Melcher LT 1740
Abstract: PV thyristor based battery charging MELCHER SWITCHING REGULATOR PSB 5A5 BPD 1003 LM 2000 melcher LT 1740 Melcher converter s 1000 PSB 5A5 Melcher MIL-38999
Text: Application Engineering Application Engineering 2.1 System Solutions 2 2 Customized Supplies 2-2 System Components 2-4 System Power 2-6 Battery Back-up 2-8 2.2 Rack Systems and Back Planes Rack Systems 2 - 11 Back Planes for the T-Family 2 - 12 2.3 Application Notes
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Melcher SR 30
Abstract: thyristor controlled lead acid battery charger LT3-L3 PV thyristor based battery charging MELCHER SWITCHING REGULATOR PSB 5A5 48V kW battery charger MELCHER psb 5a5 thyristor lead acid battery charging 3-Phase Full-Wave Bridge Rectifier L5A10
Text: Application Engineering Application Engineering 2.1 System Solutions 2 2 Customized Supplies 2-2 System Components 2-4 System Power 2-6 Battery Back-up 2-8 2.2 Rack Systems and Back Planes Rack Systems 2 - 11 Back Planes for the T-Family 2 - 12 2.3 Application Notes
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1N5420B
Abstract: uses of magnitude comparator LIMITING INRUSH CURRENT mosfet LTC 4120 P-Channel JFET 1N4148 AN21 J177 LMC7211 PT3320
Text: For assistance or to order, call AN21 Application Notes 800 531-5782 PT3100/3320/4100/4120/4420 Series More Application Notes “Hot Plug-in” In-rush Current Limiting Circuits for the PT3100/4100/3320 DC-DC Converters supply current to U1 is provided by resistors R3 and R4, which
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PT3100/3320/4100/4120/4420
PT3100/4100/3320
PT3320
LT1640
1N5420B
uses of magnitude comparator
LIMITING INRUSH CURRENT mosfet
LTC 4120
P-Channel JFET
1N4148
AN21
J177
LMC7211
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UGN 3075
Abstract: UGs 3030 UGN3177 APPLICATION NOTE unipolar stepper motor 6812 KA 3050C LT 3958 SI-3120C ugn 3019 HALL SENSOR UGN 3235 UGN3235
Text: AMS-173C Selection Guides ALLEGRO and SANKEN ICs and PMCMs PRODUCT SELECTION GUIDES ● General Information . page 2 ● Power Sink Drivers in order of output current . 3
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AMS-173C
20-Bit
32-Bit
10-Bit
12-Bit
UGN 3075
UGs 3030
UGN3177 APPLICATION NOTE
unipolar stepper motor 6812
KA 3050C
LT 3958
SI-3120C
ugn 3019 HALL SENSOR
UGN 3235
UGN3235
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KA 3052v
Abstract: 8120-s ka 7042 back-emf motor ugn3503 3122V 8033s
Text: AMS-173C Selection Guides ALLEGRO and SANKEN ICs and PMCMs PRODUCT SELECTION GUIDES ● General Information . page 2 ● Power Sink Drivers in order of output current . 3
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12-Bit
20-Bit
32-Bit
10-Bit
KA 3052v
8120-s
ka 7042
back-emf
motor ugn3503
3122V
8033s
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IN4620
Abstract: IN4105 1N4F Diode 1N41 IN411 1N4019 1N4099 1N4135 1N461 1N4614
Text: Micro/semi Corp. ? The diode experts SCOTTSDALE, AZ F o r m o re in fo r m a tio n call: 602 941-6300 1N4099 thru 1N4135 and 1N4614 thru 1N4627 DO-7 FEATURES • SILICON 400 mW LOW NOISE ZENER DIODES ZENER V O LT A G E 1.8V to 100V • ALL HAVE JAN, JANTX and JANTXV
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1N4099
1N4135
1N4614
1N4627
MIL-S-19500/435
66mW/Â
1N4099-1N4135
1N4614-1N4627
IN4620
IN4105
1N4F
Diode 1N41
IN411
1N4019
1N461
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thyristor tt 250 n 16
Abstract: thyristor TD 25 N ot 3000 DI 210 dt61n dt250n
Text: Thyristor Diode Modules for Current Source Inverters rrm V, V rrm V It r m sm A D iode (Thyr.) Its m lT A V M /tc V (T O ) rT (di/dt) cr V m£2 ^vj max A /°C 180° el sin ^vj max ^vj max A/(js DIN IEC 747-6 9,8 60/85 0,80 3,40 0,85 J ¡2dt kA2s kA 10 ms,
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3403ET7
0DD21Ã
/M6x15Z4-1
thyristor tt 250 n 16
thyristor TD 25 N
ot 3000
DI 210
dt61n
dt250n
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ITT DIODE 210
Abstract: 81 210 W 20 TD92N ITT DIODE 128 dt61n dt250n IC 7476
