LT-44
Abstract: IC STR Diode LT 02 KE LT-35 LT-59 Diode LT 44 LT-52 diode LT 42 LT/SG3527A LT-38
Text: DIODE LIMITER SERIES LT 0.1-18 GHz GENERAL INFORMATION The LT ser ies high speed Diode Limiters receiver protectors are used at the input of sensiti v e receiv ers in order to protect them against accidental b urnout causedb y high levels of CW or pulsed op wer. Most mod els areb uilt i n “air free” solid dielectr ic str iplin e, and can there
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MIL-E-5400
LT-59
LT-62
LT-68
LT-76
LT-82
LT-83
LT-44
IC STR
Diode LT 02 KE
LT-35
LT-59
Diode LT 44
LT-52
diode LT 42
LT/SG3527A
LT-38
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4321F
Abstract: TG12 LT432
Text: LT4321 PoE Ideal Diode Bridge Controller Features Description n n n The LT 4321 is a dual ideal diode bridge controller that enables a Power over Ethernet PoE powered device (PD) to receive power in either voltage polarity from RJ-45 data pairs, spare pairs, or both. The LT4321 and
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LT4321
RJ-45
LT4321
LTC4355
LTC4359
LTC4290/LTC4271
4321f
com/LT4321
4321F
TG12
LT432
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749022016
Abstract: 749022017 SMBJ58A
Text: DEMO MANUAL DC2093A LT4275/LT4321 LTPoE+/IEEE 802.3at/ IEEE 802.3af Compliant Powered Device Interface Description Demonstration circuit 2093A features the LT 4275, a fourth generation powered device PD controller and the LT4321, an ideal diode bridge controller for Power over
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DC2093A
LT4275/LT4321
LT4321,
DC2093A
DC2093A-A,
DC2093A-B,
DC2093A-C
DC2093A-A
LT4275A
dc2093af
749022016
749022017
SMBJ58A
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12v to 3.7v converter data sheet 2a
Abstract: ltc 3681 DE14MA 0.47mf 5.5v nec 24v active clamp forward converter 3.7v 1500mA battery Schottky diode low voltage g14 DIODE schottky marking ida sot-23 MARKING TRANSISTOR BD RC
Text: LT3681 36V, 2A, 2.8MHz Step-Down Switching Regulator with Integrated Power Schottky Diode U FEATURES DESCRIPTIO • The LT 3681 is an adjustable frequency 300kHz to 2.8MHz monolithic buck switching regulator that accepts input voltages up to 34V (36V maximum). A high efficiency
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LT3681
300kHz
LT3681
QFN-24
TSSOP16E
LT3684
850mA,
DFN-10
MSOP10E
LT3685
12v to 3.7v converter data sheet 2a
ltc 3681
DE14MA
0.47mf 5.5v nec
24v active clamp forward converter
3.7v 1500mA battery
Schottky diode low voltage
g14 DIODE schottky marking
ida sot-23
MARKING TRANSISTOR BD RC
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lemc3225
Abstract: murata lqh32cn470k GMK212 LMK107 LT3464 LT3464ETS8 LEMC3225-100 c3464 8D26 LEMC3225-68
Text: Final Electrical Specifications LT3464 Micropower Boost Converter with Integrated Schottky and Output Disconnect in ThinSOT U • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 3464 is a micropower step-up DC/DC converter with integrated Schottky diode and output disconnect
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LT3464
40mm2.
LT3464
115mA
LTC3400/
LTC3400B
600mA
LTC3401
LTC3402
3464i
lemc3225
murata lqh32cn470k
GMK212
LMK107
LT3464ETS8
LEMC3225-100
c3464
8D26
LEMC3225-68
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a boost dc to ac inverter
Abstract: LT1930 sharp oled display LQH32CN100K53 LQH32CN150K53 LT3494 LT3494EDDB dc ac inverter circuit
Text: LT3494/LT3494A Micropower Low Noise Boost Converters with Output Disconnect FEATURES DESCRIPTION • The LT 3494/LT3494A are low noise boost converters with integrated power switch, Schottky diode and output disconnect circuitry. The parts use a novel* control technique resulting in low output voltage ripple as well as high
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LT3494/LT3494A
3494/LT3494A
350mA
180mA
LT3494A
LT3494
LT3463/LT3463A
250mA
LT3471
3494fb
a boost dc to ac inverter
LT1930
sharp oled display
LQH32CN100K53
LQH32CN150K53
LT3494EDDB
dc ac inverter circuit
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PDF
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diode lt 205
Abstract: CMLM0205 CMLM0705 CMLM2205 diode marking 53
Text: Central CMLM2205 M U LT I D I S C R E T E M O D U L E SURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE TM SOT-563 CASE TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMLM0205 is a Multi Discrete Module ™ consisting of a single NPN
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CMLM2205
OT-563
CMLM0205
CMLM0705
150mA,
diode lt 205
CMLM0705
CMLM2205
diode marking 53
