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    DIODE LT 42 Search Results

    DIODE LT 42 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE LT 42 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PoE Ideal Diode Bridge PoE Data Pairs ±VIN1 EN + VOUT LT4321 – EN To PoE PD Controller PoE Spare ±VIN2 Pairs Active Diode Bridge Controller Minimizes Power Loss and Heat in Power over Ethernet Powered Device The LT 4321 ideal diode bridge controller replaces two diode bridge rectifiers with low loss N-channel MOSFET bridges to increase


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    PDF LT4321 LT4321 350mA 600mA LT4275 com/4321 1-800-4-LINEAR

    749022016

    Abstract: 749022017 SMBJ58A
    Text: DEMO MANUAL DC2093A LT4275/LT4321 LTPoE+/IEEE 802.3at/ IEEE 802.3af Compliant Powered Device Interface Description Demonstration circuit 2093A features the LT 4275, a fourth generation powered device PD controller and the LT4321, an ideal diode bridge controller for Power over


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    PDF DC2093A LT4275/LT4321 LT4321, DC2093A DC2093A-A, DC2093A-B, DC2093A-C DC2093A-A LT4275A dc2093af 749022016 749022017 SMBJ58A

    Step-up 12V to 36V 300mA

    Abstract: LT3473 LT3473A LT3473AEDE LT3473EDD LTC3473A ltc3436 3473
    Text: LT3473/LT3473A Micropower 1A Boost Converter with Schottky and Output Disconnect U FEATURES DESCRIPTIO • The LT 3473/LT3473A are micropower step-up DC/DC converters with integrated Schottky diode and output disconnect circuitry in low profile DFN packages. The


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    PDF LT3473/LT3473A 3473/LT3473A 50mm2. LT3471 LT3479 TSSOP-16E 3473f Step-up 12V to 36V 300mA LT3473 LT3473A LT3473AEDE LT3473EDD LTC3473A ltc3436 3473

    a boost dc to ac inverter

    Abstract: LT1930 sharp oled display LQH32CN100K53 LQH32CN150K53 LT3494 LT3494EDDB dc ac inverter circuit
    Text: LT3494/LT3494A Micropower Low Noise Boost Converters with Output Disconnect FEATURES DESCRIPTION • The LT 3494/LT3494A are low noise boost converters with integrated power switch, Schottky diode and output disconnect circuitry. The parts use a novel* control technique resulting in low output voltage ripple as well as high


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    PDF LT3494/LT3494A 3494/LT3494A 350mA 180mA LT3494A LT3494 LT3463/LT3463A 250mA LT3471 3494fb a boost dc to ac inverter LT1930 sharp oled display LQH32CN100K53 LQH32CN150K53 LT3494EDDB dc ac inverter circuit

    LT3682EDD datasheet

    Abstract: LT3682EDD#PBF MARKING TRANSISTOR BD RC B150 LQH55D LT3682 eef 1208
    Text: LT3682 1A Micropower Step-Down Switching Regulator FEATURES DESCRIPTION n The LT 3682 is an adjustable frequency 250kHz to 2.2MHz monolithic buck switching regulator that accepts input voltages up to 36V. A high efficiency 0.5Ω switch is included on the device along with a boost diode and the


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    PDF LT3682 250kHz QFN24 TSSOP16E LT3684 850mA, DFN10 MSOP10E LT3685 LT3682EDD datasheet LT3682EDD#PBF MARKING TRANSISTOR BD RC B150 LQH55D LT3682 eef 1208

    IR E78996

    Abstract: E78996 rectifier module E78996 Diode E78996 E78996 IR IRKH136-16D25 14D20 IR E78996 135 KL23014
    Text: International H ]Rectifier Power Modules Thyristor with high voltage diode Voltage Range lT A V @ T c i f (a v (1) (2) (3) (4) Diode •TSM' >FSM (5) R th JC DC ) (3) (4) Thyristor (V) (V) (A) (°C ) 50 H z (A) IRKH136-14D20 IRKH136-16D25 IRKL136-14D20


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    PDF IRKH136-14D20 IRKH136-16D25 IRKH142-14D20 IRKH142-16D25 IRKH142-18D28 IRKH142-20D32 IRKH162-14D20 IRKH162-16D25 170-14D20 IRKH170-16D25 IR E78996 E78996 rectifier module E78996 Diode E78996 E78996 IR 14D20 IR E78996 135 KL23014

    dsei 31-06c

    Abstract: No abstract text available
    Text: Fast Recovery Epitaxial Diode FRED Type 440 640 400 600 Symbol LT— I <H-H- 1-0 DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C Test Conditions DSEI 2x 30 DSEI 2x 31 Maximum Ratings (per diode) ^FRM TVJ T\um Tc = 85°C; rectangular, d = 0.5


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    PDF 30-04C 31-04C 30-06C 31-06C OT-227 E72873 dsei 31-06c

