Step-up 12V to 36V 300mA
Abstract: LT3473 LT3473A LT3473AEDE LT3473EDD LTC3473A ltc3436 3473
Text: LT3473/LT3473A Micropower 1A Boost Converter with Schottky and Output Disconnect U FEATURES DESCRIPTIO • The LT 3473/LT3473A are micropower step-up DC/DC converters with integrated Schottky diode and output disconnect circuitry in low profile DFN packages. The
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LT3473/LT3473A
3473/LT3473A
50mm2.
LT3471
LT3479
TSSOP-16E
3473f
Step-up 12V to 36V 300mA
LT3473
LT3473A
LT3473AEDE
LT3473EDD
LTC3473A
ltc3436
3473
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ltg2
Abstract: LT3464ETS8
Text: LT3464 Micropower Boost Converter with Schottky and Output Disconnect in ThinSOT U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 3464 is a micropower step-up DC/DC converter with integrated Schottky diode and output disconnect
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LT3464
115mA,
OT-23
3464f
LMK107
BJ105MA-T
GMK212
BJ334MG-T
BJ224MG-T
ltg2
LT3464ETS8
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ltg2
Abstract: LQH32CN470K LEMC3225 LT3464ETS8 BJ105MA-T murata lqh32cn470k ELJPA470KF LQH32CN220K53 LQH32CN470K53 LQH32CN680K53
Text: LT3464 Micropower Boost Converter with Schottky and Output Disconnect in ThinSOT U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 3464 is a micropower step-up DC/DC converter with integrated Schottky diode and output disconnect
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LT3464
OT-23.
40mm2.
LT3464
115mA
LTC3400/
LTC3400B
600mA
LTC3401
LTC3402
ltg2
LQH32CN470K
LEMC3225
LT3464ETS8
BJ105MA-T
murata lqh32cn470k
ELJPA470KF
LQH32CN220K53
LQH32CN470K53
LQH32CN680K53
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lemc3225
Abstract: murata lqh32cn470k GMK212 LMK107 LT3464 LT3464ETS8 LEMC3225-100 c3464 8D26 LEMC3225-68
Text: Final Electrical Specifications LT3464 Micropower Boost Converter with Integrated Schottky and Output Disconnect in ThinSOT U • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 3464 is a micropower step-up DC/DC converter with integrated Schottky diode and output disconnect
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LT3464
40mm2.
LT3464
115mA
LTC3400/
LTC3400B
600mA
LTC3401
LTC3402
3464i
lemc3225
murata lqh32cn470k
GMK212
LMK107
LT3464ETS8
LEMC3225-100
c3464
8D26
LEMC3225-68
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a boost dc to ac inverter
Abstract: LT1930 sharp oled display LQH32CN100K53 LQH32CN150K53 LT3494 LT3494EDDB dc ac inverter circuit
Text: LT3494/LT3494A Micropower Low Noise Boost Converters with Output Disconnect FEATURES DESCRIPTION • The LT 3494/LT3494A are low noise boost converters with integrated power switch, Schottky diode and output disconnect circuitry. The parts use a novel* control technique resulting in low output voltage ripple as well as high
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LT3494/LT3494A
3494/LT3494A
350mA
180mA
LT3494A
LT3494
LT3463/LT3463A
250mA
LT3471
3494fb
a boost dc to ac inverter
LT1930
sharp oled display
LQH32CN100K53
LQH32CN150K53
LT3494EDDB
dc ac inverter circuit
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LT3494EDDB
Abstract: LQH32CN100K53 LQH32CN150K53 LT3494 CDHED13 f06c g0105
Text: LT3494/LT3494A Micropower Low Noise Boost Converters with Output Disconnect FEATURES DESCRIPTION • The LT 3494/LT3494A are low noise boost converters with integrated power switch, Schottky diode and output disconnect circuitry. The parts use a novel* control technique resulting in low output voltage ripple as well as high
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LT3494/LT3494A
3494/LT3494A
350mA
180mA
LT3494A
LT3494
LT3463/LT3463A
250mA
LT3471
3494fa
LT3494EDDB
LQH32CN100K53
LQH32CN150K53
CDHED13
f06c
g0105