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PDF
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DIODE 1N54
Abstract: 1N60 germanium diode 1N34 1N542 1N48 diode 1N38A diode 1N69a 1n81a 1N75 1N68
Text: GERMANIUM DIODE TYPE PEAK REV ERSE V O LTA G E AVERA G E FO RW ARD CU RREN T MINIMUM FO R W A R D CU RREN T A T 1 V O LT M AXIM UM REV ERSE CU RREN T A T 25°C V O LT S mA mA pA 1N34 75 50 5 50 a t -10V 1N34A 75 50 5 30 a t -10V 1N35 75 22.5 7 10 at -10V 1N36
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1N34A
1N38A
1N38B
1N52A
1N54A
1N57A
1N58A
1N60A
1N63A
-100V
DIODE 1N54
1N60 germanium diode
1N34
1N542
1N48 diode
diode 1N69a
1n81a
1N75
1N68
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Untitled
Abstract: No abstract text available
Text: Bulletin 127101 rev. B 04/98 International IO R Rectifier IRK. SERIES THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 1 3 5 A • H ig h v o lt a g e I E le c t r ic a lly is o la te d b a s e p la te ■ 3 0 0 0 V RMS is o la tin g v o lt a g e
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UHVP
Abstract: UC1625 application
Text: PRIORITY Lt t UIMITROOE UC1625 UC2625 UC3625 Brushless DC Motor Controller FEATURES DESCRIPTION Drives Power MOSFETs or Power Darlingtons Directly 50V Open Collector High-Side Drivers Latched Soft Start High-speed Current-Sense Amplifier with Ideal Diode The UC1625 and UC3625 motor controller ICs integrate most of
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UC1625
UC2625
UC3625
UC3625
140ns
UHVP
UC1625 application
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PDF
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1N295
Abstract: 1N294 1N90 ln297 1N135 1n69 1N75 1N128 in67a 1N67
Text: CRIMSON SEM IC ONDUC TO R INC Ti 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 0 0 3 5 0 D DE | S S m D ^ b T'Ot'Ol GERMANIUM DIODE TYPE PE A K REVERSE V O LT A G E AVERAGE FO RW AR D CURRENT V O LTS mA M INIMUM FO RW ARD CURRENT A T 1 V O LT
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1N66A
at-10V
-100V
1N68A
at-100V
1N70A
1N81A
1N87A
1N295
1N294
1N90
ln297
1N135
1n69
1N75
1N128
in67a
1N67
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PDF
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Untitled
Abstract: No abstract text available
Text: DIXYS Thyristor Modules Thyristor/Diode Modules MCC 132 iTRUS = 2 x 300 A MCD132 lT,VM = 2 x 130A V =800-1800 V TAVM rrm V RSM V FIRM Type V DSM V DRM V V Version 1 Version 1 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC MCC MCC MCC MCC MCD MCD MCD MCD
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MCD132
132-08io1
132-12io1
132-14io1
132-16io1
132-18io1
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Diode LT 410
Abstract: No abstract text available
Text: F = 7 SCS -THOMSON * 7 i» MDS35 M 3 © iL iC T [i» g S DIODE /THYRISTORMODULE FEATURES • V d rm = V rrm UP T 0 1200 V ■ lT(AV = 25 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE: INSULATING VOLTAGE 2500 V(rmS) DESCRIPTION The MDS35 family are constitued of one rectifier
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MDS35
MDS35
Diode LT 410
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PDF
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92C605
Abstract: RADIOTRON triode rca company Scans-0017338
Text: DIODE-TRIODE-POWER AMPLIFIER PENTODE F i 1 ament C o a te d 1 .4 d -c v o lt s V o lt a g e amp. 0.1 C u rre n t Maxim um O v e r a l 1 L e n g t h 3 -5 / 1 6 " 2 -3 / 4 " Maxim um S e a t e d H e ig h t Maxim um D ia m e t e r 1 -5 / 1 6 " B u lb T -9 S k irte d M in ia t u r e - S t y l e C
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92C-6058
92C-6059
92C605
RADIOTRON
triode
rca company
Scans-0017338
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PDF
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6j7g
Abstract: Triode brimar Scans-0017686
Text: li H Replacement Type 11 TYPE 75 111 U.X. BASE DOUBLE DIODE TRIODE h C H A R A C T E R IS T IC S H e a te r V o lta g e 6.3 v o lts G r id V o lt a g e H e a te r C u r r e n t 0.3 am p. A n o d e im ped ance 91,000 o h m s A n o d e V o lta g e 2 50 v o lts
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PDF
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Untitled
Abstract: No abstract text available
Text: Li IXYS Half Controlled VHF36 Single Phase Rectifier Bridges with freewheeling Diode Type DSti V 8 1 3 2 op o p V 800 1200 1400 1600 Test Conditions •dAV» ^FRHS> ^TRM S Tk = 85‘ C, module module per leg ^FSU> ^TSH Tvj dl/dt „ (dv/dt)w 45-C; > GC
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VHF36