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 127101 rev. B 04/98 International IO R Rectifier IRK. SERIES THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 1 3 5 A • H ig h v o lt a g e I E le c t r ic a lly is o la te d b a s e p la te ■ 3 0 0 0 V RMS is o la tin g v o lt a g e


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    PDF

    marking m12 sot23

    Abstract: M098 M05 SOT-23 SOT-23 marking code BS
    Text: SM05 is D ^ J lT H C ^ K ] 300 Watt Surface Mount TVS Diode SM36 TEL: 805-498-2111 DESCRIPTION FEATURES: The SM series of transient voltage suppressors are designed to protect components which are connected to data and transmission lines from over voltages caused


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    PDF OT-23 00041A4 marking m12 sot23 M098 M05 SOT-23 SOT-23 marking code BS

    LT 8233

    Abstract: diode LT 8233 4CM6 U891 L486 D029 U615
    Text: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS


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    PDF 00001t3 9305-F-078 lead-171 LT 8233 diode LT 8233 4CM6 U891 L486 D029 U615

    Untitled

    Abstract: No abstract text available
    Text: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS


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    PDF 00Q01t 9305-F-078 DO-35 DO-41 DO-15 DO-201AD

    BZY95C12

    Abstract: in152 BZY95-C12 BZY95-C51 BZY95C22 BZY96C5V1 BZY96C6V2 BZY96-C6V8 BZY95-C24 BZY95C24
    Text: SEMITRON INDUSTRIES LT» 43E D • &137 &&^ OOOOISI O B S L C B BZY9S/BZY96/Z2 SERIES Hermetically Sealed Metal Package ■Voltage Regulator Diode Released to BS/CECC 9305-F082 ■Voltage Range 3.0 to 400 Volts 1.5 Watt Steady State ■400 Watt Peak Power


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    PDF BZY9S/BZY96/Z2 9305-F082 9305-F-082 DO-35 DO-35 DO-41 DO-15 DO-201AD BZY95C12 in152 BZY95-C12 BZY95-C51 BZY95C22 BZY96C5V1 BZY96C6V2 BZY96-C6V8 BZY95-C24 BZY95C24

    D0201AD

    Abstract: No abstract text available
    Text: ¡LITE-ON INC ra ijj L 31E D 5531^7 0ÜG1ÔS4 *4 I LT N GaAs T-13/4 MODIFIED 1 ' LEA 50 INFRARED EMITTING DIODE LT E-2871/2871C FEATU RES • S E L E C T E D TO S P E C IF IC O N -L IN E IN T E N S IT Y A N D R A D IA N T IN T E N S IT Y . • LOW COST. • N A R R O W B EA M .


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    PDF S53b3k T-13/4 LTE-2871/2871C LTE-2871 D0-41and D0-41L 201AD 553b3b7 D0201AD

    MB11A02

    Abstract: cd7212 Thyristor Modules CD771 thyristor tt 142 n 12 powerex ME30 powerex ME20 powerex ME10 thyristor tt 18 n 800 thyristor TT 18 N 1200
    Text: 7294621 POWE RE X INC TI DE | TaTMbai ODDlflET 5 2,_? Thyristor and Diode Modules GTO Thyristor Modules ITGQ lT AV Tc (Am ps) (Amps) (°C) Vdrm (Volts) (Volts) tq fosee) (Volts) d i/d t (A/fjsec) (mA) 100 20 60 1200 15 8.0 1.5 200 400 GDM1/GDM2 GDM1/GDM21210


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    PDF GDM1/GDM21210 GDM1/GDM21220 GDM-1210 GDM-1220 MAX/10 MB11A02 cd7212 Thyristor Modules CD771 thyristor tt 142 n 12 powerex ME30 powerex ME20 powerex ME10 thyristor tt 18 n 800 thyristor TT 18 N 1200

    Diode LT 410

    Abstract: No abstract text available
    Text: F = 7 SCS -THOMSON * 7 i» MDS35 M 3 © iL iC T [i» g S DIODE /THYRISTORMODULE FEATURES • V d rm = V rrm UP T 0 1200 V ■ lT(AV = 25 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE: INSULATING VOLTAGE 2500 V(rmS) DESCRIPTION The MDS35 family are constitued of one rectifier


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    PDF MDS35 MDS35 Diode LT 410

    IN4620

    Abstract: IN4105 1N4F Diode 1N41 IN411 1N4019 1N4099 1N4135 1N461 1N4614
    Text: Micro/semi Corp. ? The diode experts SCOTTSDALE, AZ F o r m o re in fo r m a tio n call: 602 941-6300 1N4099 thru 1N4135 and 1N4614 thru 1N4627 DO-7 FEATURES • SILICON 400 mW LOW NOISE ZENER DIODES ZENER V O LT A G E 1.8V to 100V • ALL HAVE JAN, JANTX and JANTXV


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    PDF 1N4099 1N4135 1N4614 1N4627 MIL-S-19500/435 66mW/Â 1N4099-1N4135 1N4614-1N4627 IN4620 IN4105 1N4F Diode 1N41 IN411 1N4019 1N461

