3200E XCV100E" XCV600E" XCV100E XCV1000E, K363 equivalent n345 AF125 XCV1000E d30122 A281 horizontal driver transistor D155 AY102 j281 pioneer amplifier an214 PDF

    g4aoo

    Abstract: XCV1000E CG1156
    Text: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.0 April 2, 2001 Preliminary Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 Kb to 4 Mb system gates - 130 MHz internal performance (four LUT levels)


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    DS022-1 32/64-bit, 66-MHz DS022-1, DS022-3, DS022-2, DS022-4, DS022-4 g4aoo XCV1000E CG1156 PDF

    diode T25-4

    Abstract: IC AN214 N345 pioneer amplifier an214 XCV1600E ac3 amplifier circuit diagram AN214 amplifier horizontal driver transistor D155 K235 XCV300E-6PQ240C
    Text: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.2 November 9, 2001 Preliminary Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels)


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    DS022-1 32/64-bit, 66-MHz FG1156 XCV3200E DS022-1, DS022-2, DS022-4 DS022-3, diode T25-4 IC AN214 N345 pioneer amplifier an214 XCV1600E ac3 amplifier circuit diagram AN214 amplifier horizontal driver transistor D155 K235 XCV300E-6PQ240C PDF

    transistor KSP 42

    Abstract: KEL5002A PC17L1 KDP6004A ksp 13 replacement KPI-L05 KST-312 PC-17K1 PC-17L1 KPI-261D
    Text: Contents Optoelectronic Sensors Contents 08 Detectors 10 Emitters 12 Photo Interrupters 16 Photo Couplers 21 Photo ICs 24 Optic Receiver Modules 26 LEDs 29 Infrared Transceiver Modules lrDA 31 Fiber Optic Devices(FOD) 33 Fiber Optic Transceivers(FOT) 34 Optical Communication Devices


    OCR Scan
    KHP2032 KOD-1017 KOD-1016 KOD-1086 KOD-1051 KOM-1020 KOM-1021 K0M-5121 transistor KSP 42 KEL5002A PC17L1 KDP6004A ksp 13 replacement KPI-L05 KST-312 PC-17K1 PC-17L1 KPI-261D PDF

    k3639

    Abstract: K379 K3793 ECKN
    Text: Thte document ti ttw w p m i a Corporation CUSTOMER DRAWING Amphand Corporation and b doltamd on ‘ to b * dlMloNd. rapreduood or uMd, In ar M l* bv anyofi* ottitr than Amphenol ngM I* granted to alodooo 4,60+0,04 1 "1 C? Iu REV ISIO N S SYM ECKN DESCRIPTION


    OCR Scan
    K3639 K3793 BBF16002N BBF16002N K379 ECKN PDF