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD BAV99 DIODE H I GH CON DU CT AN CE U LT RA FAST DI ODE ̈ EQU I V ALEN T For 3 Pin Package For 6 Pin Package ̈ ORDERI N G I N FORM AT I ON Ordering Number Lead Free Halogen Free BAV99L-AE3-R BAV99G-AE3-R BAV99L-AL3-R BAV99G-AL3-R
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BAV99
BAV99L-AE3-R
BAV99G-AE3-R
BAV99L-AL3-R
BAV99G-AL3-R
BAV99L-AN3-R
BAV99G-AN3-R
BAV99L-AL6-R
BAV99G-AL6-R
OT-23
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IR E78996
Abstract: E78996 rectifier module E78996 Diode E78996 E78996 IR IRKH136-16D25 14D20 IR E78996 135 KL23014
Text: International H ]Rectifier Power Modules Thyristor with high voltage diode Voltage Range lT A V @ T c i f (a v (1) (2) (3) (4) Diode •TSM' >FSM (5) R th JC DC ) (3) (4) Thyristor (V) (V) (A) (°C ) 50 H z (A) IRKH136-14D20 IRKH136-16D25 IRKL136-14D20
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IRKH136-14D20
IRKH136-16D25
IRKH142-14D20
IRKH142-16D25
IRKH142-18D28
IRKH142-20D32
IRKH162-14D20
IRKH162-16D25
170-14D20
IRKH170-16D25
IR E78996
E78996 rectifier module
E78996 Diode
E78996
E78996 IR
14D20
IR E78996 135
KL23014
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dsei 31-06c
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED Type 440 640 400 600 Symbol LT— I <H-H- 1-0 DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C Test Conditions DSEI 2x 30 DSEI 2x 31 Maximum Ratings (per diode) ^FRM TVJ T\um Tc = 85°C; rectangular, d = 0.5
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30-04C
31-04C
30-06C
31-06C
OT-227
E72873
dsei 31-06c
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DD100HB160
Abstract: 1S43 DF30CA DF60A df30aa
Text: S A NS HA ELECTRIC MF 6 CO T> 37E 7 cm S 4 3 ÖOOOOOb 1 E lT s E M J DIODE . T'Z3-0? ISOLATED TYPE 3 PHASE DIODE MODULE TYPE DF20AA DF20BA DF20CA DF20DB DF30AA DF30BA DF30CA DF30DB DF40AA V A *C 1200-1600 400— 800 800— 1600 400—800 1200-1600 400—800
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DF20AA
DF20BA
DF20CA
DF20DB
DF30AA
DF30BA
DF30CA
DF30DB
DG20AA
SDF2000B
DD100HB160
1S43
DF60A
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Untitled
Abstract: No abstract text available
Text: Bulletin 127101 rev. B 04/98 International IO R Rectifier IRK. SERIES THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 1 3 5 A • H ig h v o lt a g e I E le c t r ic a lly is o la te d b a s e p la te ■ 3 0 0 0 V RMS is o la tin g v o lt a g e
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LT 8233
Abstract: diode LT 8233 4CM6 U891 L486 D029 U615
Text: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS
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00001t3
9305-F-078
lead-171
LT 8233
diode LT 8233
4CM6
U891
L486
D029
U615
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Untitled
Abstract: No abstract text available
Text: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS
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00Q01t
9305-F-078
DO-35
DO-41
DO-15
DO-201AD
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22B27
Abstract: BZY95-C39 BZY95C18 BZY96-C6V8 BZY96 BZY95C10 BZY96C5V1 IN1765 BZY95-C10 BZY96-C5V1
Text: SEMITRON INDUSTRIES LT» 43E D • & 137 &&^ BZY9S/BZY96/Z2 OOOOISI O B S L C B SERIES Hermetically Sealed Metal Package ■Voltage Regulator Diode Released to BS/CECC 9305-F082 ■Voltage Range 3.0 to 400 Volts 1.5 Watt Steady State ■400 Watt Peak Power
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BZY9S/BZY96/Z2
9305-F082
9305-F-082
Z2B130
Z2B150
Z2B200
Z2B400
22B27
BZY95-C39
BZY95C18
BZY96-C6V8
BZY96
BZY95C10
BZY96C5V1
IN1765
BZY95-C10
BZY96-C5V1
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D0201AD
Abstract: No abstract text available
Text: ¡LITE-ON INC ra ijj L 31E D 5531^7 0ÜG1ÔS4 *4 I LT N GaAs T-13/4 MODIFIED 1 ' LEA 50 INFRARED EMITTING DIODE LT E-2871/2871C FEATU RES • S E L E C T E D TO S P E C IF IC O N -L IN E IN T E N S IT Y A N D R A D IA N T IN T E N S IT Y . • LOW COST. • N A R R O W B EA M .