36-12io5
36-16io5
00031Q7
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PDF
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Untitled
Abstract: No abstract text available
Text: DIXYS Thyristor Modules Thyristor/Diode Modules MCC 170 ITRMS TAVM v RRM V RSM V RRM v DSM V DRM V V 1300 1500 1700 1900 1200 1400 1600 1800 MCC MCC MCC MCC 170-12io1 170-14io1 170-16io1 170-18io1 ^TRMS ^TAVM Tc = 85°C; 180° sine ^TSM> ^FSM TVJ = 45°C;
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170-12io1
170-14io1
170-16io1
170-18io1
00D3212
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PDF
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Untitled
Abstract: No abstract text available
Text: « Three-Phase Half Controlled Rectifier Bridges v nsu v DSM v*RRM v DRU V V 1300 1500 1700 1200 1400 1600 Symbol Test Conditions ^dAVM ^FRUS> ^TRMS T k = 100°C; module module per leg *FSM» ^TBM TVJ = 45°C; dv/dt w Ì-W fifll VVZ 24-12101 VVZ 24-14101
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24-16io1
VVZ24
4bflb22b
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PDF
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diode lt 246
Abstract: No abstract text available
Text: □IXYS Thyristor Modules Thyristor/Diode Modules MCC 225 ITRMS = 2 x 400 A •t a v m V v RRM V RSM VRRM V DSM VDRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol Test Conditions ^TRMS ^TAVM TVJ ~ Tc = 85°C; 180° sine N'SM» ^FSM TVJ = 45°C; VR= 0
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225-12io1
225-14io1
225-16io1
225-18io1
4bflh22b
DDD3222
diode lt 246
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PDF
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Untitled
Abstract: No abstract text available
Text: Û13bb71 0 D0 L S3 Û _ 4 24 SKiiP 362 GDL 060 - 453 WT 12 Absolute Maximum Ratings Symbol | Conditions Values Units 600 400 300 600 - 4 0 . + 150 2500 300 600 2160 23,4 V V A A °C V A A A kA2s 18 30 75 V V kV/ is °C 1) IGBT & Inve rse Diode V ces Operating DC link voltage
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13bb71
3bb71
362GD060
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PDF
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IRFP450
Abstract: IRFP452 irfp450 samsung IRFP451 IRFP453 IRFP250 IRFP251 IRFP252 IRFP253 tr irfp450
Text: [ 7964142 ÏF lT T tm M a INC SAMSUNG S E M I C ONDUCTOR 00[]52HLt 3 98 D 0 5 2 2 4 I D T ~ 3 ñ -13 N-CHANNEL POWER MOSFETS IRFP450/451/452/453 FEATURES Low RDS on at high voltage Improved inductive ruggedness Excellent high voltage stability Fast switching times
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cib414S
IRFP450/451Z452/453
IRFP250
IRFP251
IRFP252
IRFP253
IRFP450
IRFP451
IRFP452
IRFP453
irfp450 samsung
tr irfp450
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PDF
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7 SEGMENT DISPLAY 4511
Abstract: No abstract text available
Text: rZ Z Ä T# SGS T H O M S O N [» « L IO T to M Ü S M 54H C 4511 • M 74H C 4511 BCD TO 7 SEGMENT LATCH/DECODER DRIVER HIGH SPEED tpD = 28 ns TYP. AT Vcc = 5 V LOW POWER DISSIPATION lee = 4 nA (MAX.) AT Ta = 25 "C HIGH NOISE IMMUNITY Vnih = Vnil = 28 % Vcc (MIN.)
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10LSTTL
4511B
M54HC4011F1R
M74HC4011M1R
M74HC4011B1R
M74HC4011C1R
M54/74HC4511
QQ5530Ã
7 SEGMENT DISPLAY 4511
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PDF
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IC 4511B pin
Abstract: 7 SEGMENT LETTER DISPLAY COMMON CATHODE tlr332 TLR-332 TC74HC4511P
Text: TC74HC4511P/F TC74HC4511P/F BCD-TO-7 SEGMENT LATCH/DECODER/DRIVER The TC74HC4511 is a high speed CMOS BCD-TO-7 SEGMENT LATCH/DECODER/DRIVER fablicated with silicon gate C2MOS technology. It enables high speed latch and decode operation with identical pin connection and function to standard CMOS 4511B.
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TC74HC4511P/F
TC74HC4511P/F
TC74HC4511
4511B.
TLR358
TLR362
TLR332
TLR342
IC 4511B pin
7 SEGMENT LETTER DISPLAY COMMON CATHODE
TLR-332
TC74HC4511P
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PDF
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Untitled
Abstract: No abstract text available
Text: R O P E R A TIO N A L A M P LIFIE R S FEATURES • HIGH VOLTAGE — 450V ±225V • HIGH SLEW RATE — IOOOV/.llS • HIGH OUTPUT CURRENT — 200mA APPLICATIONS • • • • HIGH VOLTAGE INSTRUMENTATION PIEZO TRANSDUCER EXCITATION PROGRAMMABLE POWER SUPPLIES UP TO 430V
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200mA
200mA.
PA85U
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