    IN4745

    Abstract: in4749 in4728
    Text: 7" - / / - / 3 LI TE-ON INC CHE D | S 5 3 b 3 b 7 0 0 0 1 4 7 3 3 | IN4728 THRU IN 4764 1 WATT PLASTIC ZENER DIODE V O LT A G E RANGE 3.3 to 100 Volts POWER RATING 1.0 Watts =m = FEA TU RES: DO-41 • • • • Low cost Low zener impedance Excellent clamping


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    PDF IN4728 DO-41 DO-41, IL-STD-202 IN4764 IN4745 in4749

    Untitled

    Abstract: No abstract text available
    Text: M U R I 0005CT R DACO SEMICONDUCTOR CO., LTD. THRU M U R I 0060CT(R) SUPER FAST DIODE MODULE TYPES 100A Features High Surge Capability 1 0 0 A m p R e c t if ie r Types Up to 60 0V Vrrm 5 0 - 6 0 0 V o lt s TWIN TOWER 4- A R Maximum Ratings Maximum RMS Voltage


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    PDF 0005CT 0060CT 0040CT

    Untitled

    Abstract: No abstract text available
    Text: TAIWAN LI TO N E L E C T R O N I C E4E D Ö S 3 S S 47 0 0 0 0 1 2 b T • GaAs T-1% MODIFIED 1 LEAD 5<£ INFRARED EMITTING DIODE " SPECIALIST LT E»2871/2871C FEATURES •SELECTED TO SPECIFIC ON-LINE INTENSITY AND R AD IAN T INTENSITY. • LOW COST. • NARROW BEAM.


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    PDF 3S547 LTE-2871/2871C LTE-2871 Temperature-25Â

    MRD500

    Abstract: motorola MRD500 MRD510 laser diode RW
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRD500 MRD510 P h o to D e te c to rs Diode Output PHOTO D E T E C T O R S DIODE O U TP U T PIN SILICO N 250 M ILLIW ATTS 100 V O LT S . . . d e sig n e d fo r a p p lic a tio n in laser d e te ctio n , lig h t d e m o d u la tio n , d e te ctio n o f v is ib le


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    PDF MRD500 MRD510 RD500) MRD510) MRD500 motorola MRD500 MRD510 laser diode RW

    LT 5247

    Abstract: 5253-1N LT 5247 H LT 5224 diode LT 5245 IN5242 IC 5276 in5250 LT 5249 LT 5252
    Text: Mierosemi Corp. f The diode experts SCOTTSDALE, A Z 1N 5221 thru 1N 5281 DO-35 F o r more inform ation call: 602 941-6300 FEATURES SILICO N • 2.4 TH R U 200 V O LTS 500 mW • C O M PAC T PAC K A G E ZEN ER D IO D E S • C O N S U LT FA C T O R Y FOR V O LTAG ES AB O V E 200 V


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    PDF DO-35 1N5221A, 1N5242A, 1N5243A, 1N5281A, 1N5221 1N5281 LT 5247 5253-1N LT 5247 H LT 5224 diode LT 5245 IN5242 IC 5276 in5250 LT 5249 LT 5252

    in4742a

    Abstract: IN4728A IN4759A 1N4134A 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A
    Text: 1N4728A thru 1N 4764A DO-41 G LASS Micro/semi Corp. ' The diode expens SCOTTSDALE, AZ F o r m o re in fo rm a tio n call: 602 941-6300 SILICO N 1 WATT ZEN ER D IO D E S FEATURES • 3.3 TH R U 100 V OLTS • H ER M ETIC G LA S S PAC KAGE • C O N S U LT FA C TO R Y FOR V O LTA G ES O VER 100 V


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    PDF

    LTE2871

    Abstract: D0-201AD LTE-2871
    Text: ¡LITE-ON INC L r a ijj 31E D 5531^7 0ÜG1ÔS4 *4 ILTN GaAs T-13/4 MODIFIED 1 ' LEA 50 INFRARED EMITTING DIODE LT E-2871/2871C FEATU RES • S E L E C T E D TO S P E C IF IC O N -L IN E IN T E N S IT Y A N D R A D IA N T IN T E N S IT Y . • LOW COST. • N A R R O W B EA M .


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    PDF T-13/4 LTE-2871/2871C LTE-2871 553b3b7 D0201AD LTE2871 D0-201AD

    MRD510

    Abstract: MRD500 motorola MRD500 photo detectors convex lens 250 mw ultra stable diode
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MRD500 MRD510 P h o to D e te c to rs Diode Output PHOTO D E T E C T O R S DIO DE O U TP U T PIN SILICO N 250 M ILLIW A TTS 100 V O LT S . . . d e sig n e d fo r a p p lic a tio n in laser d e te c tio n , lig h t d e m o d u la tio n , d e te c tio n o f v is ib le


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    PDF MRD500 MRD510 MRD500) MRD510) MRD510 MRD500 motorola MRD500 photo detectors convex lens 250 mw ultra stable diode