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S53b3k
T-13/4
LTE-2871/2871C
LTE-2871
D0-41and
D0-41L
201AD
553b3b7
D0201AD
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JU003
Abstract: No abstract text available
Text: ETK81-O5O 50a S ± / < 7 — POWER TRANSISTOR MODULE I f ô ii : : Features ij ' s r y i * - K r t s * 7 'j- s iw High DC Current Gain • hFE*', S ' . ' • ífe ltífí Including Free Wheeling Diode Insulated Type : Applications • • AC AC M otor Controls
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ETK81-O5O
Ic680
JU003
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transistor bel 100
Abstract: transistor f151 B-429 30S3 F151 M606 transistor BC 2500
Text: 6DI5OZ-12O 50a ‘ Outline Drawings POWER TRANSISTOR MODULE I 12 0 13 « I : F e a tu re s • S lt / E High Voltage • 7U— Krtilc • A S O ^ Ja I ' Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type • A p p lic a tio n s 31
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6DI5OZ-12O
eST05835%
195t/R89)
transistor bel 100
transistor f151
B-429
30S3
F151
M606
transistor BC 2500
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diode lt 205
Abstract: thyristor 12V 1A
Text: /S T SCS-THOMSON ö^O !MSi(gir^(QM(g§ MDS35 DIODE / THYRISTOR MODULE PRELIMINARY DATASHEET FEATURES • V d r m = V r r m UP TO 1200 V ■ lT(AV = 25 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE : INSULATING VOLTAGE 2500 V{RMS) DESCRIPTIO N The MDS35 family are consist of one rectifier
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MDS35
MDS35
380ns
diode lt 205
thyristor 12V 1A
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92C605
Abstract: RADIOTRON triode rca company Scans-0017338
Text: DIODE-TRIODE-POWER AMPLIFIER PENTODE F i 1 ament C o a te d 1 .4 d -c v o lt s V o lt a g e amp. 0.1 C u rre n t Maxim um O v e r a l 1 L e n g t h 3 -5 / 1 6 " 2 -3 / 4 " Maxim um S e a t e d H e ig h t Maxim um D ia m e t e r 1 -5 / 1 6 " B u lb T -9 S k irte d M in ia t u r e - S t y l e C
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92C-6058
92C-6059
92C605
RADIOTRON
triode
rca company
Scans-0017338
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Untitled
Abstract: No abstract text available
Text: rrunm TECHNOLOGY LT1572 100kHz, 1.25A Sw itching R eg ulato r w ith C a tc h D iode F€fflUR€S DCSCRIPTIOn • ■ ■ ■ ■ ■ ■ ■ ■ The LT 1572 is a 1.25A 100kHz monolithic switching regulator with on-board switch and catch diode included in one package. It combines an LT1172 with a 1A Schottky
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LT1572
100kHz,
100kHz
LT1172
LT1572
BCP56
MPS65Q/561
CTX300-4
1572TAW
LT1172
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Untitled
Abstract: No abstract text available
Text: M U LT I C H IP B IP O L A R D IG IT A L IN T EG R A T E D CIRC UIT TD62M8600F 8CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M8600F is Multi Chip 1C incorporates 8 low saturation discrete transistors equipped Fly-wheeling Diode and Bias resistor. This 1C is suitable for a battery use motor drive and LEE
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TD62M8600F
TD62M8600F
10kfi
HSOP16
HSOP16-P-300
RN6006
-300mA
450mA,
RN6006)
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LT 5224 diode
Abstract: IN5222 IN5229 LT 5224 zener diode in 5229 b
Text: 1N5221 thru Microjsemi Corp. f The diode experts / SANTA ANA, CA / / SCOTTSDALE, AZ 1N5281 DO-35 F o r m ore in fo rm ation call: 6 0 2 9 4 I-6 3 0 0 SILIC O N 500 mW ZEN ER D IO D E S FEATU R ES • 2.4 THRU 200 V OLTS • COM PACT PAC KAGE • CO N SU LT FA C TO R Y FOR V OLTAGES ABO VE 200 V
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1N5221
1N5281
DO-35
1N5221
1N5242A,
1N5243A,
1N5281A,
LT 5224 diode
IN5222
IN5229
LT 5224
zener diode in 5229 b
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LT 5247
Abstract: 5253-1N LT 5247 H LT 5224 diode LT 5245 IN5242 IC 5276 in5250 LT 5249 LT 5252
Text: Mierosemi Corp. f The diode experts SCOTTSDALE, A Z 1N 5221 thru 1N 5281 DO-35 F o r more inform ation call: 602 941-6300 FEATURES SILICO N • 2.4 TH R U 200 V O LTS 500 mW • C O M PAC T PAC K A G E ZEN ER D IO D E S • C O N S U LT FA C T O R Y FOR V O LTAG ES AB O V E 200 V
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DO-35
1N5221A,
1N5242A,
1N5243A,
1N5281A,
1N5221
1N5281
LT 5247
5253-1N
LT 5247 H
LT 5224 diode
LT 5245
IN5242
IC 5276
in5250
LT 5249
LT 5252
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Untitled
Abstract: No abstract text available
Text: Te m ic BA604 TELEFUN KEN Sem iconductors Silicon Planar Diode Applications General purpose .- 4 l - Absolute Maximum Ratings Tj = 25 °C P a r a m e te r T e s t C o n d it io n s Type P e a k r e v e r s e v o lt a g e , n o n r e p e titiv e R e v e r s e v o lta g e
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BA604
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