Text: Thyristor Diode Modules for Current Source Inverters rrm V, V rrm V It r m sm A D iode (Thyr.) Its m lT A V M /tc V (T O ) rT (di/dt) cr V m£2 ^vj max A /°C 180° el sin ^vj max ^vj max A/(js DIN IEC 747-6 9,8 60/85 0,80 3,40 0,85 J ¡2dt kA2s kA 10 ms,
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3403ET7
/M6x15Z4-1
ITT DIODE 210
81 210 W 20
TD92N
ITT DIODE 128
dt61n
dt250n
IC 7476
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Untitled
Abstract: No abstract text available
Text: SANSHA ELECTRIC MFG CO 5bE D 7T T 12M 3 DDDDS'ib 02fl • SEMJ - p diode M o n m .e DF £ 1O O A B PRELIMINARY ■ MAX I MUM RATINGS ' _ Unless other* 5se T j —25T2 Syabol Item R a tin g s U n it I D F 100A 8120 R e p e t i t i v e Peak R e v e rs e V o lt a g e
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102T2
50/80Hz,
A0514
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Untitled
Abstract: No abstract text available
Text: PD - 91302C International IQ R Rectifier IR F R /U 4 1 0 5 HEXFET Power MOSFET • • • • • Ultra Low O n-R esistance Surface M ount IR FR 4105 Straight Lead (IRFU 4105) Fast Switching Fully Avalanche Rated V dss = 55V RüS(on) = 0.045Î2 Description
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91302C
MS-022-BE
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diode SMD WL sot23
Abstract: smd code marking wl sot23 wl smd diode zener sot23 smd zener diode code wn sot23 Zener diode smd marking code WN zener SMD W9 sot 23 diode SMD Wp sot23 MARKING WF smd sot23 DIODE SMD w9 DIODE smd marking CODE WB
Text: c o a v c iiip SMDZenerDiode S M D D io d e s S p e c ia lis t CZRT55C2V4-GThru CZRT55C39-G Voltage: 2.4 to 39 Volts Power: 410 mWatts RoHS Device Features SOT-23 -P la n a r die co ns truc tion -4 1 0 m W power dissipation -Ideally suited for automated assembly
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CZRT55C2V4-GThru
CZRT55C39-G
4to39Volts
-410mW
OT-23,
SolderableperMIL-STD-202G
QW-BZ014
diode SMD WL sot23
smd code marking wl sot23
wl smd diode zener sot23
smd zener diode code wn sot23
Zener diode smd marking code WN
zener SMD W9 sot 23
diode SMD Wp sot23
MARKING WF smd sot23
DIODE SMD w9
DIODE smd marking CODE WB
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM600HA-28H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configura tion with a reverse-connected su per-fast recovery free-wheel diode.
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CM600HA-28H
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Diode LT 410
Abstract: HSMS-2840 LT 2807 HSMS2840 HSMS 2841 mark a7 sot23 DIODE XM2E marking codes sot-23 A4 diode hp 2800 HSMS-2820
Text: Thal HEW LETT m L’UMP A C K A R D Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Features • S u rface M ount SOT-23/ SOT-143 P ack age • Low Turn-On V oltage As Low as 0.34 V at 1 mA • L ow FIT (F ailure in Tim e) Rate*
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HSMS-28XX
OT-23/
OT-143
L024J
OT-143)
Diode LT 410
HSMS-2840
LT 2807
HSMS2840
HSMS 2841
mark a7 sot23 DIODE
XM2E
marking codes sot-23 A4
diode hp 2800
HSMS-2820
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ATIC
Abstract: No abstract text available
Text: SUPPLY VOLTAGE MONITOR ZM 33164-3 ISSUE 2 - NOVEMBER 1995 DEVICE DESCRIPTION FEATURES The ZM33164-3 is a three term inal under v o lta g e m o n it o r c ir c u it f o r use in m ic ro p ro c e s s o r system s. The th re sh o ld voltage o f the device has been set to 2.68
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ZM33164-3
OT223
ZM331643N8
ZM331643G
ZM331643C
ZM331643
ZM331643
ATIC
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B729
Abstract: No abstract text available
Text: 5EMIKR0N SKiiP 232 G PL 120 - 410 CTV E/M Absolute Maxim um R atings Symbol |Conditions 1< Units Values IG B T & Inverse Diode Vces Vcc 9> lc T i3> Vteoi41 If Ifm Ifsm I2! (Diode Characteristics Symbol Conditions 1 V(Bfl)CES ICES min. Driver without power supply
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Melcher LT 1740
Abstract: LT1740 melcher LT 1740 melcher DC-DC Converters Melcher lt1740 "AC-DC Converters" AC-DC Battery Charger -Constant Current with volt S3 24A relais Melcher lt LT1000
Text: Rugged Environment AC-DC Converters >100 W 500 W AC-DC Converters T-Family T-Family Input to output Isolation Single output: L T 1000 • Universal AC input range • 54.5 V DC output voltage for 48 V loads • Battery charging with internal or remote temperature
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LT1740
Melcher LT 1740
LT1740 melcher
LT 1740
melcher DC-DC Converters
Melcher lt1740
"AC-DC Converters"
AC-DC Battery Charger -Constant Current with volt
S3 24A relais
Melcher lt
LT1000
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Cesiwid
Abstract: 1,0F 5,5v MAXCAP LT055474A LP055104A 5.5v 0.047f lc055104 LP055105A LC055225A LF055104A
Text: CESIWID Maxcap Double layer Capacitors Maxcap Double Layer Capacitors T a b le o f C o n t e n t s ^ P r o d u c t In fo r m a tio n a n d 1 Product O v e rv ie w . 3
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m1305 transistor
Abstract: w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw
Text: INTEGRATED CIRCUITS BIPOLAR OPERATIONAL AMPLIFIER TY PE s I N G ¥ D U A L Q u A D H E X D E S C R IP T IO N NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM 022 N JM 022B NJM 062 N JM 072B N JM 082B NJM353 NJM1458 NJM2041 NJM2043 NJM2068 NJM2082
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NJMOP-07
NJM318
NJM741
NJM2107F
NJM2130
NJM425#
NJM5534
NJM353
NJM1458
NJM2041
m1305 transistor
w431
MRF1421C
Diode LT 4104
NJT1946A
7082a
NJT1949
magnetron 2j42
MSF1422B
magnetron 5kw
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM600HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configura tion with a reverse-connected su per-fast recovery free-wheel diode.
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CM600HA-24H
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VD357
Abstract: 18psk NF200 Diode LT 410
Text: International H Rectifier SERIES IRK.F200 FAST SCR I DIODE and SCR / SCR MAGN-A-pak Power Modules Features • ■ I ■ ■ Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3 0 0 0 V rms isolating voltage
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18to25
15-Gate
VD357
18psk
NF200
Diode LT 410
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IXGB16N60R2
Abstract: A2 082
Text: IXGB16N60R2 VC E S IC25 Dual Independent IGBTs and Diodes in Power SIP = 600 V = 16 A V CE sat = 2.5 V Power SIP Advanced data Symbol Maximum Ratings Test Conditions v CES Td = 25°C to 150°C 600 V V"CG R Tj = 25°C to 150°C; RGE = 1 MO 600 V v GES Continuous
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IXGB16N60R2
00V-1
flb22b
DD02245
000224b
A2 082
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IRFZ44N
Abstract: 11Nm MOSFET IRFZ44N irfz44
Text: PD - 9.1303B International IÖR Rectifier IRFZ44N HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175 °C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V ^ D S o n = 0.0220 lD = 49A Description
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1303B
IRFZ44N
O-220
IRFZ44N
11Nm
MOSFET IRFZ44N
irfz44
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diode B4E
Abstract: NDL4105-78 NDL4105-88 NDL4105A
Text: 30E D • b ^ S S S OGSTSOT 4 ■ N E C ELECTRONICS INC T'H-|'P7 LIGHT EMITTING DIODES _ / NDL4105A,4105-78,4105-88 850 nm,780 nm,880 nm O PTICAL FIBER COMMUNICATIONS AIGaAs LIGHT EMITTING DIODE DESCRIPTION N DL4105A, NDL4105-78, NDL4105-88 are AIGaAs light emitting diodes. These LEDs have suitable wavelength variation for
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NDL4105A
NDL4105A,
NDL4105-78,
NDL4105-88
NDL4105-78
780nm
diode B4E
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Diode LT 228
Abstract: No abstract text available
Text: PD - 9.1365A International IQ R Rectifier IR F R /U 1 2 0 N PRELIMINARY HEXFET Power MOSFET S u rfa c e M o u n t IR F R 1 2 0 N S tra ig h t Lead (IR F U 1 2 0 N ) A d v a n c e d P ro ce ss T e c h n o lo g y F ast S w itch in g F ully A v a la n c h e R ated
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